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Residual Connection-Enhanced ConvLSTM for Lithium Dendrite Growth Prediction
Authors:
Hosung Lee,
Byeongoh Hwang,
Dasan Kim,
Myungjoo Kang
Abstract:
The growth of lithium dendrites significantly impacts the performance and safety of rechargeable batteries, leading to short circuits and capacity degradation. This study proposes a Residual Connection-Enhanced ConvLSTM model to predict dendrite growth patterns with improved accuracy and computational efficiency. By integrating residual connections into ConvLSTM, the model mitigates the vanishing…
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The growth of lithium dendrites significantly impacts the performance and safety of rechargeable batteries, leading to short circuits and capacity degradation. This study proposes a Residual Connection-Enhanced ConvLSTM model to predict dendrite growth patterns with improved accuracy and computational efficiency. By integrating residual connections into ConvLSTM, the model mitigates the vanishing gradient problem, enhances feature retention across layers, and effectively captures both localized dendrite growth dynamics and macroscopic battery behavior. The dataset was generated using a phase-field model, simulating dendrite evolution under varying conditions. Experimental results show that the proposed model achieves up to 7% higher accuracy and significantly reduces mean squared error (MSE) compared to conventional ConvLSTM across different voltage conditions (0.1V, 0.3V, 0.5V). This highlights the effectiveness of residual connections in deep spatiotemporal networks for electrochemical system modeling. The proposed approach offers a robust tool for battery diagnostics, potentially aiding in real-time monitoring and optimization of lithium battery performance. Future research can extend this framework to other battery chemistries and integrate it with real-world experimental data for further validation
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Submitted 21 June, 2025;
originally announced June 2025.
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Time-domain decoding of unconventional charge order mechanisms in nonmagnetic and magnetic kagome metals
Authors:
Seongyong Lee,
Byungjune Lee,
Hoyoung Jang,
Xueliang Wu,
Jimin Kim,
Gyeongbo Kang,
Choongjae Won,
Hyeongi Choi,
Sang-Youn Park,
Kyle M. Shen,
Federico Cilento,
Aifeng Wang,
Jae-Hoon Park,
Mingu Kang
Abstract:
In kagome lattice materials, quantum interplay between charge, spin, orbital, and lattice degrees of freedom gives rise to a remarkably rich set of emergent phenomena, ranging from unconventional charge order and superconductivity to topological magnetism. While the exact nature of these exotic orders is often challenging to comprehend in static experiments, time-resolved techniques can offer crit…
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In kagome lattice materials, quantum interplay between charge, spin, orbital, and lattice degrees of freedom gives rise to a remarkably rich set of emergent phenomena, ranging from unconventional charge order and superconductivity to topological magnetism. While the exact nature of these exotic orders is often challenging to comprehend in static experiments, time-resolved techniques can offer critical insights by disentangling coupled degrees of freedom on the time-axis. In this work, we demonstrate that the nature of charge orders in two representative kagome metals - nonmagnetic ScV6Sn6 and magnetic FeGe - which has been highly controversial in static studies, can be directly deciphered in the time-domain through their fundamentally distinct order parameter dynamics measured via time-resolved X-ray scattering at an X-ray free electron laser. In nonmagnetic ScV6Sn6, the dynamics are characterized by ultrafast melting and coherent amplitudon oscillations, typical of a phonon-coupled charge order. In stark contrast, magnetic FeGe exhibits resilient metastable charge order dynamics, hitherto unobserved in any other charge-ordered system - this unique time-domain behavior directly signifies an unconventional magnetism-interlocked charge order state realized in this kagome magnet. Our results not only provide a model case where unconventional nature of electronic order, hidden in equilibrium, is directly unraveled in the time-domain, but also pave the way for future out-of-equilibrium engineering of novel quantum orders in kagome lattice platforms.
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Submitted 17 June, 2025;
originally announced June 2025.
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Orbital Pumping in Ferrimagnetic Insulators
Authors:
Hanchen Wang,
Min-Gu Kang,
Davit Petrosyan,
Shilei Ding,
Richard Schlitz,
Lauren J. Riddiford,
William Legrand,
Pietro Gambardella
Abstract:
We report the detection of pure orbital currents generated by both coherent and thermal magnons in the magnetic insulator Bi-doped yttrium iron garnet (BiYIG). The pumping of orbital and spin currents is jointly investigated in nano-devices made of naturally oxidized Cu, pure Cu, Pt, and Cr. The absence of charge conduction in BiYIG and the negligible spin-to-charge conversion of oxidized Cu allow…
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We report the detection of pure orbital currents generated by both coherent and thermal magnons in the magnetic insulator Bi-doped yttrium iron garnet (BiYIG). The pumping of orbital and spin currents is jointly investigated in nano-devices made of naturally oxidized Cu, pure Cu, Pt, and Cr. The absence of charge conduction in BiYIG and the negligible spin-to-charge conversion of oxidized Cu allows us to disambiguate the orbital current contribution. Comparative measurements on YIG and BiYIG show that the origin of the orbital pumping in BiYIG/oxidized Cu is the dynamics of the orbital magnetization in the magnetic insulator. In Cr, the pumping signal is dominated by the negative spin Hall effect rather than the positive orbital Hall effect, indicating that orbital currents represent a minority of the total angular momentum current pumped from the magnetic insulator. Our results also evidence that improving the interfacial transparency significantly enhances pumping efficiencies not only for spin, but also for orbital currents.
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Submitted 13 June, 2025;
originally announced June 2025.
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Phonon fluctuation diagnostics: Origin of charge order in AV$_3$Sb$_5$ kagome metals
Authors:
Stefan Enzner,
Jan Berges,
Arne Schobert,
Dongjin Oh,
Mingu Kang,
Riccardo Comin,
Ronny Thomale,
Tim O. Wehling,
Domenico Di Sante,
Giorgio Sangiovanni
Abstract:
The microsopic origin of the charge-density wave (CDW) in AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome metals remains a longstanding question, often revolving around electron-phonon coupling and purely electronic mechanisms involving Van Hove scenarios, nesting, and sublattice interference. To reveal the processes driving the CDW transition, we combine ab-initio calculations analysis of the phonon self-ene…
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The microsopic origin of the charge-density wave (CDW) in AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome metals remains a longstanding question, often revolving around electron-phonon coupling and purely electronic mechanisms involving Van Hove scenarios, nesting, and sublattice interference. To reveal the processes driving the CDW transition, we combine ab-initio calculations analysis of the phonon self-energy and angle-resolved photoemission spectroscopy (ARPES). Our momentum-resolved study, supported by ARPES data, reveals that lattice instabilities in the V-135 family of kagome metals appear to also be driven by electronic states far from high-symmetry points, where these states exhibit the strongest coupling with the phonon modes responsible for the CDW distortion. Footing on an interpretation scheme based on phonon fluctuation diagnostics, our work challenges and revises theories that so far have exclusively attributed CDW formation to nesting effects close to the Fermi level.
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Submitted 22 April, 2025; v1 submitted 10 April, 2025;
originally announced April 2025.
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Rapid analysis of point-contact Andreev reflection spectra via machine learning with adaptive data augmentation
Authors:
Dongik Lee,
Valentin Stanev,
Xiaohang Zhang,
Mijeong Kang,
Ichiro Takeuchi,
Seunghun Lee
Abstract:
Delineating the superconducting order parameters is a pivotal task in investigating superconductivity for probing pairing mechanisms, as well as their symmetry and topology. Point-contact Andreev reflection (PCAR) measurement is a simple yet powerful tool for identifying the order parameters. The PCAR spectra exhibit significant variations depending on the type of the order parameter in a supercon…
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Delineating the superconducting order parameters is a pivotal task in investigating superconductivity for probing pairing mechanisms, as well as their symmetry and topology. Point-contact Andreev reflection (PCAR) measurement is a simple yet powerful tool for identifying the order parameters. The PCAR spectra exhibit significant variations depending on the type of the order parameter in a superconductor, including its magnitude ($\mathitĪ$), as well as temperature, interfacial quality, Fermi velocity mismatch, and other factors. The information on the order parameter can be obtained by finding the combination of these parameters, generating a theoretical spectrum that fits a measured experimental spectrum. However, due to the complexity of the spectra and the high dimensionality of parameters, extracting the fitting parameters is often time-consuming and labor-intensive. In this study, we employ a convolutional neural network (CNN) algorithm to create models for rapid and automated analysis of PCAR spectra of various superconductors with different pairing symmetries (conventional $s$-wave, chiral $p_x+ip_y$-wave, and $d_{x^2-y^2}$-wave). The training datasets are generated based on the Blonder-Tinkham-Klapwijk (BTK) theory and further modified and augmented by selectively incorporating noise and peaks according to the bias voltages. This approach not only replicates the experimental spectra but also brings the model's attention to important features within the spectra. The optimized models provide fitting parameters for experimentally measured spectra in less than 100 ms per spectrum. Our approaches and findings pave the way for rapid and automated spectral analysis which will help accelerate research on superconductors with complex order parameters.
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Submitted 13 March, 2025;
originally announced March 2025.
