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Trion quantum coherence in site-controlled pyramidal InGaAs quantum dots
Authors:
R. A. Barcan,
I. Samaras,
K. Barr,
G. Juska,
E. Pelucchi,
K. G. Lagoudakis
Abstract:
Deterministically positioned pyramidal InGaAs quantum dots (QDs) exhibit exceptional quantum properties, making them highly promising candidates for scalable on-chip quantum information processing. In this work, we investigate the coherent dynamics of positively charged excitons under the influence of strong magnetic fields in the Faraday configuration. Pyramidal quantum dots exhibit a fourfold sp…
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Deterministically positioned pyramidal InGaAs quantum dots (QDs) exhibit exceptional quantum properties, making them highly promising candidates for scalable on-chip quantum information processing. In this work, we investigate the coherent dynamics of positively charged excitons under the influence of strong magnetic fields in the Faraday configuration. Pyramidal quantum dots exhibit a fourfold splitting of the charged excitons even in the Faraday configuration, giving rise to an optically addressable double-Λ system akin to self-assembled quantum dots in oblique magnetic fields. Here, we investigate ultrafast complete coherent control of the trion to ground state transition utilizing advanced optical resonant excitation techniques and we observe quantum coherence over timescales that are similar to other prominent quantum dot platforms. These results pave the way towards establishing site-controlled pyramidal InGaAs QDs as scalable platforms for quantum information processing, expanding the reach of coherent control to new quantum systems.
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Submitted 25 June, 2025;
originally announced June 2025.
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Self-aligned pillar arrays embedding site-controlled single quantum dots for enhanced non-classical light emission
Authors:
Gediminas Juska,
Simone Varo,
Nicola Maraviglia,
John O'Hara,
Salvador Medina,
Luca Colavecchi,
Francesco Mattana,
Armando Trapala,
Michael Schmidt,
Agnieszka Gocalinska,
Emanuele Pelucchi
Abstract:
This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the non-planar surface morphology of pyramidal QD samples to define dielectric masks self - aligned to the QD positions. The mask size, and consequently the lateral dimensi…
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This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the non-planar surface morphology of pyramidal QD samples to define dielectric masks self - aligned to the QD positions. The mask size, and consequently the lateral dimensions of the pillars, is precisely controlled through a chemical mechanical polishing step, obviating the need for any additional lithography step for creating the pillar. This fabrication technique offers several key advantages, including precise control over the pillar sites, and fully deterministic embedding of QD structures. The functionality of the structures was validated by integrating single In0.25Ga0.75As QDs - upon two-photon excitation of the biexciton state, the emission of single and polarization-entangled photon pairs was observed. Additionally, an extra fabrication step to deposit dome-like structures atop the pillars was demonstrated, effectively enhancing light extraction efficiency up to 12%.
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Submitted 19 March, 2025;
originally announced March 2025.
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Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Authors:
R. A. Barcan,
I. Samaras,
K. Barr,
G. Juska,
E. Pelucchi,
K. G. Lagoudakis
Abstract:
We investigate site-controlled In$_{0.25}$Ga$_{0.75}$As quantum dots in (111)B GaAs pyramidal recesses as spin qubits. Combining scanning confocal cryomicroscopy, magneto-photoluminescence studies and resonant excitation, we identify and isolate a positively charged exciton with a hole-spin in its ground state. Application of a strong 5 T magnetic field parallel to the growth axis, induces a fourf…
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We investigate site-controlled In$_{0.25}$Ga$_{0.75}$As quantum dots in (111)B GaAs pyramidal recesses as spin qubits. Combining scanning confocal cryomicroscopy, magneto-photoluminescence studies and resonant excitation, we identify and isolate a positively charged exciton with a hole-spin in its ground state. Application of a strong 5 T magnetic field parallel to the growth axis, induces a fourfold splitting of the energy levels of the positively charged exciton creating an optically addressable double-lambda system. We combine weak above-band and resonant excitation to demonstrate spin pumping and high-fidelity spin initialization through all four optical transitions and study the system behavior as a function of the resonant driving strength showing the existence of a robust spin that can be optically pumped and initialized. These results demonstrate the potential of these quantum dots for precise spin manipulation and their relevance for future quantum hardware.
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Submitted 7 March, 2025;
originally announced March 2025.
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Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation
Authors:
Stefano T. Moroni,
Simone Varo,
Gediminas Juska,
Tung-Hsun Chung,
Agnieszka Gocalinska,
Emanuele Pelucchi
Abstract:
We characterized stacked double-pyramidal quantum dots which showed biexciton binding energies close to zero by means of photoluminescence and cross-correlation measurements. It was possible to obtain a sequence of two photons with (nearly) the same energy from the biexciton-exciton-ground state cascade, as corroborated by a basic rate-equation model. This type of two-photon emission is both of re…
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We characterized stacked double-pyramidal quantum dots which showed biexciton binding energies close to zero by means of photoluminescence and cross-correlation measurements. It was possible to obtain a sequence of two photons with (nearly) the same energy from the biexciton-exciton-ground state cascade, as corroborated by a basic rate-equation model. This type of two-photon emission is both of relevance for fundamental quantum information theory studies as well as for more exotic applicative fields such as quantum biology.
