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Unraveling the dynamics of conductive filaments in MoS${_2}$ based memristors by operando transmission electron microscopy
Authors:
Ke Ran,
Janghyun Jo,
Sofía Cruces,
Zhenxing Wang,
Rafal E. Dunin-Borkowski,
Joachim Mayer,
Max C. Lemme
Abstract:
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D) materials-based memristive devices, which is crucial to tailor their operating regimes and improve reliability and variability. Here, we investigate lateral memristive dev…
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Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D) materials-based memristive devices, which is crucial to tailor their operating regimes and improve reliability and variability. Here, we investigate lateral memristive devices composed of 2D layered molybdenum disulfide (MoS${_2}$) with palladium (Pd) and silver (Ag) electrodes. We visualized the formation and migration of Ag conductive filaments (CFs) between the two electrodes under external bias voltage and their complete dissolution upon reversing the bias voltage polarity. The CFs exhibited a wide range of sizes, ranging from several Ångströms to tens of nanometers, and followed diverse pathways: along the MoS${_2}$ surfaces, within the van der Waals gap between MoS${_2}$ layers, and through the spacing between MoS${_2}$ bundles. Notably, the Ag electrode functioned as a reservoir for the CFs, as evidenced by the shrinking and growing of the Ag electrode upon switching. Our method enabled correlating the current-voltage responses with real-time TEM imaging, offering insights into failed and anomalous switching behavior, and providing clarity on the cycle-to-cycle variabilities. Our findings provide solid evidence for the electrochemical metallization mechanism, elucidate the formation dynamics of CFs, and reveal key parameters influencing the switching performance. Our approach can be extended to investigate similar memristive devices.
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Submitted 3 April, 2025;
originally announced April 2025.
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Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Authors:
Sofía Cruces,
Mohit D. Ganeriwala,
Jimin Lee,
Ke Ran,
Janghyun Jo,
Lukas Völkel,
Dennis Braun,
Bárbara Canto,
Enrique G. Marín,
Holger Kalisch,
Michael Heuken,
Andrei Vescan,
Rafal Dunin-Borkowski,
Joachim Mayer,
Andrés Godoy,
Alwin Daus,
Max C. Lemme
Abstract:
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on…
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Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ~0.16 V and ~0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in-situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semi-classical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms.
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Submitted 3 April, 2025;
originally announced April 2025.
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Nonvolatile Electric Control of Antiferromagnet CrSBr
Authors:
Junhyeon Jo,
Samuel Mañas-Valero,
Eugenio Coronado,
Fèlix Casanova,
Marco Gobbi,
Luis E. Hueso
Abstract:
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antife…
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van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200 % change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.
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Submitted 21 February, 2025;
originally announced February 2025.
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Nature of the ferromagnet-paramagnet transition in Y$_{1-x}$Ca$_{x}$TiO$_{3}$
Authors:
S. Hameed,
I. Khayr,
J. Joe,
G. Q. Zhao,
Y. Cai,
K. M. Kojima,
S. Chi,
T. J. Williams,
M. Matsuda,
Y. J. Uemura,
M. Greven
Abstract:
Neutron scattering, magnetometry, and muon spin rotation ($μ$SR) measurements were performed to investigate the magnetic order and spin dynamics across the ferromagnet-to-paramagnet transition in the hole-doped Mott insulator Y$_{1-x}$Ca$_x$TiO$_3$. We find that the transition proceeds through a volume-wise phase separation into ferromagnetic and paramagnetic regions. Spin fluctuations with a char…
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Neutron scattering, magnetometry, and muon spin rotation ($μ$SR) measurements were performed to investigate the magnetic order and spin dynamics across the ferromagnet-to-paramagnet transition in the hole-doped Mott insulator Y$_{1-x}$Ca$_x$TiO$_3$. We find that the transition proceeds through a volume-wise phase separation into ferromagnetic and paramagnetic regions. Spin fluctuations with a characteristic timescale of $\sim$ 0.1 $μ$s, as detected via $μ$SR, are observed to appear at Ca concentrations $x \geq 0.10$. The magnetic phase separation, accompanied by a modest dynamic response, represents a novel behavior in Mott systems near the loss of magnetic order. It is linked to a previously observed insulator-metal transition and the associated electronic phase separation into hole-poor Mott insulating and hole-rich metallic phases for $0 < x < 0.50$. In particular, the $x$-dependence of the paramagnetic volume fraction strongly correlates with that of the volume fraction of the hole-rich metallic phase. The spin-wave spectra reveal a doping-induced crossover from isotropic to two-dimensional anisotropic exchange interactions, reflecting substantial changes in the orbital state with increasing Ca content.
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Submitted 17 February, 2025;
originally announced February 2025.
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Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
Authors:
Mayank Sharma,
Garen Avedissian,
Witold Skowroński,
Junhyeon Jo,
Andrey Chuvilin,
Fèlix Casanova,
Marco Gobbi,
Luis E. Hueso
Abstract:
The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exc…
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The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.
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Submitted 27 November, 2024;
originally announced November 2024.
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Stochastic process model for interfacial gap of purely normal elastic rough surface contact
Authors:
Yang Xu,
Junki Joe,
Xiaobao Li,
Yunong Zhou
Abstract:
In purely normal elastic rough surface contact problems, Persson's theory of contact shows that the evolution of the probability density function (PDF) of contact pressure with the magnification is governed by a diffusion equation. However, there is no partial differential equation describing the evolution of the PDF of the interfacial gap. In this study, we derive a convection--diffusion equation…
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In purely normal elastic rough surface contact problems, Persson's theory of contact shows that the evolution of the probability density function (PDF) of contact pressure with the magnification is governed by a diffusion equation. However, there is no partial differential equation describing the evolution of the PDF of the interfacial gap. In this study, we derive a convection--diffusion equation in terms of the PDF of the interfacial gap based on stochastic process theory, as well as the initial and boundary conditions. A finite difference method is developed to numerically solve the partial differential equation. The predicted PDF of the interfacial gap agrees well with that by Green's Function Molecular Dynamics (GFMD) and other variants of Persson's theory of contact at high load ranges. At low load ranges, the obvious deviation between the present work and GFMD is attributed to the overestimated mean interfacial gap and oversimplified magnification-dependent diffusion coefficient used in the present model. As one of its direct application, we show that the present work can effectively solve the adhesive contact problem under the DMT limit. The current study provides an alternative methodology for determining the PDF of the interfacial gap and a unified framework for solving the complementary problem of random contact pressure and random interfacial gap based on stochastic process theory.
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Submitted 18 August, 2024;
originally announced August 2024.
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Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane
Authors:
Joon Young Park,
Young Jae Shin,
Jeacheol Shin,
Jehyun Kim,
Janghyun Jo,
Hyobin Yoo,
Danial Haei,
Chohee Hyun,
Jiyoung Yun,
Robert M. Huber,
Arijit Gupta,
Kenji Watanabe,
Takashi Taniguchi,
Wan Kyu Park,
Hyeon Suk Shin,
Miyoung Kim,
Dohun Kim,
Gyu-Chul Yi,
Philip Kim
Abstract:
Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materi…
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Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface.
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Submitted 30 May, 2024;
originally announced May 2024.
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Controlling spin-orbit coupling to tailor type-II Dirac bands
Authors:
Nguyen Huu Lam,
Phuong Lien Nguyen,
Byoung Ki Choi,
Trinh Thi Ly,
Ganbat Duvjir,
Tae Gyu Rhee,
Yong Jin Jo,
Tae Heon Kim,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Younghun Hwang,
Young Jun Chang,
Jaekwang Lee,
Jungdae Kim
Abstract:
NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dir…
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NiTe2, a type-II Dirac semimetal with strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density-functional theory (DFT) calculations, we report that the strength of spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.
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Submitted 22 October, 2023;
originally announced October 2023.
