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Chemical enhancement of superconductivity in LaRu3Si2 with mode-selective coupling between kagome phonons and flat bands
Authors:
Ryo Misawa,
Markus Kriener,
Rinsuke Yamada,
Ryota Nakano,
Milena Jovanovic,
Leslie M. Schoop,
Max Hirschberger
Abstract:
In kagome metals, flat electronic bands induced by frustrated hopping are a platform for strong electron correlations. In particular, a selective coupling of flat band states to certain kagome phonon modes is proposed as a universal origin of superconductivity in this material class. Here, we investigate the superconductivity in the kagome system LaRu$_3$(Si$_{1-x}$Ge$_x$)$_2$ by chemical pressure…
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In kagome metals, flat electronic bands induced by frustrated hopping are a platform for strong electron correlations. In particular, a selective coupling of flat band states to certain kagome phonon modes is proposed as a universal origin of superconductivity in this material class. Here, we investigate the superconductivity in the kagome system LaRu$_3$(Si$_{1-x}$Ge$_x$)$_2$ by chemical pressure tuning while preserving the Ru-$4d$ states that constitute the kagome flat bands. We observe a sizable enhancement in the density of states up to $x = 0.07$, as determined by the specific heat, with a concomitant increase in the superconducting transition temperature $T_\mathrm{c}$. Ge-dopants induce a uniaxial lattice expansion along the $c$-axis. Our first-principles calculations suggest that this mitigates the detrimental effect of hybridization between kagome layers and reduces the dispersion of the Ru-$4d_{x^2-y^2}$ flat band. The calculated chemical potential moves closer to the maximum in the energy-dependent density of states. Our result is consistent with a theoretical prediction of tunable flat band superconductivity in LaRu$_3$Si$_2$ by mode-selective coupling between specific kagome phonons and the Ru-$d_{x^2-y^2}$ orbitals.
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Submitted 14 April, 2025; v1 submitted 28 March, 2025;
originally announced March 2025.
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A Recipe for Flat Bands in Pyrochlore Materials: A Chemist's Perspective
Authors:
Fatmagül Katmer,
Milena Jovanovic,
Jennifer Cano,
Lukas Muechler,
Leslie M. Schoop
Abstract:
Materials in which atoms are arranged in a pyrochlore lattice have found renewed interest, as, at least theoretically, orbitals on those lattices can form flat bands. However, real materials often do not behave according to theoretical models, which is why there has been a dearth of pyrochlore materials exhibiting flat band physics. Here we examine the conditions under which ideal 'pyrochlore band…
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Materials in which atoms are arranged in a pyrochlore lattice have found renewed interest, as, at least theoretically, orbitals on those lattices can form flat bands. However, real materials often do not behave according to theoretical models, which is why there has been a dearth of pyrochlore materials exhibiting flat band physics. Here we examine the conditions under which ideal 'pyrochlore bands' can exist in real materials and how to have those close to the Fermi level. We find that the simple model used in the literature does not apply to the bands at the Fermi level in real pyrochlore materials. However, surprisingly, certain oxide compounds which have oxygen orbitals inside the pyrochlore tetrahedra do exhibit near-ideal pyrochlore bands near the Fermi level. We explain this observation by a generalized tight-binding model including the oxygen orbitals. We further classify all known pyrochlore materials based on their crystal structure, band structure, and chemical characteristics and propose materials to study in future experiments.
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Submitted 24 March, 2025;
originally announced March 2025.
