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Showing 1–2 of 2 results for author: Kalas, B

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  1. arXiv:2305.07635  [pdf

    cond-mat.mtrl-sci physics.comp-ph

    Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

    Authors: Tivadar Lohner, Attila Nemeth, Zsolt Zolnai, Benjamin Kalas, Alekszej Romanenko, Nguyen Quoc Khanh, Edit Szilagyi, Endre Kotai, Emil Agocs, Zsolt Toth, Judit Budai, Peter Petrik, Miklos Fried, Istvan Barsony, Jozsef Gyulai

    Abstract: Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a challenging task. In this work the formation and accumulation of shallow damage profiles was studied by in-situ spectroscopic ellipsometry (SE) for the accurate tr… ▽ More

    Submitted 12 May, 2023; originally announced May 2023.

    Comments: 23 pages, 8 figures

    Journal ref: Materials Science in Semiconductor Processing 152 (2022) 107062

  2. arXiv:2201.07564  [pdf

    cond-mat.mes-hall

    Large-area nanoengineering of graphene corrugations for visible-frequency graphene plasmons

    Authors: Gergely Dobrik, Peter Nemes-Incze, Bruno Majerus, Peter Sule, Peter Vancso, Gabor Piszter, Miklos Menyhard, Benjamin Kalas, Peter Petrik, Luc Henrard, Levente Tapaszto

    Abstract: Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they… ▽ More

    Submitted 19 January, 2022; originally announced January 2022.

    Journal ref: Nature Nanotechnology 17 61 (2022)