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Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films
Authors:
Anusha Kamath Manjeshwar,
Zhifei Yang,
Chin-Hsiang Liao,
Jiaxuan Wen,
Steven J. Koester,
Richard D. James,
Bharat Jalan
Abstract:
Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously reported in MBE-grown BaTiO3 films. We report the in-situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybr…
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Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously reported in MBE-grown BaTiO3 films. We report the in-situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybrid MBE using metal-organic precursors. This capacitor structure consisting of 16 nm SrRuO3/40 nm BaTiO3/16 nm SrRuO3 shows hysteretic polarization-electric field (P-E) curves with P_r = 15 μC cm-2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects.
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Submitted 3 May, 2025;
originally announced May 2025.
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Interfacial strong coupling and negative dispersion of propagating polaritons in freestanding oxide membranes
Authors:
Brayden Lukaskawcez,
Shivasheesh Varshney,
Sooho Choo,
Sang Hyun Park,
Dongjea Seo,
Liam Thompson,
Devon Uram,
Hayden Binger,
Steve Koester,
Sang-Hyun Oh,
Tony Low,
Bharat Jalan,
Alexander McLeod
Abstract:
Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultra…
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Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultrafast laser to study pristine nano-thick SrTiO3 membranes prepared by hybrid molecular beam epitaxy. As predicted by coupled mode theory, we find that strong coupling of interfacial polaritons realizes symmetric and antisymmetric hybridized modes with simultaneously tunable negative and positive group velocities. By resolving reflection of these propagating modes from membrane edges, defects, and substrate structures, we quantify their dispersion with position-resolved nano-spectroscopy. Remarkably, we find polariton negative dispersion is both robust and tunable through choice of membrane dielectric environment and thickness and propose a novel design for in-plane Veselago lensing harnessing this control. Our work lays the foundation for tunable transformation optics at the nanoscale using polaritons in a wide range of freestanding complex oxide membranes.
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Submitted 2 March, 2025;
originally announced March 2025.
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Dielectrophoresis-Enhanced Graphene Field-Effect Transistors for Nano-Analyte Sensing
Authors:
Nezhueyotl Izquierdo,
Ruixue Li,
Peter R. Christenson,
Sang-Hyun Oh,
Steven J. Koester
Abstract:
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics, environmental monitoring, and materials science. Because DEP relies upon the creation of sharp electrode edges, its sensitivity is fundamentally limited by the ele…
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Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics, environmental monitoring, and materials science. Because DEP relies upon the creation of sharp electrode edges, its sensitivity is fundamentally limited by the electrode thickness. Graphene, with its monolayer thickness, enables scaling of the DEP force, allowing trapping of particles at graphene edges at ultra-low voltages. However, to date, this enhanced trapping efficiency of graphene has not been translated into an effective sensing geometry. Here, we demonstrate the expansion of graphene DEP trapping capability into a graphene field effect transistor (GFET) geometry that allows the trapped particles to be electrically detected. This four-terminal multi-functional hybrid device structure operates in three distinct modes: DEP, GFET, and DEP-GFET. By segmenting the channel of the GFET into multiple parallel channels, greatly increased density of particle trapping is demonstrated using fluorescence microscopy analysis. We show further enhancement of the trapping efficiency using engineered "nano-sites," which are holes in the graphene with size on the order of 200-300 nm. Scanning electron microscope analysis of immobilized gold nanoparticles (AuNPs) shows trapping efficiency >90% for properly engineered nano-sites. Using nano-site trapping, we also demonstrate real-time, rapid electrical sensing of AuNPs, with >2% current change occurring in 4.1 seconds, as well as rapid sensing of a variety of biomolecule-coated nanoparticles. This work shows that graphene DEP is an effective platform for nanoparticle and bio-molecule sensing that overcomes diffusion-limited and Brownian motion-based interactions.
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Submitted 16 December, 2024;
originally announced December 2024.
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Fast and Facile Synthesis Route to Epitaxial Oxide Membrane Using a Sacrificial Layer
Authors:
Shivasheesh Varshney,
Sooho Choo,
Liam Thompson,
Zhifei Yang,
Jay Shah,
Jiaxuan Wen,
Steven J. Koester,
K. Andre Mkhoyan,
Alexander McLeod,
Bharat Jalan
Abstract:
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, t…
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The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques like Molecular Beam Epitaxy (MBE). This is where easy-to-grow binary alkaline earth metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (< 5 minutes) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution x-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate epitaxial STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding research possibilities.