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Characterization of Broadband Purcell Filters with Compact Footprint for Fast Multiplexed Superconducting Qubit Readout
Authors:
Seong Hyeon Park,
Gahyun Choi,
Gyunghun Kim,
Jaehyeong Jo,
Bumsung Lee,
Geonyoung Kim,
Kibog Park,
Yong-Ho Lee,
Seungyong Hahn
Abstract:
Engineering the admittance of external environments connected to superconducting qubits is essential, as increasing the measurement speed introduces spontaneous emission loss to superconducting qubits, known as Purcell loss. Here, we report a broad bandwidth Purcell filter design within a small footprint, which effectively suppresses Purcell loss without losing the fast measurement speed. We chara…
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Engineering the admittance of external environments connected to superconducting qubits is essential, as increasing the measurement speed introduces spontaneous emission loss to superconducting qubits, known as Purcell loss. Here, we report a broad bandwidth Purcell filter design within a small footprint, which effectively suppresses Purcell loss without losing the fast measurement speed. We characterize the filter's frequency response at 4.3 K and also estimate Purcell loss suppression by finite-element-method simulations of superconducting planar circuit layouts with the proposed filter design. The measured bandwidth is over 790 MHz within 0.29 mm$^2$ while the estimated lifetime enhancement can be over 5000 times with multiple Purcell filters. The presented filter design is expected to be easily integrated on existing superconducting quantum circuits for fast and multiplexed readout without occupying large footprint.
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Submitted 27 December, 2023; v1 submitted 20 October, 2023;
originally announced October 2023.
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Effect of random antiferromagnetic exchange on the spin waves in a three-dimensional Heisenberg ferromagnet
Authors:
S. Hameed,
Z. Wang,
D. M. Gautreau,
J. Joe,
K. P. Olson,
S. Chi,
P. M. Gehring,
T. Hong,
D. M. Pajerowski,
T. J. Williams,
Z. Xu,
M. Matsuda,
T. Birol,
R. M. Fernandes,
M. Greven
Abstract:
Neutron scattering is used to study spin waves in the three-dimensional Heisenberg ferromagnet YTiO$_3$, with spin-spin exchange disorder introduced $via$ La-substitution at the Y site. No significant changes are observed in the spin-wave dispersion up to a La concentration of 20%. However, a strong broadening of the spectrum is found, indicative of shortened spin-wave lifetimes. Density-functiona…
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Neutron scattering is used to study spin waves in the three-dimensional Heisenberg ferromagnet YTiO$_3$, with spin-spin exchange disorder introduced $via$ La-substitution at the Y site. No significant changes are observed in the spin-wave dispersion up to a La concentration of 20%. However, a strong broadening of the spectrum is found, indicative of shortened spin-wave lifetimes. Density-functional theory calculations predict minimal changes in exchange constants as a result of average structural changes due to La substitution, in agreement with the data. The absence of significant changes in the spin-wave dispersion, the considerable lifetime effect, and the reduced ordered magnetic moment previously observed in the La-substituted system are qualitatively captured by an isotropic, nearest-neighbor, three-dimensional Heisenberg ferromagnet model with random antiferromagnetic exchange. We therefore establish Y$_{1-x}$La$_x$TiO$_3$ as a model system to study the effect of antiferromagnetic spin-exchange disorder in a three-dimensional Heisenberg ferromagnet.
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Submitted 7 May, 2023;
originally announced May 2023.
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Tradeoff of generalization error in unsupervised learning
Authors:
Gilhan Kim,
Hojun Lee,
Junghyo Jo,
Yongjoo Baek
Abstract:
Finding the optimal model complexity that minimizes the generalization error (GE) is a key issue of machine learning. For the conventional supervised learning, this task typically involves the bias-variance tradeoff: lowering the bias by making the model more complex entails an increase in the variance. Meanwhile, little has been studied about whether the same tradeoff exists for unsupervised lear…
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Finding the optimal model complexity that minimizes the generalization error (GE) is a key issue of machine learning. For the conventional supervised learning, this task typically involves the bias-variance tradeoff: lowering the bias by making the model more complex entails an increase in the variance. Meanwhile, little has been studied about whether the same tradeoff exists for unsupervised learning. In this study, we propose that unsupervised learning generally exhibits a two-component tradeoff of the GE, namely the model error and the data error -- using a more complex model reduces the model error at the cost of the data error, with the data error playing a more significant role for a smaller training dataset. This is corroborated by training the restricted Boltzmann machine to generate the configurations of the two-dimensional Ising model at a given temperature and the totally asymmetric simple exclusion process with given entry and exit rates. Our results also indicate that the optimal model tends to be more complex when the data to be learned are more complex.
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Submitted 12 September, 2023; v1 submitted 10 March, 2023;
originally announced March 2023.
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Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects
Authors:
Junhyeon Jo,
Francesco Calavalle,
Beatriz Martín-García,
Fèlix Casanova,
Andrey Chuvilin,
Luis E. Hueso,
Marco Gobbi
Abstract:
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic p…
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The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic properties, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, we demonstrate the emergence of spinterface effects at the interface between flakes of the prototypical layered magnetic metal Fe3GeTe2 and thin films of paramagnetic Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe3GeTe2, indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering by proximity and pin the magnetization reversal of Fe3GeTe2. The effect is strongest for a Fe3GeTe2 thickness of 20 nm, for which the exchange bias field reaches -840 Oe and is measurable up to approximately 110 K. This value compares very favorably with previous exchange bias fields reported for Fe3GeTe2 in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials.
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Submitted 24 February, 2023; v1 submitted 21 February, 2023;
originally announced February 2023.
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Magnetic resonance study of rare-earth titanates
Authors:
Ana Najev,
Sajna Hameed,
Alexey Alfonsov,
Joseph Joe,
Vladislav Kataev,
Martin Greven,
Miroslav Požek,
Damjan Pelc
Abstract:
We present a nuclear magnetic resonance (NMR) and electron spin resonance (ESR) study of rare-earth titanates derived from the spin-1/2 Mott insulator YTiO$_3$. Measurements of single-crystalline samples of (Y,Ca,La)TiO$_3$ in a wide range of isovalent substitution (La) and hole doping (Ca) reveal several unusual features in the paramagnetic state of these materials. $^{89}$Y NMR demonstrates a cl…
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We present a nuclear magnetic resonance (NMR) and electron spin resonance (ESR) study of rare-earth titanates derived from the spin-1/2 Mott insulator YTiO$_3$. Measurements of single-crystalline samples of (Y,Ca,La)TiO$_3$ in a wide range of isovalent substitution (La) and hole doping (Ca) reveal several unusual features in the paramagnetic state of these materials. $^{89}$Y NMR demonstrates a clear discrepancy between the static and dynamic local magnetic susceptibilities, with deviations from Curie-Weiss behavior far above the Curie temperature $T_C$. No significant changes are observed close to $T_C$, but a suppression of fluctuations is detected in the NMR spin-lattice relaxation time at temperatures of about $3\times T_C$. Additionally, the nuclear spin-spin relaxation rate shows an unusual peak in dependence on temperature for all samples. ESR of the unpaired Ti electron shows broad resonance lines at all temperatures and substitution/doping levels, which we find to be caused by short electronic spin-lattice relaxation times. We model the relaxation as an Orbach process that involves a low-lying electronic excited state, which enables the determination of the excited-state gap from the temperature dependence of the ESR linewidths. We ascribe the small gap to Jahn-Teller splitting of the two lower Ti $t_{2g}$ orbitals. The value of the gap closely follows $T_C$ and is consistent with the temperatures at which deviations from Curie-Weiss fluctuations are observed in NMR. These results provide insight into the interplay between orbital and spin degrees of freedom in rare-earth titanates and indicate that full orbital degeneracy lifting is associated with ferromagnetic order.
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Submitted 23 November, 2022; v1 submitted 22 November, 2022;
originally announced November 2022.
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Optically Induced Picosecond Lattice Compression in the Dielectric Component of a Strongly Coupled Ferroelectric/Dielectric Superlattice
Authors:
Deepankar Sri Gyan,
Hyeon Jun Lee,
Youngjun Ahn,
Jerome Carnis,
Tae Yeon Kim,
Sanjith Unithrattil,
Jun Young Lee,
Sae Hwan Chun,
Sunam Kim,
Intae Eom,
Minseok Kim,
Sang-Youn Park,
Kyung Sook Kim,
Ho Nyung Lee,
Ji Young Jo,
Paul G. Evans
Abstract:
Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice…
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Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice consistent with depolarization-field screening driven by the photoexcited charge carriers. The depolarization-field-screening-driven expansion is separate from a photoacoustic pulse launched from the bottom electrode on which the superlattice was epitaxially grown. The distribution of diffracted intensity of superlattice x-ray reflections indicates that the depolarization-field-screening-induced strain includes a photoinduced expansion in the ferroelectric BaTiO3 and a contraction in CaTiO3. The magnitude of expansion in BaTiO3 layers is larger than the contraction in CaTiO3. The difference in the magnitude of depolarization-field-screening-driven strain in the BaTiO3 and CaTiO3 components can arise from the contribution of the oxygen octahedral rotation patterns at the BaTiO3/CaTiO3 interfaces to the polarization of CaTiO3. The depolarization-field-screening-driven polarization reduction in the CaTiO3 layers points to a new direction for the manipulation of polarization in the component layers of a strongly coupled ferroelectric/dielectric superlattice.
