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Effect of thermal fluctuations on the average shape of a graphene nanosheet suspended in a shear flow
Authors:
Simon Gravelle,
Catherine Kamal,
Lorenzo Botto
Abstract:
Graphene nanosheets display large hydrodynamic slip lengths in most solvents, and because of this, adopt a stable orientation in a shear flow instead of rotating when thermal fluctuations are negligible [Kamal et al., Nature Comm., 11.1,2020]. In this paper, we combine molecular dynamics simulations and boundary integral simulations to demonstrate that the time-averaged 'S' shape adopted by a flex…
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Graphene nanosheets display large hydrodynamic slip lengths in most solvents, and because of this, adopt a stable orientation in a shear flow instead of rotating when thermal fluctuations are negligible [Kamal et al., Nature Comm., 11.1,2020]. In this paper, we combine molecular dynamics simulations and boundary integral simulations to demonstrate that the time-averaged 'S' shape adopted by a flexible graphene nanosheet subject to moderate thermal fluctuation is comparable to the shape predicted when neglecting thermal fluctuations. The stable 'S' shape adopted by the particle results primarily from the normal hydrodynamic traction, which is sensitive to the orientation of the particle with respect to the flow direction. Our results imply that thermally-induced shape fluctuations have a relatively minor effect on the time-averaged rheology of dilute suspensions of graphene nanosheets for relatively large but finite Péclet numbers.
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Submitted 12 December, 2024;
originally announced December 2024.
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Unpinned Dirac-Fermions in Carbon-Phosphorous-Arsenic Based Ternary Monolayer
Authors:
Amrendra Kumar,
C. Kamal
Abstract:
We predict energetically and dynamically stable ternary Carbon-Phosphorous-Arsenic (CPAs2) monolayers in buckled geometric structure by employing density functional theory based calculations. We consider three different symmetric configurations, namely, inversion (i), mirror (m) and rotational (r). The low-energy dispersions in electronic band structure and density of states (DOS) around the Fermi…
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We predict energetically and dynamically stable ternary Carbon-Phosphorous-Arsenic (CPAs2) monolayers in buckled geometric structure by employing density functional theory based calculations. We consider three different symmetric configurations, namely, inversion (i), mirror (m) and rotational (r). The low-energy dispersions in electronic band structure and density of states (DOS) around the Fermi level contain two contrasting features: (a) parabolic dispersion around highly symmetric Gamma point with a step function in DOS due to nearly-free-particle-like Schroedinger-Fermions and (b) linear dispersion around highly symmetric K point with linear DOS due to massless Dirac-Fermions for i-CPAs2 monolayer. The step function in DOS is a consequence of two-dimensionality of the system in which the motion of nearly-free-particles is confined. However, a closer look at (b) reveals that the ternary monolayers possess distinct characters, namely (i) massless-gapless, (ii) slightly massive-gapped and (iii) unpinned massless-gapless Dirac-Fermions for i, m and r-CPAs2 configurations respectively. Thus, the nature of states around the Fermi level depends crucially on the symmetry of systems. In addition, we probe the influence of mechanical strain on the properties of CPAs2 monolayer. The results indicate that the characteristic dispersions of (a) and (b) move in opposite directions in energy which leads to a metal-to-semimetal transition in i and r-CPAs2 configurations, for a few percentages of tensile strain. On the other hand, a strain induced metal-to-semiconductor transition is observed in m-CPAs2 configuration with a tunable energy band gap. Interestingly, unlike graphene, the Dirac cones can be unpinned from highly symmetric K (and K') point, but they are restricted to move along the edges (K-M'-K') of first Brillouin zone due to C2 symmetry in i and r-CPAs2 configurations.
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Submitted 27 July, 2023;
originally announced July 2023.