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Materials Expert-Artificial Intelligence for Materials Discovery
Authors:
Yanjun Liu,
Milena Jovanovic,
Krishnanand Mallayya,
Wesley J. Maddox,
Andrew Gordon Wilson,
Sebastian Klemenz,
Leslie M. Schoop,
Eun-Ah Kim
Abstract:
The advent of material databases provides an unprecedented opportunity to uncover predictive descriptors for emergent material properties from vast data space. However, common reliance on high-throughput ab initio data necessarily inherits limitations of such data: mismatch with experiments. On the other hand, experimental decisions are often guided by an expert's intuition honed from experiences…
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The advent of material databases provides an unprecedented opportunity to uncover predictive descriptors for emergent material properties from vast data space. However, common reliance on high-throughput ab initio data necessarily inherits limitations of such data: mismatch with experiments. On the other hand, experimental decisions are often guided by an expert's intuition honed from experiences that are rarely articulated. We propose using machine learning to "bottle" such operational intuition into quantifiable descriptors using expertly curated measurement-based data. We introduce "Materials Expert-Artificial Intelligence" (ME-AI) to encapsulate and articulate this human intuition. As a first step towards such a program, we focus on the topological semimetal (TSM) among square-net materials as the property inspired by the expert-identified descriptor based on structural information: the tolerance factor. We start by curating a dataset encompassing 12 primary features of 879 square-net materials, using experimental data whenever possible. We then use Dirichlet-based Gaussian process regression using a specialized kernel to reveal composite descriptors for square-net topological semimetals. The ME-AI learned descriptors independently reproduce expert intuition and expand upon it. Specifically, new descriptors point to hypervalency as a critical chemical feature predicting TSM within square-net compounds. Our success with a carefully defined problem points to the "machine bottling human insight" approach as promising for machine learning-aided material discovery.
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Submitted 5 December, 2023;
originally announced December 2023.
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Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal
Authors:
Ratnadwip Singha,
Kirstine J. Dalgaard,
Dmitry Marchenko,
Maxim Krivenkov,
Emile D. L. Rienks,
Milena Jovanovic,
Samuel M. L. Teicher,
Jiayi Hu,
Tyger H. Salters,
Jingjing Lin,
Andrei Varykhalov,
N. Phuan Ong,
Leslie M. Schoop
Abstract:
Colossal magnetoresistance (MR) is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. Though topological semimetals also show large MR, its origin and nature are completely different. Here, we show that in the highly electron doped region, the Dirac semimetal CeSbTe demonstrates sim…
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Colossal magnetoresistance (MR) is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. Though topological semimetals also show large MR, its origin and nature are completely different. Here, we show that in the highly electron doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb$_{0.11}$Te$_{1.90}$ hosts multiple charge density wave (CDW) modulation-vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor-metal-like transition, which results in a colossal negative MR. Moreover, signatures of the coupling between the CDW and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.
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Submitted 10 August, 2022;
originally announced August 2022.
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A Class of Magnetic Topological Material Candidates with Hypervalent Bi Chains
Authors:
Jason F. Khoury,
Bingzheng Han,
Milena Jovanovic,
Ratnadwip Singha,
Xiaoyu Song,
Raquel Queiroz,
N. Phuan Ong,
Leslie M. Schoop
Abstract:
The link between crystal and electronic structure is crucial for understanding structure-property relations in solid-state chemistry. In particular, it has been instrumental in understanding topological materials, where electrons behave differently than they would in conventional solids. Herein, we identify 1D Bi chains as a structural motif of interest for topological materials. We focus on Sm…
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The link between crystal and electronic structure is crucial for understanding structure-property relations in solid-state chemistry. In particular, it has been instrumental in understanding topological materials, where electrons behave differently than they would in conventional solids. Herein, we identify 1D Bi chains as a structural motif of interest for topological materials. We focus on Sm$_3$ZrBi$_5$, a new quasi-one-dimensional (1D) compound in the Ln$_3$MPn$_5$ (Ln = lanthanide; M = metal; Pn = pnictide) family that crystallizes in the P$6_{3}$/mcm space group. Density functional theory calculations indicate a complex, topologically non-trivial electronic structure that changes significantly in the presence of spin-orbit coupling. Magnetic measurements show a quasi-1D antiferromagnetic structure with two magnetic transitions at 11.7 and 10.7 K that are invariant to applied field up to 9 T, indicating magnetically frustrated spins. Heat capacity, electrical, and thermal transport measurements support this claim and suggest complex scattering behavior in Sm$_3$ZrBi$_5$. This work highlights 1D chains as an unexplored structural motif for identifying topological materials, as well as the potential for rich physical phenomena in the Ln$_3$MPn$_5$ family.
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Submitted 26 May, 2022; v1 submitted 23 March, 2022;
originally announced March 2022.