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Submitted 3 November, 2022;
originally announced November 2022.
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Local inversion-symmetry breaking in a bismuthate high-$T_c$ superconductor
Authors:
S. Griffitt,
M. Spaić,
J. Joe,
Z. Anderson,
D. Zhai,
M. J. Krogstad,
R. Osborn,
D. Pelc,
M. Greven
Abstract:
The doped perovskite BaBiO$_3$ exhibits a maximum superconducting transition temperature ($T_c$) of 34 K and was the first high-$T_c$ oxide to be discovered, yet pivotal questions regarding the nature of both the metallic and superconducting states remain unresolved. Although it is generally thought that superconductivity in the bismuthates is of the conventional s-wave type, the pairing mechanism…
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The doped perovskite BaBiO$_3$ exhibits a maximum superconducting transition temperature ($T_c$) of 34 K and was the first high-$T_c$ oxide to be discovered, yet pivotal questions regarding the nature of both the metallic and superconducting states remain unresolved. Although it is generally thought that superconductivity in the bismuthates is of the conventional s-wave type, the pairing mechanism is still debated, with strong electron-phonon coupling and bismuth valence or bond disproportionation possibly playing a role. Here we use diffuse x-ray scattering and Monte Carlo modeling to study the local structure of Ba$_{1-x}$K$_x$BiO$_3$ across its insulator-metal boundary. We find no evidence for either long- or short-range disproportionation, which resolves a major conundrum, as disproportionation and the related polaronic effects are likely not relevant for the metallic and superconducting states. Instead, we uncover nanoscale structural correlations that break inversion symmetry, which has far-reaching implications for the electronic physics, including the pairing mechanism. This unexpected finding furthermore establishes that the bismuthates belong to the broader classes of materials with hidden spin-orbit coupling and a tendency towards inversion-breaking displacements.
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Submitted 3 September, 2022;
originally announced September 2022.
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Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface
Authors:
Wonho Song,
Jung-Yong Lee,
Junhyung Kim,
Jinyoung Park,
Jaehyeong Jo,
Eunseok Hyun,
Jiwan Kim,
Daejin Eom,
Gahyun Choi,
Kibog Park
Abstract:
The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide…
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The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.
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Submitted 20 August, 2022; v1 submitted 16 August, 2022;
originally announced August 2022.
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Flexoelectric control of a ferromagnetic metal
Authors:
Wei Peng,
Se Young Park,
Chang Jae Roh,
Junsik Mun,
Hwiin Ju,
Jinkwon Kim,
Eun Kyo Ko,
Zhengguo Liang,
Sungsoo Hahn,
Jinfeng Zhang,
Liang Si,
Yong Jin Jo,
Tae Heon Kim,
Changyoung Kim,
Lingfei Wang,
Miyoung Kim,
Jong Seok Lee,
Tae Won Noh,
Daesu Lee
Abstract:
Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experiment…
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Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experimentally unexplored in metals. Here, using heteroepitaxy and atomic-scale imaging, we show that flexoelectric fields can polarize a metallic oxide SrRuO3 with unexpectedly large Ru off-center displacements. We also observe that the flexoelectrically induced polar state of SrRuO3 leads to sizable lattice expansion, similar to the electrostrictive expansion caused by ionic displacements in dielectrics under an external electric field. We further suggest that flexoelectrically driven Ru off-centering promotes strong coupling between lattice and electronic degrees of freedom, possibly enhancing the ferromagnetism of SrRuO3. Beyond conventional electric fields, flexoelectric fields may universally engender novel electronic states and their control via pure atomic displacements in a nondestructive and fast manner.
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Submitted 7 March, 2022;
originally announced March 2022.
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Structural evidence for ultrafast polarization rotation in ferroelectric/dielectric superlattice nanodomains
Authors:
Hyeon Jun Lee,
Youngjun Ahn,
Samuel D. Marks,
Eric C. Landahl,
Shihao Zhuang,
M. Humed Yusuf,
Matthew Dawber,
Jun Young Lee,
Tae Yeon Kim,
Sanjith Unithrattil,
Sae Hwan Chun,
Sunam Kim,
Intae Eom,
Sang-Yeon Park,
Kyung Sook Kim,
Sooheyong Lee,
Ji Young Jo,
Jiamian Hu,
Paul G. Evans
Abstract:
Weakly coupled ferroelectric/dielectric superlattice thin film heterostructures exhibit complex nanoscale polarization configurations that arise from a balance of competing electrostatic, elastic, and domain-wall contributions to the free energy. A key feature of these configurations is that the polarization can locally have a significant component that is not along the thin-film surface normal di…
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Weakly coupled ferroelectric/dielectric superlattice thin film heterostructures exhibit complex nanoscale polarization configurations that arise from a balance of competing electrostatic, elastic, and domain-wall contributions to the free energy. A key feature of these configurations is that the polarization can locally have a significant component that is not along the thin-film surface normal direction, while maintaining zero net in-plane polarization. PbTiO3/SrTiO3 thin-film superlattice heterostructures on a conducting SrRuO3 bottom electrode on SrTiO3 have a room-temperature stripe nanodomain pattern with nanometer-scale lateral period. Ultrafast time-resolved x-ray free electron laser diffraction and scattering experiments reveal that above-bandgap optical pulses induce rapidly propagating acoustic pulses and a perturbation of the domain diffuse scattering intensity arising from the nanoscale stripe domain configuration. With 400 nm optical excitation, two separate acoustic pulses are observed: a high-amplitude pulse resulting from strong optical absorption in the bottom electrode and a weaker pulse arising from the depolarization field screening effect due to absorption directly within the superlattice. The picosecond scale variation of the nanodomain diffuse scattering intensity is consistent with a larger polarization change than would be expected due to the polarization-tetragonality coupling of uniformly polarized ferroelectrics. The polarization change is consistent instead with polarization rotation facilitated by the reorientation of the in-plane component of the polarization at the domain boundaries of the striped polarization structure. The complex steady-state configuration within these ferroelectric heterostructures leads to polarization rotation phenomena that have been previously available only through the selection of bulk crystal composition.
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Submitted 8 July, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Growth and characterization of large (Y,La)TiO$_3$ and (Y,Ca)TiO$_3$ single crystals
Authors:
S. Hameed,
J. Joe,
L. R. Thoutam,
J. Garcia-Barriocanal,
B. Yu,
G. Yu,
S. Chi,
T. Hong,
T. J. Williams,
J. W. Freeland,
P. M. Gehring,
Z. Xu,
M. Matsuda,
B. Jalan,
M. Greven
Abstract:
The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We…
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The Mott-insulating rare-earth titanates (RTiO$_3$, R being a rare-earth ion) are an important class of materials that encompasses interesting spin-orbital phases as well as ferromagnet-antiferromagnet and insulator-metal transitions. The growth of these materials has been plagued by difficulties related to overoxidation, which arises from a strong tendency of Ti$^{3+}$ to oxidize to Ti$^{4+}$. We describe our efforts to grow sizable single crystals of YTiO$_3$ and its La-substituted and Ca-doped variants with the optical travelling-solvent floating-zone technique. We present sample characterization $via$ chemical composition analysis, magnetometry, charge transport, neutron scattering, x-ray absorption spectroscopy and x-ray magnetic circular dichroism to understand macroscopic physical property variations associated with overoxidation. Furthermore, we demonstrate a good signal-to-noise ratio in inelastic magnetic neutron scattering measurements of spin-wave excitations. A superconducting impurity phase, found to appear in Ca-doped samples at high doping levels, is identified as TiO.
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Submitted 18 June, 2021;
originally announced June 2021.