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A-site Cation Influence on the Conduction Band of Lead Bromide Perovskites
Authors:
Gabriel J. Man,
Chinnathambi Kamal,
Aleksandr Kalinko,
Dibya Phuyal,
Joydev Acharya,
Soham Mukherjee,
Pabitra K. Nayak,
Håkan Rensmo,
Michael Odelius,
Sergei M. Butorin
Abstract:
Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band sta…
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Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band states, the σ-π energy separation, and find that it is strongly influenced by the strength of electronic coupling between the A-cation and bromide-lead sublattice. Our finding provides an alternative mechanism to the commonly discussed polaronic screening and hot phonon bottleneck carrier cooling mechanisms. Our work emphasizes the optoelectronic role of the A-cation, provides a comprehensive view of A-cation effects in the electronic and crystal structures, and outlines a broadly applicable spectroscopic approach for assessing the impact of chemical alterations of the A-cation on halide and potentially non-halide perovskite electronic structure.
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Submitted 17 September, 2021;
originally announced September 2021.
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Electronic Coupling between the Unoccupied States of the Organic and Inorganic Sub-Lattices of Methylammonium Lead Iodide a Hybrid Organic-Inorganic Perovskite Single Crystal
Authors:
Gabriel J. Man,
Cody M. Sterling,
Chinnathambi Kamal,
Konstantin A. Simonov,
Sebastian Svanström,
Joydev Acharya,
Fredrik O. L. Johansson,
Erika Giangrisostomi,
Ruslan Ovsyannikov,
Thomas Huthwelker,
Sergei M. Butorin,
Pabitra K. Nayak,
Michael Odelius,
Håkan Rensmo
Abstract:
Organic-inorganic halide perovskites have been intensively re-investigated due to their applications, yet the opto-electronic function of the organic cation remains unclear. Through organic-selective resonant Auger electron spectroscopy measurements on well-defined single crystal surfaces, we find evidence for electronic coupling in the unoccupied states between the organic and inorganic sub-latti…
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Organic-inorganic halide perovskites have been intensively re-investigated due to their applications, yet the opto-electronic function of the organic cation remains unclear. Through organic-selective resonant Auger electron spectroscopy measurements on well-defined single crystal surfaces, we find evidence for electronic coupling in the unoccupied states between the organic and inorganic sub-lattices of the prototypical hybrid perovskite, which is contrary to the notion based on previous studies that the organic cation is electronically inert. The coupling is relevant for electron dynamics in the material and for understanding opto-electronic functionality.
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Submitted 18 May, 2021; v1 submitted 3 November, 2020;
originally announced November 2020.
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Liquid exfoliation of multilayer graphene in sheared solvents: a molecular dynamics investigation
Authors:
Simon Gravelle,
Catherine Kamal,
Lorenzo Botto
Abstract:
Liquid-phase exfoliation, the use of a sheared liquid to delaminate graphite into few-layer graphene, is a promising technique for the large-scale production of graphene. But the micro and nanoscale fluid-structure processes controlling the exfoliation are not fully understood. Here we perform non-equilibrium molecular dynamics simulations of a defect-free graphite nanoplatelet suspended in a shea…
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Liquid-phase exfoliation, the use of a sheared liquid to delaminate graphite into few-layer graphene, is a promising technique for the large-scale production of graphene. But the micro and nanoscale fluid-structure processes controlling the exfoliation are not fully understood. Here we perform non-equilibrium molecular dynamics simulations of a defect-free graphite nanoplatelet suspended in a shear flow and measure the critical shear rate $\dot γ_c$ needed for the exfoliation to occur. We compare $\dot γ_c$ for different solvents including water and NMP, and nanoplatelets of different lengths. Using a theoretical model based on a balance between the work done by viscous shearing forces and the change in interfacial energies upon layer sliding, we are able to predict the critical shear rates $\dot γ_c$ measured in simulations. We find that an accurate prediction of the exfoliation of short graphite nanoplatelets is possible only if both hydrodynamic slip and the fluid forces on the graphene edges are considered, and if an accurate value of the solid-liquid surface energy is used. The commonly used "geometric-mean" approximation for the solid-liquid energy leads to grossly incorrect predictions.
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Submitted 6 December, 2019;
originally announced December 2019.