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Submitted 24 October, 2018;
originally announced October 2018.
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Statistical study of stacked/coupled site-controlled pyramidal quantum dots and their excitonic properties
Authors:
S. T. Moroni,
T. H. Chung,
G. Juska,
A. Gocalinska,
E. Pelucchi
Abstract:
We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more than two nominally highly symmetric QDs. For each, the effect of the interaction between QDs is studied by characterizing a large number of QDs through…
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We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more than two nominally highly symmetric QDs. For each, the effect of the interaction between QDs is studied by characterizing a large number of QDs through photoluminescence spectroscopy. A clear red-shift of the emission energy is observed together with a change in the orientation of its polarization, suggesting an increasing interaction between the QDs. Finally we show how stacked QDs can help influencing the charging of the excitonic complexes.
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Submitted 31 August, 2017;
originally announced August 2017.
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Engineering of selective carrier injection in patterned arrays of single-quantum-dot entangled photon light-emitting diodes
Authors:
T-H. Chung,
G. Juska,
S. T. Moroni,
A. Pescaglini,
A. Gocalinska,
E. Pelucchi
Abstract:
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-…
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Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons, with the potential to encode quantum information. The design of the sources is based on quantum dots grown in micron-sized pyramidal recesses along the crystallographic direction (111)B theoretically ensuring high symmetry of the quantum dots - the condition for actual bright entangled photon emission. A selective electric injection scheme in these non-planar structures allows obtaining a high density of light-emitting diodes, with some producing entangled photon pairs also violating Bell's inequality. Compatibility with semiconductor fabrication technology, good reproducibility and control of the position make these devices attractive candidates for integrated photonic circuits for quantum information processing.
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Submitted 19 July, 2017;
originally announced July 2017.
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Tuning InP self-assembled quantum structures to telecom wavelength: a versatile original InP(As) nanostructure "workshop"
Authors:
E. E. Mura,
A. Gocalinska,
G. Juska,
S. T. Moroni,
A. Pescaglini,
E. Pelucchi
Abstract:
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data a…
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The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.
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Submitted 21 March, 2017;
originally announced March 2017.
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Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
Authors:
Stefano T. Moroni,
Valeria Dimastrodonato,
Tung-Hsun Chung,
Gediminas Juska,
Agnieszka Gocalinska,
Dimitri D. Vvedensky,
Emanuele Pelucchi
Abstract:
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and ad…
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We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion equations, one for each facet in the system, accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature, concentration, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In$_{0.12}$Ga$_{0.88}$As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In$_{0.25}$Ga$_{0.75}$As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.
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Submitted 11 April, 2016;
originally announced April 2016.
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Single pairs of time-bin entangled photons
Authors:
Marijn A. M. Versteegh,
Michael E. Reimer,
Aafke A. van den Berg,
Gediminas Juska,
Valeria Dimastrodonato,
Agnieszka Gocalinska,
Emanuele Pelucchi,
Val Zwiller
Abstract:
Time-bin entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates at most one time-bin entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are the…
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Time-bin entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates at most one time-bin entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are then converted, without loss of entanglement strength, into single time-bin entangled photon pairs.
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Submitted 7 July, 2015;
originally announced July 2015.
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Conditions for entangled photon emission from (111)B site-controlled Pyramidal quantum dots
Authors:
G. Juska,
E. Murray,
V. Dimastrodonato,
T. H. Chung,
S. Moroni,
A. Gocalinska,
E. Pelucchi
Abstract:
A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already reported in Juska et al. (Nat. Phot. 7, 527, 2013). Moreover, some of the limitations for a higher density of entangled photon emitters are addressed. Among these i…
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A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already reported in Juska et al. (Nat. Phot. 7, 527, 2013). Moreover, some of the limitations for a higher density of entangled photon emitters are addressed. Among these issues are (1) a remaining small fine-structure splitting and (2) an effective QD charging under non-resonant excitation conditions, which strongly reduce the number of useful biexciton-exciton recombination events. A possible solution of the charging problem is investigated exploiting a dual-wavelength excitation technique, which allows a gradual QD charge tuning from strongly negative to positive and, eventually, efficient detection of entangled photons from QDs, which would be otherwise ineffective under a single-wavelength (non-resonant) excitation.
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Submitted 13 February, 2015;
originally announced February 2015.
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Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses
Authors:
G. Juska,
V. Dimastrodonato,
L. O. Mereni,
T. H. Chung,
A. Gocalinska,
E. Pelucchi,
B. Van Hattem,
M. Ediger,
P. Corfdir
Abstract:
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, i…
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A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Secondly, the formation of a formerly unidentified type of InGaAs nanostructures - three corner quantum dots - is demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects.
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Submitted 2 July, 2014;
originally announced July 2014.
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Unusual nanostructures of "lattice matched" InP on AlInAs
Authors:
A. Gocalinska,
M. Manganaro,
G. Juska,
V. Dimastrodonato,
K. Thomas,
B. A. Joyce,
J. Zhang,
D. D. Vvedensky,
E. Pelucchi
Abstract:
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase s…
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We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology
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Submitted 10 April, 2014;
originally announced April 2014.