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Uniaxial strain control of bulk ferromagnetism in rare-earth titanates
Authors:
Ana Najev,
Sajna Hameed,
Dominique M. Gautreau,
Zhentao Wang,
Joseph Joe,
Miroslav Požek,
Turan Birol,
Rafael M. Fernandes,
Martin Greven,
Damjan Pelc
Abstract:
The perovskite rare-earth titanates are model Mott insulators with magnetic ground states that are very sensitive to structural distortions. These distortions couple strongly to the orbital degrees of freedom and, in principle, it should be possible to tune the superexchange and the magnetic transition with strain. We investigate the representative system (Y,La,Ca)TiO$_3$, which exhibits low cryst…
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The perovskite rare-earth titanates are model Mott insulators with magnetic ground states that are very sensitive to structural distortions. These distortions couple strongly to the orbital degrees of freedom and, in principle, it should be possible to tune the superexchange and the magnetic transition with strain. We investigate the representative system (Y,La,Ca)TiO$_3$, which exhibits low crystallographic symmetry and no structural instabilities. From magnetic susceptibility measurements of the Curie temperature, we demonstrate direct, reversible and continuous control of ferromagnetism by influencing the TiO$_6$ octahedral tilts and rotations with uniaxial strain. The relative change in $T_C$ as a function of strain is well described by ab initio calculations, which provides detailed understanding of the complex interactions among structural, orbital and magnetic properties in rare-earth titanates. The demonstrated manipulation of octahedral distortions opens up far-reaching possibilities for investigations of electron-lattice coupling, competing ground states, and magnetic quantum phase transitions in a wide range of quantum materials.
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Submitted 20 April, 2022; v1 submitted 14 May, 2021;
originally announced May 2021.
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Machine learning aided materials design platform for predicting the mechanical properties of Na-ion solid-state electrolytes
Authors:
Junho Jo,
Eunseong Choi,
Minseon Kim,
Kyoungmin Min
Abstract:
Na-ion solid-state electrolytes (Na-SSE) exhibit high potential for electrical energy storage owing to their high energy densities and low manufacturing cost. However, their mechanical properties critical to maintain structural stability at the interface are still insufficiently understood. In this study, a machine learning based regression model was developed for predicting the mechanical propert…
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Na-ion solid-state electrolytes (Na-SSE) exhibit high potential for electrical energy storage owing to their high energy densities and low manufacturing cost. However, their mechanical properties critical to maintain structural stability at the interface are still insufficiently understood. In this study, a machine learning based regression model was developed for predicting the mechanical properties of Na-SSEs. As a training set, 12,361 materials were obtained from a well-known materials database (Materials Project) and were represented with their respective chemical and structural descriptors. The developed surrogate model exhibited a remarkable accuracy (R2 score) of 0.72 and 0.87, with a mean absolute error of 11.8 GPa and 15.3 GPa for the shear and bulk modulus, respectively. This model was then applied to predict the mechanical properties of 2,432 Na-SSEs, the properties of which have been validated with first principles calculations. Finally, the optimization process was performed to develop an ideal materials screening platform by adding the new minimized dataset, wherein the prediction uncertainty is reduced. We believe that the platform proposed in this study can accelerate the search for Na-SSEs with ideal mechanical properties at minimum cost.
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Submitted 22 April, 2021;
originally announced April 2021.
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Full molecular dynamics simulations of molecular liquids for single-beam spectrally controlled two-dimensional Raman spectroscopy
Authors:
Ju-Yeon Jo,
Yoshitaka Tanimura
Abstract:
Single-beam spectrally controlled (SBSC) two-dimensional (2D) Raman spectroscopy is a unique 2D vibrational measurement technique utilizing trains of short pulses that are generated from a single broadband pulse by pulse shaping. This approach overcomes the difficulty of 2D Raman spectroscopy in dealing with small-signal extraction and avoids complicated low-order cascading effects, thus providing…
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Single-beam spectrally controlled (SBSC) two-dimensional (2D) Raman spectroscopy is a unique 2D vibrational measurement technique utilizing trains of short pulses that are generated from a single broadband pulse by pulse shaping. This approach overcomes the difficulty of 2D Raman spectroscopy in dealing with small-signal extraction and avoids complicated low-order cascading effects, thus providing a new possibility for measuring the intramolecular and intermolecular modes of molecular liquids using fifth-order 2D Raman spectroscopy. Recently, for quantitatively investigating the mode-mode coupling mechanism, Hurwitz et al. [Optics Express 28, 3803 (2020)] have developed a new pulse design for this measurement to separate the contributions of the fifth- and third-order polarizations, which are often overlapped in the original single-beam measurements. Here, we describe a method for simulating these original measurements and the new 2D Raman measurements on the basis of a second-order response function approach. We carry out full molecular dynamics simulations for carbon tetrachloride and liquid water using an equilibrium-nonequilibrium hybrid algorithm, with the aim of explaining the key features of the SBSC 2D Raman spectroscopic method from a theoretical point of view. The predicted signal profiles and intensities provide valuable information that can be applied to 2D spectroscopy experiments, allowing them to be carried out more efficiently.
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Submitted 19 March, 2021;
originally announced March 2021.
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Two-component electronic phase separation in the doped Mott insulator Y$_{1-x}$Ca$_{x}$TiO$_{3}$
Authors:
S. Hameed,
J. Joe,
D. M. Gautreau,
J. W. Freeland,
T. Birol,
M. Greven
Abstract:
One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively researched, but its governing mechanisms have yet to be fully understood. Several theoretical proposals aimed to elucidate the nature of the transition have be…
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One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively researched, but its governing mechanisms have yet to be fully understood. Several theoretical proposals aimed to elucidate the nature of the transition have been put forth, a notable one being phase separation and an associated percolation-induced transition. In the present work, we study the prototypical doped Mott-insulating rare-earth titanate YTiO$_3$, in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y$_{1-x}$Ca$_x$TiO$_3$ with $0 \leq x \leq 0.5$, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+$U$ calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the Mott-insulating $x = 0$ and metallic $x \sim 0.5$ states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the hole-doping-induced insulator-metal transition in Y$_{1-x}$Ca$_x$TiO$_3$ is indeed percolative in nature, and thus of inherent first-order character.
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Submitted 15 March, 2021;
originally announced March 2021.
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Bi$_{2}$Se$_{3}$ thin films heteroepitaxially grown on $α$-RuCl$_{3}$
Authors:
Joon Young Park,
Janghyun Jo,
Jennifer A. Sears,
Young-June Kim,
Miyoung Kim,
Philip Kim,
Gyu-Chul Yi
Abstract:
Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as Bi$_{2}$Se$_{3}$ with a quantum spin liquid (QSL) such as $α$-RuCl$_{3}$ is of great interest for the potential for the chiral Dirac electrons in the TI surface states to inte…
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Combining various two-dimensional materials into novel van der Waals (vdW) heterostructures has been shown to lead to new emergent quantum systems. A novel heterostructure composed of a vdW topological insulator (TI) such as Bi$_{2}$Se$_{3}$ with a quantum spin liquid (QSL) such as $α$-RuCl$_{3}$ is of great interest for the potential for the chiral Dirac electrons in the TI surface states to interact strongly with the fractionalized fermionic spin excitations in the QSL. We report the heteroepitaxial growth of Bi$_{2}$Se$_{3}$ thin films on $α$-RuCl$_{3}$ as well as the characterization of their structural and electrical properties. Bi$_{2}$Se$_{3}$ thin films with an atomically smooth and uniform surface are grown by molecular beam epitaxy. The heterostructure exhibits a preferential epitaxial relationship corresponding to $(5 \times 5)-$Bi$_{2}$Se$_{3}/(2\sqrt{3} \times 2\sqrt{3})R30°-α$-RuCl$_{3}$ commensurate supercells with a periodicity of 1.2 nm. The formation of the superlattice despite a lattice mismatch as large as 60% is attributed to the van der Waals heteroepitaxy. Magnetotransport measurements as a function of temperature show Bi$_{2}$Se$_{3}$ films grown on $α$-RuCl$_{3}$ are heavily $n$-doped, $n_{e}$ ~10$^{14}$ cm$^{-2}$, with mobility $μ$ ~450 cm$^{2}$ V$^{-1}$ s$^{-1}$ at low temperatures.
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Submitted 30 October, 2020;
originally announced October 2020.
