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Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry
Authors:
Ami M. Shirai,
Yuta Murotani,
Tomohiro Fujimoto,
Natsuki Kanda,
Jun Yoshinobu,
Ryusuke Matsunaga
Abstract:
Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature. Linearly polarized pump pulses excite electrons and holes with asymmetric distributions in momentum space, leading to in-plane anisotropic conductivity. By varyi…
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Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature. Linearly polarized pump pulses excite electrons and holes with asymmetric distributions in momentum space, leading to in-plane anisotropic conductivity. By varying the polarization directions of the pump light relative to the in-plane crystalline axes, the valley polarization of electrons and the momentum asymmetry of holes are separately probed through observing the polarization rotation of THz pulses. We demonstrate that the valley relaxation time of electrons near the conduction band minimum exceeds 1.5 ps at room temperature, in good agreement with theoretically calculated intervalley phonon scattering with f process. This work paves the way for Si-based room-temperature valleytronics.
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Submitted 5 March, 2025; v1 submitted 19 December, 2024;
originally announced December 2024.
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Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis
Authors:
Tomohiro Fujimoto,
Yuta Murotani,
Tomohiro Tamaya,
Takayuki Kurihara,
Natsuki Kanda,
Changsu Kim,
Jun Yoshinobu,
Hidefumi Akiyama,
Takeo Kato,
Ryusuke Matsunaga
Abstract:
The electromotive force transverse to a bias field under irradiation of circularly polarized light, namely the photovoltaic Hall response or light-induced anomalous Hall effect, has attracted considerable attention to investigate the topologically nontrivial states in Floquet engineering and the inverse spin Hall effect of spin-polarized carriers in spintronics. However, taking into account invers…
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The electromotive force transverse to a bias field under irradiation of circularly polarized light, namely the photovoltaic Hall response or light-induced anomalous Hall effect, has attracted considerable attention to investigate the topologically nontrivial states in Floquet engineering and the inverse spin Hall effect of spin-polarized carriers in spintronics. However, taking into account inversion symmetry breaking by the bias field, the circularly polarized light can excite photocarriers with asymmetric momentum distribution, which generates injection current transverse to the bias field. Therefore, the field-induced circular photogalvanic effect (FI-CPGE) should also emerge in the very same experimental configuration for light-induced anomalous Hall effect but has been overlooked in literature. In this work, using terahertz pulses as a bias field for a semiconductor GaAs, we conduct two-dimensional Fourier analysis and demonstrate that FI-CPGE can play a major role in the photovoltaic Hall response. Counterintuitively, FI-CPGE is significantly enhanced when the photocarriers are excited near the bandgap with small density of states and low group velocity, which can be explained by a three-level resonant nonlinear interaction near the band degeneracy point. We also clarified that FI-CPGE would be further largely detected in the contact-type measurement using electrodes because of the absence of a filtering effect inherent to terahertz pulses. This work provides a comprehensive, generalized view of the photovoltaic Hall response in biased materials, paving a new avenue for detecting topological monopoles in momentum space hidden in equilibrium using third-order nonlinear responses.
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Submitted 23 May, 2025; v1 submitted 1 November, 2024;
originally announced November 2024.
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Emergence of high-mobility carriers in topological kagome bad metal Mn$_3$Sn by intense photoexcitation
Authors:
Takuya Matsuda,
Tomoya Higo,
Kenta Kuroda,
Takashi Koretsune,
Natsuki Kanda,
Yoshua Hirai,
Hanyi Peng,
Takumi Matsuo,
Cedric Bareille,
Andrey Varykhalov,
Naotaka Yoshikawa,
Jun Yoshinobu,
Takeshi Kondo,
Ryo Shimano,
Satoru Nakatsuji,
Ryusuke Matsunaga
Abstract:
Kagome-lattice materials offer novel playgrounds of exploring topologically nontrivial states of electrons under influence of many-body interactions. A noncollinear kagome antiferromagnet Mn$_3$Sn has attracted particular interest for application in spintronics owing to the large anomalous Hall effect related to the Weyl dispersion near the Fermi energy. In addition, strong electronic correlation…
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Kagome-lattice materials offer novel playgrounds of exploring topologically nontrivial states of electrons under influence of many-body interactions. A noncollinear kagome antiferromagnet Mn$_3$Sn has attracted particular interest for application in spintronics owing to the large anomalous Hall effect related to the Weyl dispersion near the Fermi energy. In addition, strong electronic correlation suggesting the Kondo physics has also been implied. However, the effect of correlation on the band topology and their interplay remains elusive. Here, we investigate nonequilibrium Hall transport in a photoexcited Mn$_3$Sn using time-resolved terahertz Faraday rotation spectroscopy. In equilibrium, Mn$_3$Sn is a bad metal close to the Mott-Ioffe-Regal limit with low carrier mobility, and thus only the anomalous Hall effect is discerned. By contrast, intense photoexcitation beyond an approximate threshold gives rise to a clear cyclotron resonance, namely the normal Hall effect, indicating the emergence of unusual carriers with 50 times lighter effective mass and 40 times less scattering. The lifetime of high-mobility carriers as long as a few tens of picoseconds and a threshold-like behavior for the pump fluence are hardly explained by contribution of photoexcited hot carriers. Instead, the emergence of unusual carriers may be accounted for by dielectric screening of the on-site Coulomb interaction by high-density delocalized photocarriers. A possible role of electronic correlation in equilibrium transport in Mn$_3$Sn beyond the single-particle picture is discussed.
