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Evidence for local spots of viscous electron flow in graphene at moderate mobility
Authors:
Sayanti Samaddar,
Jeff Strasdas,
Kevin Janßen,
Sven Just,
Tjorven Johnsen,
Zhenxing Wang,
Burkay Uzlu,
Sha Li,
Daniel Neumaier,
Marcus Liebmann,
Markus Morgenstern
Abstract:
Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate…
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Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.
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Submitted 16 January, 2022; v1 submitted 21 March, 2021;
originally announced March 2021.
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Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
Authors:
Markus Morgenstern,
Christian Pauly,
Jens Kellner,
Marcus Liebmann,
Marco Pratzer,
Gustav Bihlmayer,
Markus Eschbach,
Lukacz Plucinski,
Sebastian Otto,
Bertold Rasche,
Michael Ruck,
Manuel Richter,
Sven Just,
Felix Luepke,
Bert Voigtlaender
Abstract:
We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover no…
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We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.
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Submitted 2 February, 2020;
originally announced February 2020.
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Parasitic conduction channels in topological insulator thin films
Authors:
Sven Just,
Felix Lüpke,
Vasily Cherepanov,
F. Stefan Tautz,
Bert Voigtländer
Abstract:
Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transpo…
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Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the interior of the not-ideally insulating TI film, the interface layer to the substrate, and the substrate itself. To be able to take advantage of the auspicious transport properties of the TSS, the influence of the parasitic parallel channels on the total current transport has to be minimized. Because the conductivity of the interior (bulk) of the thin TI film is difficult to access by measurements, we propose here an approach for calculating the mobile charge carrier concentration in the TI film. To this end, we calculate the near-surface band bending using parameters obtained experimentally from surface-sensitive measurements, namely (gate-dependent) four-point resistance measurements and angle-resolved photoelectron spectroscopy (ARPES). While in most cases another parameter in the calculations, i.e. the concentration of unintentional dopants inside the thin TI film, is unknown, it turns out that in the thin-film limit the band bending is largely independent of the dopant concentration in the film. Thus, a well-founded estimate of the total mobile charge carrier concentration and the conductivity of the interior of the thin TI film proves possible. Since the interface and substrate conductivities can be measured by a four-probe conductance measurement prior to the deposition of the TI film, the total contribution of all parasitic channels, and therefore also the contribution of the vitally important TSS, can be determined reliably.
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Submitted 6 April, 2020; v1 submitted 25 August, 2019;
originally announced August 2019.
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Surface Conductivity of Si(100) and Ge(100) Surfaces Determined from Four-Point Transport Measurements Using an Analytical N-Layer Conductance Model
Authors:
Sven Just,
Helmut Soltner,
Stefan Korte,
Vasily Cherepanov,
Bert Voigtländer
Abstract:
An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-…
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An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-surface band-bending to model very precisely the measured four-point resistance on the surface of a specific sample and to extract a value for the surface conductivity. For describing four-point measurements on sample geometries with mixed 2D-3D conduction channels often a very simple parallel-circuit model has so far been used in the literature, but the application of this model is limited, as there are already significant deviations, when it is compared to the lowest possible case of the N-layer model, i.e. the 3-layer model. Furthermore, the N-layer model is applied to published distance-dependent four-point resistance measurements obtained with a multi-tip scanning tunneling microscope (STM) on Germanium(100) and Silicon(100) with different bulk doping concentrations resulting in the determination of values for the surface conductivities of these materials.
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Submitted 7 October, 2016;
originally announced October 2016.
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Surface and Step Conductivities on Si(111) Surfaces
Authors:
Sven Just,
Marcus Blab,
Stefan Korte,
Vasily Cherepanov,
Helmut Soltner,
Bert Voigtländer
Abstract:
Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface c…
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Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as function of the rotation angle. In total this combined approach leads to an atomic step conductivity of $σ_\mathrm{step} = (29 \pm 9)$ $\mathrmΩ^{-1} \mathrm{m}^{-1}$ and to a step-free surface conductivity of $σ_\mathrm{surf} = (9 \pm 2) \cdot 10^{-6}\,\mathrmΩ^{-1}/\square$ for the Si(111)-(7$\times$7) surface.
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Submitted 6 May, 2015;
originally announced May 2015.
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Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy
Authors:
S. Just,
S. Zimmermann,
V. Kataev,
B. Buechner,
M. Pratzer,
M. Morgenstern
Abstract:
Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is considerably lower than the ion fluence implying that most of the defects are single vacancies. The vacancies are characterized by scanning tunneling spectroscopy…
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Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is considerably lower than the ion fluence implying that most of the defects are single vacancies. The vacancies are characterized by scanning tunneling spectroscopy (STS) on graphene and HOPG exhibiting a peak close to the Fermi level. The peak persists after air exposure up to 180 min, albeit getting broader. After air exposure for less than 60 min, electron spin resonance (ESR) at 9.6 GHz is performed. For an ion flux of 10/nm^2, we find a signal corresponding to a g-factor of 2.001-2.003 and a spin density of 1-2 spins/nm^2. The ESR signal consists of a mixture of a Gaussian and a Lorentzian of equal weight exhibiting a width down to 0.17 mT, which, however, depends on details of the sample preparation. The g-factor anisotropy is about 0.02%. Temperature dependent measurements reveal antiferromagnetic correlations with a Curie-Weiss temperature of -10 K. Albeit the electrical conductivity of graphene is significantly reduced by ion bombardment, the spin resonance induced change in conductivity is below 10^{-5}.
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Submitted 6 October, 2014; v1 submitted 23 July, 2014;
originally announced July 2014.
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Evidence for topological band inversion of the phase change material Ge2Sb2Te5
Authors:
Christian Pauly,
Marcus Liebmann,
Alessandro Giussani,
Jens Kellner,
Sven Just,
Jaime Sánchez-Barriga,
Emile Rienks,
Oliver Rader,
Raffaella Calarco,
Gustav Bihlmayer,
Markus Morgenstern
Abstract:
We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density…
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We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic KH stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z_2 topological invariant nu_0 and away from Gamma for non-trivial nu_0. Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E_F.
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Submitted 28 November, 2013; v1 submitted 27 August, 2013;
originally announced August 2013.
