Showing 1–10 of 10 results for author: Kan, C

Coulomb potential screening via charged carriers and charge-neutral dipoles/excitons in two-dimensional case

Authors: Ke Xiao, Chi-Ming Kan, Stuart. S. P. Parkin, Xiaodong Cui

Abstract: With the shrinking of dimensionality, Coulomb interactions play a distinct role in two-dimensional (2D) semiconductors owing to the reduced dielectric screening in the out-of-plane direction. Apart from dielectric screening, free charge carriers and/or dipoles can also make a non-negligible contribution to Coulomb interaction. While the Thomas-Fermi model is effective in describing charge carrier… ▽ More With the shrinking of dimensionality, Coulomb interactions play a distinct role in two-dimensional (2D) semiconductors owing to the reduced dielectric screening in the out-of-plane direction. Apart from dielectric screening, free charge carriers and/or dipoles can also make a non-negligible contribution to Coulomb interaction. While the Thomas-Fermi model is effective in describing charge carrier screening in three dimensions, the extent of screening to two dimensions resulting from charge carriers and charge-neutral dipoles remains quantitatively unclear. Herein, we present an analytical solution based on linear response theory, offering a comprehensive depiction of the Coulomb screened potential in both 2D and 3D systems, where screening effects from both charge carriers and charge-neutral dipoles are addressed. Our work provides a useful and handy tool for directly analysing and evaluating Coulomb interaction strength in atomically thin materials, particularly in the context of electronic and optoelectronic engineering. As a demonstration, we utilized the derived modified Coulomb potential for the exciton system in 2D semiconductors to estimate the exciton binding energy variation arising from the exciton density fluctuation and temperature-dependent exciton polarizability, yielding excellent agreement with the computational and experimental findings. △ Less

Submitted 12 August, 2024; v1 submitted 25 September, 2023; originally announced September 2023.

Many-body effect in optical properties of monolayer molybdenum diselenide

Authors: Ke Xiao, Tengfei Yan, Qiye Liu, Siyuan Yang, Chiming Kan, Ruihuan Duan, Zheng Liu, Xiaodong Cui

Abstract: Excitons in monolayer transition metal dichalcogenide (TMD) provide a paradigm of composite Boson in 2D system. This letter reports a photoluminescence and reflectance study of excitons in monolayer molybdenum diselenide (MoSe2) with electrostatic gating. We observe the repulsive and attractive Fermi polaron modes of the band edge exciton, its excited state and the spin-off excitons. Our data vali… ▽ More Excitons in monolayer transition metal dichalcogenide (TMD) provide a paradigm of composite Boson in 2D system. This letter reports a photoluminescence and reflectance study of excitons in monolayer molybdenum diselenide (MoSe2) with electrostatic gating. We observe the repulsive and attractive Fermi polaron modes of the band edge exciton, its excited state and the spin-off excitons. Our data validate the polaronic behavior of excitonic states in the system quantitatively where the simple three-particle trion model is insufficient to explain. △ Less

Submitted 24 August, 2020; originally announced August 2020.

Disorder suppressed charge-density-wave and its origin in 1T-TaSe2-xTex

Authors: Y. Liu, D. F. Shao, W. J. Lu, L. J. Li, H. Y. Lv, X. D. Zhu, S. G. Tan, B. Yuan, L. Zu, X. C. Kan, W. H. Song, Y. P. Sun

Abstract: In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, si… ▽ More In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, similar to 1\emph{T}-TaSe$_2$ and 1\emph{T}-TaTe$_2$, the hypothetic 1\emph{T}-TaSeTe with ordered Se/Ta/Te stacking shows instability in the phonon dispersion, indicating the presence of CDW in the ideally ordered sample. The contradictory between experimental and theoretical results suggests that the CDW is suppressed by disorder in 1\emph{T}-TaSe$_{2-x}$Te$_x$. The formation and suppression of CDW are found to be independent with Fermi surface nesting based on the generated electron susceptibility calculations. The calculation of phonon linewidth suggests the strong \textbf{\emph{q}}-dependent electron-phonon coupling induced period-lattice-distortion (PLD) should be related to our observation: The doping can largely distort the TaX$_6$ (X = Se, Te) octahedra, which are disorderly distributed. The resulted puckered Ta-Ta layers are not compatible with the two-dimensional PLD. Therefore, CDW is suppressed in 1\emph{T}-TaSe$_{2-x}$Te$_x$. Our results offer an indirect evidence that PLD, which can be influenced by strong disorder, is the origin of CDW in the system. △ Less

Submitted 20 May, 2015; v1 submitted 14 December, 2014; originally announced December 2014.