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Measurements of the quantum geometric tensor in solids
Authors:
Mingu Kang,
Sunje Kim,
Yuting Qian,
Paul M. Neves,
Linda Ye,
Junseo Jung,
Denny Puntel,
Federico Mazzola,
Shiang Fang,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Jun Fuji,
Ivana Vobornik,
Jae-Hoon Park,
Joseph G. Checkelsky,
Bohm-Jung Yang,
Riccardo Comin
Abstract:
Understanding the geometric properties of quantum states and their implications in fundamental physical phenomena is at the core of modern physics. The Quantum Geometric Tensor (QGT) is a central physical object in this regard, encoding complete information about the geometry of the quantum state. The imaginary part of the QGT is the well-known Berry curvature, which plays a fundamental role in th…
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Understanding the geometric properties of quantum states and their implications in fundamental physical phenomena is at the core of modern physics. The Quantum Geometric Tensor (QGT) is a central physical object in this regard, encoding complete information about the geometry of the quantum state. The imaginary part of the QGT is the well-known Berry curvature, which plays a fundamental role in the topological magnetoelectric and optoelectronic phenomena. The real part of the QGT is the quantum metric, whose importance has come to prominence very recently, giving rise to a new set of quantum geometric phenomena, such as anomalous Landau levels, flat band superfluidity, excitonic Lamb shifts, and nonlinear Hall effect. Despite the central importance of the QGT, its experimental measurements have been restricted only to artificial two-level systems. In this work, we develop a framework to measure the QGT (both quantum metric and Berry curvature) in crystalline solids using polarization-, spin-, and angle-resolved photoemission spectroscopy. Using this framework, we demonstrate the effective reconstruction of the QGT in solids in the archetype kagome metal CoSn, which hosts topological flat bands. The key idea is to introduce another geometrical tensor, the quasi-QGT, whose components, the band Drude weight and orbital angular momentum, are experimentally accessible and can be used for extracting the QGT. Establishing such a momentum- and energy-resolved spectroscopic probe of the QGT is poised to significantly advance our understanding of quantum geometric responses in a wide range of crystalline systems.
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Submitted 23 December, 2024;
originally announced December 2024.
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Colossal optical anisotropy in wide-bandgap semiconductor CuAlO2
Authors:
Baekjune Kang,
Junhee Shin,
Myeongjun Kang,
Uksam Choi,
Uihyeon Seo,
Kunook Chung,
Jong Mok Ok,
Hosub Jin,
Changhee Sohn
Abstract:
Colossal optical anisotropy in the entire visible spectrum is crucial for advanced photonic applications, enabling precise light manipulation without optical loss across a broad spectral range. Here, we demonstrate that CuAlO2 exhibits colossal optical anisotropy and transparency across the visible spectrum, enabled by its unique three-dimensional O-Cu-O dumbbell structure and two-dimensionally co…
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Colossal optical anisotropy in the entire visible spectrum is crucial for advanced photonic applications, enabling precise light manipulation without optical loss across a broad spectral range. Here, we demonstrate that CuAlO2 exhibits colossal optical anisotropy and transparency across the visible spectrum, enabled by its unique three-dimensional O-Cu-O dumbbell structure and two-dimensionally confined excitons. Using mm-sized single crystals, we independently measured ab-plane and c-axis optical properties, revealing maximum birefringence (= 3.67) and linear dichroism (= 5.21), the highest reported to date. CuAlO2 retains birefringence over 0.5 throughout the entire visible range and possesses a wide direct bandgap of 3.71 eV, surpassing the birefringence of commercial anisotropic crystals transparent in the visible spectrum. From the two-dimensional screened hydrogen model and first-principles calculations, we demonstrate that the colossal anisotropy arises from a unique excitonic Cu d-p transition confined to the atomic-thick layer. This colossal optical anisotropy and transparency across the entire visible spectrum makes CuAlO2 a promising candidate for future photonic technologies.
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Submitted 17 December, 2024;
originally announced December 2024.
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Skyrmion Emergence via Domain Wall Anchoring through Vertical Bloch Line
Authors:
Suyeong Jeong,
Dae-Han Jung,
Hee-Sung Han,
Ganghwi Kim,
Myeonghwan Kang,
Mi-Young Im,
Younggun Park,
Ki-Suk Lee
Abstract:
Skyrmions, topologically stable magnetic solitons characterized by whirling magnetization in nanoscale magnetic elements, show promise information carriers in spintronics and spin-based quantum computing due to their unique properties: small size, stability, and controllability. In this study, we introduce a novel method of skyrmion generation through domain wall deformation dynamics. Our analytic…
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Skyrmions, topologically stable magnetic solitons characterized by whirling magnetization in nanoscale magnetic elements, show promise information carriers in spintronics and spin-based quantum computing due to their unique properties: small size, stability, and controllability. In this study, we introduce a novel method of skyrmion generation through domain wall deformation dynamics. Our analytical and micromagnetic simulations demonstrate that domain wall motion exceeding the Walker threshold induces topological deformation of magnetic domain walls exhibiting Dzyaloshinskii-Moriya interaction. This deformation process catalyzes the emergence of skyrmions from magnetic domain wall structure distortion, specifically through the Anchoring of domain walls due to the vertical Bloch line. We elucidate the underlying mechanism of skyrmion generation, correlating it with topological transitions accompanied by burst energy dissipation through spin-wave radiation. Notably, we present robust skyrmion generation conditions through a comprehensive classification of domain wall distortion, including vertical Bloch line generation and annihilation in magnetic domain wall dynamics within a DMI system. These findings provide noble insights into topological behaviors of spin structures and offer a potential pathway for efficient, controlled skyrmion creation in the next-generation spintronic devices.
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Submitted 6 November, 2024;
originally announced November 2024.
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Superconductivity in the parent infinite-layer nickelate NdNiO$_2$
Authors:
C. T. Parzyck,
Y. Wu,
L. Bhatt,
M. Kang,
Z. Arthur,
T. M. Pedersen,
R. Sutarto,
S. Fan,
J. Pelliciari,
V. Bisogni,
G. Herranz,
A. B. Georgescu,
D. G. Hawthorn,
L. F. Kourkoutis,
D. A. Muller,
D. G. Schlom,
K. M. Shen
Abstract:
We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO$_2$. A combination of oxide molecular-beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples…
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We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO$_2$. A combination of oxide molecular-beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples with a variety of techniques, including electrical transport, scanning transmission electron microscopy, x-ray absorption spectroscopy, and resonant inelastic x-ray scattering, to investigate the possible origins of superconductivity. We propose that superconductivity could be intrinsic to the undoped infinite-layer nickelates but suppressed by disorder due to its nodal order parameter, a finding which would necessitate a reconsideration of the nickelate phase diagram. Another possible hypothesis is that the parent materials can be hole doped from randomly dispersed apical oxygen atoms, which would suggest an alternative pathway for achieving superconductivity.
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Submitted 2 October, 2024;
originally announced October 2024.
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Competing Ordinary and Hanle Magnetoresistance in Pt and Ti Thin Films
Authors:
Sebastian Sailler,
Giacomo Sala,
Denise Reustlen,
Richard Schlitz,
Min-Gu Kang,
Pietro Gambardella,
Sebastian T. B. Goennenwein,
Michaela Lammel
Abstract:
One of the key elements in spintronics research is the spin Hall effect, allowing to generate spin currents from charge currents. A large spin Hall effect is observed in materials with strong spin orbit coupling, e.g., Pt. Recent research suggests the existence of an orbital Hall effect, the orbital analogue to the spin Hall effect, which also arises in weakly spin orbit coupled materials like Ti,…
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One of the key elements in spintronics research is the spin Hall effect, allowing to generate spin currents from charge currents. A large spin Hall effect is observed in materials with strong spin orbit coupling, e.g., Pt. Recent research suggests the existence of an orbital Hall effect, the orbital analogue to the spin Hall effect, which also arises in weakly spin orbit coupled materials like Ti, Mn or Cr. In Pt both effects are predicted to coexist. In any of these materials, a magnetic field perpendicular to the spin or orbital accumulation leads to additional Hanle dephasing and thereby the Hanle magnetoresistance (MR). To reveal the MR behavior of a material with both spin and orbital Hall effect, we thus study the MR of Pt thin films over a wide range of thicknesses. Careful evaluation shows that the MR of our textured samples is dominated by the ordinary MR rather than by the Hanle effect. We analyze the intrinsic properties of Pt films deposited by different groups and show that next to the resistivity also the structural properties of the film influence which MR dominates. We further show that this correlation can be found in both spin Hall active materials like Pt and orbital Hall active materials, like Ti. For both materials, the crystalline samples shows a MR attributed to the ordinary MR, whereas we find a large Hanle MR for the samples without apparent structural order. We then provide a set of rules to distinguish between the ordinary and the Hanle MR. We conclude that in all materials with a spin or orbital Hall effect the Hanle MR and the ordinary MR coexist and the purity and crystallinity of the thin film determine the dominating effect.
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Submitted 26 September, 2024;
originally announced September 2024.
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Unravelling and circumventing failure mechanisms in chalcogenide optical phase change materials
Authors:
Cosmin Constantin Popescu,
Kiumars Aryana,
Brian Mills,
Tae Woo Lee,
Louis Martin-Monier,
Luigi Ranno,
Jia Xu Brian Sia,
Khoi Phuong Dao,
Hyung-Bin Bae,
Vladimir Liberman,
Steven Vitale,
Myungkoo Kang,
Kathleen A. Richardson,
Carlos A. RĆos Ocampo,
Dennis Calahan,
Yifei Zhang,
William M. Humphreys,
Hyun Jung Kim,
Tian Gu,
Juejun Hu
Abstract:
Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, we performed a systematic study…
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Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, we performed a systematic study elucidating the cycling failure mechanisms of Ge$_2$Sb$_2$Se$_4$Te (GSST), a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on-chip photonic devices. We further propose a set of design rules building on insights into the failure mechanisms, and successfully implemented them to boost the endurance of the GSST device to over 67,000 cycles.
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Submitted 18 September, 2024;
originally announced September 2024.
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Anisotropic Spin Stripe Domains in Bilayer La$_3$Ni$_2$O$_7$
Authors:
N. K Gupta,
R. Gong,
Y. Wu,
M. Kang,
C. T. Parzyck,
B. Z. Gregory,
N. Costa,
R. Sutarto,
S. Sarker,
A. Singer,
D. G. Schlom,
K. M. Shen,
D. G. Hawthorn
Abstract:
The discovery of superconductivity in La$_3$Ni$_2$O$_7$ under pressure has motivated the investigation of a parent spin density wave (SDW) state which could provide the underlying pairing interaction. Here, we employ resonant soft x-ray scattering and polarimetry on thin films of bilayer La$_3$Ni$_2$O$_7$ to determine that the magnetic structure of the SDW forms unidirectional diagonal spin stripe…
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The discovery of superconductivity in La$_3$Ni$_2$O$_7$ under pressure has motivated the investigation of a parent spin density wave (SDW) state which could provide the underlying pairing interaction. Here, we employ resonant soft x-ray scattering and polarimetry on thin films of bilayer La$_3$Ni$_2$O$_7$ to determine that the magnetic structure of the SDW forms unidirectional diagonal spin stripes with moments lying within the NiO$_2$ plane and perpendicular to $\mathbf{Q}_{SDW}$, but without the strong charge disproportionation typically associated with other nickelates. These stripes form anisotropic domains with shorter correlation lengths perpendicular versus parallel to $\mathbf{Q}_{SDW}$, revealing nanoscale rotational and translational symmetry breaking analogous to the cuprate and Fe-based superconductors, with Bloch-like antiferromagnetic domain walls separating orthogonal domains.
