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Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures
Authors:
T. Schumann,
T. Kleinke,
L. Braun,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
K. Olejník,
H. Reichlová,
C. Heiliger,
C. Denker,
J. Walowski,
T. Kampfrath,
M. Münzenberg
Abstract:
We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment…
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We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.
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Submitted 3 February, 2022;
originally announced February 2022.
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Thickness dependence of electron-electron interactions in topological p-n junctions
Authors:
Dirk Backes,
Danhong Huang,
Rhodri Mansell,
Martin Lanius,
Jörn Kampmeier,
David Ritchie,
Gregor Mussler,
Godfrey Gumbs,
Detlev Grützmacher,
Vijay Narayan
Abstract:
Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a find…
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Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.
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Submitted 12 December, 2018;
originally announced December 2018.
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Observation of spin Nernst photocurrents in topological insulators
Authors:
T. Schumann,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
L. Braun,
T. Kampfrath,
J. Walowski,
M. Münzenberg
Abstract:
The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bu…
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The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bunches spin-current sources for the generation of THz radiation. On the other hand, those spin-polarized surface-state currents when generated by a voltage lead to large spin Hall effects, or when generated by a temperature gradient to the thermal analogue, the spin Nernst effect. Both mutually convert charge/ heat currents into transverse spin currents leading to spin accumulations. By connecting both research fields, we show the evidence of heat-transport related spin Hall effects that can be extracted from opto-transport experiments. This heat-driven spin Nernst effect drives a transverse spin-current and affects the optical spin-orientation in the three-dimensional topological insulator. This manifests as a modification of the circular polarization-dependent photocurrent. We illuminate the detailed thermocurrent distribution, including the influence of edges and contacts, in spatially resolved current maps.
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Submitted 30 October, 2018;
originally announced October 2018.
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Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
Authors:
H. Plank,
J. Pernul,
S. Gebert,
S. N. Danilov,
J. König-Otto,
S. Winnerl,
M. Lanius,
J. Kampmeier,
G. Mussler,
I. Aguilera,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies th…
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We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi,Sb)Te based three dimensional topological insulators. We demonstrate that in a wide range of frequencies, ranging from fractions up to tens of terahertz, the photocurrent is caused by the linear photogalvanic effect (LPGE) excited in the surface states. The photocurrent spectra reveal that at low frequencies the LPGE emerges due to free carrier Drude-like absorption. The spectra allow to determine the room temperature carrier mobilities in the surface states despite the presents of thermally activate residual impurities in the material bulk. In a number of samples we observed an enhancement of the linear photogalvanic effect at frequencies between 30÷60 THz, which is attributed to the excitation of electrons from helical surface to bulk conduction band states. Under this condition and applying oblique incidence we also observed the circular photogalvanic effect driven by the radiation helicity.
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Submitted 30 November, 2017;
originally announced November 2017.
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Opto-Electronic Characterization of Three Dimensional Topological Insulators
Authors:
Helene Plank,
Sergey N. Danilov,
Vasily V. Bel'kov,
Vadim A. Shalygin,
Jörn Kampmeier,
Martin Lanius,
Gregor Mussler,
Detlev Grützmacher,
Sergey D. Ganichev
Abstract:
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning w…
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We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.
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Submitted 12 July, 2016;
originally announced July 2016.
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Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions
Authors:
D. Backes,
D. Huang,
R. Mansell,
M. Lanius,
J. Kampmeier,
D. A. Ritchie,
G. Mussler,
G. Gumbs,
D. Grützmacher,
V. Narayan
Abstract:
By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical…
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By combining $n$-type $\mathrm{Bi_2Te_3}$ and $p$-type $\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical $\mathrm{Bi_2Te_3/Sb_2Te_3}$ heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the $\mathrm{Sb_2Te_3}$ layer we observe a change from $n$- to $p$-type behavior via a specific thickness where the Hall signal is immeasurable. Assuming that the the bulk and surface states contribute in parallel, we can calculate and reproduce the dependence of the Hall and longitudinal components of resistivity on the film thickness. This highlights the role played by the bulk conduction channels which, importantly, cannot be probed using surface sensitive spectroscopic techniques. Our calculations are then buttressed by a semi-classical Boltzmann transport theory which rigorously shows the vanishing of the Hall signal. Our results provide crucial experimental and theoretical insights into the relative roles of the surface and bulk in the vertical topological $p$-$n$ junctions.
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Submitted 18 September, 2017; v1 submitted 22 May, 2016;
originally announced May 2016.
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Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators
Authors:
H. Plank,
L. E. Golub,
S. Bauer,
V. V. Bel'kov,
T. Herrmann,
P. Olbrich,
M. Eschbach,
L. Plucinski,
J. Kampmeier,
M. Lanius,
G. Mussler,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a c…
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We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.
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Submitted 22 December, 2015;
originally announced December 2015.
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Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
Authors:
C. Weyrich,
M. Drögeler,
J. Kampmeier,
M. Eschbach,
G. Mussler,
T. Merzenich,
T. Stoica,
I. E. Batov,
J. Schubert,
L. Plucinski,
B. Beschoten,
C. M. Schneider,
C. Stampfer,
D. Grützmacher,
Th. Schäpers
Abstract:
Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the…
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Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.
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Submitted 18 October, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
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Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures
Authors:
Markus Eschbach,
Ewa Mlynczak,
Jens Kellner,
Jörn Kampmeier,
Martin Lanius,
Elmar Neumann,
Christian Weyrich,
Mathias Gehlmann,
Pika Gospodaric,
Sven Döring,
Gregor Mussler,
Nataliya Demarina,
Martina Luysberg,
Gustav Bihlmayer,
Thomas Schäpers,
Lukasz Plucinski,
Stefan Blügel,
Markus Morgenstern,
Claus M. Schneider,
Detlev Grützmacher
Abstract:
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct…
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3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.
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Submitted 9 October, 2015;
originally announced October 2015.
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Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$
Authors:
Jens Kellner,
Markus Eschbach,
Jörn Kampmeier,
Martin Lanius,
Ewa Mlynczak,
Gregor Mussler,
Bernhard Holländer,
Lukasz Plucinski,
Marcus Liebmann,
Detlev Grützmacher,
Claus M. Schneider,
Markus Morgenstern
Abstract:
In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te…
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In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level.
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Submitted 6 October, 2015; v1 submitted 15 June, 2015;
originally announced June 2015.
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Coherent ultrafast spin-dynamics probed in three dimensional topological insulators
Authors:
F. Boschini,
M. Mansurova,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
L. Braun,
F. Katmis,
J. S. Moodera,
C. Dallera,
E. Carpene,
C. Franz,
M. Czerner,
C. Heiliger,
T. Kampfrath,
M. Münzenberg
Abstract:
Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-pol…
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Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone.
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Submitted 8 June, 2015;
originally announced June 2015.
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Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators
Authors:
P. Olbrich,
L. E. Golub,
T. Herrmann,
S. N. Danilov,
H. Plank,
V. V. Bel'kov,
G. Mussler,
Ch. Weyrich,
C. M. Schneider,
J. Kampmeier,
D. Grützmacher,
L. Plucinski,
M. Eschbach,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic…
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We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.
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Submitted 28 February, 2014;
originally announced February 2014.
