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Investigation of physical and electrical properties of a suboxide layer at Si/Si-hexafluoride interface
Authors:
Seref Kalem
Abstract:
The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work…
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The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 nm to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Angström. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real ε_1 (ω) and the imaginary ε_2 (ω) dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.
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Submitted 15 March, 2025;
originally announced March 2025.
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Time-resolved radiative recombination in black silicon
Authors:
Seref Kalem
Abstract:
Black silicon (b-Si) has been receiving a great deal of interest for its potential to be used in applications ranging from sensors to solar cells and electrodes in batteries due to its promising optical, electronic and structural properties. Several approaches have been used to demonstrate the possibility of producing application quality b-Si, which also exhibits light emission properties. The pho…
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Black silicon (b-Si) has been receiving a great deal of interest for its potential to be used in applications ranging from sensors to solar cells and electrodes in batteries due to its promising optical, electronic and structural properties. Several approaches have been used to demonstrate the possibility of producing application quality b-Si, which also exhibits light emission properties. The photoluminescence is a useful technique to identify recombination pathways and thus enable us to optimize device quality. In this work, we report the results of the radiative recombination dynamics in b-Si produced by a technique involving thermal oxidation, photoresist coating and chlorine plasma etching. An ultrafast blue luminescence component competing with non-radiative recombination at surface defects was identified as no-phonon radiative recombination. This component involves two decay processes with a peak energy at around 480 nm, which have the fast component of about 15 ps followed by a component of around 50 ps lifetime. The emission exhibits a slow process in red spectral region with time constant of 1500 ps. When the surface is smoothed, the lifetime of carriers increased up to 4500 ps and the emission peak blue shifted indicating downsizing in dimensions. The results are correlated with transmission electron microscopy, localized vibrational modes and spectroscopic ellipsometry and interpreted through the presence of quantum
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Submitted 15 March, 2025;
originally announced March 2025.
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Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys
Authors:
Seref Kalem
Abstract:
Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The photoluminescence emission was characterized by typical zero-phonon, phonon-assisted, and dislocations-related emissions, which are dependent on Ge composition x. However, lu…
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Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The photoluminescence emission was characterized by typical zero-phonon, phonon-assisted, and dislocations-related emissions, which are dependent on Ge composition x. However, luminescence spectra exhibited above band-gap features, which are likely associated with the presence of Si-rich regions in the alloys. The results are correlated with light-scattering tomography, revealing the presence of dislocations and Si precipitates. The excess peak at 519 cm^{-1} in Ge-rich samples is supportive of this observation. At low Ge content, a dislocation-related band (D2 line) at 14,204 Å dominates D-band emission for x < 0.25 while overall D-band emission intensity decreases with x. Hydrogenation was found to enhance D-band emission, indicating a passivation of nonradiative recombination centers inside dislocation cores. Si-Si, Si-Ge, and Ge-Ge phonons (TO, TA, and LA), which are participating in luminescence emission, evolve with increasing Ge content and Ge-Ge and Si-Ge TO lines dominate the Raman spectrum to the detriment of the Si-Si TO phonon line. Raman spectra reveal the presence of alloy fluctuations and possible presence of Ge particles, particularly in Ge-rich samples.
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Submitted 8 October, 2021;
originally announced October 2021.
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Infrared spectroscopy of hydrogenated and chlorinated amorphous silicon
Authors:
S. Kalem,
R. Mostefaoui,
J. Bourneix,
J. Chevallier
Abstract:
The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100 cm-1 band intensity is observed. We associate this effect with the existence of SiH2CI2, mixed configurations. The Sic1 stretching band, located at 545 cm-1 in…
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The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature. As the chlorine content increases, an increase of the 2100 cm-1 band intensity is observed. We associate this effect with the existence of SiH2CI2, mixed configurations. The Sic1 stretching band, located at 545 cm-1 in unannealed samples, shifts continuously up to 590 cm-1 as the annealing temperature increases. This displacement is attributed to a predominance of SiCI2, species around 500°C and their transformation to SiCl, species and SiCl, molecules above 700°C.
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Submitted 7 October, 2021;
originally announced October 2021.
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1320 nm Light Source From Deuterium Treated Silicon
Authors:
Seref Kalem
Abstract:
We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while…
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We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized by treating the surface of Si wafer by vapor of heavy water (D2O) containing a mixture of hydrofluoric and nitric acids. Treatment without deuterium generates an intense light emission band at the band-edge of Si, while the deuterium treatment alone creates a strong emission band at 1320 nm in the near infrared. It was found that the deuterium is actively involved in the formation of a nanostructured Si surface as evidenced from relative strength of the Si-O vibrational modes and presence of N-D bondings. The origin of this photon source was discussed in terms of oxygen related defect states and dislocations. The Si surface treated by Deuterium containing mixture exhibits a strong rectifying electrical activity as it is demonstrated by Schottky diodes fabricated on these wafers. Being compatible with mature silicon circuitry, the source may find applications in photonics and optoelectronics.