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Submitted 4 September, 2024;
originally announced September 2024.
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Band-selective simulation of photoelectron intensity and converging Berry phase in trilayer graphene
Authors:
Hayoon Im,
Sue Hyeon Hwang,
Minhee Kang,
Kyoo Kim,
Haeyong Kang,
Choongyu Hwang
Abstract:
Berry phase is one of the key elements to understand quantum-mechanical phenomena such as the Aharonov-Bohm effect and the unconventional Hall effect in graphene. The Berry phase in monolayer and bilayer graphene has been manifested by the anisotropic distribution of photoelectron intensity along a closed loop in the momentum space as well as its rotation by a characteristic angle upon rotating li…
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Berry phase is one of the key elements to understand quantum-mechanical phenomena such as the Aharonov-Bohm effect and the unconventional Hall effect in graphene. The Berry phase in monolayer and bilayer graphene has been manifested by the anisotropic distribution of photoelectron intensity along a closed loop in the momentum space as well as its rotation by a characteristic angle upon rotating light polarization. Here we report the band-selective simulation of photoelectron intensity of trilayer graphene to understand its Berry phase within the tight-binding formalism. ABC- and ABA-stacked trilayer graphene show characteristic rotational angles of photoelectron intensity distribution, as predicted from their well-known Berry phases. Surprisingly, however, in ABA-stacked trilayer graphene, the rotational angle changes upon approaching toward the band touching point between the conduction and valence bands, which suggest that Berry phase changes as a function of binding energy. The binding energy-dependent Berry phase is attributed to the enhanced hybridization of the two electron bands of ABA-stacked trilayer graphene that converge at the band touching point, resulting in the converging Berry phase. These findings will provide an efficient way of tuning Berry phase and hence exotic phenomena stemming from the Berry phase.
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Submitted 14 August, 2024;
originally announced August 2024.
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Giant Uniaxial Magnetocrystalline Anisotropy in SmCrGe$_3$
Authors:
Mingyu Xu,
Yongbin Lee,
Xianglin Ke,
Min-Chul Kang,
Matt Boswell,
Sergey. L. Bud'ko,
Lin Zhou,
Liqin Ke,
Mingda Li,
Paul. C. Canfield,
Weiwei Xie
Abstract:
Magnetic anisotropy is a crucial characteristic for enhancing spintronic device performance. The synthesis of SmCrGe$_3$ single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Ele…
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Magnetic anisotropy is a crucial characteristic for enhancing spintronic device performance. The synthesis of SmCrGe$_3$ single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature ($T_C$) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie-Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculations explored the electronic structures and magnetic properties of SmCrGe$_3$, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/f.u.. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/f.u..
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Submitted 7 August, 2024;
originally announced August 2024.
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Orbital Torque in Rare-Earth Transition-Metal Ferrimagnets
Authors:
Shilei Ding,
Min-Gu Kang,
William Legrand,
Pietro Gambardella
Abstract:
Orbital currents have recently emerged as a promising tool to achieve electrical control of the magnetization in thin-film ferromagnets. Efficient orbital-to-spin conversion is required in order to torque the magnetization. Here we show that the injection of an orbital current in a ferrimagnetic GdyCo100-y alloy generates strong orbital torques whose sign and magnitude can be tuned by changing the…
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Orbital currents have recently emerged as a promising tool to achieve electrical control of the magnetization in thin-film ferromagnets. Efficient orbital-to-spin conversion is required in order to torque the magnetization. Here we show that the injection of an orbital current in a ferrimagnetic GdyCo100-y alloy generates strong orbital torques whose sign and magnitude can be tuned by changing the Gd content and temperature. The effective spin-orbital Hall angle reaches up to -0.25 in a GdyCo100-y/CuOx bilayer compared to +0.03 in Co/CuOx and +0.13 in GdyCo100-y/Pt. This behavior is attributed to the local orbital-to-spin conversion taking place at the Gd sites, which is about five times stronger and of the opposite sign relative to Co. Furthermore, we observe a manyfold increase in the net orbital torque at low temperature, which we attribute to the improved conversion efficiency following the magnetic ordering of the Gd and Co sublattices.
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Submitted 28 June, 2024;
originally announced June 2024.
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Evidence of surface $p$-wave superconductivity and higher-order topology in MoTe$_2$
Authors:
Sangyun Lee,
Myungjun Kang,
Duk Y. Kim,
Jihyun Kim,
Suyeon Cho,
Sangmo Cheon,
Tuson Park
Abstract:
Exploration of nontrivial superconductivity and electronic band topology is at the core of condensed matter physics and applications to quantum information. The transition-metal dichalcogenide (TMDC) MoTe$_2$ has been proposed as an ideal candidate to explore the interplay between topology and superconductivity, but their studies remain limited regarding the required high-pressure environments. He…
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Exploration of nontrivial superconductivity and electronic band topology is at the core of condensed matter physics and applications to quantum information. The transition-metal dichalcogenide (TMDC) MoTe$_2$ has been proposed as an ideal candidate to explore the interplay between topology and superconductivity, but their studies remain limited regarding the required high-pressure environments. Here, we observe proximity-induced surface $p$-wave superconductivity, and investigate the higher-order topological nature of MoTe$_2$ in its 1T$'$ phase, which emerges from the T$_d$ phase through a high-pressure-induced topological phase transition. Using surface-sensitive soft-point-contact Andreev reflection spectroscopy, we confirm the emergence of surface $s+p$-wave superconductivity via the BTK model as well as a zero-bias conductance peak. Such surface $p$-wave superconductivity emerges via the proximity effect between an $s$-wave superconducting band and a second-order topological band, which is protected by the time-reversal and inversion symmetries. The temperature dependence of the surface $p$-wave superconducting gap shows a correlation with that of the bulk $s$-wave gap, as well as its suppression by an external magnetic field or a reduction in pressure, implying its proximity-induced origin. Moreover, we suggest that the topological hinge states, derived from second-order topological bands, evolve into zero-energy Majorana corner states in this proximity-effect-induced third-order topological superconducting phase. These results demonstrate the potential realization of topological superconductivity in MoTe$_2$, thus opening a pathway for studying various topological natures of TMDC materials.
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Submitted 14 May, 2025; v1 submitted 11 June, 2024;
originally announced June 2024.
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Sub-symmetry Protected Topology in Topological Insulators and Superconductors
Authors:
Myungjun Kang,
Mingyu Lee,
Sangmo Cheon
Abstract:
Exploration of topology protected by a certain symmetry is central in condensed matter physics. A recent idea of sub-symmetry-protected (SSP) topology--remains of a broken symmetry can still protect specific topological boundary states--has been developed and demonstrated in an optical system [Nat. Phys. 19, 992-998 (2023)]. Here, we extend this idea further by applying sub-symmetry-protecting per…
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Exploration of topology protected by a certain symmetry is central in condensed matter physics. A recent idea of sub-symmetry-protected (SSP) topology--remains of a broken symmetry can still protect specific topological boundary states--has been developed and demonstrated in an optical system [Nat. Phys. 19, 992-998 (2023)]. Here, we extend this idea further by applying sub-symmetry-protecting perturbation (SSPP) to one-dimensional topological insulating and superconducting systems using the Su-Schrieffer-Hegger (SSH) and Kitaev models. Using the tight-binding and low-energy effective theory, we show that the SSP boundary states retain topological properties while the SSPP results in the asymmetry of boundary states. For the SSH model, an SSP zero-energy edge state localized on one edge possesses quantized polarization. In contrast, the other edge state is perturbed to have non-zero energy, and its polarization is not quantized. For topological superconductors, zero-energy SSP Majorana boundary states for spinful Kitaev models emerge on only one edge, contrary to the conventional belief that Majorana fermions emerge at opposite edges. Our findings can be used as a platform to expand our understanding of topological materials as they broaden our understanding of the symmetry in a topological system and a method to engineer Majorana fermions.
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Submitted 3 June, 2024;
originally announced June 2024.
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Hardware-efficient ansatz without barren plateaus in any depth
Authors:
Chae-Yeun Park,
Minhyeok Kang,
Joonsuk Huh
Abstract:
Variational quantum circuits have recently gained much interest due to their relevance in real-world applications, such as combinatorial optimizations, quantum simulations, and modeling a probability distribution. Despite their huge potential, the practical usefulness of those circuits beyond tens of qubits is largely questioned. One of the major problems is the so-called barren plateaus phenomeno…
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Variational quantum circuits have recently gained much interest due to their relevance in real-world applications, such as combinatorial optimizations, quantum simulations, and modeling a probability distribution. Despite their huge potential, the practical usefulness of those circuits beyond tens of qubits is largely questioned. One of the major problems is the so-called barren plateaus phenomenon. Quantum circuits with a random structure often have a flat cost-function landscape and thus cannot be trained efficiently. In this paper, we propose two novel parameter conditions in which the hardware-efficient ansatz (HEA) is free from barren plateaus for arbitrary circuit depths. In the first condition, the HEA approximates to a time-evolution operator generated by a local Hamiltonian. Utilizing a recent result by [Park and Killoran, Quantum 8, 1239 (2024)], we prove a constant lower bound of gradient magnitudes in any depth both for local and global observables. On the other hand, the HEA is within the many-body localized (MBL) phase in the second parameter condition. We argue that the HEA in this phase has a large gradient component for a local observable using a phenomenological model for the MBL system. By initializing the parameters of the HEA using these conditions, we show that our findings offer better overall performance in solving many-body Hamiltonians. Our results indicate that barren plateaus are not an issue when initial parameters are smartly chosen, and other factors, such as local minima or the expressivity of the circuit, are more crucial.