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Massless Dirac-Fermions in Stable Two-Dimensional Carbon-Arsenic Monolayer
Authors:
C. Kamal
Abstract:
We predict from DFT based electronic structure calculations that a monolayer made up of Carbon and Arsenic atoms, with a chemical composition (CAs3) forms an energetically and dynamically stable system. The optimized geometry of the monolayer is slightly different from the buckled geometric configuration observed for silicene and germanene. The results of electronic structure calculations predict…
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We predict from DFT based electronic structure calculations that a monolayer made up of Carbon and Arsenic atoms, with a chemical composition (CAs3) forms an energetically and dynamically stable system. The optimized geometry of the monolayer is slightly different from the buckled geometric configuration observed for silicene and germanene. The results of electronic structure calculations predict that it is a semi-metal. Interestingly, the electronic band structure of this material possesses a linear dispersion and a Dirac cone at the Fermi level around the high symmetric K point in the reciprocal lattice. Thus, at low energy excitation (up to 105 meV), the charge carriers in this system behave as massless Dirac-Fermions. Detailed analysis of partial density of state suggests that the 2pz orbital of C atoms plays vital role in determining the nature of the states, which has a linear dispersion and hence the Dirac cone, around the Fermi level. Thus, the electronic properties of CAs3 monolayer are similar to those of graphene and other group IV based monolayers. In addition, we have also investigated the influence of mechanical strain on the properties of CAs3 monolayer. The buckled configuration becomes the planar configuration for a tensile strain beyond 18%. Our results indicate that the monolayer possesses linear dispersion in the electronic band structure for a wide range of mechanical strain from -12 to 20%, though the position of Dirac point may not lie exactly at the Fermi level. The linear dispersion disappears for a compressive strain beyond -12% & it is due to the drastic changes in the geometrical environment around C atom. Finally, we wish to point out that CAs3 monolayer belongs to the class of Dirac materials where the behaviour of particles, at low energy excitations, are characterized by the Dirac-like Hamiltonian rather than the Schrodinger Hamiltonian.
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Submitted 3 April, 2019;
originally announced April 2019.
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An experimental and Ab-initio study of Electronic and Magnetic properties of FeGa3
Authors:
Debashis Mondal,
Soma Banik,
C. Kamal,
Parasmani Rajput,
Arumugam Thamizhavel,
A. Banerjee,
Aparna Chakrabarti,
Tapas Ganguli
Abstract:
Electronic structure of FeGa3 has been studied using experiments and ab-initio calculations. Magnetization measurements show that FeGa3 is inherently diamagnetic in nature. Our studies indicate that the previously reported magnetic moment on the Fe atoms in FeGa3 is not an intrinsic property of FeGa3, but is primarily due to the presence of disorder, defects, grain boundaries etc that break the sy…
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Electronic structure of FeGa3 has been studied using experiments and ab-initio calculations. Magnetization measurements show that FeGa3 is inherently diamagnetic in nature. Our studies indicate that the previously reported magnetic moment on the Fe atoms in FeGa3 is not an intrinsic property of FeGa3, but is primarily due to the presence of disorder, defects, grain boundaries etc that break the symmetry about the Fe dimers. Analysis of the results obtained from magnetic measurements, photoelectron spectroscopy, Fe K-edge X-ray absorption near edge spectroscopy and ab-initio calculations clearly indicates that, the effects of on-site Coulomb repulsion between the Fe 3d electrons do not play any role in determining the electronic and magnetic properties of FeGa3. Detailed analysis of results of single crystal and poycrystalline FeGa3, helps to resolve the discrepancy in the electronic and magnetic properties in FeGa3 existing in the literature, consistently.
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Submitted 18 March, 2018;
originally announced March 2018.
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High pressure studies on properties of FeGa3: role of on-site coulomb correlation
Authors:
Debashis Mondal,
Velaga Srihari,
C. Kamal,
Himanshu Poswal,
Alka B. Garg,
Arumugam Thamizhavel,
Soma Banik,
Aparna Chakrabarti,
Tapas Ganguli,
Surinder M. Sharma
Abstract:
High pressure X-ray diffraction measurements have been carried out on the intermetallic semiconductor FeGa$_3$ and the equation of state for FeGa$_3$ has been determined. First principles based DFT calculations within the GGA approximation indicate that although the unit cell volume matches well with the experimentally obtained value at ambient pressure, it is significantly underestimated at high…
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High pressure X-ray diffraction measurements have been carried out on the intermetallic semiconductor FeGa$_3$ and the equation of state for FeGa$_3$ has been determined. First principles based DFT calculations within the GGA approximation indicate that although the unit cell volume matches well with the experimentally obtained value at ambient pressure, it is significantly underestimated at high pressures and the difference between them increases as pressure increases. GGA + U calculations with increasing values of U$_{Fe(3d)}$ (on-site Coulomb repulsion between the Fe 3d electrons) at high pressures, correct this discrepancy. Further, the GGA+U calculations also show that along with U$_{Fe(3d)}$, the Fe 3d band width also increases with pressure and around a pressure of 4 GPa, a small density of states appear at the Fermi level. High pressure resistance measurements carried out on FeGa$_3$ also clearly show a signature of an electronic transition. Beyond the pressure of 19.7 GPa, the diffraction peaks reduce in intensity and are not observable beyond $\sim$ 26 GPa, leading to an amorphous state.