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Strong antiferromagnetic proximity coupling in a heterostructured superconductor Sr$_2$VO$_3$FeAs
Authors:
Jong Mok Ok,
Chang Il Kwon,
O. E. Ayala Valenzuela,
Sunghun Kim,
Ross D. McDonald,
Jeehoon Kim,
E. S. Choi,
Woun Kang,
Y. J. Jo,
C. Kim,
E. G. Moon,
Y. K. Kim,
Jun Sung Kim
Abstract:
We report observation of strong magnetic proximity coupling in a heterostructured superconductor Sr$_2$VO$_3$FeAs, determined by the upper critical fields $H_{c2}(T)$ measurements up to 65 T. Using the resistivity and the radio-frequency measurements for both $H \parallel ab$ and $H \parallel c$, we found a strong upward curvature of $H_{c2}^c(T)$, together with a steep increase of…
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We report observation of strong magnetic proximity coupling in a heterostructured superconductor Sr$_2$VO$_3$FeAs, determined by the upper critical fields $H_{c2}(T)$ measurements up to 65 T. Using the resistivity and the radio-frequency measurements for both $H \parallel ab$ and $H \parallel c$, we found a strong upward curvature of $H_{c2}^c(T)$, together with a steep increase of $H_{c2}^{ab}(T)$ near $T_c$, yielding the anisotropic factor $γ_H=H_{c2}^{ab}/H_{c2}^c$ up to $\sim$ 20, the largest value among iron-based superconductors. These are attributed to the Jaccarino-Peter effect, rather than to the multiband effect, due to strong exchange interaction between itinerant Fe spins of the FeAs layers and localized V spins of Mott-insulating SrVO$_3$ layers. These findings provide evidence for strong antiferromagnetic proximity coupling, comparable with the intralayer superexchange interaction of SrVO$_3$ layer and sufficient to induce magnetic frustration in Sr$_2$VO$_3$FeAs.
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Submitted 4 October, 2020;
originally announced October 2020.
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Highly ordered lead-free double perovskite halides by design
Authors:
Chang Won Ahn,
Jae Hun Jo,
Jong Chan Kim,
Hamid Ullah,
Sangkyun Ryu,
Younghun Hwang,
Jin San Choi,
Jongmin Lee,
Sanghan Lee,
Hyoungjeen Jeen,
Young-Han Shin,
Hu Young Jeong,
Ill Won Kim,
Tae Heon Kim
Abstract:
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to no…
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Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity.
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Submitted 29 June, 2020;
originally announced June 2020.
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Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet
Authors:
Junho Seo,
Eun Su An,
Taesu Park,
Soo-Yoon Hwang,
Gi-Yeop Kim,
Kyung Song,
Eunseok Oh,
Minhyuk Choi,
Kenji Watanabe,
Takashi Taniguchi,
Youn Jung Jo,
Han Woong Yeom,
Si-Young Choi,
Ji Hoon Shim,
Jun Sung Kim
Abstract:
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrica…
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Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.
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Submitted 27 April, 2020;
originally announced April 2020.
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Observation of the in-plane magnetic field-induced phase transitions in FeSe
Authors:
Jong Mok Ok,
Chang Il Kwon,
Yoshimitsu Kohama,
Jung Sang You,
Sun Kyu Park,
Ji-hye Kim,
Y. J. Jo,
E. S. Choi,
Koichi Kindo,
Woun Kang,
Ki Seok Kim,
E. G. Moon,
A. Gurevich,
Jun Sung Kim
Abstract:
We investigate the thermodynamic properties of FeSe under the in-plane magnetic fields using torque magnetometry, specific heat, magnetocaloric measurements. Below the upper critical field Hc2, we observed the field-induced anomalies at H1 ~ 15 T and H2 ~ 22 T near H//ab and below a characteristic temperature T* ~ 2 K. The transition magnetic fields H1 and H2 exhibit negligible dependence on both…
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We investigate the thermodynamic properties of FeSe under the in-plane magnetic fields using torque magnetometry, specific heat, magnetocaloric measurements. Below the upper critical field Hc2, we observed the field-induced anomalies at H1 ~ 15 T and H2 ~ 22 T near H//ab and below a characteristic temperature T* ~ 2 K. The transition magnetic fields H1 and H2 exhibit negligible dependence on both temperature and field orientation. This contrasts with the strong temperature and angle dependence of Hc2, suggesting that these anomalies are attributed to the field-induced phase transitions, originating from the inherent spin-density-wave instability of quasiparticles near the superconducting gap minima or possible Flude-Ferrell-Larkin-Ovchinnikov state in the highly spin-polarized Fermi surfaces. Our observations imply that FeSe, an atypical multiband superconductor with extremely small Fermi energies, represents a unique model system for stabilizing unusual superconducting orders beyond the Pauli limit.
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Submitted 27 March, 2020;
originally announced March 2020.
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Thermodynamic cost of synchronizing a population of beating cilia
Authors:
Hyunsuk Hong,
Junghyo Jo,
Changbong Hyeon,
Hyunggyu Park
Abstract:
Synchronization among arrays of beating cilia is one of the emergent phenomena in biological processes at meso-scopic scales. Strong inter-ciliary couplings modify the natural beating frequencies, $ω$, of individual cilia to produce a collective motion that moves around a group frequency $ω_m$. Here we study the thermodynamic cost of synchronizing cilia arrays by mapping their dynamics onto a gene…
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Synchronization among arrays of beating cilia is one of the emergent phenomena in biological processes at meso-scopic scales. Strong inter-ciliary couplings modify the natural beating frequencies, $ω$, of individual cilia to produce a collective motion that moves around a group frequency $ω_m$. Here we study the thermodynamic cost of synchronizing cilia arrays by mapping their dynamics onto a generic phase oscillator model. The model suggests that upon synchronization the mean heat dissipation rate is decomposed into two contributions, dissipation from each cilium's own natural driving force and dissipation arising from the interaction with other cilia, the latter of which can be interpreted as the one produced by a potential with a time-dependent protocol in the framework of our model. The spontaneous phase-synchronization of beating dynamics of cilia induced by strong inter-ciliary coupling is always accompanied with a significant reduction of dissipation for the cilia population, suggesting that organisms as a whole expend less energy by attaining a temporal order. At the level of individual cilia, however, a population of cilia with $|ω|< ω_m$ expend more amount of energy upon synchronization.
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Submitted 23 March, 2020;
originally announced March 2020.
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Synchronization of active rotators interacting with environment
Authors:
Taegeun Song,
Heetae Kim,
Seung-Woo Son,
Junghyo Jo
Abstract:
Multiple organs in a living system respond to environmental changes, and the signals from the organs regulate the physiological environment. Inspired by this biological feedback, we propose a simple autonomous system of active rotators to explain how multiple units are synchronized under a fluctuating environment. We find that the feedback via an environment can entrain rotators to have synchronou…
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Multiple organs in a living system respond to environmental changes, and the signals from the organs regulate the physiological environment. Inspired by this biological feedback, we propose a simple autonomous system of active rotators to explain how multiple units are synchronized under a fluctuating environment. We find that the feedback via an environment can entrain rotators to have synchronous phases for specific conditions. This mechanism is markedly different from the simple entrainment by a common oscillatory external stimulus that is not interacting with systems. We theoretically examine how the phase synchronization depends on the interaction strength between rotators and environment. Furthermore, we successfully demonstrate the proposed model by realizing an analog electric circuit with microelectronic devices. This bio-inspired platform can be used as a sensor for monitoring varying environments, and as a controller for amplifying signals by their feedback-induced synchronization.
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Submitted 5 January, 2020;
originally announced January 2020.
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Non-thermal fluence threshold for femtosecond pulsed x-ray radiation damage in perovskite complex oxide epitaxial heterostructures
Authors:
Hyeon Jun Lee,
Youngjun Ahn,
Samuel D. Marks,
Eric C. Landahl,
Jun Young Lee,
Tae Yeon Kim,
Sanjith Unithrattil,
Ji Young Jo,
Sae Hwan Chun,
Sunam Kim,
Sang-Yeon Park,
Intae Eom,
Carolina Adamo,
Darrell G. Schlom,
Haidan Wen,
Paul G. Evans
Abstract:
Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons…
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Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons $μ$m$^{-2}$ at 9.7 keV photon energy, but remains constant for 1.3 x 10$^{6}$ photons $μ$m$^{-2}$ or less. The damage resulted in the destruction of the BiFeO$_{3}$ thin film within the focal spot area and the formation of a deep cavity penetrating into the STO substrate via the removal of tens of nanometers of material per pulse. The damage threshold occurs at a fluence that is insufficient to heat the absorption volume to the melting point. The morphology of the ablated sample is consistent with fracture rather than melting. Together these results indicate that the damage occurs via a non-thermal process consistent with ultrafast ionization of the absorption volume.
