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Investigation of Low Frequency Noise in CryoCMOS devices through Statistical Single Defect Spectroscopy
Authors:
Edoardo Catapano,
Anirudh Varanasi,
Philippe Roussel,
Robin Degraeve,
Yusuke Higashi,
Ruben Asanovski,
Ben Kaczer,
Javier Diaz Fortuny,
Michael Waltl,
Valeri Afanasiev,
Kristiaan De Greve,
Alexander Grill
Abstract:
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour a…
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High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour and that gate oxide defects are still active around 4.2 K, producing random telegraph noise. In this paper, we probe single gate oxide defects in 2500 nMOS devices down to 5 K in order to investigate the origin of 1/f noise in CryoCMOS devices. From our results, it is clear that the number of defects active at cryogenic temperatures resulting in random telegraph noise is larger than at 300 K. Threshold voltage shifts due to charged defects are shown to be exponentially distributed, with different modalities across temperatures and biases: from monomodal at 300 K to trimodal below 100 K. The third mode is interpreted in the framework of percolation theory. By fitting these distributions, it is shown that more than 80% of the detected defects belongs to the oxide bulk. Afterwards, starting from the raw data in time domain, we reconstruct the low frequency noise spectra, highlighting the contributions of defects belonging to different branches and, therefore, to different oxide layers. This analysis shows that, although interface traps and large defects associated with the third mode are the main sources of 1/f noise at 5 K, bulk oxide defects still contribute significantly to low-frequency noise at cryogenic temperatures. Finally, we show that defect time constants and step heights are uncorrelated, proving that elastic tunnelling model for charge trapping is not accurate.
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Submitted 6 May, 2025;
originally announced May 2025.
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Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics
Authors:
Md Nur K. Alam,
S. Clima,
B. Kaczer,
Ph. Roussel,
B. Truijen,
L. - A. Ragnarsson,
N. Horiguchi,
M. Heyns,
J. Van Houdt
Abstract:
Existence of quasi-static negative capacitance (QSNC) was proposed from an interpretation of the widely accepted Landau model of ferroelectrics. However, many works showed not to support the QSNC theory, making it controversial. In this letter we show the Landau model when used together with transition-state-theory, can connect various models including first-principles, Landau, Preisach and nuclea…
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Existence of quasi-static negative capacitance (QSNC) was proposed from an interpretation of the widely accepted Landau model of ferroelectrics. However, many works showed not to support the QSNC theory, making it controversial. In this letter we show the Landau model when used together with transition-state-theory, can connect various models including first-principles, Landau, Preisach and nucleation limited switching while it does not predict the existence of QSNC.
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Submitted 19 April, 2024;
originally announced April 2024.
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Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Authors:
Arnout Beckers,
Jakob Michl,
Alexander Grill,
Ben Kaczer,
Marie Garcia Bardon,
Bertrand Parvais,
Bogdan Govoreanu,
Kristiaan De Greve,
Gaspard Hiblot,
Geert Hellings
Abstract:
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power…
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Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing due to band tails is an important phenomenon to include in low-temperature analytical MOSFET models as it predicts theoretical lower bounds on the leakage power and supply voltage in tailored cryogenic CMOS technologies with tuned threshold voltages. Previous physics-based modeling required to evaluate functions with no closed-form solutions, defeating the purpose of fast and efficient model evaluation. Thus far, only the empirically proposed expressions are in closed form. This article bridges this gap by deriving a physics-based and closed-form model for the full saturating trend of the subthreshold swing from room down to low temperature. The proposed model is compared against experimental data taken on some long and short devices from a commercial 28-nm bulk CMOS technology down to 4.2 K.
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Submitted 24 September, 2023; v1 submitted 22 December, 2022;
originally announced December 2022.
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NBTI in Nanoscale MOSFETs - The Ultimate Modeling Benchmark
Authors:
Tibor Grasser,
Karina Rott,
Hans Reisinger,
Michael Waltl,
Franz Schanovsky,
Ben Kaczer
Abstract:
After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reaction-diffusion models, is built around the idea that hydrogen is released from the interface and that it is the diffusion of some form of hydrogen that controls both degradation and recovery. While many different variants…
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After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reaction-diffusion models, is built around the idea that hydrogen is released from the interface and that it is the diffusion of some form of hydrogen that controls both degradation and recovery. While many different variants of the reaction-diffusion idea have been published over the years, the most commonly used recent models are based on non-dispersive reaction rates and non- dispersive diffusion. The other class of models is based on the idea that degradation is controlled by first-order reactions with widely distributed (dispersive) reaction rates. We demonstrate that these two classes give fundamentally different predictions for the stochastic degradation and recovery of nanoscale devices, therefore providing the ultimate modeling benchmark. Using de- tailed experimental time-dependent defect spectroscopy (TDDS) data obtained on such nanoscale devices, we investigate the compatibility of these models with experiment. Our results show that the diffusion of hydrogen (or any other species) is unlikely to be the limiting aspect that determines degradation. On the other hand, the data are fully consistent with reaction-limited models. We finally argue that only the correct understanding of the physical mechanisms leading to the significant device-to-device variation observed in the degradation in nanoscale devices will enable accurate reliability projections and device optimization.
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Submitted 3 September, 2014;
originally announced September 2014.