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Submitted 30 January, 2017; v1 submitted 11 July, 2016;
originally announced July 2016.
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Structural and electronic properties of Fe(AlxGa1-x)3 system
Authors:
Debashis Mondal,
C. Kamal,
Soma Banik,
Ashok Bhakar,
Ajay Kak,
Gangadhar Das,
V. R. Reddy,
Aparna Chakrabarti,
Tapas Ganguli
Abstract:
FeGa3 is a well known d-p hybridization induced intermetallic bandgap semiconductor. In this work, we present the experimental and theoretical results on the effect of Al substitution in FeGa3, obtained by x-ray diffraction (XRD), temperature dependent resistance measurement, room temperature Mossbauer measurements and density functional theory based electronic structure calculations. It is observ…
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FeGa3 is a well known d-p hybridization induced intermetallic bandgap semiconductor. In this work, we present the experimental and theoretical results on the effect of Al substitution in FeGa3, obtained by x-ray diffraction (XRD), temperature dependent resistance measurement, room temperature Mossbauer measurements and density functional theory based electronic structure calculations. It is observed that upto x = 0.178 in Fe(AlxGa1-x)3, which is the maximum range studied in this work, Al substitution reduces the lattice parameters 'a' and 'c' preserving the parent tetragonal P42/mnm crystal structure of FeGa3. The bandgap of Fe(AlxGa1-x)3 for x = 0.178 is reduced by ~ 24% as compared to FeGa3. Rietveld refinement of the XRD data shows that the Al atoms replace Ga atoms located at the 8j sites in FeGa3. A comparison of the trends of the lattice parameters and energy bandgap observed in the calculations and the experiments also confirms that Al primarily replaces the Ga atoms in the 8j site.
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Submitted 14 June, 2016;
originally announced June 2016.
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Electronic Structure of FeAl Alloy Studied by Resonant Photoemission Spectroscopy and Ab Initio Calculations
Authors:
Debashis Mondal,
Soma Banik,
C. Kamal,
Mangla Nand,
S. N. Jha,
D. M. Phase,
A. K. Sinha,
Aparna Chakrabarti,
A. Banerjee,
Tapas Ganguli
Abstract:
Resonant photoemission spectroscopy has been used to investigate the character of Fe 3d states in FeAl alloy. Fe 3d states have two different character, first is of itinerant nature located very close to the Fermi level, and second, is of less itinerant (relatively localized character), located beyond 2 eV below the Fermi level. These distinct states are clearly distinguishable in the resonant pho…
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Resonant photoemission spectroscopy has been used to investigate the character of Fe 3d states in FeAl alloy. Fe 3d states have two different character, first is of itinerant nature located very close to the Fermi level, and second, is of less itinerant (relatively localized character), located beyond 2 eV below the Fermi level. These distinct states are clearly distinguishable in the resonant photoemission data. Comparison between the results obtained from experiments and first principle based electronic structure calculation show that the origin of the itinerant character of the Fe 3d states is due to the ordered B2 structure, whereas the relatively less itinerant (localized) Fe 3d states are from the disorders present in the sample. The exchange splitting of the Fe 3s core level peak confirms the presence of local moment in this system. It is found that the itinerant electrons arise due to the hybridization between Fe 3d and Al 3s-3p states. Presence of hybridization is observed as a shift in the Al 2p core-level spectra as well as in the X-ray near edge absorption spectra towards lower binding energy. Our photoemission results are thus explained by the co-existence of ordered and disordered phases in the system.
