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Investigation of Softer Lattice Dynamics in Defect Engineered GeTe Crystals
Authors:
Saptak Majumder,
Pintu Singha,
Sharath Kumar C.,
Mayanak K. Gupta,
Dharmendra Kumar,
R. Mittal,
D. K. Shukla,
M. P Saravanan,
Deepshikha Jaiswal-Nagar,
Vinayak B. Kamble
Abstract:
In this paper, we investigated the low-temperature lattice dynamics in two GeTe crystals with varying Ge defect stoichiometry. The X-ray Diffraction (XRD) of the as-cleaved ingots indicate that the orientation is mainly along the h0l direction. From the Raman spectra, a comparison of the linewidth variation with temperature for the in-plane (E-mode) vibrations reveals a subtle enhancement around 1…
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In this paper, we investigated the low-temperature lattice dynamics in two GeTe crystals with varying Ge defect stoichiometry. The X-ray Diffraction (XRD) of the as-cleaved ingots indicate that the orientation is mainly along the h0l direction. From the Raman spectra, a comparison of the linewidth variation with temperature for the in-plane (E-mode) vibrations reveals a subtle enhancement around 170 K for the less stoichiometric crystal, depicting a more anharmonic nature, via the 4-phonon scattering processes. Furthermore, a comparison of the out-of-plane A_T^1 mode indicates a sensitivity of a weaker Raman signal ( about 239 cm -1) from disordered GeTe4 tetrahedra that has adversely affected the mode dynamics in the less stoichiometric sample (S1). However, this weaker signal is not observed for the more stoichiometric sample (S2) below 200 K. The Machine Learned Molecular Dynamics (MLMD) simulations performed to calculate the phonon spectral densities reveal that the heavier atom, Te dominate below 100 cm-1, while, the lighter Ge has more significant contribution above 100 cm-1. Thus, the change observed only in the 120 cm-1 (A_T^1) mode is justified by defects at the Ge sites. Specific heat capacity measurements are performed that show a broad hump near 14 K, when plotted as Cp/T^3 versus T indicative of a non-Debye nature. Hence, considering the two optical modes in the Raman spectra, a Debye and two-Einstein modes model is conceptualized to explain the low-temperature specific heat. These calculations reveal a softer bonding vis-a-vis lowering of Debye temperature in S1. Lower Einstein temperatures are also observed in S1, which is attributed to the easy activation of these localized modes that affect the harmonicity of the lattice. Finally, the low-temperature resistivity measurements reveal a reduction in the effective phonon frequency (w_e) through the estimation of Te.
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Submitted 15 February, 2025;
originally announced February 2025.
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Predicting the Realizable Maximum Power Factor using the Jonker and Ioffe formulation: Al-doped ZnO Triangular Microcrystals with Graphite Inclusion Case Study
Authors:
Soumya Biswas,
Keshav Dabral,
Saptak Majumder,
Rajasekar Parasuraman,
Aditya S. Dutt,
Vinayak B. Kamble
Abstract:
Among the popular TE materials, selenides and tellurides are the benchmarks of high-efficiency systems. However, for the high-temperature application (>700 K), it is required to rely on the silicides and the oxides due to their exceptional thermal stability. ZnO is among the first few oxides in the field of thermoelectricity. Al-doped ZnO is a proven material for its high-temperature thermoelectri…
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Among the popular TE materials, selenides and tellurides are the benchmarks of high-efficiency systems. However, for the high-temperature application (>700 K), it is required to rely on the silicides and the oxides due to their exceptional thermal stability. ZnO is among the first few oxides in the field of thermoelectricity. Al-doped ZnO is a proven material for its high-temperature thermoelectric applications. However, the high grain boundary resistance limits further improvement of the efficiency of this oxide. Band-engineering, band-modification is a successful approach in lowering the grain boundary resistance. The addition of graphite and graphite-based materials at the grain boundaries is shown to serve this purpose. In this work, graphite powder is added in varying proportions to Al-doped ZnO triangular microcrystals. Thus, prepared materials are characterized to confirm the formation and investigate the nature of interface, morphology, etc. TE parameters such as electrical conductivity, Seebeck coefficient, and thermal conductivity of those materials also have been measured. The theoretical calculation of TE efficiency zT often differs from the actual experimental results due to the wide range of preparation methods, leading to changes in porosity, the nature and density defects, and several other factors. In this paper, an effort has been made to estimate the maximum achievable power factor (PFmax) from the measured TE parameters of this set of samples by the Jonker and Ioffe analysis. Based on the predicted PFmax, an appropriate material composition has been identified to achieve that same. Subsequently, including the measured parameters the TE efficiency (zT) is calculated. Further, a sudden dip observed in the thermal conductivity at the high-temperature range (625 K - 1000 K) of the prepared undoped ZnO graphite composite is investigated in this paper.
