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Repetitive single electron spin readout in silicon
Authors:
J. Yoneda,
K. Takeda,
A. Noiri,
T. Nakajima,
S. Li,
J. Kamioka,
T. Kodera,
S. Tarucha
Abstract:
Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum n…
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Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. However, it has remained elusive for an electron spin in silicon as it involves exquisite exposure of the system to the external circuitry for readout while maintaining the coherence and integrity of the qubit. Here we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (> 99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a new class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity.
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Submitted 25 October, 2019;
originally announced October 2019.
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A fault-tolerant addressable spin qubit in a natural silicon quantum dot
Authors:
K. Takeda,
J. Kamioka,
T. Otsuka,
J. Yoneda,
T. Nakajima,
M. R. Delbecq,
S. Amaha,
G. Allison,
T. Kodera,
S. Oda,
S. Tarucha
Abstract:
Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double q…
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Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.
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Submitted 25 February, 2016;
originally announced February 2016.
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Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
Authors:
T. Obata,
K. Takeda,
J. Kamioka,
T. Kodera,
W. M. Akhtar,
K. Sawano,
S. Oda,
Y. Shiraki,
S. Tarucha
Abstract:
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa…
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We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.
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Submitted 12 November, 2013;
originally announced November 2013.
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Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
Authors:
K. Takeda,
T. Obata,
Y. Fukuoka,
W. M. Akhtar,
J. Kamioka,
T. Kodera,
S. Oda,
S. Tarucha
Abstract:
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negativ…
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We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.
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Submitted 29 March, 2013;
originally announced April 2013.