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Submitted 19 November, 2023;
originally announced November 2023.
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Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy
Authors:
Hyojin Yoon,
Tristan K. Truttmann,
Fengdeng Liu,
Bethany E. Matthews,
Sooho Choo,
Qun Su,
Vivek Saraswat,
Sebastian Manzo,
Michael S. Arnold,
Mark E. Bowden,
Jason K. Kawasaki,
Steven J. Koester,
Steven R. Spurgeon,
Scott A. Chambers,
Bharat Jalan
Abstract:
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, w…
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The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.
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Submitted 17 June, 2022;
originally announced June 2022.
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How to Report and Benchmark Emerging Field-Effect Transistors
Authors:
Zhihui Cheng,
Chin-Sheng Pang,
Peiqi Wang,
Son T. Le,
Yanqing Wu,
Davood Shahrjerdi,
Iuliana Radu,
Max C. Lemme,
Lian-Mao Peng,
Xiangfeng Duan,
Zhihong Chen,
Joerg Appenzeller,
Steven J. Koester,
Eric Pop,
Aaron D. Franklin,
Curt A. Richter
Abstract:
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc…
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Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.
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Submitted 4 August, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Layer-dependence of dielectric response and water-enhanced ambient degradation of highly-anisotropic black As
Authors:
Hwanhui Yun,
Supriya Ghosh,
Prafful Golani,
Steven J. Koester,
K. Andre Mkhoyan
Abstract:
Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using STEM imaging and spectroscopy. Atomic-resolution HAADF-STEM images…
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Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using STEM imaging and spectroscopy. Atomic-resolution HAADF-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-EELS is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied highlighting high sensitivity to moisture in the air.
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Submitted 21 February, 2020;
originally announced February 2020.
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P-type $δ$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication
Authors:
Tomáš Škereň,
Sigrun Köster,
Bastien Douhard,
Claudia Fleischmann,
Andreas Fuhrer
Abstract:
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface di…
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Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface diffusion of the dopants are investigated by STM imaging and result in an upper bound of 2\,nm for the lithographic resolution which is also corroborated by fabricating a 7.5\,nm wide p-type nanowire and measuring its electrical properties. Finally, to demonstrate the feasibility of bipolar dopant device fabrication with this technique, we prepared a 100\,nm wide pn junction and show that its electrical behavior is similar to that of an Esaki diode.
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Submitted 12 December, 2019;
originally announced December 2019.
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An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Authors:
Ryan J. Wu,
Sagar Udyavara,
Rui Ma,
Yan Wang,
Manish Chhowalla,
Steven J. Koester,
Matthew Neurock,
K. Andre Mkhoyan
Abstract:
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is…
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Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is a fundamental limitation from the bonding and interactions at the metal-MoS2 interface that cannot be solved by improved deposition engineering. STEM analysis in conjunction with theory shows that when MoS2 is in contact with Ti, a metal with a high affinity to form strong bonds with sulfur, there is a release of S from Mo along with the formation of small Ti/TixSy clusters. A destruction of the MoS2 layers and penetration of metal can also be expected. The design of true high-mobility metal-MoS2 contacts will require the optimal selection of the metal or alloy based on their bonding interactions with the MoS2 surface. This can be advanced by evaluation of binding energies with increasing the number of atoms within metal clusters.
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Submitted 3 July, 2018;
originally announced July 2018.
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Spin absorption by in situ deposited nanoscale magnets on graphene spin valves
Authors:
Walid Amamou,
Gordon Stecklein,
Steven J. Koester,
Paul A. Crowell,
Roland K. Kawakami
Abstract:
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using se…
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An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the effective spin current $j_e = \frac{2e}{\hbar} j_s$ absorbed by Fe is as large as $10^8$ A/m$^2$. The maximum value of $j_e$ is limited by the resistance-area product of the graphene/Fe interface, which is as small as 3 $Ωμ$m$^2$. The spin current absorbed by the same thickness of Cu is smaller than for Fe, as expected given the longer spin diffusion length and larger spin resistance of Cu compared to Fe. These results allow for a quantitative assessment of the prospects for achieving spin transfer torque switching of a nanomagnet using a graphene-based nonlocal spin valve.
