Showing 1–8 of 8 results for author: Joishi, C

High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors

Authors: Seungheon Shin, Hridibrata Pal, Jon Pratt, John Niroula, Yinxuan Zhu, Chandan Joishi, Brianna A. Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan

Abstract: We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w… ▽ More We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications. △ Less

Submitted 17 April, 2025; v1 submitted 17 April, 2025; originally announced April 2025.

Comments: 14 pages, 10 figures

Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures

Authors: Seungheon Shin, Kyle Liddy, Yinxuan Zhu, Chandan Joishi, Brianna A. Klein, Andrew Armstrong, Andrew A. Allerman, Siddharth Rajan

Abstract: We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the o… ▽ More We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs. △ Less

Submitted 17 April, 2025; v1 submitted 1 April, 2025; originally announced April 2025.

Comments: 12 pages, 7 figures, and 3 tables

Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN

Authors: Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with deg… ▽ More We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N metal semiconductor field effect transistor (MESFET) by compositionally grading the contact layer from Al0.85Ga0.15N to Al0.14Ga0.86N with degenerate doping and proper interfacial engineering considering bandgap-narrowing-induced band offset between channel and contact layer. This represents orders-of-magnitude of lower contact resistivity than that obtained in similar MOCVD-grown structures. A detailed, layer-by-layer analysis of the reverse graded contact and TCAD simulation of the bandgap narrowing effect highlighted that the reverse graded contact layer itself is extremely conductive and interfacial resistance due to bandgap-narrowing-induced barrier between contact and channel dominates the contact resistance. △ Less

Submitted 15 November, 2024; originally announced November 2024.

$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Authors: Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan

Abstract: $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$-Ga$_2$O$_3$ vertical power devices. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 10 pages, 5 figures

Charge trap layer enabled positive tunable V$_{fb}$ in $β$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors

Authors: Dipankar Biswas, Chandan Joishi, Jayeeta Biswas, Prabhans Tiwari, Saurabh Lodha

Abstract: $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}… ▽ More $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}$ metal-oxide-semiconductor capacitors (MOSCAPs), with the ability to fine tune it between 3.5 V to 10.6 V, using a polycrystalline AlN charge trap layer has been demonstrated. This can enable enhancement mode operation over a wide doping range. Excellent V$_{fb}$ retention of ${\sim}$97% for 10$^{4}$ s at 55 $^{\circ}$C was exhibited by the gate stacks after charge trapping, hence reducing the requirement of frequent charge injection cycles. In addition, low gate leakage current density (J$_{g}$) for high negative gate voltages (V$_{g}$${\sim}$-60 V) indicates the potential of this gate stack to enable superior breakdown characteristics in enhancement mode transistors. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: Single file (Manuscript and Supplementary material combined) of 19 pages. Total 5 and 4 figures in manuscript and supplementary material, respectively

Deep-recessed $β$-Ga$_2$O$_3$ delta-doped field effect transistors with in situ epitaxial passivation

Authors: Chandan Joishi, Zhanbo Xia, John S. Jamison, Shahadat H. Sohel, Roberto C. Myers, Saurabh Lodha, Siddharth Rajan

Abstract: We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minim… ▽ More We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minimal plasma damage. Etch damage incurred with plasma etching was mitigated by annealing in vacuum at temperatures above 600 $°$C. A gate-connected field-plate edge termination was implemented for efficient field management. Negligible surface dispersion with lower knee-walkout at high V$_\mathrm{DS}$, and better breakdown characteristics compared to their unpassivated counterparts were achieved. A three terminal off-state breakdown voltage of 315 V, corresponding to an average breakdown field of 2.3 MV/cm was measured. The device breakdown was limited by the field-plate/passivation edge and presents scope for further improvement. This demonstration of epitaxially passivated field effect transistors is a significant step for $β$-Ga$_2$O$_3$ technology since the structure simultaneously provides control of surface-related dispersion and excellent field management. △ Less

Submitted 22 April, 2020; originally announced April 2020.

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Authors: Yuewei Zhang, Adam Neal, Zhanbo Xia, Chandan Joishi, Yuanhua Zheng, Sanyam Bajaj, Mark Brenner, Shin Mou, Donald Dorsey, Kelson Chabak, Gregg Jessen, Jinwoo Hwang, Joseph Heremans, Siddharth Rajan

Abstract: Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap mat… ▽ More Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap materials, such as GaN and SiC. Alloying of Al with \b{eta}-Ga2O3 could enable even larger band gap materials, and provide more flexibility for electronic and optoelectronic device design. In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the \b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas oscillation was observed for the first time in the modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by a weak temperature-dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstrated modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena as well as new semiconductor device technologies based on the \b{eta}-Ga2O3 material system. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG… ▽ More Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics. △ Less

Submitted 28 June, 2017; originally announced June 2017.