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Submitted 7 March, 2024;
originally announced March 2024.
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Nodal fermions in a strongly spin-orbit coupled frustrated pyrochlore superconductor
Authors:
Dongjin Oh,
Junha Kang,
Yuting Qian,
Shiang Fang,
Mingu Kang,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Joseph G. Checkelsky,
Liang Fu,
Tomasz Klimczuk,
Michal J. Winiarski,
Bohm-Jung Yang,
Riccardo Comin
Abstract:
The pyrochlore lattice, a three-dimensional network of corner-sharing tetrahedra, is a promising material playground for correlated topological phases arising from the interplay between spin-orbit coupling (SOC) and electron-electron interactions. Due to its geometrically frustrated lattice structure, exotic correlated states on the pyrochlore lattice have been extensively studied using various sp…
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The pyrochlore lattice, a three-dimensional network of corner-sharing tetrahedra, is a promising material playground for correlated topological phases arising from the interplay between spin-orbit coupling (SOC) and electron-electron interactions. Due to its geometrically frustrated lattice structure, exotic correlated states on the pyrochlore lattice have been extensively studied using various spin Hamiltonians in the localized limit. On the other hand, the topological properties of the electronic structure in the pyrochlore lattice have rarely been explored, due to the scarcity of pyrochlore materials in the itinerant paramagnetic limit. Here, we explore the topological electronic band structure of pyrochlore superconductor RbBi$_{2}$ using angle-resolved photoemission spectroscopy. Thanks to the strong SOC of the Bi pyrochlore network, we experimentally confirm the existence of three-dimensional (3D) massless Dirac fermions enforced by nonsymmorphic symmetry, as well as a 3D quadratic band crossing protected by cubic crystalline symmetry. Furthermore, we identify an additional 3D linear Dirac dispersion associated with band inversion protected by threefold rotation symmetry. These observations reveal the rich non-trivial band topology of itinerant pyrochlore lattice systems in the strong SOC regime. Through manipulation of electron correlations and SOC of the frustrated pyrochlore lattices, this material platform is a natural host for exotic phases of matter, including the fractionalized quantum spin Hall effect in the topological Mott insulator phase, as well as axion electrodynamics in the axion insulator phase.
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Submitted 6 February, 2024;
originally announced February 2024.
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Topological Domain-Wall States Hosting Quantized Polarization and Majorana Zero Modes Without Bulk Boundary Correspondence
Authors:
Sang-Hoon Han,
Myungjun Kang,
Moon Jip Park,
Sangmo Cheon
Abstract:
Bulk-boundary correspondence is a concept for topological insulators and superconductors that determines the existence of topological boundary states within the tenfold classification table. Contrary to this belief, we demonstrate that topological domain-wall states can emerge in all forbidden 1D classes in the classification table using representative generalized Su-Schrieffer-Heeger and Kitaev m…
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Bulk-boundary correspondence is a concept for topological insulators and superconductors that determines the existence of topological boundary states within the tenfold classification table. Contrary to this belief, we demonstrate that topological domain-wall states can emerge in all forbidden 1D classes in the classification table using representative generalized Su-Schrieffer-Heeger and Kitaev models, which manifests as quantized electric dipole moments and Majorana zero modes, respectively. We first show that a zero-energy domain-wall state can possess a quantized polarization, even if the polarization of individual domains is not inherently quantized. A quantized Berry phase difference between the domains confirms the non-trivial nature of the domain-wall states, implying a general-bulk-boundary principle, further confirmed by the tight-binding, topological field, and low-energy effective theories. Our methodology is then extended to a superconducting system, resulting in Majorana zero modes on the domain wall of a generalized Kitaev model. Finally, we suggest potential systems where our results may be realized, spanning from condensed matter to optical.
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Submitted 15 November, 2023;
originally announced November 2023.
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Transport collapse in dynamically evolving networks
Authors:
Geoffroy Berthelot,
Liubov Tupikina,
Min-Yeong Kang,
JƩrƓme Dedecker,
Denis S. Grebenkov
Abstract:
Transport in complex networks can describe a variety of natural and human-engineered processes including biological, societal and technological ones. However, how the properties of the source and drain nodes can affect transport subject to random failures, attacks or maintenance optimization in the network remain unknown. In this paper, the effects of both the distance between the source and drain…
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Transport in complex networks can describe a variety of natural and human-engineered processes including biological, societal and technological ones. However, how the properties of the source and drain nodes can affect transport subject to random failures, attacks or maintenance optimization in the network remain unknown. In this paper, the effects of both the distance between the source and drain nodes and of the degree of the source node on the time of transport collapse are studied in scale-free and lattice-based transport networks. These effects are numerically evaluated for two strategies, which employ either transport-based or random link removal. Scale-free networks with small distances are found to result in larger times of collapse. In lattice-based networks, both the dimension and boundary conditions are shown to have a major effect on the time of collapse. We also show that adding a direct link between the source and the drain increases the robustness of scale-free networks when subject to random link removals. Interestingly, the distribution of the times of collapse is then similar to the one of lattice-based networks.
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Submitted 18 October, 2023;
originally announced October 2023.
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Theoretical investigation of delafossite-Cu2ZnSnO4 as a promising photovoltaic absorber
Authors:
Seoung-Hun Kang,
Myeongjun Kang,
Sang Woon Hwang,
Sinchul Yeom,
Mina Yoon,
Jong Mok Ok,
Sangmoon Yoon
Abstract:
In the quest for efficient and cost-effective photovoltaic absorber materials beyond silicon, considerable attention has been directed toward exploring alternatives. One such material, zincblende-derived Cu2ZnSnS4 (CZTS), has shown promise due to its ideal band-gap size and high absorption coefficient. However, challenges such as structural defects and secondary phase formation have hindered its d…
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In the quest for efficient and cost-effective photovoltaic absorber materials beyond silicon, considerable attention has been directed toward exploring alternatives. One such material, zincblende-derived Cu2ZnSnS4 (CZTS), has shown promise due to its ideal band-gap size and high absorption coefficient. However, challenges such as structural defects and secondary phase formation have hindered its development. In this study, we examine the potential of another compound Cu2ZnSnO4 (CZTO) with a similar composition to CZTS as a promising alternative. Employing ab initio density function theory (DFT) calculations in combination with an evolutionary structure prediction algorithm, we identify that the crystalline phase of the delafossite structure is the most stable among the 900 (meta)stable CZTO. Its thermodynamic stability at room temperature is also confirmed by the molecular dynamics study. Excitingly, this new phase of CZTO displays a direct band gap where the dipole-allowed transition occurs, making it a strong candidate for efficient light absorption. Furthermore, the estimation of spectroscopic limited maximum efficiency (SLME) directly demonstrates the high potential of delafossite-CZTO as a photovoltaic absorber. Our numerical results suggest that delafossite-CZTO holds another promise for future photovoltaic applications.
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Submitted 17 October, 2023;
originally announced October 2023.
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An Open-Source Multi-functional Testing Platform for Optical Phase Change Materials
Authors:
Cosmin-Constantin Popescu,
Khoi Phuong Dao,
Luigi Ranno,
Brian Mills,
Louis Martin,
Yifei Zhang,
David Bono. Brian Neltner,
Tian Gu,
Juejun Hu,
Kiumars Aryana,
William M. Humphreys,
Hyun Jung Kim,
Steven Vitale,
Paul Miller,
Christopher Roberts,
Sarah Geiger,
Dennis Callahan,
Michael Moebius,
Myungkoo Kang,
Kathleen Richardson,
Carlos A. RĆos Ocampo
Abstract:
Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ mea…
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Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ measurement of structural, kinetic, optical, and thermal properties of these materials. The platform can be fabricated leveraging industry-standard silicon foundry manufacturing processes. We fully open-sourced this platform, including complete hardware design and associated software codes.
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Submitted 12 July, 2023;
originally announced July 2023.
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Photoinduced dynamics of flat bands in the kagome metal CoSn
Authors:
Denny Puntel,
Wibke Bronsch,
Manuel Tuniz,
Mingu Kang,
Paul M. Neves,
Shiang Fang,
Efthimios Kaxiras,
Joseph G. Checkelsky,
Riccardo Comin,
Fulvio Parmigiani,
Federico Cilento
Abstract:
CoSn is a prototypical kagome compound showing lattice-born flat bands with suppressed bandwidth over large parts of the Brillouin zone. Here, by means of time- and angle-resolved photoelectron spectroscopy, we provide direct evidence of the response to photoexcitation of the flat bands, that underlie information about localization in real space. In particular, we detect a sudden shift and broaden…
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CoSn is a prototypical kagome compound showing lattice-born flat bands with suppressed bandwidth over large parts of the Brillouin zone. Here, by means of time- and angle-resolved photoelectron spectroscopy, we provide direct evidence of the response to photoexcitation of the flat bands, that underlie information about localization in real space. In particular, we detect a sudden shift and broadening of the flat bands, while after one picosecond only a broadening survives. We ascribe both these effects to an ultrafast disruption of electron localization, which renormalizes the effective electron-electron interaction and affects the flat band dispersion. Since both variations are in the order of a few meV, our measurements suggest that the flat bands are resilient to near-infrared photoexcitation.
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Submitted 16 May, 2023;
originally announced May 2023.