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Submitted 5 April, 2018;
originally announced April 2018.
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The Helical Superstructure of Intermediate Filaments
Authors:
Lila Bouzar,
Martin Michael Müller,
René Messina,
Bernd Nöding,
Sarah Köster,
Hervé Mohrbach,
Igor M. Kulić
Abstract:
Intermediate filaments are the least explored among the large cytoskeletal elements. We show here that they display conformational anomalies in narrow microfluidic channels. Their unusual behavior can be understood as the consequence of a previously undetected, large scale helically curved superstructure. Confinement in a channel orders the otherwise soft, strongly fluctuating helical filaments an…
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Intermediate filaments are the least explored among the large cytoskeletal elements. We show here that they display conformational anomalies in narrow microfluidic channels. Their unusual behavior can be understood as the consequence of a previously undetected, large scale helically curved superstructure. Confinement in a channel orders the otherwise soft, strongly fluctuating helical filaments and enhances their structural correlations, giving rise to experimentally detectable, strongly oscillating tangent correlation functions. We propose an explanation for the detected intrinsic curving phenomenon - an elastic shape instability that we call autocoiling. The mechanism involves self-induced filament buckling via a surface stress located at the outside of the cross-section. The results agree with ultrastructural findings and rationalize for the commonly observed looped intermediate filament shapes.
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Submitted 13 March, 2018;
originally announced March 2018.
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Using Programmable Graphene Channels as Weights in Spin-Diffusive Neuromorphic Computing
Authors:
Jiaxi Hu,
Gordon Stecklein,
Yoska Anugrah,
Paul A. Crowell,
Steven J. Koester
Abstract:
A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four…
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A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four-component spin/charge circuit simulations coupled to magnetic dynamics are used to show the feasibility of the neuron-synapse functionality and quantify the analog weighting capability of the graphene under different spin relaxation mechanisms. By realizing transistor-free weight implementation, the graphene spin-diffusive neural network reduces the energy consumption to 0.08-0.32 fJ per cell-synapse and achieves significantly better scalability compared to its digital counterparts, particularly as the number and bit accuracy of the synapses increases.
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Submitted 1 December, 2017;
originally announced December 2017.
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Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study
Authors:
M. Longobardi,
C. J. Kirkham,
R. Villarreal,
S. A. Koster,
D. R. Bowler,
Ch. Renner
Abstract:
Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of…
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Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of different patterns along the nanolines as the imaging bias is varied. We observe an electronic phase shift of the Bi dimers, associated with imaging atomic p-orbitals, and an electronic coupling between the Bi nanoline and neighbouring Si dimers, which influences the appearance of both. Understanding the interplay between the Bi nanolines and Si substrate could open a novel route to modifying the electronic properties of the nanolines.
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Submitted 5 December, 2017; v1 submitted 26 October, 2017;
originally announced October 2017.
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Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)
Authors:
C. J. Kirkham,
M. Longobardi,
S. A. Koster,
Ch. Renner,
D. R. Bowler
Abstract:
Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for…
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Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for Bi dimers in the nanoline, where the sharp feature is the counterintuitive signature of these dimers flipping during scanning. The perfect correspondence between the STM data and the DFT simulation demonstrated in this study highlights the detailed understanding we have of the complex Bi-Si(001) Haiku system.
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Submitted 3 May, 2017;
originally announced May 2017.
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Semi-analytical model of the contact resistance in two-dimensional semiconductors
Authors:
Roberto Grassi,
Yanqing Wu,
Steven J. Koester,
Tony Low
Abstract:
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection mechanism changes from thermionic to tunneling with gate biasing, existing models tend to oversimplify the transport problem, by neglecting the 2D transport nature and…
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Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection mechanism changes from thermionic to tunneling with gate biasing, existing models tend to oversimplify the transport problem, by neglecting the 2D transport nature and the modulation of the Schottky barrier height, the latter being of particular importance in back-gated devices. In this work, we develop a semi-analytical model based on Bardeen's transfer Hamiltonian approach to describe both effects. Remarkably, our model is able to reproduce several experimental observations of a metallic behavior in the contact resistance, i.e., a decreasing resistance with decreasing temperature, occurring at high gate voltage.
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Submitted 26 January, 2017;
originally announced January 2017.
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Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
Authors:
V. Ongun Özçelik,
Javad G. Azadani,
Ce Yang,
Steven J. Koester,
Tony Low
Abstract:
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer material…
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We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.