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Submitted 23 May, 2016;
originally announced May 2016.
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Direct Band Gaps in Group IV-VI Monolayer Materials: Binary Counterparts of Phosphorene
Authors:
C. Kamal,
Aparna Chakrabarti,
Motohiko Ezawa
Abstract:
We perform systematic investigation on the geometric, energetic and electronic properties of group IV-VI binary monolayers (XY), which are the counterparts of phosphorene, by employing density functional theory based electronic structure calculations. For this purpose, we choose the binary systems XY consisting of equal numbers of group IV (X = C, Si, Ge, Sn) and group VI elements (Y = O, S, Se, T…
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We perform systematic investigation on the geometric, energetic and electronic properties of group IV-VI binary monolayers (XY), which are the counterparts of phosphorene, by employing density functional theory based electronic structure calculations. For this purpose, we choose the binary systems XY consisting of equal numbers of group IV (X = C, Si, Ge, Sn) and group VI elements (Y = O, S, Se, Te) in three geometrical configurations, the puckered, buckled and planar structures. The results of binding energy calculations show that all the binary systems studied are energetically stable. It is observed that, the puckered structure, similar to that of phosphorene, is the energetically most stable geometric configuration. Our results of electronic band structure predict that puckered SiO and CSe are direct band semiconductors with gaps of 1.449 and 0.905 eV, respectively. Band structure of CSe closely resembles that of phosphorene. Remaining group IV-VI binary monolayers in the puckered configuration and all the buckled monolayers are also semiconductors, but with indirect band gaps. Importantly, we find that the difference between indirect and direct band gaps is very small for many puckered monolayers. Thus, there is a possibility of making these systems undergo transition from indirect to direct band gap semiconducting state by a suitable external influence. Indeed, we show in the present work that seven binary monolayers namely SnS, SiSe, GeSe, SnSe, SiTe, GeTe and SnTe become direct band gap semiconductors when they are subjected to a small mechanical strain (<= 3 %). This makes nine out of sixteen binary monolayers studied in the present work direct band gap semiconductors. Thus, there is a possibility of utilizing these binary counterparts of phosphorene in future light-emitting diodes and solar cells.
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Submitted 7 March, 2016; v1 submitted 23 December, 2015;
originally announced December 2015.
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Aluminene as Highly Hole Doped Graphene
Authors:
C. Kamal,
Aparna Chakrabarti,
Motohiko Ezawa
Abstract:
Monolayer structures made up of purely one kind of atoms are fascinating. Many kinds of honeycomb systems including carbon, silicon, germanium, tin, phosphorus and arsenic have been shown to be stable. However, so far the structures are restricted to group IV and V elements. In this letter, we systematically investigate the stability of monolayer structures made up of aluminium, in four different…
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Monolayer structures made up of purely one kind of atoms are fascinating. Many kinds of honeycomb systems including carbon, silicon, germanium, tin, phosphorus and arsenic have been shown to be stable. However, so far the structures are restricted to group IV and V elements. In this letter, we systematically investigate the stability of monolayer structures made up of aluminium, in four different geometric configurations (planar, buckled, puckered and triangular), by employing density functional theory based electronic structure calculation. Our results on cohesive energy and phonon dispersion predict that only planar honeycomb structure made up of aluminium is stable. We call it "aluminene" according to the standard naming convention. It is a metal. Results of electronic band structure suggest that it may be regarded as a highly hole doped graphene. We also present the tight-binding model and the Dirac theory to discuss the electronic properties of aluminene.
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Submitted 20 February, 2015;
originally announced February 2015.