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Nature of charge density wave in kagome metal ScV6Sn6
Authors:
Seongyong Lee,
Choongjae Won,
Jimin Kim,
Jonggyu Yoo,
Sudong Park,
Jonathan Denlinger,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Riccardo Comin,
Mingu Kang,
Jae-Hoon Park
Abstract:
Kagome lattice materials offer a fertile ground to discover novel quantum phases of matter, ranging from unconventional superconductivity and quantum spin liquids to charge orders of various profiles. However, understanding the genuine origin of the quantum phases in kagome materials is often challenging, owing to the intertwined atomic, electronic, and structural degrees of freedom. Here, we comb…
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Kagome lattice materials offer a fertile ground to discover novel quantum phases of matter, ranging from unconventional superconductivity and quantum spin liquids to charge orders of various profiles. However, understanding the genuine origin of the quantum phases in kagome materials is often challenging, owing to the intertwined atomic, electronic, and structural degrees of freedom. Here, we combine angle-resolved photoemission spectroscopy, phonon mode calculation, and chemical doping to elucidate the driving mechanism of the root3*root3 charge order in a newly discovered kagome metal ScV6Sn6. In contrast to the case of the archetype kagome system AV3Sb5 (A= K, Rb, Cs), the van Hove singularities in ScV6Sn6 remain intact across the charge order transition, indicating a marginal role of the electronic instability from the V kagome lattice. Instead, we identified a three-dimensional band with dominant planar Sn character opening a large charge order gap of 260 meV and strongly reconstructing the Fermi surface. Our complementary phonon dispersion calculations further emphasize the role of the structural components other than the V kagome lattice by revealing the unstable planar Sn and Sc phonon modes associated to the root3*root3 phase. Finally, in the constructed phase diagram of Sc(V1-xCrx)6Sn6, the charge order remains robust in a wide doping range x = 0 ~ 0.10 against the Fermi level shift up to ~ 120 meV, further making the electronic scenarios such as Fermi surface or saddle point nesting unlikely. Our multimodal investigations demonstrate that the physics of ScV6Sn6 is fundamentally different from the canonical kagome metal AV3Sb5, uncovering a new mechanism to induce symmetry-breaking phase transition in kagome lattice materials.
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Submitted 24 April, 2023;
originally announced April 2023.
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Collective nature of orbital excitations in layered cuprates in the absence of apical oxygens
Authors:
Leonardo Martinelli,
Krzysztof Wohlfeld,
Jonathan Pelliciari,
Riccardo Arpaia,
Nicholas B. Brookes,
Daniele Di Castro,
Mirian G. Fernandez,
Mingu Kang,
Yoshiharu Krockenberger,
Kurt Kummer,
Daniel E. McNally,
Eugenio Paris,
Thorsten Schmitt,
Hideki Yamamoto,
Andrew Walters,
Ke-Jin Zhou,
Lucio Braicovich,
Riccardo Comin,
Marco Moretti Sala,
Thomas P. Devereaux,
Maria Daghofer,
Giacomo Ghiringhelli
Abstract:
We have investigated the 3d orbital excitations in CaCuO2 (CCO), Nd2CuO4 (NCO), and La2CuO4 (LCO) using high-resolution resonant inelastic x-ray scattering. In LCO they behave as well-localized excitations, similarly to several other cuprates. On the contrary, in CCO and NCO the dxy orbital clearly disperse, pointing to a collective character of this excitation (orbiton) in compounds without apica…
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We have investigated the 3d orbital excitations in CaCuO2 (CCO), Nd2CuO4 (NCO), and La2CuO4 (LCO) using high-resolution resonant inelastic x-ray scattering. In LCO they behave as well-localized excitations, similarly to several other cuprates. On the contrary, in CCO and NCO the dxy orbital clearly disperse, pointing to a collective character of this excitation (orbiton) in compounds without apical oxygen. We ascribe the origin of the dispersion as stemming from a substantial next-nearest-neighbor (NNN) orbital superexchange. Such an exchange leads to the liberation of orbiton from its coupling to magnons, which is associated with the orbiton hopping between nearest neighbor copper sites. We show that the exceptionally large NNN orbital superexchange can be traced back to the absence of apical oxygens suppressing the charge transfer energy.
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Submitted 9 February, 2024; v1 submitted 4 April, 2023;
originally announced April 2023.
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2D MXene Electrochemical Transistors
Authors:
Jyoti Shakya,
Min-A Kang,
Jian Li,
Armin VahidMohammadi,
Weiqian Tian,
Erica Zeglio,
Mahiar Max Hamedi
Abstract:
In the past two decades another transistor based on conducting polymers, called the organic electrochemical transistor (ECT) was shown and largely studied. The main difference between organic ECTs and FETs is the mode and extent of channel doping: while in FETs the channel only has surface doping through dipoles, the mixed ionic-electronic conductivity of the channel material in Organic ECTs enabl…
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In the past two decades another transistor based on conducting polymers, called the organic electrochemical transistor (ECT) was shown and largely studied. The main difference between organic ECTs and FETs is the mode and extent of channel doping: while in FETs the channel only has surface doping through dipoles, the mixed ionic-electronic conductivity of the channel material in Organic ECTs enables bulk electrochemical doping. As a result, the organic ECT maximizes conductance modulation at the expense of speed. Until now ECTs have been based on conducting polymers, but here we show that MXenes, a class of 2D materials beyond graphene, have mixed ionic-electronic properties that enable the realization of electrochemical transistors (ECTs). We show that the formulas for organic ECTs can be applied to these 2D ECTs and used to extract parameters like mobility. These MXene ECTs have high transconductance values but low on-off ratios. We further show that conductance switching data measured using ECT, in combination with other in-situ ex-situ electrochemical measurements, is a powerful tool for correlating the change in conductance to that of redox state: to our knowledge, this is the first report of this important correlation for MXene films. Many future possibilities exist for MXenes ECTs, and we think other 2D materials with bandgaps can also form ECTs with single or heterostructured 2D materials. 2D ECTs can draw great inspiration and theoretical tools from the field of organic ECTs and have the potential to considerably extend the capabilities of transistors beyond that of conducting polymer ECTs, with added properties such as extreme heat resistance, tolerance for solvents, and higher conductivity for both electrons and ions than conducting polymers.
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Submitted 10 January, 2024; v1 submitted 19 March, 2023;
originally announced March 2023.
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Small Fermi pockets intertwined with charge stripes and pair density wave order in a kagome superconductor
Authors:
Hong Li,
Dongjin Oh,
Mingu Kang,
He Zhao,
Brenden R Ortiz,
Yuzki Oey,
Shiang Fang,
Zheng Ren,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Joseph G. Checkelsky,
Ziqiang Wang,
Stephen D. Wilson,
Riccardo Comin,
Ilija Zeljkovic
Abstract:
The kagome superconductor family AV3Sb5 (A=Cs, K, Rb) emerged as an exciting platform to study exotic Fermi surface instabilities. Here we use spectroscopic-imaging scanning tunneling microscopy (SI-STM) and angle-resolved photoemission spectroscopy (ARPES) to reveal how the surprising cascade of higher and lower-dimensional density waves in CsV3Sb5 is intimately tied to a set of small reconstruct…
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The kagome superconductor family AV3Sb5 (A=Cs, K, Rb) emerged as an exciting platform to study exotic Fermi surface instabilities. Here we use spectroscopic-imaging scanning tunneling microscopy (SI-STM) and angle-resolved photoemission spectroscopy (ARPES) to reveal how the surprising cascade of higher and lower-dimensional density waves in CsV3Sb5 is intimately tied to a set of small reconstructed Fermi pockets. ARPES measurements visualize the formation of these pockets generated by a 3D charge density wave transition. The pockets are connected by dispersive q* wave vectors observed in Fourier transforms of STM differential conductance maps. As the additional 1D charge order emerges at a lower temperature, q* wave vectors become substantially renormalized, signaling further reconstruction of the Fermi pockets. Remarkably, in the superconducting state, the superconducting gap modulations give rise to an in-plane Cooper pair-density-wave at the same q* wave vectors. Our work demonstrates the intrinsic origin of the charge-stripes and the pair-density-wave in CsV3Sb5 and their relationship to the Fermi pockets. These experiments uncover a unique scenario of how Fermi pockets generated by a parent charge density wave state can provide a favorable platform for the emergence of additional density waves.
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Submitted 13 March, 2023;
originally announced March 2023.
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Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia
Authors:
Seokjung Yun,
Hoon Kim,
Myungsoo Seo,
Min-Ho Kang,
Taeho Kim,
Seongwoo Cho,
Min Hyuk Park,
Sanghun Jeon,
Yang-Kyu Choi,
Seungbum Hong
Abstract:
Here, we optimized the annealing temperature of HZO/TiN thin film heterostructure via multiscale analysis of remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. We found that the remnant polarization was closely related to the relative amount of the orthorhombic phase whereas the minimum domain size was to the relative amount of the monoclinic p…
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Here, we optimized the annealing temperature of HZO/TiN thin film heterostructure via multiscale analysis of remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. We found that the remnant polarization was closely related to the relative amount of the orthorhombic phase whereas the minimum domain size was to the relative amount of the monoclinic phase. The minimum domain size was obtained at the annealing temperature of 500$^\cird$C while the optimum remnant polarization and capacitance at the annealing temperature of 600$^\circ$C. We conclude that the minimum domain size is more important than the sheer magnitude of remnant polarization considering the retention and fatigue of switchable polarization in nanoscale ferroelectric devices. Our results are expected to contribute to the development of ultra-low-power logic transistors and next-generation non-volatile memory devices.
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Submitted 12 January, 2023;
originally announced January 2023.
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Growth of delafossite CuAlO2 single crystals in a reactive crucible
Authors:
Du hyung Kim,
Minsik Kong,
Myeongjun Kang,
Minjae Kim,
Seohee Kim,
Youngwook Kim,
Sangmoon Yoon,
Jong Mok Ok
Abstract:
Delafossite oxide CuAlO2 has engaged great attention as a promising p-type conducting oxide. In this work, high-quality CuAlO2 single crystals with a size of several millimeters (mm) are successfully achieved with a reactive crucible melting method. The crystals are characterized by X-ray diffraction, scanning electron microscopy with energy-dispersive spectroscopy, transport measurement, and magn…
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Delafossite oxide CuAlO2 has engaged great attention as a promising p-type conducting oxide. In this work, high-quality CuAlO2 single crystals with a size of several millimeters (mm) are successfully achieved with a reactive crucible melting method. The crystals are characterized by X-ray diffraction, scanning electron microscopy with energy-dispersive spectroscopy, transport measurement, and magnetic susceptibility measurement. The grown single crystals are free of contamination from a copper oxide flux. This work provides a new approach to growing high-quality delafossite oxide CuAlO2 with a few mm size.