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Submitted 23 March, 2016; v1 submitted 8 March, 2016;
originally announced March 2016.
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Structure of self-assembled Mn atom chains on Si(001)
Authors:
R. Villarreal,
M. Longobardi,
S. A. Köster,
Ch. J. Kirkham,
D. Bowler,
Ch. Renner
Abstract:
Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and densi…
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Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and density functional theory we find that a simple necklace-like chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modelling the electronic and magnetic properties of Mn atom chains on Si(001).
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Submitted 28 October, 2015;
originally announced October 2015.
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Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
Authors:
Nazila Haratipour,
Steven J. Koester
Abstract:
Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-um gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 uS/um at VDS = -2 V. After passivation, the same d…
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Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-um gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 uS/um at VDS = -2 V. After passivation, the same devices displayed ambipolar behavior, and when tested as n-MOSFETs, had peak gm = 66 uS/um at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 uS/um. These results are an important step toward realization of high-performance black phosphorus complementary logic circuits.
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Submitted 29 November, 2015; v1 submitted 22 August, 2015;
originally announced August 2015.
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Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors
Authors:
Yang Su,
Chaitanya U. Kshirsagar,
Matthew C. Robbins,
Nazila Haratipour,
Steven J. Koester
Abstract:
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of -0.8 V and +0.8 V…
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The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET fabricated using a common local backgate electrode with thin (20 nm) HfO2 gate dielectric. The constituent devices have linear threshold voltages of -0.8 V and +0.8 V and produce peak transconductances of 16 uS/um and 41 uS/um for the MoS2 n-MOSFET and BP p-MOSFET, respectively. The inverter shows a voltage gain of 3.5 at a supply voltage, VDD = 2.5 V, and has peak switching current of 108 uA and off-state current of 8.4 uA (2.4 uA) at VIN = 0 (VIN = 2.5 V). In addition, the inverter has voltage gain greater than unity for VDD > 0.5 V, has open butterfly curves for VDD > 1 V, and achieves static noise margin over 500 mV at VDD = 2.5 V. The voltage gain was found to be insensitive to temperature between 270 K and 340 K, and AC large and small-signal operation was demonstrated at frequencies up to 100 kHz. The demonstration of a complementary 2D inverter which operates in a symmetric voltage window suitable for driving a subsequent logic stage is a significant step forward in developing practical applications for devices based upon 2D materials.
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Submitted 20 February, 2016; v1 submitted 21 August, 2015;
originally announced August 2015.
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Capacitive Sensing of Intercalated H2O Molecules Using Graphene
Authors:
Eric J. Olson,
Rui Ma,
Tao Sun,
Mona A. Ebrish,
Nazila Haratipour,
Kyoungmin Min,
Narayana R. Aluru,
Steven J. Koester
Abstract:
Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors, where such interactions could influence the operation of the device. It is well-known that water can be trapped underneath graphene and its host substrate, however, the electrical effect of water beneath graphene and th…
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Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors, where such interactions could influence the operation of the device. It is well-known that water can be trapped underneath graphene and its host substrate, however, the electrical effect of water beneath graphene and the dynamics of how it changes with different ambient conditions has not been quantified. Here, using a metal-oxide-graphene variable-capacitor (varactor) structure, we show that graphene can be used to capacitively sense the intercalation of water between graphene and HfO2 and that this process is reversible on a fast time scale. Atomic force microscopy is used to confirm the intercalation and quantify the displacement of graphene as a function of humidity. Density functional theory simulations are used to quantify the displacement of graphene induced by intercalated water and also explain the observed Dirac point shifts as being due to the combined effect of water and oxygen on the carrier concentration in the graphene. Finally, molecular dynamics simulations indicate that a likely mechanism for the intercalation involves adsorption and lateral diffusion of water molecules beneath the graphene.
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Submitted 20 August, 2015;
originally announced August 2015.
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Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope
Authors:
Nazila Haratipour,
Matthew C. Robbins,
Steven J. Koester
Abstract:
We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of 101 uS/um at a drain-to-source bias voltage, Vds = -3 V. Temperature-dependent analysis also shows that the subthreshold slope, SS, is nearly ideal, with a minim…
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We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of 101 uS/um at a drain-to-source bias voltage, Vds = -3 V. Temperature-dependent analysis also shows that the subthreshold slope, SS, is nearly ideal, with a minimum value of SS = 66 mV/decade at room temperature and Vds = -0.1 V. Furthermore, devices with 7-nm HfO2 dielectrics and Leff = 0.3 um displayed gm as high as 204 uS/um at Vds = -1.5 V.