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Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
Authors:
C. Kamal,
Motohiko Ezawa
Abstract:
Recently phosphorene, monolayer honeycomb structure of black phosphorus, was experimentally manufactured and attracts rapidly growing interests. Here we investigate stability and electronic properties of honeycomb structure of arsenic system based on first principle calculations. Two types of honeycomb structures, buckled and puckered, are found to be stable. We call them arsenene as in the case o…
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Recently phosphorene, monolayer honeycomb structure of black phosphorus, was experimentally manufactured and attracts rapidly growing interests. Here we investigate stability and electronic properties of honeycomb structure of arsenic system based on first principle calculations. Two types of honeycomb structures, buckled and puckered, are found to be stable. We call them arsenene as in the case of phosphorene. We find that both the buckled and puckered arsenene possess indirect gaps. We show that the band gap of the puckered and buckled arsenene can be tuned by applying strain. The gap closing occurs at 6% strain for puckered arsenene, where the bond angles between the nearest neighbour become nearly equal. An indirect-to-direct gap transition occurs by applying strain. Especially, 1% strain is enough to transform the puckered arsenene into a direct-gap semiconductor. Our results will pave a way for applications to light-emitting diodes and solar cells.
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Submitted 20 October, 2014;
originally announced October 2014.
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Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si-SiO2 nanocomposite: A Raman mapping study
Authors:
Ekta Rani,
Alka A. Ingale,
A. Chaturvedi,
C. Kamal,
D. M. Phase,
M. P. Joshi,
Aparna Chakrabarti,
Arup Banerjee,
L. M. Kukreja
Abstract:
Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps. The lower frequency (LF) phonons (~ 495 - 510 cm-1) and higher frequency (HF) phonons (~ 515 - 519 cm-1) observed in Raman mapping data (Fig. 1A) in all samples s…
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Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps. The lower frequency (LF) phonons (~ 495 - 510 cm-1) and higher frequency (HF) phonons (~ 515 - 519 cm-1) observed in Raman mapping data (Fig. 1A) in all samples studied are attributed to have originated from surface (Si-SiO2 interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling (LHC) experiment at the site of a desired frequency chosen with the help of Raman mapping, which brings out clear difference between core and surface (interface) phonons of Si nanocrystals. In order to further support our attribution of LF being surface (interface) phonons, Raman spectra calculations for Si41 cluster with oxygen termination are performed which shows strong Si phonon frequency at 512 cm-1 corresponding to the surface Si atoms. This can be considered analogous to the observed phonon frequencies in the range 495 - 510 cm-1 originating at the Si-SiO2 interface (extended). These results along with XPS data show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and thus LF phonons originate at the surface of smaller Si nanocrystals. The understanding developed can be extended to explain large variation observed in Si phonon frequencies of Si-SiO2 nanocomposites reported in the literature, especially lower frequencies.
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Submitted 11 March, 2015; v1 submitted 24 July, 2014;
originally announced July 2014.
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Ab initio Investigation on Hybrid Graphite-like Structure Made up of Silicene and Boron Nitride
Authors:
C. Kamal,
Aparna Chakrabarti,
Arup Banerjee
Abstract:
In this work, we report our results on the geometric and electronic properties of hybrid graphite-like structure made up of silicene and boron nitride (BN) layers. We predict from our calculations that this hybrid bulk system, with alternate layers of honeycomb silicene and BN, possesses physical properties similar to those of bulk graphite. We observe that there exists a weak van der Waals intera…
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In this work, we report our results on the geometric and electronic properties of hybrid graphite-like structure made up of silicene and boron nitride (BN) layers. We predict from our calculations that this hybrid bulk system, with alternate layers of honeycomb silicene and BN, possesses physical properties similar to those of bulk graphite. We observe that there exists a weak van der Waals interaction between the layers of this hybrid system in contrast to the strong inter-layer covalent bonds present in multi-layers of silicene. Furthermore, our results for the electronic band structure and the density of states show that it is a semi-metal and the dispersion around the Fermi level (E_F) is parabolic in nature and thus the charge carriers in this system behave as \textit{Nearly-Free Particle-Like}. These results indicate that the electronic properties of the hybrid bulk system resemble closely those of bulk graphite. Around E_F the electronic band structures have contributions only from silicene layers and the BN layer act only as a buffer layer in this hybrid system since it does not contribute to the electronic properties near E_F. In case of bi-layers of silicene with a single BN layer kept in between, we observe a linear dispersion around E_F similar to that of graphene. However, the characteristic linear dispersion become parabola-like when the system is subjected to a compression along the transverse direction. Our present calculations show that the hybrid system based on silicon and BN can be a possible candidate for two dimensional layered system akin to graphite and multi-layers of graphene.
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Submitted 10 December, 2013;
originally announced December 2013.
