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Exploration of stable atomic configurations in graphene-like BCN systems by Bayesian optimization
Authors:
Taichi Hara,
Akira Kusaba,
Yoshihiro Kangawa,
Tetsuji Kuboyama,
David Bowler,
Karol Kawka,
Pawel Kempisty
Abstract:
h-BCN is an intriguing material system where the bandgap varies considerably depending on the atomic configuration, even at a fixed composition. Exploring stable atomic configurations in this system is crucial for discussing the energetic formability and controllability of desirable configurations. In this study, this challenge is tackled by combining first-principles calculations with Bayesian op…
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h-BCN is an intriguing material system where the bandgap varies considerably depending on the atomic configuration, even at a fixed composition. Exploring stable atomic configurations in this system is crucial for discussing the energetic formability and controllability of desirable configurations. In this study, this challenge is tackled by combining first-principles calculations with Bayesian optimization. An encoding method that represents the configurations as vectors, while incorporating information about the local atomic environments and domain knowledge, is proposed for the search. The proposed encoding method proved effective in the search, resulting in the discovery of two interesting and stable semiconductor configurations. Furthermore, the optimization behavior is discussed through principal component analysis, confirming that the ordered BN network and the C configuration features are well embedded in the search space. While our approach provided a tailored encoding for the h-BCN system in this study, it holds promise for broader application to other materials by adapting the domain knowledge matrix to each target system.
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Submitted 21 May, 2025; v1 submitted 7 November, 2024;
originally announced November 2024.
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Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy
Authors:
Akira Kusaba,
Shugo Nitta,
Kenji Shiraishi,
Tetsuji Kuboyama,
Yoshihiro Kangawa
Abstract:
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor phase epitaxy system. Incorporating ab initio knowledge into the optimization successfully reproduces not only the concentration of CH$_4$ (an impurity precursor) as an objective variable but also known reaction pathway…
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To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor phase epitaxy system. Incorporating ab initio knowledge into the optimization successfully reproduces not only the concentration of CH$_4$ (an impurity precursor) as an objective variable but also known reaction pathways. The simulation results show significant production of GaH$_3$, a precursor of GaN, which has been difficult to detect in TOF-MS experiments. Our proposed approach is expected to be applicable to other applied physics fields that require quantitative prediction that goes beyond ab initio reaction rates.
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Submitted 21 October, 2022;
originally announced October 2022.
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Exploration of a new reconstructed structure on GaN(0001) surface by Bayesian optimization
Authors:
Akira Kusaba,
Yoshihiro Kangawa,
Tetsuji Kuboyama,
Atsushi Oshiyama
Abstract:
GaN(0001) surfaces with Ga- and H-adsorbates are fundamental stages for epitaxial growth of semiconductor thin films. We explore stable surface structures with nanometer scale by the density-functional calculations combined with Bayesian optimization, and succeed to reach a single structure with satisfactorily low mixing enthalpy among hundreds of thousand possible candidate structures. We find th…
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GaN(0001) surfaces with Ga- and H-adsorbates are fundamental stages for epitaxial growth of semiconductor thin films. We explore stable surface structures with nanometer scale by the density-functional calculations combined with Bayesian optimization, and succeed to reach a single structure with satisfactorily low mixing enthalpy among hundreds of thousand possible candidate structures. We find that the obtained structure is free from any postulated high symmetry previously introduced by human intuition, satisfies electron counting rule locally, and shows new adsorbate arrangement, reflecting characteristics of nitride semiconductors.
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Submitted 25 October, 2021;
originally announced October 2021.
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Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Authors:
Takashi Nakano,
Yosuke Harashima,
Kenta Chokawa,
Kenji Shiraishi,
Atsushi Oshiyama,
Yoshihiro Kangawa,
Shigeyoshi Usami,
Norihito Mayama,
Kazuya Toda,
Atsushi Tanaka,
Yoshio Honda,
Hiroshi Amano
Abstract:
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in…
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Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in the energy gap induced by the dislocations are elevated towards the conduction band as the Mg impurity approaches the dislocation line, indicating that the Mg-TSD complex is a donor. The formation of the Mg-TSD complex is unequivocally evidenced by our atom probe tomography in which Mg condensation and diffusion through [0001] screw dislocations is observed in p-n diodes. These findings provide a novel picture that the Mg being a p-type impurity in GaN diffuses toward the TSD and then locally forms an n-type region. The appearance of this region along the TSD results the reverse leakage current.
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Submitted 15 April, 2020;
originally announced April 2020.
