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III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared
Authors:
T. V. Shubina,
G. Pozina,
V. N. Jmerik,
V. Yu. Davydov,
C. Hemmingsson,
A. V. Andrianov,
D. R. Kazanov,
S. V. Ivanov
Abstract:
Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refrac…
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Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the change of spatial intensity distribution, concentration of light efficiently into a subwavelength volume, and emission of terahertz photons. At a distance from the edge, the mode-related narrow emission lines have stable energies and widths at different temperatures. Moreover, their energies are identical in the large 'ripened' monocrystal cavities. Our results shed light on the mode behavior in the semiconductor cavities and open the way for single--growth--run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.
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Submitted 31 July, 2015;
originally announced July 2015.
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Identification of main contributions to conductivity of epitaxial InN
Authors:
T. A. Komissarova,
O. Drachenko,
V. N. Jmerik,
X. Wang,
A. Yoshikawa,
S. V. Ivanov
Abstract:
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, ne…
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Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.
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Submitted 26 May, 2011;
originally announced May 2011.
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InN/In nanocomposites: Plasmonic effects and a hidden optical gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 27 June, 2008;
originally announced June 2008.
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InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 3 July, 2008; v1 submitted 27 June, 2008;
originally announced June 2008.
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Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
Authors:
T. V. Shubina,
S. V. Ivanov,
V. N. Jmerik,
D. D. Solnyshkov,
N. A. Cherkashin,
P. S. Kop'ev,
A. Vasson,
J. Leymarie,
K. F. Karlsson,
P. O. Holtz,
B. Monemar
Abstract:
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior…
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We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
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Submitted 9 November, 2003;
originally announced November 2003.
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Mie-resonances, infrared emission and band gap of InN
Authors:
T. V. Shubina,
S. V. Ivanov,
V. N. Jmerik,
D. D. Solnyshkov,
V. A. Vekshin,
P. S. Kop'ev,
A. Vasson,
J. Leymarie,
A. Kavokin,
H. Amano,
K. Shimono,
A. Kasic,
B. Monemar
Abstract:
Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imagin…
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Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.
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Submitted 30 October, 2003;
originally announced October 2003.