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Submitted 10 December, 2019; v1 submitted 6 December, 2019;
originally announced December 2019.
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Artificially Engineered Nanostrain in Iron Chalcogenide Superconductor Thin Film for Enhancing Supercurrent
Authors:
Sehun Seo,
Heesung Noh,
Ning Li,
Jianyi Jiang,
Chiara Tarantini,
Rouchen Shi,
Soon-Gil Jung,
Myeong Jun Oh,
Mengchao Liu,
Jongmin Lee,
Genda Gu,
Youn Jung Jo,
Tuson Park,
Eric E. Hellstrom,
Peng Gao,
Sanghan Lee
Abstract:
Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, its formation has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial…
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Although nanoscale deformation, such as nanostrain in iron chalcogenide (FeSexTe1-x, FST) thin films, has attracted attention owing to the enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, its formation has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside FST matrix using sequential pulsed laser deposition. Using transmission electron microscopy and geometrical phase analysis, we verified that a trace amount of CeO2 injection forms nanoscale fine defects with a nanostrained region, which has a tensile strain (ezz ~ 0.02) along the c-axis of the FST matrix. The nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 for a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to a pristine FST thin film.
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Submitted 9 September, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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The role of adhesion in contact mechanics
Authors:
M. Ciavarella,
J. Joe,
A. Papangelo,
JR Barber
Abstract:
Adhesive [e.g. van der Waals] forces were not generally taken into account in contact mechanics until 1971, when Johnson, Kendall and Roberts (JKR) generalized Hertz' solution for an elastic sphere using an energetic argument which we now recognize to be analogous to that used in linear elastic fracture mechanics. A significant result is that the load-displacement relation exhibits instabilities i…
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Adhesive [e.g. van der Waals] forces were not generally taken into account in contact mechanics until 1971, when Johnson, Kendall and Roberts (JKR) generalized Hertz' solution for an elastic sphere using an energetic argument which we now recognize to be analogous to that used in linear elastic fracture mechanics. A significant result is that the load-displacement relation exhibits instabilities in which approaching bodies `jump in' to contact, whereas separated bodies `jump out' at a tensile `pull-off force'. The JKR approach has since been widely used in other geometries, but at small length scales or for stiffer materials it is found to be less accurate. In conformal contact problems, other instabilities can occur, characterized by the development of regular patterns of regions of large and small traction. All these instabilities result in differences between loading and unloading curves and consequent hysteretic energy losses. Adhesive contact mechanics has become increasingly important in recent years with the focus on soft materials [which generally permit larger areas of the interacting surfaces to come within the range of adhesive forces], nano-devices and the analysis of bio-systems. Applications are found in nature, such as insect attachment forces, in nano-manufacturing, and more generally in industrial systems involving rubber or polymer contacts. In this paper, we review the strengths and limitations of various methods for analyzing contact problems involving adhesive tractions, with particular reference to the effect of the inevitable roughness of the contacting surfaces.
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Submitted 10 October, 2018;
originally announced October 2018.
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Thermodynamic uncertainty relation of interacting oscillators in synchrony
Authors:
Sangwon Lee,
Changbong Hyeon,
Junghyo Jo
Abstract:
The thermodynamic uncertainty relation sets the minimal bound of the cost-precision trade-off relation for dissipative processes. Examining the dynamics of an internally coupled system that is driven by a constant thermodynamic force, we however find that the trade-off relation of a sub-system is not constrained by the minimal bound of conventional uncertainty relation. We made our point explicit…
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The thermodynamic uncertainty relation sets the minimal bound of the cost-precision trade-off relation for dissipative processes. Examining the dynamics of an internally coupled system that is driven by a constant thermodynamic force, we however find that the trade-off relation of a sub-system is not constrained by the minimal bound of conventional uncertainty relation. We made our point explicit by using an exactly solvable model of interacting oscillators. As the number (N) of interacting oscillators increases, the uncertainty bound of individual oscillators is reduced to 2k_B T/N upon full synchronization under strong coupling. The cost-precision trade-off for the sub-system is particularly relevant for sub-cellular processes where collective dynamics emerges from multiple energy-expending components interacting with each other.
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Submitted 27 April, 2018;
originally announced April 2018.
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Designing Kerr interactions using multiple superconducting qubit types in a single circuit
Authors:
Matthew Elliott,
Jaewoo Joo,
Eran Ginossar
Abstract:
The engineering of Kerr interactions has great potential for quantum information processing applications in multipartite quantum systems and for investigation of many-body physics in a complex cavity-qubit network. We study how coupling multiple different types of superconducting qubits to the same cavity modes can be used to modify the self- and cross-Kerr effects acting on the cavities and demon…
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The engineering of Kerr interactions has great potential for quantum information processing applications in multipartite quantum systems and for investigation of many-body physics in a complex cavity-qubit network. We study how coupling multiple different types of superconducting qubits to the same cavity modes can be used to modify the self- and cross-Kerr effects acting on the cavities and demonstrate that this type of architecture could be of significant benefit for quantum technologies.
Using both analytical perturbation theory results and numerical simulations, we first show that coupling two superconducting qubits with opposite anharmonicities to a single cavity enables the effective self-Kerr interaction to be diminished, while retaining the number splitting effect that enables control and measurement of the cavity field. We demonstrate that this reduction of the self-Kerr effect can maintain the fidelity of coherent states and generalised Schrödinger cat states for much longer than typical coherence times in realistic devices. Next, we find that the cross-Kerr interaction between two cavities can be modified by coupling them both to the same pair of qubit devices. When one of the qubits is tunable in frequency, the strength of entangling interactions between the cavities can be varied on demand, forming the basis for logic operations on the two modes. Finally, we discuss the feasibility of producing an array of cavities and qubits where intermediary and on-site qubits can tune the strength of self- and cross-Kerr interactions across the whole system. This architecture could provide a way to engineer interesting many-body Hamiltonians and a useful platform for quantum simulation in circuit quantum electrodynamics.
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Submitted 12 September, 2017;
originally announced September 2017.
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Optimal control of two qubits via a single cavity drive in circuit quantum electrodynamics
Authors:
Joseph L. Allen,
Robert Kosut,
Jaewoo Joo,
Peter Leek,
Eran Ginossar
Abstract:
Optimization of the fidelity of control operations is of critical importance in the pursuit of fault-tolerant quantum computation. We apply optimal control techniques to demonstrate that a single drive via the cavity in circuit quantum electrodynamics can implement a high-fidelity two-qubit all-microwave gate that directly entangles the qubits via the mutual qubit-cavity couplings. This is perform…
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Optimization of the fidelity of control operations is of critical importance in the pursuit of fault-tolerant quantum computation. We apply optimal control techniques to demonstrate that a single drive via the cavity in circuit quantum electrodynamics can implement a high-fidelity two-qubit all-microwave gate that directly entangles the qubits via the mutual qubit-cavity couplings. This is performed by driving at one of the qubits' frequencies which generates a conditional two-qubit gate, but will also generate other spurious interactions. These optimal control techniques are used to find pulse shapes that can perform this two-qubit gate with high fidelity, robust against errors in the system parameters. The simulations were all performed using experimentally relevant parameters and constraints.
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Submitted 19 April, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Full molecular dynamics simulations of liquid water and carbon tetrachloride for two-dimensional Raman spectroscopy in the frequency domain
Authors:
Ju-Yeon Jo,
Hironobu Ito,
Yoshitaka Tanimura
Abstract:
Frequency-domain two-dimensional Raman signals, which are equivalent to coherent two-dimensional Raman scattering (COTRAS) signals, for liquid water and carbon tetrachloride were calculated using an equilibrium-nonequilibrium hybrid MD simulation algorithm. We elucidate mechanisms governing the 2D signal profiles involving anharmonic mode-mode coupling and the nonlinearities of the polarizability…
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Frequency-domain two-dimensional Raman signals, which are equivalent to coherent two-dimensional Raman scattering (COTRAS) signals, for liquid water and carbon tetrachloride were calculated using an equilibrium-nonequilibrium hybrid MD simulation algorithm. We elucidate mechanisms governing the 2D signal profiles involving anharmonic mode-mode coupling and the nonlinearities of the polarizability for the intermolecular and intramolecular vibrational modes. The predicted signal profiles and intensities can be utilized to analyze recently developed single-beam 2D spectra, whose signals are generated from a coherently controlled pulse, allowing the single-beam measurement to be carried out more efficiently.