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TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility
Authors:
Ratnadwip Singha,
Fang Yuan,
Guangming Cheng,
Tyger H. Salters,
Yuzki M. Oey,
Graciela V. Villalpando,
Milena Jovanovic,
Nan Yao,
Leslie M. Schoop
Abstract:
Van der Waals (vdW) materials are an indispensable part of functional device technology due to their versatile physical properties and ease of exfoliating to the low-dimensional limit. Among all the compounds investigated so far, the search for magnetic vdW materials has intensified in recent years, fueled by the realization of magnetism in two dimensions (2D). However, metallic magnetic vdW syste…
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Van der Waals (vdW) materials are an indispensable part of functional device technology due to their versatile physical properties and ease of exfoliating to the low-dimensional limit. Among all the compounds investigated so far, the search for magnetic vdW materials has intensified in recent years, fueled by the realization of magnetism in two dimensions (2D). However, metallic magnetic vdW systems are still uncommon. In addition, they rarely host high-mobility charge carriers, which is an essential requirement for high-speed electronic applications. Another shortcoming of 2D magnets is that they are highly air sensitive. Using chemical reasoning, we introduce TaCo2Te2 as an air-stable, high-mobility, magnetic vdW material. It has a layered structure, which consists of Peierls distorted Co chains and a large vdW gap between the layers. We find that the bulk crystals can be easily exfoliated and the obtained thin flakes are robust to ambient conditions after four months of monitoring using an optical microscope. We also observe signatures of canted antiferromagntic behavior at low-temperature. TaCo2Te2 shows a metallic character and a large, non-saturating, anisotropic magnetoresistance. Furthermore, our Hall data and quantum oscillation measurements reveal the presence of both electron- and hole-type carriers and their high mobility.
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Submitted 23 November, 2021;
originally announced November 2021.
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Catalogue of Flat-Band Stoichiometric Materials
Authors:
Nicolas Regnault,
Yuanfeng Xu,
Ming-Rui Li,
Da-Shuai Ma,
Milena Jovanovic,
Ali Yazdani,
Stuart S. P. Parkin,
Claudia Felser,
Leslie M. Schoop,
N. Phuan Ong,
Robert J. Cava,
Luis Elcoro,
Zhi-Da Song,
B. Andrei Bernevig
Abstract:
Topological electronic flatten bands near or at the Fermi level are a promising avenue towards unconventional superconductivity and correlated insulating states. However, the related experiments are mostly limited to the engineered materials, such as moire systems. Here we present a catalogue of all the three-dimensional stoichiometric materials with flat bands around the Fermi level that exist in…
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Topological electronic flatten bands near or at the Fermi level are a promising avenue towards unconventional superconductivity and correlated insulating states. However, the related experiments are mostly limited to the engineered materials, such as moire systems. Here we present a catalogue of all the three-dimensional stoichiometric materials with flat bands around the Fermi level that exist in nature. We consider 55,206 materials from the Inorganic Crystal Structure Database catalogued using the Topological Quantum Chemistry website which provides their structural parameters, space group (SG), band structure, density of states and topological characterization. We combine several direct signatures and properties of band flatness to a high-throughput analysis of all crystal structures. In particular, we identify materials hosting line-graph or bipartite sublattices - either in two or three dimensions - likely leading to flat bands. From this trove of information, we create the Materials Flatband Database website, a powerful search engine for future theoretical and experimental studies. We use it to extract a curated list of 2,379 materials, with among them 345 promising candidates, potentially hosting flat bands whose charge centers are not strongly localized on the atomic sites. We showcase five representative materials: KAg[CN]2 in SG 163 $(P\bar{3}1c)$, Pb2Sb2O7 in SG 227 $(Fd\bar{3}m)$, Rb2CaH4 in SG 139 $(I4/mmm)$, Ca2NCl in SG 166 $(R\bar{3}m)$ and WO3 in SG 221 $(Pm\bar{3}m)$. We provide a theoretical explanation for the origin of their flat bands close to the Fermi energy using the $S$-matrix method introduced in a parallel work [Calugaru et al., Nature Physics 18, 185 (2022)].
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Submitted 15 June, 2022; v1 submitted 9 June, 2021;
originally announced June 2021.