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Submitted 30 September, 2014;
originally announced September 2014.
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Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
Authors:
Nathan Youngblood,
Che Chen,
Steven J. Koester,
Mo Li
Abstract:
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a band gap, however, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of 2D mate…
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Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a band gap, however, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of 2D materials, is well-suited for photodetector applications due to its narrow but finite band gap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under a bias with very low dark current and attain intrinsic responsivity up to 135 mA/W and 657 mA/W in 11.5nm and 100 nm thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.
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Submitted 11 December, 2014; v1 submitted 23 September, 2014;
originally announced September 2014.
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Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides
Authors:
Nathan Youngblood,
Yoska Anugrah,
Rui Ma,
Steven J. Koester,
Mo Li
Abstract:
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types of optoelectronic devices, equally important, require different materials and consequently it has been challenging to realize both using a single material combin…
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For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types of optoelectronic devices, equally important, require different materials and consequently it has been challenging to realize both using a single material combination, especially in a way that can be integrated on the ubiquitous silicon platform. Graphene, with its gapless band structure, stands out as a unique optoelectronic material that allows both photodetection and optical modulation. Here, we demonstrate a single graphene-based device that simultaneously provides both efficient optical modulation and photodetection. The graphene device is integrated on a silicon waveguide and is tunable with a gate made from another layer of graphene to achieve near-infrared photodetection responsivity of 57 mA/W and modulation depth of 64%. This novel multifunctional device may lead to many unprecedented optoelectronic applications.
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Submitted 27 February, 2014;
originally announced February 2014.
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Graphene-based quantum capacitance wireless vapor sensors
Authors:
David A. Deen,
Eric J. Olson,
Mona A. Ebrish,
Steven J. Koester
Abstract:
A wireless vapor sensor based upon the quantum capacitance effect in graphene is demonstrated. The sensor consists of a metal-oxide-graphene variable capacitor (varactor) coupled to an inductor, creating a resonant oscillator circuit. The resonant frequency is found to shift in proportion to water vapor concentration for relative humidity (RH) values ranging from 1% to 97% with a linear frequency…
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A wireless vapor sensor based upon the quantum capacitance effect in graphene is demonstrated. The sensor consists of a metal-oxide-graphene variable capacitor (varactor) coupled to an inductor, creating a resonant oscillator circuit. The resonant frequency is found to shift in proportion to water vapor concentration for relative humidity (RH) values ranging from 1% to 97% with a linear frequency shift of 5.7 +- 0.3 kHz / RH%. The capacitance values extracted from the wireless measurements agree with those determined from capacitance-voltage measurements, providing strong evidence that the sensing arises from the variable quantum capacitance in graphene. These results represent a new sensor transduction mechanism and pave the way for graphene quantum capacitance sensors to be studied for a wide range of chemical and biological sensing applications.
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Submitted 28 June, 2013;
originally announced June 2013.
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High-speed waveguide-coupled graphene-on-graphene optical modulators
Authors:
Steven J. Koester,
Mo Li
Abstract:
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower graphene acts as a tunable absorber, while the upper layer functions as a transparent gate electrode. Calculations based upon realistic graphene material propert…
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An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower graphene acts as a tunable absorber, while the upper layer functions as a transparent gate electrode. Calculations based upon realistic graphene material properties show that 3-dB bandwidths over 100 GHz (30 GHz) are possible at near- (λ=1.55 μm) and mid- (λ=3.5μm) infrared bands. The effect of background doping and potential fluctuations on the bandwidth, modulation depth and insertion loss are also quantified.
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Submitted 21 February, 2012;
originally announced February 2012.
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Endotaxial Si nanolines in Si(001):H
Authors:
F. Bianco,
J. H. G. Owen,
S. A. Köster,
D. Mazur,
D. R. Bowler,
Ch. Renner
Abstract:
We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is i…
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We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.
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Submitted 16 March, 2011;
originally announced March 2011.