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Submitted 22 May, 2022;
originally announced May 2022.
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Discovery of an electronic crystal in a cuprate Mott insulator
Authors:
Mingu Kang,
Charles Zhang,
Enrico Schierle,
Stephen McCoy,
Jiarui Li,
Ronny Sutarto,
Feizhou He,
Andreas Suter,
Thomas Prokscha,
Zaher Salman,
Eugen Weschke,
Shane Cybart,
John Y. T. Wei,
Riccardo Comin
Abstract:
Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the yea…
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Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the years, various forms of electronic liquid crystal phases including charge/spin stripes and incommensurate charge-density-waves (CDWs) were found to emerge out of a correlated metallic ground state in underdoped cuprates. Early theoretical studies also predicted the emergence of a Coulomb-frustrated 'charge crystal' phase in the very lightly-doped, insulating limit of the CuO2 planes. Here, we use resonant X-ray scattering, electron transport, and muon spin rotation measurements to fully resolve the electronic and magnetic ground state and search for signatures of charge order in very lightly hole-doped cuprates from the RBa2Cu3O7-d family (RBCO; R: Y or rare earth). X-ray scattering data from RBCO films reveal a breaking of translational symmetry more pervasive than was previously known, extending down to the Mott limit. The ordering vector of this charge crystal state is linearly connected to the charge-density-waves of underdoped RBCO, suggesting that the former phase is a precursor to the latter as hole doping is increased. Most importantly, the coexistence of charge and spin order in RBCO suggests that this electronic symmetry-breaking state is common to the CuO2 planes in the very lightly-doped regime. These findings bridge the gap between the Mott insulating state and the underdoped metallic state and underscore the prominent role of Coulomb-frustrated electronic phase separation among all cuprates.
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Submitted 16 March, 2022;
originally announced March 2022.
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Charge order landscape and competition with superconductivity in kagome metals
Authors:
Mingu Kang,
Shiang Fang,
Jonggyu Yoo,
Brenden R. Ortiz,
Yuzki Oey,
Jonghyeok Choi,
Sae Hee Ryu,
Jimin Kim,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Efthimios Kaxiras,
Joseph G. Checkelsky,
Stephen D. Wilson,
Jae-Hoon Park,
Riccardo Comin
Abstract:
In kagome metals AV3Sb5 (A = K, Rb, Cs), three-dimensional charge order (3D-CO) is the primary instability that sets the stage for other collective orders to emerge, including unidirectional stripe order, orbital flux order, electronic nematicity, and superconductivity. Here, we use high-resolution angle-resolved photoemission spectroscopy to determine the microscopic structure of three-dimensiona…
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In kagome metals AV3Sb5 (A = K, Rb, Cs), three-dimensional charge order (3D-CO) is the primary instability that sets the stage for other collective orders to emerge, including unidirectional stripe order, orbital flux order, electronic nematicity, and superconductivity. Here, we use high-resolution angle-resolved photoemission spectroscopy to determine the microscopic structure of three-dimensional charge order (3D-CO) in AV3Sb5 and its interplay with superconductivity. Our approach is based on identifying an unusual splitting of kagome bands induced by 3D-CO, which provides a sensitive way to refine the spatial charge patterns in neighboring kagome planes. We found a marked dependence of the 3D-CO structure on composition and doping. The observed difference between CsV3Sb5 and the other compounds potentially underpins the double-dome superconductivity in CsV3(Sb,Sn)5 and the suppression of Tc in KV3Sb5 and RbV3Sb5. Our results provide fresh insights into the rich phase diagram of AV3Sb5.
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Submitted 22 December, 2022; v1 submitted 3 February, 2022;
originally announced February 2022.
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Low-threshold exciton transport and control in atomically thin semiconductors
Authors:
Hyeongwoo Lee,
Yeonjeong Koo,
Jinseong Choi,
Shailabh Kumar,
Hyoung-Taek Lee,
Gangseon Ji,
Soo Ho Choi,
Mingu Kang,
Ki Kang Kim,
Hyeong-Ryeol Park,
Hyuck Choo,
Kyoung-Duck Park
Abstract:
Understanding and controlling the nanoscale transport of excitonic quasiparticles in atomically thin 2D semiconductors is crucial to produce highly efficient nano-excitonic devices. Here, we present a nano-gap device to selectively confine excitons or trions of 2D transition metal dichalcogenides at the nanoscale, facilitated by the drift-dominant exciton funnelling into the strain-induced local s…
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Understanding and controlling the nanoscale transport of excitonic quasiparticles in atomically thin 2D semiconductors is crucial to produce highly efficient nano-excitonic devices. Here, we present a nano-gap device to selectively confine excitons or trions of 2D transition metal dichalcogenides at the nanoscale, facilitated by the drift-dominant exciton funnelling into the strain-induced local spot. We investigate the spatio-spectral characteristics of the funnelled excitons in a WSe2 monolayer (ML) and converted trions in a MoS2 ML using hyperspectral tip-enhanced photoluminescence (TEPL) imaging with <15 nm spatial resolution. In addition, we dynamically control the exciton funnelling and trion conversion rate by the GPa scale tip pressure engineering. Through a drift-diffusion model, we confirm an exciton funnelling efficiency of ~25 % with a significantly low strain threshold (~0.1 %) which sufficiently exceeds the efficiency of ~3 % in previous studies. This work provides a new strategy to facilitate efficient exciton transport and trion conversion of 2D semiconductor devices.
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Submitted 15 September, 2021;
originally announced September 2021.
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A flat band-induced correlated kagome metal
Authors:
Linda Ye,
Shiang Fang,
Min Gu Kang,
Josef Kaufmann,
Yonghun Lee,
Jonathan Denlinger,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Efthimios Kaxiras,
David C. Bell,
Oleg Janson,
Riccardo Comin,
Joseph G. Checkelsky
Abstract:
The notion of an electronic flat band refers to a collectively degenerate set of quantum mechanical eigenstates in periodic solids. The vanishing kinetic energy of flat bands relative to the electron-electron interaction is expected to result in a variety of many-body quantum phases of matter. Despite intense theoretical interest, systematic design and experimental realization of such flat band-dr…
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The notion of an electronic flat band refers to a collectively degenerate set of quantum mechanical eigenstates in periodic solids. The vanishing kinetic energy of flat bands relative to the electron-electron interaction is expected to result in a variety of many-body quantum phases of matter. Despite intense theoretical interest, systematic design and experimental realization of such flat band-driven correlated states in natural crystals have remained a challenge. Here we report the realization of a partially filled flat band in a new single crystalline kagome metal Ni$_3$In. This flat band is found to arise from the Ni $3d$-orbital wave functions localized at triangular motifs within the kagome lattice plane, where an underlying destructive interference among hopping paths flattens the dispersion. We observe unusual metallic and thermodynamic responses suggestive of the presence of local fluctuating magnetic moments originating from the flat band states, which together with non-Fermi liquid behavior indicate proximity to quantum criticality. These results demonstrate a lattice and orbital engineering approach to designing flat band-based many-body phenomena that may be applied to integrate correlation with topology and as a novel means to construct quantum criticality.
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Submitted 20 June, 2021;
originally announced June 2021.
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Long-Range Orbital Magnetoelectric Torque in Ferromagnets
Authors:
Dongwook Go,
Daegeun Jo,
Kyoung-Whan Kim,
Soogil Lee,
Min-Gu Kang,
Byong-Guk Park,
Stefan Blügel,
Hyun-Woo Lee,
Yuriy Mokrousov
Abstract:
While it is often assumed that the orbital response is suppressed and short-ranged due to strong crystal field potential and orbital quenching, we show that the orbital magnetoelectric response can be remarkably long-ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which r…
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While it is often assumed that the orbital response is suppressed and short-ranged due to strong crystal field potential and orbital quenching, we show that the orbital magnetoelectric response can be remarkably long-ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which rapidly oscillate and decay by spin dephasing. In contrast, we find that even when an external electric field is applied only on the nonmagnet, we find substantially long-ranged orbital magnetoelectric response in the FM, which can go far beyond the spin dephasing length. This unusual feature is attributed to nearly degenerate orbital characters imposed by the crystal symmetry, which form hotspots for the intrinsic orbital response. Because only the states near the hotspots contribute dominantly, the induced orbital angular momentum does not exhibit destructive interference among states with different momentum as in the case of the spin dephasing. This gives rise to a distinct type of orbital torque on the magnetization, increasing with the thickness of the ferromagnet. Such behavior may serve as critical long-sought evidence of orbital transport to be directly tested in experiments. Our findings open the possibility of using long-range orbital magnetoelectric effect in orbitronic device applications.
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Submitted 16 May, 2022; v1 submitted 15 June, 2021;
originally announced June 2021.
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Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching
Authors:
Soogil Lee,
Min-Gu Kang,
Dongwook Go,
Dohyoung Kim,
Jun-Ho Kang,
Taekhyeon Lee,
Geun-Hee Lee,
Nyun Jong Lee,
Sanghoon Kim,
Kab-Jin Kim,
Kyung-Jin Lee,
Byong-Guk Park
Abstract:
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report t…
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Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.
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Submitted 3 May, 2022; v1 submitted 4 June, 2021;
originally announced June 2021.
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Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
Authors:
Carlos RĆos,
Qingyang Du,
Yifei Zhang,
Cosmin-Constantin Popescu,
Mikhail Y. Shalaginov,
Paul Miller,
Christopher Roberts,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Steven A. Vitale,
Juejun Hu
Abstract:
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state…
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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $Ļ$/$μ$m and a low insertion loss of 0.3 dB/$Ļ$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter.