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Submitted 10 May, 2021;
originally announced May 2021.
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Optical characterization of dislocation free Ge and GeOI wafers
Authors:
S. Kalem,
I. Romandic,
A. Theuwis
Abstract:
Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscopy at oblique incidence, attenuated total reflectance, laser Raman scattering, linear and nonlinear optical transmission. In n-type Ge, in addition to vibrational modes observed in intrinsic(i) Ge, a band at 535cm-1 which…
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Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscopy at oblique incidence, attenuated total reflectance, laser Raman scattering, linear and nonlinear optical transmission. In n-type Ge, in addition to vibrational modes observed in intrinsic(i) Ge, a band at 535cm-1 which is likely due to carbon and a strong peak at 668 cm-1 were observed at non-normal incidence. Despite the strong heavy hole to light hole absorption band at low energies, the 668 cm-1 peak was also observed in p-Ge. The appearance of new bands and the enhancement in band strength are in general observed in both type of wafers at oblique incidence. GeOI exhibits a strong disorder induced LO-TO coupling mode which can only be observed at non-normal incidence. Optical absorption at the near bang edge reveals the presence of doping related disorder and band shrinkage, which is supported also by Ge-Ge one-phonon line broadening at 301 cm-1. Different nonlinear optical absorption behavior was observed in n-Ge, p-Ge and GeOI wafers. The p-Ge becomes transparent to CO2 laser line at 10.6 micrometer, while transmitted power decreases in n-Ge with increasing UV-VIS pump power.
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Submitted 25 December, 2015;
originally announced December 2015.
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Transformation of germanium to fluogermanates
Authors:
S. Kalem,
O. Arthursson,
I. Romandic
Abstract:
The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO3 chemical mixture. Structure analysis indicate that the transformation results in a germanate polycrystalline layer consisting of germanium oxide and ammonium fluogermanate with a preferential crystal growth orientation in <101> direction. Local vibra…
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The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO3 chemical mixture. Structure analysis indicate that the transformation results in a germanate polycrystalline layer consisting of germanium oxide and ammonium fluogermanate with a preferential crystal growth orientation in <101> direction. Local vibrational mode analysis confirms the presence of N-H and Ge-F vibrational modes in addition to Ge-O stretching modes. Energy dispersive studies reveal the presence of hexagonal α-phase GeO2 crystal clusters and ammonium fluogermanates around these clusters in addition to a surface oxide layer. Electronic band structure as probed by ellipsometry has been associated with the germanium oxide crystals and disorder induced band tailing effects at the interface of the germanate layer and the bulk Ge wafer. The acid vapor exposure causes Ge surface to emit a yellow photoluminescence at room temperature.
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Submitted 25 December, 2015;
originally announced December 2015.
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Controlled thinning and surface smoothening of silicon nanopillars
Authors:
S Kalem,
P Werner,
B Nilsson,
V G Talalaev,
M Hagberg,
O Arthursson,
U Sodervall
Abstract:
A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial ammonium silicon fluoride coating. The results show the formation of an oxide shell and a Silicon core without significantly changing the original length and shape o…
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A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an oxide shell layer followed by the growth of sacrificial ammonium silicon fluoride coating. The results show the formation of an oxide shell and a Silicon core without significantly changing the original length and shape of the pillars. The oxide shell layer thickness can be controlled from few nanometers up to few hundred nanometers. While down sizing in diameter, smooth Si pillar surfaces of less than 10 nm roughness within 2 μm were produced after exposure to vapors of HF and HNO3 mixture as evidenced by transmission electron microscopy (TEM) analysis. The attempt to expose for long durations leads to the growth of a thick oxide whose strain effect on pillars can be assessed by coupled LO-TO vibrational modes of Si-O bonds. Photoluminescence (PL) on the pillar structures which have been down sized exhibit visible and infrared emissions, which are attributable to microscopic pillars and to the confinement of excited carriers in Si core, respectively. The formation of a smooth core-shell structures while reducing the diameter of the Si pillars has a potential in fabricating nanoscale electronic devices and functional components.
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Submitted 25 December, 2015;
originally announced December 2015.
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Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment
Authors:
Seref Kalem,
Peter Werner,
Vadim Talalaev
Abstract:
We present the room temperature (RT) near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated by vapor of HF:HNO3 chemical mixture. This treatment activates or enhances the PL intensity at NIR region ranging from 1000 nm to 1800 nm. The PL consists of a silicon band-edge emission and a broad composite band which was centered at around 140…
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We present the room temperature (RT) near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated by vapor of HF:HNO3 chemical mixture. This treatment activates or enhances the PL intensity at NIR region ranging from 1000 nm to 1800 nm. The PL consists of a silicon band-edge emission and a broad composite band which was centered at around 1400-1600 nm. The treatment modifies the wafer surface particularly at defect sites particularly pits around NWs and NW surfaces by etching and oxidation of Si and Ge. This process can induce spatial confinement of carriers where band-to-band (BB) emission is the dominant property in Si capped strained Si/Ge NW grown wafers. Strong signals were observed at sub-band gap energies in Ge capped Si/Ge NW grown wafers. It was found that NIR PL is a competitive property between the Si BB transition and deep-level emission which is mainly attributable to Si related defects, Ge dots and strained Ge layers. The enhancement in BB and deep-level PL was discussed in terms of strain, oxygen related defects, dots formation and carrier confinement effects. The results demonstrate the effectiveness of this method in enhancing and tuning NIR PL properties for possible applications.
