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Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
Authors:
Taisuke Kageura,
Yosuke Sasama,
Keisuke Yamada,
Kosuke Kimura,
Shinobu Onoda,
Yamaguchi Takahide
Abstract:
The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutional doping, thus enabling a wide range of electronic applications. Although the conductivity is commonly explained by surface transfer doping due to air…
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The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutional doping, thus enabling a wide range of electronic applications. Although the conductivity is commonly explained by surface transfer doping due to air-borne surface acceptors, there remains uncertainty regarding the main determining factors that govern the degree of band bending and hole density, which are crucial for the design of electronic devices. Here, we elucidate the dominant factor influencing band bending by creating shallow nitrogen-vacancy (NV) centers beneath the hydrogen-terminated diamond surface through nitrogen ion implantation at varying fluences. We measured the photoluminescence and optically detected magnetic resonance (ODMR) of the NV centers, as well as the surface conductivity, as a function of the nitrogen implantation fluence. The disappearance of the conductivity with increasing nitrogen implantation fluence coincides with the appearance of photoluminescence and ODMR signals from negatively charged NV centers. This finding indicates that band bending is not exclusively determined by the work-function difference between diamond and the surface acceptor material, but by the finite density of surface acceptors. This work emphasizes the importance of distinguishing work-function-difference-limited band bending and surface-acceptor-density-limited band bending when modeling the surface transfer doping, and provides useful insights for the development of devices based on hydrogen-terminated diamond.
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Submitted 1 August, 2024; v1 submitted 26 October, 2023;
originally announced October 2023.
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High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Authors:
Yosuke Sasama,
Taisuke Kageura,
Masataka Imura,
Kenji Watanabe,
Takashi Taniguchi,
Takashi Uchihashi,
Yamaguchi Takahide
Abstract:
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits wit…
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Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonly believed to be essential for generating the conductivity, limits the performance of transistors made of hydrogen-terminated diamond because it requires the presence of ionized surface acceptors, which cause hole scattering. Here, we report on fabrication of a p-channel wide-bandgap heterojunction field-effect transistor consisting of a hydrogen-terminated diamond channel and hexagonal boron nitride ($h$-BN) gate insulator, without relying on surface transfer doping. Despite its reduced density of surface acceptors, the transistor has the lowest sheet resistance ($1.4$ k$Ω$) and largest on-current ($1600$ $μ$m mA mm$^{-1}$) among p-channel wide-bandgap transistors, owing to the highest hole mobility (room-temperature Hall mobility: $680$ cm$^2$V$^{-1}$s$^{-1}$). Importantly, the transistor also shows normally-off behavior, with a high on/off ratio exceeding $10^8$. These characteristics are suited for low-loss switching and can be explained on the basis of standard transport and transistor models. This new approach to making diamond transistors paves the way to future wide-bandgap semiconductor electronics.
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Submitted 7 November, 2021; v1 submitted 11 February, 2021;
originally announced February 2021.
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Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Authors:
Yosuke Sasama,
Taisuke Kageura,
Katsuyoshi Komatsu,
Satoshi Moriyama,
Jun-ichi Inoue,
Masataka Imura,
Kenji Watanabe,
Takashi Taniguchi,
Takashi Uchihashi,
Yamaguchi Takahide
Abstract:
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In…
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Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.
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Submitted 17 May, 2020; v1 submitted 31 January, 2020;
originally announced January 2020.
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Irradiation induced modification of the superconducting properties of heavily boron doped diamond
Authors:
Daniel Creedon,
Yi Jiang,
Kumaravelu Ganesan,
Alastair Stacey,
Taisuke Kageura,
Hiroshi Kawarada,
Jeffrey McCallum,
Brett Johnson,
Steven Prawer,
David Jamieson
Abstract:
Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for s…
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Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge carrier concentration by introducing compensating defects via high energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects.
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Submitted 5 September, 2018;
originally announced September 2018.
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Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
Authors:
Yamaguchi Takahide,
Yosuke Sasama,
Hiroyuki Takeya,
Yoshihiko Takano,
Taisuke Kageura,
Hiroshi Kawarada
Abstract:
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this p…
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The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.
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Submitted 19 November, 2018; v1 submitted 26 June, 2018;
originally announced June 2018.
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Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Authors:
Yamaguchi Takahide,
Yosuke Sasama,
Masashi Tanaka,
Hiroyuki Takeya,
Yoshihiko Takano,
Taisuke Kageura,
Hiroshi Kawarada
Abstract:
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)…
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We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance is positive within the range of 2<T<10 K and -7<B<7 T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore we find: 1) magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; 2) magnetoresistance is nearly independent of the direction of the applied magnetic field; 3) for the in-plane field, the magnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universal function of B/T. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.
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Submitted 17 May, 2016;
originally announced May 2016.