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Submitted 21 March, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5
Authors:
Mingu Kang,
Shiang Fang,
Jeong-Kyu Kim,
Brenden R. Ortiz,
Sae Hee Ryu,
Jimin Kim,
Jonggyu Yoo,
Giorgio Sangiovanni,
Domenico Di Sante,
Byeong-Gyu Park,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Efthimios Kaxiras,
Stephen D. Wilson,
Jae-Hoon Park,
Riccardo Comin
Abstract:
The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. H…
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The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. Here, we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHs) coexisting near the Fermi level of CsV3Sb5 and analyze their contribution to electronic symmetry breaking. Intriguingly, the vHs in CsV3Sb5 have two distinct flavors - p-type and m-type - which originate from their pure and mixed sublattice characters, respectively. This twofold vHs is unique property of the kagome lattice, and its flavor critically determines the pairing symmetry and ground states emerging in AV3Sb5 series. We establish that, among the multiple vHs in CsV3Sb5, the m-type vHs of the dxz/dyz kagome band and the p-type vHs of the dxy/dx2-y2 kagome band cross the Fermi level to set the stage for electronic symmetry breaking. The former band exhibits pronounced Fermi surface nesting, while the latter contributes via higher-order vHs. Our work reveals the essential role of kagome-derived vHs for the collective phenomena realized in the AV3Sb5 family, paving the way to a deeper understanding of strongly correlated topological kagome systems.
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Submitted 5 November, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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High-speed ionic synaptic memory based on two-dimensional titanium carbide MXene
Authors:
Armantas Melianas,
Min-A Kang,
Armin VahidMohammadi,
Weiqian Tian,
Yury Gogotsi,
Alberto Salleo,
Mahiar Max Hamedi
Abstract:
Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays as needed to surpass conventional computing efficiency. Electrochemical random-access memories (ECRAMs), where resist…
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Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays as needed to surpass conventional computing efficiency. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel address these challenges due to their linear switching and low noise. ECRAMs using two-dimensional (2D) materials and metal oxides suffer from slow ion kinetics, whereas organic ECRAMs enable high-speed operation but face significant challenges towards on-chip integration due to poor temperature stability of polymers. Here, we demonstrate ECRAMs using 2D titanium carbide (Ti3C2Tx) MXene that combines the high speed of organics and the integration compatibility of inorganic materials in a single high-performance device. Our ECRAMs combine the speed, linearity, write noise, switching energy and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back-end-of-line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 compositions synthesized to date, as very promising candidates for devices operating at the nexus of electrochemistry and electronics.
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Submitted 23 April, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Ferromagnetic helical nodal line and Kane-Mele spin-orbit coupling in kagome metal Fe3Sn2
Authors:
Shiang Fang,
Linda Ye,
Madhav Prasad Ghimire,
Min Gu Kang,
Junwei Liu,
Liang Fu,
Manuel Richter,
Jeroen van den Brink,
Efthimios Kaxiras,
Riccardo Comin,
Joseph G. Checkelsky
Abstract:
The two-dimensional kagome lattice hosts Dirac fermions at its Brillouin zone corners K and K', analogous to the honeycomb lattice. In the density functional theory electronic structure of ferromagnetic kagome metal Fe$_3$Sn$_2$, without spin-orbit coupling we identify two energetically split helical nodal lines winding along $z$ in the vicinity of K and K' resulting from the trigonal stacking of…
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The two-dimensional kagome lattice hosts Dirac fermions at its Brillouin zone corners K and K', analogous to the honeycomb lattice. In the density functional theory electronic structure of ferromagnetic kagome metal Fe$_3$Sn$_2$, without spin-orbit coupling we identify two energetically split helical nodal lines winding along $z$ in the vicinity of K and K' resulting from the trigonal stacking of the kagome layers. We find that hopping across A-A stacking introduces a layer splitting in energy while that across A-B stacking controls the momentum space amplitude of the helical nodal lines. The effect of spin-orbit coupling is found to resemble that of a Kane-Mele term, where the nodal lines can either be fully gapped to quasi-two-dimensional massive Dirac fermions, or remain gapless at discrete Weyl points depending on the ferromagnetic moment orientation. Aside from numerically establishing Fe$_3$Sn$_2$ as a model Dirac kagome metal, our results provide insights into materials design of topological phases from the lattice point of view, where paradigmatic low dimensional lattice models often find realizations in crystalline materials with three-dimensional stacking.
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Submitted 15 March, 2021;
originally announced March 2021.
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Realizations of Isostatic Material Frameworks
Authors:
Mahdi Sadjadi,
Varda F. Hagh,
Mingyu Kang,
Meera Sitharam,
Robert Connelly,
Steven J. Gortler,
Louis Theran,
Miranda Holmes-Cerfon,
M. F. Thorpe
Abstract:
This paper studies the set of equivalent realizations of isostatic frameworks in two dimensions, and algorithms for finding all such realizations. We show that an isostatic framework has an even number of equivalent realizations that preserve edge lengths and connectivity. We enumerate the complete set of equivalent realizations for a toy framework with pinned boundary in two dimensions and study…
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This paper studies the set of equivalent realizations of isostatic frameworks in two dimensions, and algorithms for finding all such realizations. We show that an isostatic framework has an even number of equivalent realizations that preserve edge lengths and connectivity. We enumerate the complete set of equivalent realizations for a toy framework with pinned boundary in two dimensions and study the impact of boundary length on the emergence of these realizations. To ameliorate the computational complexity of finding a solution to a large multivariate quadratic system corresponding to the constraints; alternative methods - based on constraint reduction and distance-based covering map or Cayley parameterization of the search space - are presented. The application of these methods is studied on atomic clusters, a model two-dimensional glasses, and jamming.
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Submitted 11 February, 2021;
originally announced February 2021.
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Tunable Kondo resonance at a pristine two-dimensional Dirac semimetal on a Kondo insulator
Authors:
Jinwoong Hwang,
Seungseok Lee,
Ji-Eun Lee,
Minhee Kang,
Hyejin Ryu,
Hyun-Jeong Joo,
Jonathan Denlinger,
Jae-Hoon Park,
Choongyu Hwang
Abstract:
Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a non-magnetic two-dimensional Dirac semimetal, when grown on SmB6, a Kondo insulator, via thermal decomposition of fullerene molecules. This ground state is typi…
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Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a non-magnetic two-dimensional Dirac semimetal, when grown on SmB6, a Kondo insulator, via thermal decomposition of fullerene molecules. This ground state is typically observed in three-dimensional magnetic materials with correlated electrons. Above the characteristic Kondo temperature of the substrate, the electron band structure of pristine graphene remains almost intact. As temperature decreases, however, the Dirac fermions of graphene become hybridized with the Sm 4f states. Remarkable enhancement of the hybridization and Kondo resonance is observed with further cooling and increasing charge carrier density of graphene, evidencing the Kondo screening of the Sm 4f local magnetic moment by the conduction electrons of graphene at the interface. These findings manifest the realization of the Kondo effect in graphene by the proximity of SmB6 that is tuned by temperature and charge carrier density of graphene.
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Submitted 11 February, 2021;
originally announced February 2021.
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Low-energy electrodynamics of Dirac semimetal phases in the doped Mott insulator Sr$_2$IrO$_4$
Authors:
Sun-Woo Kim,
Myungjun Kang,
Sangmo Cheon
Abstract:
Correlated Dirac semimetal phases emerge in lightly doped (Tb- or La-doped) Mott insulator Sr$_2$IrO$_4$, where a d-wave symmetry-breaking order underlying a pseudogap plays a crucial role in determining the nature of Dirac degeneracy, i.e., whether it is a Dirac line node or Dirac point node. Here, using a realistic five-orbital tight-binding model with a Hubbard U and a semiclassical Boltzmann t…
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Correlated Dirac semimetal phases emerge in lightly doped (Tb- or La-doped) Mott insulator Sr$_2$IrO$_4$, where a d-wave symmetry-breaking order underlying a pseudogap plays a crucial role in determining the nature of Dirac degeneracy, i.e., whether it is a Dirac line node or Dirac point node. Here, using a realistic five-orbital tight-binding model with a Hubbard U and a semiclassical Boltzmann transport theory, we systematically study the low-energy electrodynamic properties of the Dirac semimetal phases in the paramagnetic lightly doped Sr$_2$IrO$_4$. We investigate the effects of the d-wave electronic order and electron doping concentration on the electronic band structures and optical properties of various Dirac semimetal phases. We calculate the intraband optical conductivity and obtain electrodynamic parameters of dc conductivity, scattering rate, and Drude weight for three Dirac semimetal phases: two are Dirac point-node states observed in the 3% Tb-doped and 5% La-doped Sr$_2$IrO$_4$, and the other is a Dirac line-node state. Our results show that the temperature dependence of the electrodynamic parameters is strong in the Tb-doped system while weak in the La-doped and Dirac line-node systems, which are consistent with available experimental data. Moreover, using the low-energy effective theory, we also compare the temperature-dependent screening effect in the Tb- and La-doped systems using graphene as a reference. Our paper provides valuable insight for understanding the transport and optical properties of correlated Dirac semimetal phases in the doped Sr$_2$IrO$_4$.
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Submitted 15 January, 2021;
originally announced January 2021.