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Submitted 25 December, 2015;
originally announced December 2015.
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Ellipsometry studies of Si/Ge superlattices with embedded Ge dots
Authors:
Seref Kalem,
Orjan Arthursson,
Peter Werner
Abstract:
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <111> crystallographic orientation. The results of the SE analysis between 20…
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In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <111> crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The electronic transitions deduced from analysis reveal Si, Ge and alloying related critical energy points.
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Submitted 25 December, 2015;
originally announced December 2015.
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Photoluminescence from Silicon nanoparticles embedded in ammonium silicon hexafluoride
Authors:
Seref Kalem,
Peter Werner,
Vadim Talalaev,
Michael Becker,
Örjan Arthursson,
Nikolai Zakharov
Abstract:
Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si surface exhibit a strong green-orange photoluminescence (PL). Difference measurements revealed a major double component spectra consisting of a broad band assoc…
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Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si surface exhibit a strong green-orange photoluminescence (PL). Difference measurements revealed a major double component spectra consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiOx, 1 < x < 2). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NPs and Si-O bondings pointing to the role of oxygen related defects. The presence of oxygen of up to 4.5 at.% in the (NH4)2SiF6 layer was confirmed by energy dispersive spectroscopy (EDS) analysis.
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Submitted 25 December, 2015;
originally announced December 2015.
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Controlling photon emission from silicon for photonic applications
Authors:
Seref Kalem
Abstract:
The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects related to dislocations, vacancies, strain induced band edge transitions and quantum confinement effects. Using an etching method developed in this work, one c…
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The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects related to dislocations, vacancies, strain induced band edge transitions and quantum confinement effects. Using an etching method developed in this work, one can also enhance selectively the UV-VIS, band edge emission and emissions at telecom wavelengths, which are tunable depending on surface treatment. Deuterium D2O etching favors near infrared emission with a characteristic single peak at 1320 nm at room temperature. The result offers an exciting solution to advanced microelectronics The method involves the treatment of Si surface by deuterium Deuterium containing acid vapor, resulting in a layer that emits at 1320 nm. Etching without deuterium, a strong band edge emission can be induced at 1150 nm or an emission at 1550 nm can be created depending on the engineered surface structure of silicon. Schottky diodes fabricated on treated surfaces exhibit a strong rectifying characteristics in both cases.
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Submitted 10 September, 2015;
originally announced September 2015.
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Black Silicon with high density and high aspect ratio nanowhiskers
Authors:
S Kalem,
P Werner,
Ö Arthursson,
V Talalaev,
B Nilsson,
M Hagberg,
H Frederiksen,
U Södervall
Abstract:
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters o…
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Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3 nm exhibits strong photoluminescence (PL) both in visible and infrared, which are interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicate that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of surface morphology of the nano whiskers.
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Submitted 16 May, 2011;
originally announced May 2011.
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Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching
Authors:
Seref Kalem
Abstract:
Cryptocrystal layers of ammonium silicon fluoride (NH4)2SiF6 were grown on silicon wafers by dry etching using the vapors of HF:HNO3 solution at room temperature. As-grown layers are composed of white granular crystalline film with thicknesses of up to 8 micrometer which were synthesized with growth rates of around 1 micron/hour. The crystallinity was analysed by X-ray diffraction which indicate…
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Cryptocrystal layers of ammonium silicon fluoride (NH4)2SiF6 were grown on silicon wafers by dry etching using the vapors of HF:HNO3 solution at room temperature. As-grown layers are composed of white granular crystalline film with thicknesses of up to 8 micrometer which were synthesized with growth rates of around 1 micron/hour. The crystallinity was analysed by X-ray diffraction which indicates an isometric hexoctahedral system(4/m -32/m) with Fm3m space grouping of (NH4)2SiF6 cryptohalite crystals. These results have been confirmed by the presence of the vibrational absorption bands of (NH4)2SiF6 species by FTIR transmission. Strong absorption bands were observed in the infrared at 480cm-1, 725cm-1, 1433cm-1 and 3327cm-1 and assigned to N-H and Si-F related vibrational modes of (NH4)2SiF6. Annealing above 150oC leads to the formation of individual crystals with sizes up to 20 micrometer on the surface, thus indicating the posibility of forming solid compound layers with fine grain sizes on silicon.
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Submitted 23 October, 2004;
originally announced October 2004.