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On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
Authors:
Siyuranga O. Koswatta,
Steven J. Koester,
Wilfried Haensch
Abstract:
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents, which is a prerequisite for high-performance operation. In this paper we explore the performance potential of a 1D TFET with a broken-gap heterojunction source i…
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Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents, which is a prerequisite for high-performance operation. In this paper we explore the performance potential of a 1D TFET with a broken-gap heterojunction source injector using dissipative quantum transport simulations based on the nonequilibrium Green's function formalism, and the carbon nanotube bandstructure as the model 1D material system. We provide detailed insights into broken-gap TFET (BG-TFET) operation, and show that it can indeed produce less than 60mV/decade subthreshold swing at room temperature even in the presence of electron-phonon scattering. The 1D geometry is recognized to be uniquely favorable due to its superior electrostatic control, reduced carrier thermalization rate, and beneficial quantum confinement effects that reduce the off-state leakage below the thermionic limit. Because of higher source injection compared to staggered-gap and homojunction geometries, BG-TFET delivers superior performance that is comparable to MOSFET's. BG-TFET even exceeds the MOSFET performance at lower supply voltages (VDD), showing promise for low-power/high-performance applications.
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Submitted 23 November, 2010;
originally announced November 2010.
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One dimensional Si-in-Si(001) template for single-atom wire growth
Authors:
J. H. G. Owen,
F. Bianco,
S. A. Köster,
D. Mazur,
D. R. Bowler,
Ch. Renner
Abstract:
Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogen…
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Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogenated Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.
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Submitted 13 July, 2010;
originally announced July 2010.
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Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons
Authors:
Qin Zhang,
Yeqing Lu,
Huili Grace Xing,
Steven J. Koester,
Siyuranga O. Koswatta
Abstract:
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, λeff, is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters i…
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A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, λeff, is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that even for a thick SiO2 back oxide λeff can be improved efficiently by thinner top oxide thickness, and to some extent, with high-k dielectrics. The model is then applied to self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier field-effect transistors (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for large λeff, the scaling is limited by the conventional electrostatic short channel effects (SCEs). On the other hand, for small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100mV/dec is still possible with a sub-10nm gate length in GNR SB-FETs.
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Submitted 30 April, 2010;
originally announced April 2010.
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A-site Ordering versus Electronic Inhomogeneity in CMR-Manganite Films
Authors:
V. Moshnyaga,
L. Sudheendra,
O. I. Lebedev,
K. Gehrke,
O. Shapoval,
A. Belenchuk,
S. A. Koester,
B. Damaschke,
G. van Tendeloo,
K. Samwer
Abstract:
Epitaxial La3/4Ca1/4MnO3/MgO(100) (LCMO) thin films show unusual rhombohedral (R-3c) structure with a new perovskite superstructure due to unique ordering of La and Ca at the A-site positions. Very sharp insulator-metal and para-ferromagnetic phase transitions at temperatures up to TMI ~ TC=295 K were observed. The ordered films were electronically homogeneous down to 1 nm scale as revealed by s…
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Epitaxial La3/4Ca1/4MnO3/MgO(100) (LCMO) thin films show unusual rhombohedral (R-3c) structure with a new perovskite superstructure due to unique ordering of La and Ca at the A-site positions. Very sharp insulator-metal and para-ferromagnetic phase transitions at temperatures up to TMI ~ TC=295 K were observed. The ordered films were electronically homogeneous down to 1 nm scale as revealed by scanning tunnelling microscopy/spectroscopy. In contrast, orthorhombic and A-site disordered LCMO demonstrate broadened phase transitions as well as mesoscopic phase separation for T<<TC. The unique La/Ca ordering suppresses cation mismatch stress within one super-cell, a~1.55 nm, enhancing electronic homogeneity. Phase separation scenario seems not to be a unique mechanism for CMR as very large CMR=500 % was also observed in A-site ordered films.
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Submitted 14 March, 2006; v1 submitted 15 December, 2005;
originally announced December 2005.
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Fluctuations of Single Confined Actin Filaments
Authors:
Sarah Köster,
Holger Stark,
Thomas Pfohl,
Jan Kierfeld
Abstract:
This paper withdrawn since it has been published in an updated version in Biophysical Reviews and Letter Vol. 2, No. 2 (2007) 155-166
This paper withdrawn since it has been published in an updated version in Biophysical Reviews and Letter Vol. 2, No. 2 (2007) 155-166
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Submitted 18 July, 2007; v1 submitted 21 September, 2005;
originally announced September 2005.