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Submitted 19 September, 2024; v1 submitted 15 September, 2024;
originally announced September 2024.
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CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications
Authors:
Shivam Tyagi,
Shubham Yadav,
Vaibhav Wani,
Shivam Singh,
Soumya Biswas,
Krishna Nand Prajapati,
Vinayak B Kamble
Abstract:
Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 imp…
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Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 impurity phase. The optical properties of the films grown onto glass substrate were studied by UV-vis spectroscopy. The optical band gap calculated is 1 to 1.3 eV for indirect and direct transition in film deposited on glass substrates. The Arrhenius plots of the two films show very different thermal activations i.e. 0.088 eV for tin vacancy acceptor level close to valance band maxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2. Photoresponse was observed by illuminating the sample (Glass and alumina Substrate) using white and UV light (400 nm) for a fixed time pulses. The deposited onto Alumina substrate were found to show better photoresponse due to SnSe/SnSe2 p-n heterojunctions.
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Submitted 30 August, 2022;
originally announced August 2022.
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Coexistence of Multiple Magnetic Interactions in Oxygen Deficient V2O5 Nanoparticles
Authors:
Tathagata Sarkar,
Soumya Biswas,
Sonali Kakkar,
Appu Vengattoor Raghu,
Chandan Bera,
Vinayak B Kamble
Abstract:
This paper reports on the spin glass-like coexistence of competing magnetic orders in oxygen-deficient V2O5 nanoparticles having a broad size distribution. X-ray photoelectron spectroscopy yields the surface chemical stoichiometry of nearly V2O4.65 due to significant defect density. Temperature-dependent electrical conductivity and thermopower measurements demonstrate a polaronic conduction mechan…
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This paper reports on the spin glass-like coexistence of competing magnetic orders in oxygen-deficient V2O5 nanoparticles having a broad size distribution. X-ray photoelectron spectroscopy yields the surface chemical stoichiometry of nearly V2O4.65 due to significant defect density. Temperature-dependent electrical conductivity and thermopower measurements demonstrate a polaronic conduction mechanism with a hopping energy of about 0.112 eV. The V2O5-δ sample exhibits strong field as well as temperature-dependent magnetic behaviour when measured with a SQUID magnetometer, showing positive magnetic susceptibility across the temperature range of 2-350 K. Field-cooled and zero-field-cooled data indicate hysteresis, suggesting glassy behaviour. The formation of small polarons due to oxygen vacancy defects, compensated by V4+ charge defects, results in Magneto-Electronic Phase Separation (MEPS) and various magnetic exchanges, as predicted by first-principle calculations. This is evidenced by the strong hybridisation of V orbitals in the vicinity of vacant oxygen site. An increase in V4+ defects shows an antiferromagnetic (AFM) component. The magnetic diversity in undoped V2O4.9 originates from defect density and their random distribution, leading to MEPS. This involves localised spins in polarons and ferromagnetic (FM) clusters on a paramagnetic (PM) background, while V4+ dimers induce AFM interactions. Electron paramagnetic resonance spectra measured at different temperatures indicate a dominant paramagnetic signal at a g-value of 1.97 due to oxygen defects, with a broad FM resonance-like hump. Both signals diminish with increasing temperature. Neutron diffraction data rules out long-range magnetic ordering, reflecting the composition as V2O4.886. Despite the FM hysteresis, no long-range order is observed in ND data, consistent with the polaron cluster-like FM with MEPS nature.
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Submitted 15 September, 2024; v1 submitted 21 June, 2021;
originally announced June 2021.
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Protonic Conduction Induced Selective Room Temperature Hydrogen Response in ZnO/NiO Heterojunction Surfaces
Authors:
Kusuma Urs MB,
Vinayak B Kamble
Abstract:
In this paper we show that the ionic conduction through surface chemisorbed ambient moisture leads to the remarkably high room temperature selective response towards hydrogen gas. The surface adsorbed moisture acts as surface states and shows ionic conduction, as a result of smaller size of ZnO nanoparticles of 20 +/- 5 nm. This response is enhanced remarkably i.e. from 10% to 190% for 1200 ppm H2…
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In this paper we show that the ionic conduction through surface chemisorbed ambient moisture leads to the remarkably high room temperature selective response towards hydrogen gas. The surface adsorbed moisture acts as surface states and shows ionic conduction, as a result of smaller size of ZnO nanoparticles of 20 +/- 5 nm. This response is enhanced remarkably i.e. from 10% to 190% for 1200 ppm H2 gas when p-type NiO quasi-nanowires (width ~50 nm) are mixed with these n-type ZnO nanoparticles to form a homogenous NiO/ZnO nano-bulk p-n heterostructure. The maximum response is obtained for about 50-50 % composition of NiO/ZnO although it is of still n-type character. The dominant carrier type reversal from n to p type takes place at rather high NiO content of about 60-80% in ZnO, depicting dominating contribution of ZnO into the response. The parallel surface ionic current through chemisorbed moisture (surface states) has been identified as a primary factor for high sensitivity at room temperature. Thus, the presence of heterojunction barrier at the NiO-ZnO interface assisted with the surface ionic conductivity due to adsorbed moisture results in large, selective response to hydrogen at room temperature.