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Submitted 13 November, 2024; v1 submitted 20 November, 2023;
originally announced November 2023.
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Anomalous Hall transport by optically injected isospin degree of freedom in Dirac semimetal thin film
Authors:
Yuta Murotani,
Natsuki Kanda,
Tomohiro Fujimoto,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Takashi Oka,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels th…
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Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels the chirality of massless carriers from a crystallographic point of view, can be injected by circularly polarized light. Terahertz Faraday rotation spectroscopy successfully detects the anomalous Hall conductivity by a light-induced isospin polarization in a three-dimensional Dirac semimetal, Cd$_3$As$_2$. Spectral analysis of the Hall conductivity reveals a long scattering time and a long decay time, which are characteristic of the isospin. The long-lived, robust, and reversible character of the isospin promises potential application of Dirac semimetals in future information technology.
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Submitted 4 January, 2024; v1 submitted 2 October, 2023;
originally announced October 2023.
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Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection
Authors:
Tomohiro Fujimoto,
Takayuki Kurihara,
Yuta Murotani,
Tomohiro Tamaya,
Natsuki Kanda,
Changsu Kim,
Jun Yoshinobu,
Hidefumi Akiyama,
Takeo Kato,
Ryusuke Matsunaga
Abstract:
We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with the…
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We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.
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Submitted 9 January, 2024; v1 submitted 16 May, 2023;
originally announced May 2023.
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Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal
Authors:
Yuta Murotani,
Natsuki Kanda,
Tomohiro Fujimoto,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Takashi Oka,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted b…
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We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field. The contribution from the Floquet-Weyl nodes is found to be minor when the driving light is in resonance with interband transitions. We develop a generally applicable classification of microscopic mechanisms of light-induced anomalous Hall conductivity.
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Submitted 30 August, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
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Ultrafast Dynamics of Intrinsic Anomalous Hall Effect in the Topological Antiferromagnet Mn3Sn
Authors:
Takuya Matsuda,
Tomoya Higo,
Takashi Koretsune,
Natsuki Kanda,
Yoshua Hirai,
Hanyi Peng,
Takumi Matsuo,
Naotaka Yoshikawa,
Ryo Shimano,
Satoru Nakatsuji,
Ryusuke Matsunaga
Abstract:
We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz probe pulses clearly resolves ultrafast suppression of the AHE before demagnetization. The result is well reproduced by microscopic calculation of the intrinsic Be…
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We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz probe pulses clearly resolves ultrafast suppression of the AHE before demagnetization. The result is well reproduced by microscopic calculation of the intrinsic Berry-curvature mechanism while the extrinsic contribution is clearly excluded. Our work opens a new avenue for the study of nonequilibrium AHE to identify the microscopic origin by drastic control of the electron temperature by light.
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Submitted 21 March, 2023; v1 submitted 14 June, 2022;
originally announced June 2022.
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Stimulated Rayleigh Scattering Enhanced by a Longitudinal Plasma Mode in a Periodically Driven Dirac Semimetal Cd$_3$As$_2$
Authors:
Yuta Murotani,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
Using broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive lineshape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the lo…
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Using broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive lineshape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the longitudinal plasma mode. Stimulated Rayleigh scattering with an unprecedentedly large refractive index change may pave the way for slow light generation in conductive solids at room temperature.