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Submitted 19 June, 2016;
originally announced June 2016.
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Nanosecond Phase Transition Dynamics in Compressively Strained Epitaxial BiFeO3
Authors:
Margaret P. Cosgriff,
Pice Chen,
Sung Su Lee,
Hyeon Jun Lee,
Lukasz Kuna,
Krishna C. Pitike,
Lydie Louis,
William D. Parker,
Hiroo Tajiri,
Serge M. Nakhmanson,
Ji Young Jo,
Zuhuang Chen,
Lang Chen,
Paul G. Evans
Abstract:
A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that ap…
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A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that approximately 20% of the volume of a BFO thin film grown on a LaAlO3 substrate can be reproducibly transformed between rhombohedral-like and tetragonal-like phases by electric field pulses with magnitudes up to 2 MV/cm. A transient component, in which the transformation is reversed following the end of the electric field pulse, can transform a similar fraction of the BFO layer and occurs rapidly time scale limited by the charging time constant of the thin film capacitor. The piezoelectric expansion of the tetragonal-like phase leads to a strain of up to 0.1%, with a lower limit of 10 pm/V for the piezoelectric coefficient of this phase. Density functional theory calculations provide insight into the mechanism of the phase transformation showing that imparting a transient strain of this magnitude favors a transformation from rhombohedral-like to tetragonal-like phase.
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Submitted 30 October, 2015;
originally announced October 2015.
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Emergent Universality in Nonequilibrium Processes of Critical Systems
Authors:
Danh-Tai Hoang,
B. Prasanna Venkatesh,
Seungju Han,
Junghyo Jo,
Gentaro Watanabe,
Mahn-Soo Choi
Abstract:
We examine the Jarzynski equality for a quenching process across the critical point of second-order phase transitions, where absolute irreversibility and the effect of finite-sampling of the initial equilibrium distribution arise on an equal footing. We consider the Ising model as a prototypical example for spontaneous symmetry breaking and take into account the finite sampling issue by introducin…
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We examine the Jarzynski equality for a quenching process across the critical point of second-order phase transitions, where absolute irreversibility and the effect of finite-sampling of the initial equilibrium distribution arise on an equal footing. We consider the Ising model as a prototypical example for spontaneous symmetry breaking and take into account the finite sampling issue by introducing a tolerance parameter. For a given tolerance parameter, the deviation from the Jarzynski equality depends onthe reduced coupling constant and the system size. In this work, we show that the deviation from the Jarzynski equality exhibits a universal scaling behavior inherited from the critical scaling laws of second-order phase transitions.
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Submitted 10 August, 2015;
originally announced August 2015.
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Dimerization-Induced Fermi-Surface Reconstruction in IrTe2
Authors:
Man Jin Eom,
Kyoo Kim,
Y. J. Jo,
J. J. Yang,
E. S. Choi,
B. I. Min,
J. -H. Park,
S. -W. Cheong,
Jun Sung Kim
Abstract:
We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induc…
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We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induced by dimerization in both cases. A phase transition to the 1/8 phase with higher dimer density reveals that local instabilities associated with intra- and interdimer couplings are the main driving force for complex dimer formations in IrTe2.
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Submitted 16 December, 2014;
originally announced December 2014.
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Strong ferromagnetic-dielectric coupling in multiferroic Lu2CoMnO6 single crystals
Authors:
N. Lee,
H. Y. Choi,
Y. J. Jo,
M. S. Seo,
S. Y. Park,
Y. J. Choi
Abstract:
We have grown single crystals of multiferroic double-perovskite Lu2CoMnO6 and studied the directional dependence of their magnetic and dielectric properties. The ferromagnetic order emerges below TC ~ 48K along the crystallographic c axis. Dielectric anomaly arises along the b axis at TC, contrary to the polycrystalline work suggesting ferroelectricity along the c axis. Through the strongly couple…
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We have grown single crystals of multiferroic double-perovskite Lu2CoMnO6 and studied the directional dependence of their magnetic and dielectric properties. The ferromagnetic order emerges below TC ~ 48K along the crystallographic c axis. Dielectric anomaly arises along the b axis at TC, contrary to the polycrystalline work suggesting ferroelectricity along the c axis. Through the strongly coupled ferromagnetic and dielectric states, the highly non-linear variation of both dielectric constant and magnetization was achieved in application of magnetic fields. This concurrent tunability provides an efficient route to manipulation of multiple order parameters in multiferroics.
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Submitted 25 March, 2014;
originally announced March 2014.
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Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations
Authors:
Joonbum Park,
E. Kampert,
Kyung-Hwan Jin,
Man Jin Eom,
Jongmok Ok,
E. S. Choi,
F. Wolff-Fabris,
K. D. Lee,
N. Hur,
J. -S Rhyee,
Y. J. Jo,
Seung-Hoon Jhi,
Jun Sung Kim
Abstract:
We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic…
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We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.
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Submitted 7 June, 2013;
originally announced June 2013.
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Quantum Oscillations of the Metallic Triangular-lattice Antiferromagnet PdCrO2
Authors:
Jong Mok Ok,
Y. J. Jo,
K. Kim,
T. Shishidou,
E. S. Choi,
Han-Jin Noh,
T. Oguchi,
B. I. Min,
Jun Sung Kim
Abstract:
We report the de Haas-van Alphen (dHvA) oscillations and first-principle calculations for triangular antiferromagnet PdCrO2 showing unconventional anomalous Hall effect (AHE). The dHvA oscillations in PdCrO2 reveal presence of several 2 dimensional Fermi surfaces of smaller size than found in nonmagnetic PdCoO2. This evidences Fermi surface reconstruction due to the non-collinear 120 antiferromagn…
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We report the de Haas-van Alphen (dHvA) oscillations and first-principle calculations for triangular antiferromagnet PdCrO2 showing unconventional anomalous Hall effect (AHE). The dHvA oscillations in PdCrO2 reveal presence of several 2 dimensional Fermi surfaces of smaller size than found in nonmagnetic PdCoO2. This evidences Fermi surface reconstruction due to the non-collinear 120 antiferromagnetic ordering of the localized Cr, consistent with the first principle calculations. The temperature dependence of dHvA oscillations shows no signature of additional modification of Cr spin structure below TN. Considering that the 120 helical ordering of Cr spins has a zero scalar spin chirality, our results suggest that PdCrO2 is a rare example of the metallic triangular antiferromagnets whose unconventional AHE can not be understood in terms of the spin chirality mechanism.
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Submitted 16 February, 2013;
originally announced February 2013.
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Effect of SiC-Impurity Layer and Growth Temperature on MgB2 Superconducting Tapes Fabricated by HPCVD
Authors:
Mahipal Ranot,
Won Kyung Seong,
Soon-Gil Jung,
Won Nam Kang,
J Joo,
C-J Kim,
B-H Jun,
S. Oh
Abstract:
The influence of SiC-impurity layer and growth temperature on microstructure and superconducting properties were studied for MgB2 superconducting tapes. The pulsed laser deposition (PLD) system was used for the deposition of amorphous SiC-impurity layers on the flexible metallic Cu (001) tapes. The MgB2 superconducting tapes were fabricated by growing MgB2 films on the top of SiC/Cu tapes over a w…
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The influence of SiC-impurity layer and growth temperature on microstructure and superconducting properties were studied for MgB2 superconducting tapes. The pulsed laser deposition (PLD) system was used for the deposition of amorphous SiC-impurity layers on the flexible metallic Cu (001) tapes. The MgB2 superconducting tapes were fabricated by growing MgB2 films on the top of SiC/Cu tapes over a wide temperature range of 460 - 600 °C by using hybrid physical-chemical vapor deposition (HPCVD) system. Among all tapes, the MgB2/SiC/Cu tape deposited at a temperature of 540 °C has the highest Tc of ~ 37.7 K. Scanning electron microscopy (SEM) images revealed the hexagonal shaped MgB2 grains with good connectivity, and their sizes were found to vary with growth temperatures. As compared to MgB2/Cu tapes, the MgB2/SiC/Cu tapes exhibited opposite trend in the dependence of critical current density (Jc) with deposition temperatures. The improved Jc (H) behavior could be explained on the basis of the enhanced flux pinning force density (Fp) for MgB2/SiC/Cu tapes upon increasing growth temperature.