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Silicene Beyond Mono-layers - Different Stacking Configurations And Their Properties
Authors:
C. Kamal,
Aparna Chakrabarti,
Arup Banerjee,
S. K. Deb
Abstract:
We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar…
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We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar to those of graphene, our results show that the geometric and electronic properties of multi-layers of silicene are strikingly different from those of multi-layers of graphene. We observe that there exist strong inter-layer covalent bondings between the layers in multi-layers of silicene as opposed to weak van der Waal's bonding which exists between the graphene layers. The inter-layer bonding strongly influences the geometric and electronic structures of these multi-layers. Like bi-layers of graphene, silicene with two different stacking configurations AA and AB exhibits linear and parabolic dispersions around the Fermi level, respectively. However, unlike graphene, for bi-layers of silicene, these dispersion curves are shifted in band diagram; this is due to the strong inter-layer bonding present in the latter. For n > 3, we study the geometric and electronic properties of multi-layers with four different stacking configurations namely, AAAA, AABB, ABAB and ABC. Our results on cohesive energy show that all the multi-layers considered are energetically stable. Furthermore, we find that the three stacking configurations (AAAA, AABB and ABC) containing tetrahedral coordination have much higher cohesive energy than that of Bernal (ABAB) stacking configuration. This is in contrast to the case of multi-layers of graphene where ABAB is reported to be the lowest energy configuration.
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Submitted 17 October, 2012;
originally announced October 2012.
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Optical Properties of Graphene-like Two Dimensional Silicene
Authors:
Kamal Chinnathambi,
Aparna Chakrabarti,
Arup Banerjee,
S. K. Deb
Abstract:
We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene poss…
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We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene possess two major peaks: (i) a sharp peak at 1.74 eV due to transition from pi to pi* states and (ii) a broad peak in range of 4-10 eV due to excitation of sigma states to conduction bands. We also investigate the effect of external influences such as (a) transverse static electric field and (b) doping of hydrogen atoms (hydrogenation) on optical properties of silicene. Firstly, with electric field, it is observed that band gap can be opened up in silicene at Fermi level by breaking the inversion symmetry. We see appreciable changes in optical absorption due to band gap opening. Secondly, hydrogenation in silicene strongly modifies the hybridization and our geometry analysis indicates that the hybridization in silicene goes from mixture of sp^2 + sp^3 to purely sp^3. Therefore, there is no pi electron present in the system. Consequently, the electronic structure and optical absorption spectra of silicene get modified and it undergoes a transition from semi-metal to semiconductor due to hydrogenation.
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Submitted 23 May, 2012;
originally announced May 2012.
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Controlling Band Gap in Silicene Monolayer Using External Electric Field
Authors:
Kamal Chinnathambi
Abstract:
We study the geometric and electronic structures of silicene monolayer using density functional theory based calculations. The electronic structures of silicene show that it is a semi-metal and the charge carriers in silicene behave like massless Dirac-Fermions since it possesses linear dispersion around Dirac point. Our results show that the band gap in silicene monolayer can be opened up at Ferm…
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We study the geometric and electronic structures of silicene monolayer using density functional theory based calculations. The electronic structures of silicene show that it is a semi-metal and the charge carriers in silicene behave like massless Dirac-Fermions since it possesses linear dispersion around Dirac point. Our results show that the band gap in silicene monolayer can be opened up at Fermi level due to an external electric field by breaking the inversion symmetry. The presence of buckling in geometric structure of silicene plays an important role in breaking the inversion symmetry. We also show that the band gap varies linearly with the strength of external electric field. Further, the value of band gap can be tuned over a wide range.
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Submitted 13 February, 2012;
originally announced February 2012.
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Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn_2NiGa
Authors:
S. R. Barman,
S. Banik,
A. K. Shukla,
C. Kamal,
Aparna Chakrabarti
Abstract:
The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in go…
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The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in good agreement with experiment. The majority-spin Fermi surface (FS) expands in the martensitic phase, while the minority-spin FS shrinks. FS nesting indicates occurrence of phonon softening and modulation in the martensitic phase.
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Submitted 15 October, 2007; v1 submitted 14 July, 2007;
originally announced July 2007.
