Showing 1–2 of 2 results for author: Kapitanchuk, O L
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Polar self-organization of ferroelectric nematic liquid crystal molecules on atomically flat Au(111) surface
Authors:
Alexandr A. Marchenko,
Oleksiy L. Kapitanchuk,
Yaroslava Yu. Lopatina,
Kostiantyn G. Nazarenko,
Anton I. Senenko,
Nathalie Katsonis,
Vassili G. Nazarenko,
Oleg D. Lavrentovich
Abstract:
Understanding nanoscale mechanisms responsible for the recently discovered ferroelectric nematics can be helped by direct visualization of self-assembly of strongly polar molecules. Here we report on scanning tunneling microscopy (STM) studies of monomolecular layers of a ferroelectric nematic liquid crystal on a reconstructed Au(111) surface. The monolayers are obtained by deposition from a solut…
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Understanding nanoscale mechanisms responsible for the recently discovered ferroelectric nematics can be helped by direct visualization of self-assembly of strongly polar molecules. Here we report on scanning tunneling microscopy (STM) studies of monomolecular layers of a ferroelectric nematic liquid crystal on a reconstructed Au(111) surface. The monolayers are obtained by deposition from a solution at ambient conditions. The adsorbed ferroelectric nematic molecules self-assemble into regular rows with tilted orientation, resembling a layered structure of a smectic C. Remarkably, each molecular dipole in this architecture is oriented along the same direction giving rise to polar ferroelectric ordering.
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Submitted 18 January, 2024;
originally announced January 2024.
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Charge distribution in C$_{60}$ crystal doped by electric field
Authors:
V. A. Kuprievich,
O. L. Kapitanchuk,
O. V. Shramko
Abstract:
The calculations of the charge distribution in C$_{60}$-based FET structure are presented. A simple model is proposed to describe the distribution of the injected electrons or holes between two-dimensional layers. The calculations show that the relative charge distribution between the layers turns to be independent on the total amount of injected charges. The charge density is maximal on the sur…
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The calculations of the charge distribution in C$_{60}$-based FET structure are presented. A simple model is proposed to describe the distribution of the injected electrons or holes between two-dimensional layers. The calculations show that the relative charge distribution between the layers turns to be independent on the total amount of injected charges. The charge density is maximal on the surface layer and drops exponentially with the depth increase. The relative amounts of injected charge involved in the top layer are 73 and 64 per cent in the case of electron and hole injection, respectively. Thus, the charge localization on the crystal surface turns to be markedly different from near complete one that was obtained earlier within tight- binding model for the charge concentration providing superconductivity.
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Submitted 15 June, 2002;
originally announced June 2002.