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The impact of hot charge carrier mobility on photocurrent losses in polymer-based solar cells
Authors:
Bronson Philippa,
Martin Stolterfoht,
Paul L. Burn,
Gytis Juška,
Paul Meredith,
Ronald D. White,
Almantas Pivrikas
Abstract:
A typical signature of charge extraction in disordered organic systems is dispersive transport, which implies a distribution of charge carrier mobilities that negatively impact on device performance. Dispersive transport has been commonly understood to originate from a time-dependent mobility of hot charge carriers that reduces as excess energy is lost during relaxation in the density of states. I…
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A typical signature of charge extraction in disordered organic systems is dispersive transport, which implies a distribution of charge carrier mobilities that negatively impact on device performance. Dispersive transport has been commonly understood to originate from a time-dependent mobility of hot charge carriers that reduces as excess energy is lost during relaxation in the density of states. In contrast, we show via photon energy, electric field and film thickness independence of carrier mobilities that the dispersive photocurrent in organic solar cells originates not from the loss of excess energy during hot carrier thermalization, but rather from the loss of carrier density to trap states during transport. Our results emphasize that further efforts should be directed to minimizing the density of trap states, rather than controlling energetic relaxation of hot carriers within the density of states.
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Submitted 25 July, 2014; v1 submitted 2 March, 2014;
originally announced March 2014.
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Towards quantum dot arrays of entangled photon emitters
Authors:
Gediminas Juska,
Valeria Dimastrodonato,
Lorenzo O. Mereni,
Agnieszka Gocalinska,
Emanuele Pelucchi
Abstract:
We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction achievable by other quantum dot systems. Entanglement is attested by a two-photon polarization state density matrix and the parameters obtained from it. Emitters sh…
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We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction achievable by other quantum dot systems. Entanglement is attested by a two-photon polarization state density matrix and the parameters obtained from it. Emitters showing fidelities up to 0.721+-0.043 were found.
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Submitted 7 February, 2014;
originally announced February 2014.
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Semiconductor nanostructures engineering: Pyramidal quantum dots
Authors:
E. Pelucchi,
V. Dimastrodonato,
L. O. Mereni,
G. Juska,
A. Gocalinska
Abstract:
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow competition and give evidence for strong perspectives in quantum information applications for this system. We examine the possibility of generating entangled and in…
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Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow competition and give evidence for strong perspectives in quantum information applications for this system. We examine the possibility of generating entangled and indistinguishable photons, together with the need for the implementation of a, regrettably still missing, strategy for electrical control.
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Submitted 25 April, 2012;
originally announced April 2012.
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Wettability and "petal effect" of GaAs native oxides
Authors:
A. Gocalinska,
K. Gradkowski,
V. Dimastrodonato,
L. O. Mereni,
G. Juska,
G. Huyet,
E. Pelucchi
Abstract:
We discuss unreported transitions of oxidized GaAs surfaces between (super)hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90deg and high adhesive force were observed for several air-aged epitaxial samples grown under different conditions as well as on epi-ready wafers. Regardless of the morphologies of the surface, superhydrophilicity of oxygen-pla…
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We discuss unreported transitions of oxidized GaAs surfaces between (super)hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90deg and high adhesive force were observed for several air-aged epitaxial samples grown under different conditions as well as on epi-ready wafers. Regardless of the morphologies of the surface, superhydrophilicity of oxygen-plasma treated samples was observed, an effect disappearing with storage time. Reproducible hydrophobicity was likewise observed, as expected, after standard HCl surface etching. The relation between surface oxides and hydrophobic/hydrophilic behavior is discussed.
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Submitted 24 August, 2011;
originally announced August 2011.
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Impact of Nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by Metalorganic Vapour Phase Epitaxy
Authors:
V. Dimastrodonato,
L. O. Mereni,
G. Juska,
E. Pelucchi
Abstract:
We report on some surprising optical properties of diluted nitride InGaAs_(1-y)N_y /GaAs (y<<1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/ biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral…
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We report on some surprising optical properties of diluted nitride InGaAs_(1-y)N_y /GaAs (y<<1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/ biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots.
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Submitted 16 August, 2011;
originally announced August 2011.
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Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates
Authors:
L. O. Mereni,
V. Dimastrodonatoa,
G. Juskaa,
E. Pelucchia L. O. Mereni,
V. Dimastrodonatoa,
G. Juskaa,
E. Pelucchi
Abstract:
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 μm edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fine structure splitting (FSS). The investigation of about 40 single quantum dots revealed two main points: (1) the values of this parameter are very simila…
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InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 μm edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fine structure splitting (FSS). The investigation of about 40 single quantum dots revealed two main points: (1) the values of this parameter are very similar from dot to dot, proving again the uniformity of Pyramidal QD properties, (2) there is a little chance, in the sample investigated, to find a dot with natural zero splitting, but the values found (the mean being 13 μeV) should always guarantee the capability of restoring the degeneracy with some corrective technique (e.g. application of a small magnetic field).
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Submitted 1 April, 2011;
originally announced April 2011.
