Showing 1–3 of 3 results for author: Joyce, B A

Unusual nanostructures of "lattice matched" InP on AlInAs

Authors: A. Gocalinska, M. Manganaro, G. Juska, V. Dimastrodonato, K. Thomas, B. A. Joyce, J. Zhang, D. D. Vvedensky, E. Pelucchi

Abstract: We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase s… ▽ More We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology △ Less

Submitted 10 April, 2014; originally announced April 2014.

Journal ref: Applied Physics Letters 104, 141606 (2014)

Monte Carlo simulation of GaAs(001) homoepitaxy

Authors: M. Itoh, G. R. Bell, B. A. Joyce, D. D. Vvedensky

Abstract: By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structural transformation before adopting the proper beta2(2x4) reconstruction. By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structural transformation before adopting the proper beta2(2x4) reconstruction. △ Less

Submitted 21 April, 2000; originally announced April 2000.

Comments: 6 pages, 7 figures, talk given at 5th International Conference on Computational Physics (Kanazawa, Japan, 1999). Progress of Theoretical Physics, Supplement, to appear. Related articles can be found at http://wwwacty.phys.sci.osaka-u.ac.jp/~makoto/

Journal ref: Prog. Theo. Phys, Suppl. 138, 90 (2000).

Re-entrant Layer-by-Layer Etching of GaAs(001)

Authors: T. Kaneko, P. Šmilauer, B. A. Joyce, T. Kawamura, D. D. Vvedensky

Abstract: We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temp… ▽ More We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration. △ Less

Submitted 21 March, 1995; originally announced March 1995.

Comments: 11 pages, REVTeX 3.0. Physical Review Letters, in press.

Report number: IC-DDV-94-008