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Submitted 9 February, 2021;
originally announced February 2021.
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Metal-polymer hybrid chemiresistive sensor for low concentration fast hydrogen detection
Authors:
Christina E. Antony,
Praveen S. G.,
Adithya Jayakumar,
Gaana K.,
Akshay Yadav,
Nikhil S. Sivakumar,
Niranjan Kamath,
Suma M. N.,
Vinayak B. Kamble,
D. Jaiswal-Nagar
Abstract:
Low concentration hydrogen gas detection is of paramount importance both in space applications as well as medical applications. It is also critically important for safe handling of hydrogen below the explosive limit. Here, we report a novel hybrid Pd metal-polymer chemiresistive sensor that can sense 0.5% hydrogen ($H_2$) gas in ambient conditions of temperature and pressure with the highest repor…
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Low concentration hydrogen gas detection is of paramount importance both in space applications as well as medical applications. It is also critically important for safe handling of hydrogen below the explosive limit. Here, we report a novel hybrid Pd metal-polymer chemiresistive sensor that can sense 0.5% hydrogen ($H_2$) gas in ambient conditions of temperature and pressure with the highest reported sensitivity($\sim$30%) obtained earlier by a physical deposition technique, making it an extremely good sensor for real life low concentration hydrogen gas detection. The sensor is easy to fabricate and is also extremely cost-effective for commercial applications. The obtained hybrid chemiresistive sensor comprises palladium (Pd) nanocrystals bound by oxygen and nitrogen atoms of a stabilizer Polyvinylepyrollidone (PVP), grown on top of a selfassembled monolayer. The exceptional rise time-constant is proposed to arise from hydrogen loading at the (111) surface of the palladium nanocrystal which is a very fast process and subsequent fast diffusion of the H atoms from the surface into the bulk. An effort to increase the number of available sites by UV-ozone cleaning, resulted in a degradation of the sensing device due to the poisoning of the available sites by oxygen.
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Submitted 15 November, 2020;
originally announced November 2020.
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Thickness induced metal to insulator charge transport and unusual hydrogen response in granular palladium nanofilms
Authors:
Dharmendra K. Singh,
Praveen S. G.,
Adithya Jayakumar,
Vinayak B. Kamble,
J. Mitra,
Suma M. N,
D. Jaiswal-Nagar
Abstract:
This work reports a systematic study of the evolution of charge transport mechanism in granular ultra-thin films of palladium of thickness varying between 6nm and 2nm. While the films with thickness > 4nm exhibit metallic behaviour, that at 3nm thickness undergoes a metal-insulator transition at 19.5K. In contrast, the 2nm thick film remained insulating at all temperatures. with transport followin…
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This work reports a systematic study of the evolution of charge transport mechanism in granular ultra-thin films of palladium of thickness varying between 6nm and 2nm. While the films with thickness > 4nm exhibit metallic behaviour, that at 3nm thickness undergoes a metal-insulator transition at 19.5K. In contrast, the 2nm thick film remained insulating at all temperatures. with transport following Mott's variable range hopping. At room temperature, while the thicker film exhibit resistance decrease on H$_2$ exposure. the insulating film showed an anomalous initial resistance increase before switching to a subsequent decrease. The nanostructure dependent transport and the ensuing H$_2$ response is modeled on a percolation model, which also explores the relevance of film thickness as a macroscopic control parameter to engineer the desired system response in granular metal films.
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Submitted 10 November, 2020;
originally announced November 2020.
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Simple, Reversible Gradient Seebeck Coefficient Measurement System for 300-600K
Authors:
Soumya Biswas,
Aditya S Dutt,
Nirmal Sabastian,
Vinayak B Kamble
Abstract:
An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported instrumental designs, the system does not have a hot walled chamber and hence is much closer to real time thermoelectric applications conditions. The system cons…
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An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported instrumental designs, the system does not have a hot walled chamber and hence is much closer to real time thermoelectric applications conditions. The system consists of two brass blocks supported heaters. These heaters are placed on either side of the sample through silver caps, thus allows individual temperature control. A reversible temperature gradient is applied across the sample and the measurement is carried out in quasi-static direct current mode. Hence, a more accurate Seebeck coefficient measurement is obtained.
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Submitted 15 August, 2019;
originally announced August 2019.