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Tip-induced nano-engineering of strain, bandgap, and exciton dynamics in 2D semiconductors
Authors:
Yeonjeong Koo,
Yongchul Kim,
Soo Ho Choi,
Hyeongwoo Lee,
Jinseong Choi,
Dong Yun Lee,
Mingu Kang,
Hyun Seok Lee,
Ki Kang Kim,
Geunsik Lee,
Kyoung-Duck Park
Abstract:
The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide range of ultrathin photonic devices. Recent strain-engineering approaches have enabled us to tune some of these properties, yet dynamic control at the nanoscale…
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The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide range of ultrathin photonic devices. Recent strain-engineering approaches have enabled us to tune some of these properties, yet dynamic control at the nanoscale with real-time and -space characterizations remains a challenge. Here, we demonstrate a dynamic nano-mechanical strain-engineering of naturally-formed wrinkles in a WSe2 monolayer, with real-time investigation of nano-spectroscopic properties using hyperspectral adaptive tip-enhanced PL (a-TEPL) spectroscopy. First, we characterize nanoscale wrinkles through hyperspectral a-TEPL nano-imaging with <15 nm spatial resolution which reveals the modified nano-excitonic properties by the induced tensile strain at the wrinkle apex, e.g., an increase in the quantum yield due to the exciton funneling, decrease in PL energy up to ~10 meV, and a symmetry change in the TEPL spectra caused by the reconfigured electronic bandstructure. We then dynamically engineer the local strain by pressing and releasing the wrinkle apex through an atomic force tip control. This nano-mechanical strain-engineering allows us to tune the exciton dynamics and emission properties at the nanoscale in a reversible fashion. In addition, we demonstrate a systematic switching and modulation platform of the wrinkle emission, which provides a new strategy for robust, tunable, and ultracompact nano-optical sources in atomically thin semiconductors.
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Submitted 7 December, 2020;
originally announced December 2020.
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Pseudo-Darwinian evolution of physical flows in complex networks
Authors:
Geoffroy Berthelot,
Liubov Tupikina,
Min-Yeong Kang,
Bernard Sapoval,
Denis S. Grebenkov
Abstract:
The evolution of complex transport networks is investigated under three strategies of link removal: random, intentional attack and "Pseudo-Darwinian" strategy. At each evolution step and regarding the selected strategy, one removes either a randomly chosen link, or the link carrying the strongest flux, or the link with the weakest flux, respectively. We study how the network structure and the tota…
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The evolution of complex transport networks is investigated under three strategies of link removal: random, intentional attack and "Pseudo-Darwinian" strategy. At each evolution step and regarding the selected strategy, one removes either a randomly chosen link, or the link carrying the strongest flux, or the link with the weakest flux, respectively. We study how the network structure and the total flux between randomly chosen source and drain nodes evolve. We discover a universal power-law decrease of the total flux, followed by an abrupt transport collapse. The time of collapse is shown to be determined by the average number of links per node in the initial network, highlighting the importance of this network property for ensuring safe and robust transport against random failures, intentional attacks and maintenance cost optimizations.
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Submitted 30 July, 2020;
originally announced July 2020.
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A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
Authors:
Ji-Eun Lee,
Jinwoong Hwang,
Minhee Kang,
Hyun-Jeong Joo,
Hyejin Ryu,
Kyoo Kim,
Yongsam Kim,
Namdong Kim,
Anh Tuan Duong,
Sunglae Cho,
Sung-Kwan Mo,
Choongyu Hwang,
Imjeong Ho-Soon Yang
Abstract:
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the…
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Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin {\it n}-region is formed between Ta-adsorbed surface and bulk.
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Submitted 18 July, 2020;
originally announced July 2020.
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Concomitant enhancement of electron-phonon coupling and electron-electron interaction in graphene decorated with ytterbium
Authors:
Minhee Kang,
Jinwoong Hwang,
Ji-Eun Lee,
Alexei Fedorov,
Choongyu Hwang
Abstract:
The interplay between electron-electron interaction and electron-phonon coupling has been one of the key issues in graphene as it can provide information on the origin of enhanced electron-phonon coupling in graphene by foreign atoms. In ytterbium-decorated graphene on SiC substrate, electron-phonon coupling exhibits strong enhancement compared to that of as-grown graphene. Based on angle-resolved…
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The interplay between electron-electron interaction and electron-phonon coupling has been one of the key issues in graphene as it can provide information on the origin of enhanced electron-phonon coupling in graphene by foreign atoms. In ytterbium-decorated graphene on SiC substrate, electron-phonon coupling exhibits strong enhancement compared to that of as-grown graphene. Based on angle-resolved photoemission study, the presence of ytterbium is also found to result in the decrease of Fermi velocity, revealing the enhancement of electron-electron interaction within the Fermi liquid theory. Our finding on the concomitant enhancement of electron-electron interaction and electron-phonon coupling suggests a possibility of the interplay between the two representative many-body interactions in graphene decorated with foreign atoms.
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Submitted 18 July, 2020;
originally announced July 2020.
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Topological flat bands in frustrated kagome lattice CoSn
Authors:
Mingu Kang,
Shiang Fang,
Linda Ye,
Hoi Chun Po,
Jonathan Denlinger,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Efthimios Kaxiras,
Joseph G. Checkelsky,
Riccardo Comin
Abstract:
Electronic flat bands in momentum space, arising from strong localization of electrons in real space, are an ideal stage to realize strong correlation phenomena. In certain lattices with built-in geometrical frustration, electronic confinement and flat bands can naturally arise from the destructive interference of electronic hopping pathways. Such lattice-borne flat bands are often endowed with no…
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Electronic flat bands in momentum space, arising from strong localization of electrons in real space, are an ideal stage to realize strong correlation phenomena. In certain lattices with built-in geometrical frustration, electronic confinement and flat bands can naturally arise from the destructive interference of electronic hopping pathways. Such lattice-borne flat bands are often endowed with nontrivial topology if combined with spin-orbit coupling, while their experimental realization in condensed matter system has been elusive so far. Here, we report the direct observation of topological flat bands in the vicinity of the Fermi level in frustrated kagome system CoSn, using angle-resolved photoemission spectroscopy and band structure calculations. The flat band manifests itself as a dispersionless electronic excitation along the G-M high symmetry direction, with an order of magnitude lower bandwidth (below 150 meV) compared to the Dirac bands originating from the same orbitals. The frustration-driven nature of the flat band is directly confirmed by the real-space chiral d-orbital texture of the corresponding effective Wannier wave functions. Spin-orbit coupling opens a large gap of 80 meV at the quadratic band touching point between the Dirac and flat bands, endowing a nonzero Z2 topological invariant to the flat band in the two-dimensional Brillouin zone. Our observation of lattice-driven topological flat band opens a promising route to engineer novel emergent phases of matter at the crossroad between strong correlation physics and electronic topology.
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Submitted 4 February, 2020;
originally announced February 2020.
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Optical Black-hole Analog Created by Topological Phase Transition with a Long-lived Horizon
Authors:
Meng Kang,
Huaqing Huang,
Shunping Zhang,
Hongxing Xu,
Feng Liu
Abstract:
Hawking radiation, a manifestation of quantum field theory in curved spacetime, has stimulated extensive theoretical and experimental studies of various black-hole (BH) analogs. However, an undisputed confirmation of Hawking radiation remains elusive. One challenge is BH analog structures with long-lived horizons are difficult to achieve. Here, we theoretically demonstrate a new type of optical BH…
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Hawking radiation, a manifestation of quantum field theory in curved spacetime, has stimulated extensive theoretical and experimental studies of various black-hole (BH) analogs. However, an undisputed confirmation of Hawking radiation remains elusive. One challenge is BH analog structures with long-lived horizons are difficult to achieve. Here, we theoretically demonstrate a new type of optical BH analog based on light cone evolution associated with topological phase transition of Dirac cones. The transition from a type-II to type-I Dirac/Weyl cone creates an analogous curved spacetime that crosses a type-III Dirac/Weyl cone, which affords a stationary configuration of long-lived event horizon. Photons tunneling through the horizon emit a spectrum of Hawking radiation. As an example, we design a laboratory version in an inhomogeneous two-dimensional graphyne-like topological photonic lattice with a Hawking temperature of 0.14 mK. Understanding Hawking-like radiation in this unique topological BH is not only of fundamental interest in its own right but may also provide new hints to gravitational physics.
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Submitted 19 August, 2019; v1 submitted 14 August, 2019;
originally announced August 2019.
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Dirac fermions and flat bands in the ideal kagome metal FeSn
Authors:
Mingu Kang,
Linda Ye,
Shiang Fang,
Jhih-Shih You,
Abe Levitan,
Minyong Han,
Jorge I. Facio,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Mun K. Chan,
Ross D. McDonald,
David Graf,
Konstantine Kaznatcheev,
Elio Vescovo,
David C. Bell,
Efthimios Kaxiras,
Jeroen van den Brink,
Manuel Richter,
Madhav Prasad Ghimire,
Joseph G. Checkelsky,
Riccardo Comin
Abstract:
The kagome lattice based on 3d transition metals is a versatile platform for novel topological phases hosting symmetry-protected electronic excitations and exotic magnetic ground states. However, the paradigmatic states of the idealized two-dimensional (2D) kagome lattice - Dirac fermions and topological flat bands - have not been simultaneously observed, partly owing to the complex stacking struc…
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The kagome lattice based on 3d transition metals is a versatile platform for novel topological phases hosting symmetry-protected electronic excitations and exotic magnetic ground states. However, the paradigmatic states of the idealized two-dimensional (2D) kagome lattice - Dirac fermions and topological flat bands - have not been simultaneously observed, partly owing to the complex stacking structure of the kagome compounds studied to date. Here, we take the approach of examining FeSn, an antiferromagnetic single-layer kagome metal with spatially-decoupled kagome planes. Using polarization- and termination-dependent angle-resolved photoemission spectroscopy (ARPES), we detect the momentum-space signatures of coexisting flat bands and Dirac fermions in the vicinity of the Fermi energy. Intriguingly, when complemented with bulk-sensitive de Haas-van Alphen (dHvA) measurements, our data reveal an even richer electronic structure that exhibits robust surface Dirac fermions on specific crystalline terminations. Through band structure calculations and matrix element simulations, we demonstrate that the bulk Dirac bands arise from in-plane localized Fe-3d orbitals under kagome symmetry, while the surface state realizes a rare example of fully spin-polarized 2D Dirac fermions when combined with spin-layer locking in FeSn. These results highlight FeSn as a prototypical host for the emergent excitations of the kagome lattice. The prospect to harness these excitations for novel topological phases and spintronic devices is a frontier of great promise at the confluence of topology, magnetism, and strongly-correlated electron physics.
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Submitted 5 June, 2019;
originally announced June 2019.