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Submitted 11 November, 2022; v1 submitted 24 December, 2021;
originally announced December 2021.
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Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal Cd$_3$As$_2$ thin film
Authors:
Natsuki Kanda,
Yuta Murotani,
Takuya Matsuda,
Manik Goyal,
Salva Salmani-Rezaie,
Jun Yoshinobu,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynami…
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The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal Cd$_3$As$_2$ by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 $μ$m), which covers the crossover between the inter and intraband response. We resolve dynamics of the photoexcited nonthermal electrons which merge with originally existing carriers to form a single thermalized electron gas and how it is facilitated by high-density excitation. We also demonstrate that a large reduction of the refractive index by 80% dominates the nonequilibrium infrared response, which can be utilized for designing ultrafast switches in active optoelectronics.
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Submitted 26 March, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
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Efficient Growth and Characterization of One Dimensional Transition Metal Tellurides Inside Carbon Nanotubes
Authors:
Naoyuki Kanda,
Yusuke Nakanishi,
Dan Liu,
Zheng Liu,
Tsukasa Inoue,
Yasumitsu Miyata,
David Tomanek,
Hisanori Shinohara
Abstract:
Atomically thin one dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synth…
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Atomically thin one dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe2, and limits access to a variety of TMMs. Here we report an expanded framework for high yield synthesis of the 1D tellurides including WTe, an unprecedented family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.
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Submitted 22 May, 2020;
originally announced May 2020.
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Room-Temperature Terahertz Anomalous Hall Effect in Weyl Antiferromagnet Mn$_3$Sn Thin Films
Authors:
Takuya Matsuda,
Natsuki Kanda,
Tomoya Higo,
N. P. Armitage,
Satoru Nakatsuji,
Ryusuke Matsunaga
Abstract:
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such larg…
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Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn$_3$Sn thin films is investigated by polarization-resolved spectroscopy. Large anomalous Hall conductivity Re $σ_{xy} (ω) \sim$ 20 $\rm{Ω^{-1} cm^{-1}}$ at THz frequencies is clearly observed as polarization rotation. In contrast, Im $σ_{xy} (ω)$ is small up to a few THz, showing that the AHE remains dissipationless over a large frequency range. A peculiar temperature dependence corresponding to the breaking/recovery of symmetry in the spin texture is also discussed. Observation of the THz AHE at room temperature demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn$_3$Sn and will also open new avenue for studying nonequilibrium dynamics in Weyl antiferromagnets.
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Submitted 10 March, 2020; v1 submitted 29 December, 2019;
originally announced December 2019.
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Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd3As2
Authors:
Bing Cheng,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Peiyu Xia,
Timo Schumann,
Susanne Stemmer,
Jiro Itatani,
N. P. Armitage,
Ryusuke Matsunaga
Abstract:
We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahe…
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We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahertz spectroscopy and calculations also clarify the microscopic mechanism of the nonlinearity originating in the coherent acceleration of Dirac electrons in momentum space. Our results provide clear insights for nonlinear current of Dirac electrons driven by terahertz field under an influence of scattering, paving the way toward novel devices for high-speed electronics and photonics based on topological semimetals.
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Submitted 24 March, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Optical control of magnetization of micron-size domains in antiferromagnetic NiO single crystals
Authors:
Takuya Higuchi,
Natsuki Kanda,
Hiroharu Tamaru,
Makoto Kuwata-Gonokami
Abstract:
We propose Raman-induced collinear difference-frequency generation (DFG) as a method to manipulate dynamical magnetization. When a fundamental beam propagates along a threefold rotational axis, this coherent second-order optical process is permitted by angular momentum conservation through the rotational analogue of the Umklapp process. As a demonstration, we experimentally obtained polarization p…
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We propose Raman-induced collinear difference-frequency generation (DFG) as a method to manipulate dynamical magnetization. When a fundamental beam propagates along a threefold rotational axis, this coherent second-order optical process is permitted by angular momentum conservation through the rotational analogue of the Umklapp process. As a demonstration, we experimentally obtained polarization properties of collinear magnetic DFG along a [111] axis of a single crystal of antiferromagnetic NiO with micro multidomain structure, which excellently agreed with the theoretical prediction.
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Submitted 1 November, 2010;
originally announced November 2010.
