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Universal logic with encoded spin qubits in silicon
Authors:
Aaron J. Weinstein,
Matthew D. Reed,
Aaron M. Jones,
Reed W. Andrews,
David Barnes,
Jacob Z. Blumoff,
Larken E. Euliss,
Kevin Eng,
Bryan Fong,
Sieu D. Ha,
Daniel R. Hulbert,
Clayton Jackson,
Michael Jura,
Tyler E. Keating,
Joseph Kerckhoff,
Andrey A. Kiselev,
Justine Matten,
Golam Sabbir,
Aaron Smith,
Jeffrey Wright,
Matthew T. Rakher,
Thaddeus D. Ladd,
Matthew G. Borselli
Abstract:
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-…
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Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.
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Submitted 7 February, 2022;
originally announced February 2022.
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Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
Authors:
R. W. Andrews,
C. Jones,
M. D. Reed,
A. M. Jones,
S. D. Ha,
M. P. Jura,
J. Kerckhoff,
M. Levendorf,
S. Meenehan,
S. T. Merkel,
A. Smith,
B. Sun,
A. J. Weinstein,
M. T. Rakher,
T. D. Ladd,
M. G. Borselli
Abstract:
Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and…
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Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations.
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Submitted 6 December, 2018;
originally announced December 2018.
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Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
Authors:
A. M. Jones,
E. J. Pritchett,
E. H. Chen,
T. E. Keating,
R. W. Andrews,
J. Z. Blumoff,
L. A. De Lorenzo,
K. Eng,
S. D. Ha,
A. A. Kiselev,
S. M. Meenehan,
S. T. Merkel,
J. A. Wright,
L. F. Edge,
R. S. Ross,
M. T. Rakher,
M. G. Borselli,
A. Hunter
Abstract:
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea…
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We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
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Submitted 21 September, 2018;
originally announced September 2018.
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Virtual trions in the photoluminescence of monolayer transition-metal dichalcogenides
Authors:
Dinh Van Tuan,
Aaron M. Jones,
Min Yang,
Xiaodong Xu,
Hanan Dery
Abstract:
Photoluminescence experiments from monolayer transition-metal dichalcogenides often show that the binding energy of trions is conspicuously similar to the energy of optical phonons. This enigmatic coincidence calls into question whether phonons are involved in the radiative recombination process. We address this problem, unraveling an intriguing optical transition mechanism. Its initial state is a…
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Photoluminescence experiments from monolayer transition-metal dichalcogenides often show that the binding energy of trions is conspicuously similar to the energy of optical phonons. This enigmatic coincidence calls into question whether phonons are involved in the radiative recombination process. We address this problem, unraveling an intriguing optical transition mechanism. Its initial state is a localized charge (electron or hole) and delocalized exciton. The final state is the localized charge, phonon and photon. In between, the intermediate state of the system is a virtual trion formed when the localized charge captures the exciton through emission of the phonon. We analyze the difference between radiative recombinations that involve real and virtual trions (i.e., with and without a phonon), providing useful ways to distinguish between the two in experiment.
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Submitted 22 May, 2018;
originally announced May 2018.
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Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces
Authors:
Colin M. Chow,
Hongyi Yu,
Aaron M. Jones,
Jiaqiang Yan,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Xiaodong Xu
Abstract:
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer…
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Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A'1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
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Submitted 14 January, 2017;
originally announced January 2017.
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Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2
Authors:
Colin M. Chow,
Hongyi Yu,
Aaron M. Jones,
John R. Schaibley,
Michael Koehler,
David G. Mandrus,
R. Merlin,
Wang Yao,
Xiaodong Xu
Abstract:
In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscil…
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In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscillatory behavior is also observed in the steady-state emission linewidth and in timeresolved photoluminescence excitation data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.
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Submitted 26 October, 2017; v1 submitted 10 January, 2017;
originally announced January 2017.
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Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor
Authors:
Kyle L. Seyler,
John R. Schaibley,
Pu Gong,
Pasqual Rivera,
Aaron M. Jones,
Sanfeng Wu,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a…
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Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material, and so far, dynamical control of optical nonlinearities remains confined to research labs as a spectroscopic tool. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of 4 at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser, arising from the combination of the two-photon and one-photon valley selection rules that have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.
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Submitted 20 April, 2015;
originally announced April 2015.
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Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth
Authors:
John R. Schaibley,
Todd Karin,
Hongyi Yu,
Jason S. Ross,
Pasqual Rivera,
Aaron M. Jones,
Marie E. Scott,
Jiaqiang Yan,
D. G. Mandrus,
Wang Yao,
Kai-Mei Fu,
Xiaodong Xu
Abstract:
Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly na…
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Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 μeV and <0.2 μeV at low-temperature. These linewidths are more than three orders of magnitude narrower than the photoluminescence and absorption linewidth, and indicate that a component of the exciton relaxation dynamics occurs on timescales longer than 1 ns. The ultra-narrow resonance (<0.2 μeV) emerges with increasing excitation intensity, and implies the existence of a long-lived state whose lifetime exceeds 6 ns.
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Submitted 25 February, 2015;
originally announced February 2015.