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Submitted 8 December, 2011;
originally announced December 2011.
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Synchronous imaging for rapid visualization of complex vibration profiles in electromechanical microresonators
Authors:
Yoav Linzon,
Daniel J. Joe,
Slava Krylov,
Bojan Ilic,
Juraj Topolancik,
Jeevak M. Parpia,
Halrod G. Craighead
Abstract:
Synchronous imaging is used in dynamic space-domain vibration profile studies of capacitively driven, thin n+ doped poly-silicon microbridges oscillating at rf frequencies. Fast and high-resolution actuation profile measurements of micromachined resonators are useful when significant device nonlinearities are present. For example, bridges under compressive stress near the critical Euler value ofte…
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Synchronous imaging is used in dynamic space-domain vibration profile studies of capacitively driven, thin n+ doped poly-silicon microbridges oscillating at rf frequencies. Fast and high-resolution actuation profile measurements of micromachined resonators are useful when significant device nonlinearities are present. For example, bridges under compressive stress near the critical Euler value often reveal complex dynamics stemming from a state close to the onset of buckling. This leads to enhanced sensitivity of the vibration modes to external conditions, such as pressure, temperatures, and chemical composition, the global behavior of which is conveniently evaluated using synchronous imaging combined with spectral measurements. We performed an experimental study of the effects of high drive amplitude and ambient pressure on the resonant vibration profiles in electrically-driven microbridges near critical buckling. Numerical analysis of electrostatically driven post-buckled microbridges supports the richness of complex vibration dynamics that are possible in such micro-electromechanical devices.
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Submitted 31 October, 2011;
originally announced October 2011.
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Anisotropic Dirac fermions in a Bi square net of SrMnBi2
Authors:
Joonbum Park,
G. Lee,
F. Wolff-Fabris,
Y. Y. Koh,
M. J. Eom,
Y. K. Kim,
M. A. Farhan,
Y. J. Jo,
C. Kim,
J. H. Shim,
J. S. Kim
Abstract:
We report the highly anisotropic Dirac fermions in a Bi square net of SrMnBi2, based on a first principle calculation, angle resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)+ layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, th…
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We report the highly anisotropic Dirac fermions in a Bi square net of SrMnBi2, based on a first principle calculation, angle resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)+ layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi2 is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of ~ 8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provide a new platform that hosts highly anisotropic Dirac fermions.
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Submitted 27 April, 2011;
originally announced April 2011.
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Weibull-type limiting distribution for replicative systems
Authors:
Junghyo Jo,
Jean-Yves Fortin,
M. Y. Choi
Abstract:
The Weibull function is widely used to describe skew distributions observed in nature. However, the origin of this ubiquity is not always obvious to explain. In the present paper, we consider the well-known Galton-Watson branching process describing simple replicative systems. The shape of the resulting distribution, about which little has been known, is found essentially indistinguishable from th…
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The Weibull function is widely used to describe skew distributions observed in nature. However, the origin of this ubiquity is not always obvious to explain. In the present paper, we consider the well-known Galton-Watson branching process describing simple replicative systems. The shape of the resulting distribution, about which little has been known, is found essentially indistinguishable from the Weibull form in a wide range of the branching parameter; this can be seen from the exact series expansion for the cumulative distribution, which takes a universal form. We also find that the branching process can be mapped into a process of aggregation of clusters. In the branching and aggregation process, the number of events considered for branching and aggregation grows cumulatively in time, whereas, for the binomial distribution, an independent event occurs at each time with a given success probability.
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Submitted 15 March, 2011;
originally announced March 2011.
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Lifshitz critical point in the cuprate superconductor YBa2Cu3Oy from high-field Hall effect measurements
Authors:
David LeBoeuf,
Nicolas Doiron-Leyraud,
B. Vignolle,
Mike Sutherland,
B. J. Ramshaw,
J. Levallois,
R. Daou,
Francis Laliberté,
Olivier Cyr-Choinière,
Johan Chang,
Y. J. Jo,
L. Balicas,
Ruixing Liang,
D. A. Bonn,
W. N. Hardy,
Cyril Proust,
Louis Taillefer
Abstract:
The Hall coefficient R_H of the cuprate superconductor YBa2Cu3Oy was measured in magnetic fields up to 60 T for a hole concentration p from 0.078 to 0.152, in the underdoped regime. In fields large enough to suppress superconductivity, R_H(T) is seen to go from positive at high temperature to negative at low temperature, for p > 0.08. This change of sign is attributed to the emergence of an electr…
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The Hall coefficient R_H of the cuprate superconductor YBa2Cu3Oy was measured in magnetic fields up to 60 T for a hole concentration p from 0.078 to 0.152, in the underdoped regime. In fields large enough to suppress superconductivity, R_H(T) is seen to go from positive at high temperature to negative at low temperature, for p > 0.08. This change of sign is attributed to the emergence of an electron pocket in the Fermi surface at low temperature. At p < 0.08, the normal-state R_H(T) remains positive at all temperatures, increasing monotonically as T \to 0. We attribute the change of behaviour across p = 0.08 to a Lifshitz transition, namely a change in Fermi-surface topology occurring at a critical concentration p_L = 0.08, where the electron pocket vanishes. The loss of the high-mobility electron pocket across p_L coincides with a ten-fold drop in the conductivity at low temperature, revealed in measurements of the electrical resistivity $ρ$ at high fields, showing that the so-called metal-insulator crossover of cuprates is in fact driven by a Lifshitz transition. It also coincides with a jump in the in-plane anisotropy of $ρ$, showing that without its electron pocket the Fermi surface must have strong two-fold in-plane anisotropy. These findings are consistent with a Fermi-surface reconstruction caused by a unidirectional spin-density wave or stripe order.
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Submitted 16 February, 2011; v1 submitted 10 September, 2010;
originally announced September 2010.
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Revealing the Exciton Fine Structure in PbSe Nanocrystal Quantum Dots
Authors:
R. D. Schaller,
S. A. Crooker,
D. A. Bussian,
J. M. Pietryga,
J. Joo,
V. I. Klimov
Abstract:
We measure the photoluminescence (PL) lifetime, $τ$, of excitons in colloidal PbSe nanocrystals (NCs) at low temperatures to 270~mK and in high magnetic fields to 15~T. For all NCs (1.3-2.3~nm radii), $τ$ increases sharply below 10~K but saturates by 500~mK. In contrast to the usual picture of well-separated ``bright" and ``dark" exciton states (found, e.g., in CdSe NCs), these dynamics fit remark…
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We measure the photoluminescence (PL) lifetime, $τ$, of excitons in colloidal PbSe nanocrystals (NCs) at low temperatures to 270~mK and in high magnetic fields to 15~T. For all NCs (1.3-2.3~nm radii), $τ$ increases sharply below 10~K but saturates by 500~mK. In contrast to the usual picture of well-separated ``bright" and ``dark" exciton states (found, e.g., in CdSe NCs), these dynamics fit remarkably well to a system having two exciton states with comparable - but small - oscillator strengths that are separated by only 300-900 $μ$eV. Importantly, magnetic fields reduce $τ$ below 10~K, consistent with field-induced mixing between the two states. Magnetic circular dichroism studies reveal exciton g-factors from 2-5, and magneto-PL shows $>$10\% circularly polarized emission.
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Submitted 29 June, 2010;
originally announced June 2010.
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Piezoelectricity in the dielectric component of nanoscale dielectric/ferroelectric superlattices
Authors:
Ji Young Jo,
Rebecca J. Sichel,
Ho Nyung Lee,
Serge M. Nakhmanson,
Eric M. Dufresne,
Paul G. Evans
Abstract:
The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. T…
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The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54 pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.
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Submitted 9 May, 2010;
originally announced May 2010.