Journal ref: Physical Review B 94, 045131 (2016)

On the Possibility of an Electronic-structure Modulation Transistor

Authors: Hassan Raza, Tehseen Z. Raza, Tuo-Hung Hou, Edwin C. kan

Abstract: We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predi… ▽ More We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state. △ Less

Submitted 24 February, 2009; v1 submitted 30 November, 2008; originally announced December 2008.

Strain and field modulation in bilayer graphene band structure

Authors: Hassan Raza, Edwin C. Kan

Abstract: Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer distance results in higher bandgap modulation, as expected. Furthermore, above about 2.5 angstrom interlayer distance, the bandgap is direct, follows a conve… ▽ More Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer distance results in higher bandgap modulation, as expected. Furthermore, above about 2.5 angstrom interlayer distance, the bandgap is direct, follows a convex relation to electric field and saturates to a value determined by the interlayer distance. However, below about 2.5 angstrom, the bandgap is indirect, the trend becomes concave and a threshold electric field is observed, which also depends on the stacking distance. △ Less

Submitted 28 June, 2008; v1 submitted 19 June, 2008; originally announced June 2008.

Comments: 3 pages, 5 figures - v1 and v2 are the same, uploaded twice - v3, some typos fixed and a reference added

Journal ref: J. Phys.: Condens. Matter 21, 102202 (2009)

Nonvolatile memory with molecule-engineered tunneling barriers

Authors: Tuo-Hung Hou, Hassan Raza, Kamran Afshari, Daniel J. Ruebusch, Edwin C. Kan

Abstract: We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy levels to prompt resonant tunneling through SiO2 at high fields. However, this process is quenched at low fields due to HOMO-LUMO gap and large charging energy of… ▽ More We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy levels to prompt resonant tunneling through SiO2 at high fields. However, this process is quenched at low fields due to HOMO-LUMO gap and large charging energy of C60. Furthermore, we demonstrate an improvement of more than an order of magnitude in retention to program/erase time ratio for a metal nanocrystal memory. This shows promise of engineering tunnel dielectrics by integrating molecules in the future hybrid molecular-silicon electronics. △ Less

Submitted 27 March, 2008; originally announced March 2008.

Comments: to appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 92, 153109 (2008)

Electrical transport in two dimensional electron and hole gas on Si(001)-(2x1) surface

Authors: Hassan Raza, Tehseen Z. Raza, Edwin C. Kan

Abstract: Si(001)-(2$\times$1) surface is one of the many two-dimensional systems of scientific and applied interest. It has two surface state bands (1) anti-bonding pi* band, which has acceptor states and (2) bonding pi band, which has donor states. Due to its asymmetric dimer reconstruction, transport through this surface can be considered in two distinct directions, i.e. along and perpendicular to the… ▽ More Si(001)-(2$\times$1) surface is one of the many two-dimensional systems of scientific and applied interest. It has two surface state bands (1) anti-bonding pi* band, which has acceptor states and (2) bonding pi band, which has donor states. Due to its asymmetric dimer reconstruction, transport through this surface can be considered in two distinct directions, i.e. along and perpendicular to the paired dimer rows. We calculate the zero bias conductance of these surface states under flat-band condition and find that conduction along the dimer row direction is significant due to strong orbital hybridization. We also find that the surface conductance is orders of magnitude higher than the bulk conductance close to the band edges for the unpassivated surface at room temperature. Therefore, we propose that the transport through these surface states may be the dominant conduction mechanisms in the recently reported scanning tunneling microscopy of silicon nanomembranes. We also calculate the zero bias conductance under flat-band condition for the weakly interacting dangling bond wires along and perpendicular to the dimer row direction and find similar trends. Extended Huckel theory is used for the electronic structure calculations, which is benchmarked with the GW approximation for Si and has been successfully applied to Si systems in past. △ Less

Submitted 14 September, 2008; v1 submitted 11 March, 2008; originally announced March 2008.