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Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus
Authors:
Xiaomu Wang,
Aaron M. Jones,
Kyle L. Seyler,
Vy Tran,
Yichen Jia,
Huan Zhao,
Han Wang,
Li Yang,
Xiaodong Xu,
Fengnian Xia
Abstract:
Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, curr…
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Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, current progress is primarily limited to its thin-film form, and its unique properties at the truly 2D quantum confinement have yet to be demonstrated. Here, we reveal highly anisotropic and tightly bound excitons in monolayer black phosphorus using polarization-resolved photoluminescence measurements at room temperature. We show that regardless of the excitation laser polarization, the emitted light from the monolayer is linearly polarized along the light effective mass direction and centers around 1.3 eV, a clear signature of emission from highly anisotropic bright excitons. In addition, photoluminescence excitation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton binding energy of around 0.9 eV, consistent with theoretical results based on first-principles. The experimental observation of highly anisotropic, bright excitons with exceedingly large binding energy not only opens avenues for the future explorations of many-electron effects in this unusual 2D material, but also suggests a promising future in optoelectronic devices such as on-chip infrared light sources.
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Submitted 6 November, 2014;
originally announced November 2014.
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Magnetic Control of Valley Pseudospin in Monolayer WSe2
Authors:
Grant Aivazian,
Zhirui Gong,
Aaron M Jones,
Rui-Lin Chu,
Jiaqiang Yan,
David G Mandrus,
Chuanwei Zhang,
David Cobden,
Wang Yao,
Xiaodong Xu
Abstract:
Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and th…
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Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.
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Submitted 9 July, 2014;
originally announced July 2014.
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Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
Authors:
Pasqual Rivera,
John R. Schaibley,
Aaron M. Jones,
Jason S. Ross,
Sanfeng Wu,
Grant Aivazian,
Philip Klement,
Nirmal J. Ghimire,
Jiaqiang Yan,
D. G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be…
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Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities2,6-9. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment10-12. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons13-16. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.
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Submitted 19 March, 2014;
originally announced March 2014.
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Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
Authors:
Jason S. Ross,
Philip Klement,
Aaron M. Jones,
Nirmal J. Ghimire,
Jiaqiang Yan,
D. G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Kenji Kitamura,
Wang Yao,
David H Cobden,
Xiaodong Xu
Abstract:
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications…
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Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.
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Submitted 3 March, 2014; v1 submitted 4 December, 2013;
originally announced December 2013.
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Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
Authors:
Aaron M. Jones,
Hongyi Yu,
Jason S. Ross,
Philip Klement,
Nirmal J. Ghimire,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Xiaodong Xu
Abstract:
Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolve…
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Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons.
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Submitted 27 November, 2013;
originally announced November 2013.
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Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal
Authors:
Sanfeng Wu,
Sonia Buckley,
Aaron M. Jones,
Jason S. Ross,
Nirmal J. Ghimire,
Jiaqiang Yan,
David G. Mandrus,
Wang Yao,
Fariba Hatami,
Jelena Vučković,
Arka Majumdar,
Xiaodong Xu
Abstract:
Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic l…
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Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.
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Submitted 23 November, 2013;
originally announced November 2013.
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Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
Authors:
Aaron Mitchell Jones,
Hongyi Yu,
Nirmal Ghimire,
Sanfeng Wu,
Grant Aivazian,
Jason Solomon Ross,
Bo Zhao,
Jiaqiang Yan,
David Mandrus,
Di Xiao,
Wang Yao,
Xiaodong Xu
Abstract:
Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) v…
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Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.
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Submitted 21 March, 2013;
originally announced March 2013.
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Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
Authors:
Jason S Ross,
Sanfeng Wu,
Hongyi Yu,
Nirmal J Ghimire,
Aaron M Jones,
Grant Aivazian,
Jiaqiang Yan,
David G. Mandrus,
Di Xiao,
Wang Yao,
Xiaodong Xu
Abstract:
Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality m…
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Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.
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Submitted 15 February, 2013; v1 submitted 31 October, 2012;
originally announced November 2012.
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Quantum-Enhanced Tunable Second-Order Optical Nonlinearity in Bilayer Graphene
Authors:
Sanfeng Wu,
Li Mao,
Aaron M. Jones,
Wang Yao,
Chuanwei Zhang,
Xiaodong Xu
Abstract:
Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable nonlinear materials. It is desirable to…
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Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable nonlinear materials. It is desirable to develop a robust system with a strong, electrically tunable second order optical nonlinearity. Here we demonstrate theoretically that AB-stacked bilayer graphene (BLG) can exhibit a giant and tunable second order nonlinear susceptibility χ^(2) once an in-plane electric field is applied. χ^(2) can be electrically tuned from 0 to ~ {10^5 pm/V}, three orders of magnitude larger than the widely used nonlinear crystal AgGaSe2. We show that the unusually large χ^(2) arises from two different quantum enhanced two-photon processes thanks to the unique electronic spectrum of BLG. The tunable electronic bandgap of BLG adds additional tunability on the resonance of χ^(2), which corresponds to a tunable wavelength ranging from ~2.6 μm to ~3.1 μm for the up-converted photon. Combined with the high electron mobility and optical transparency of the atomically thin BLG, our scheme suggests a new regime of nonlinear photonics based on BLG.
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Submitted 9 January, 2012;
originally announced January 2012.
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New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements
Authors:
Dong Sun,
Grant Aivazian,
Aaron M. Jones,
Wang Yao,
David Cobden,
Xiaodong Xu
Abstract:
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measu…
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The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication.
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Submitted 16 August, 2011;
originally announced August 2011.