Journal ref: Phys. Rev. B 78, 193401 (2008).

Armchair graphene nanoribbons: Electronic structure and electric field modulation

Authors: Hassan Raza, Edwin C. Kan

Abstract: We report electronic structure and electric field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semi-empirical extended Huckel theory. Important band structure parameters are computed, e.g. effectives masses, velocities and bandgaps. For the three types of acGNRs, the pz orbital tight-binding parameters are extracted if feasible. Furthermore, t… ▽ More We report electronic structure and electric field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semi-empirical extended Huckel theory. Important band structure parameters are computed, e.g. effectives masses, velocities and bandgaps. For the three types of acGNRs, the pz orbital tight-binding parameters are extracted if feasible. Furthermore, the effect of electric field in the width direction on acGNRs dispersion is explored. It is shown that for the two types of semiconducting acGNRs, an external electric field can reduce the bandgap to a few meV with different quantitative behavior. △ Less

Submitted 12 May, 2008; v1 submitted 8 March, 2008; originally announced March 2008.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 77, 245434 (2008).

An atomistic quantum transport solver with dephasing for field-effect transistors

Authors: Hassan Raza, Edwin C. Kan

Abstract: Extended Huckel theory (EHT) along with NEGF (Non-equilibrium Green's function formalism) has been used for modeling coherent transport through molecules. Incorporating dephasing has been proposed to theoretically reproduce experimental characteristics for such devices. These elastic and inelastic dephasing effects are expected to be important in quantum devices with the feature size around 10nm… ▽ More Extended Huckel theory (EHT) along with NEGF (Non-equilibrium Green's function formalism) has been used for modeling coherent transport through molecules. Incorporating dephasing has been proposed to theoretically reproduce experimental characteristics for such devices. These elastic and inelastic dephasing effects are expected to be important in quantum devices with the feature size around 10nm, and hence an efficient and versatile solver is needed. This model should have flexibility to be applied to a wide range of nano-scale devices, along with 3D electrostatics, for arbitrary shaped contacts and surface roughness. We report one such EHT-NEGF solver with dephasing by self-consistent Born approximation (SCBA). 3D electrostatics is included using a finite-element scheme. The model is applied to a single wall carbon nanotube (CNT) cross-bar structure with a C60 molecule as the active channel. Without dephasing, a negative differential resistance (NDR) peak appears when the C60 lowest unoccupied molecular orbital level crosses a van Hove singularity in the 1D density of states of the metallic CNTs acting as contacts. This NDR diminishes with increasing dephasing in the channel as expected. △ Less

Submitted 16 February, 2008; originally announced February 2008.

Comments: to appear in Journal of Computational Electronics

Journal ref: J. Comp. Elec. 7, 423 (2008).

An Extended Huckel Theory based Atomistic Model for Graphene Nanoelectronics

Authors: Hassan Raza, Edwin C. Kan

Abstract: An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons (GNR) with and without hydrogen passivation, as well as for bilayer graphene. Further calculations are presented for electric fields in the nano-ribbon width dir… ▽ More An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons (GNR) with and without hydrogen passivation, as well as for bilayer graphene. Further calculations are presented for electric fields in the nano-ribbon width direction and in the bilayer direction to show electronic structure modification. Finally, the EHT Hamiltonian and NEGF (Nonequilibrium Green's function) formalism are used for a paramagnetic zigzag GNR to show 2e2/h quantum conductance. △ Less

Submitted 7 January, 2008; originally announced January 2008.

Comments: 5 pages, 8 figures

Journal ref: J. Comp. Elec. 7, 372 (2008).