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Measurement of electron beam induced sample heating in SEM experiments
Authors:
Christina Koenig,
Alice Bastos da Silva Fanta,
Joerg R. Jinschek
Abstract:
Scanning Electron Microscopy (SEM) experiments provide detailed insights into material microstructures, enabling high-resolution imaging as well as crystallographic analysis through advanced techniques like Electron Backscatter Diffraction (EBSD). However, the interaction of the high-energy electron beam with the material can lead to localized heating, which may significantly impact specimen integ…
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Scanning Electron Microscopy (SEM) experiments provide detailed insights into material microstructures, enabling high-resolution imaging as well as crystallographic analysis through advanced techniques like Electron Backscatter Diffraction (EBSD). However, the interaction of the high-energy electron beam with the material can lead to localized heating, which may significantly impact specimen integrity, especially in applications requiring prolonged beam exposure, for instance when mapping the crystal structure using EBSD. This study examines electron-beam-induced heating effects on a model metal sample (iron), directly measuring the locally deposited electron beam energy with a MEMS-based heating device and validating these measurements through simulations, including Monte Carlo and Finite Element methods. The analysis focuses on the effects of various experimental parameters such as acceleration voltage (from 5 to 30 kV), beam current (from 0.17 nA to 22 nA), dwell time (from 1$μ$s to 1ms) and sample tilt (0° to 70°). The findings reveal that local sample temperatures can increase by up to 70 °C during EBSD experiments, primarily affected by the choice in beam current and acceleration voltage, with beam current having the most significant impact.
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Submitted 4 December, 2024;
originally announced December 2024.
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Improving the Accuracy of Temperature Measurement on TEM samples using Plasmon Energy Expansion Thermometry (PEET): Addressing Sample Thickness Effects
Authors:
Yi-Chieh Yang,
Luca Serafin,
Nicolas Gauquelin,
Johan Verbeeck,
Joerg R. Jinschek
Abstract:
Advances in analytical scanning transmission electron microscopy (STEM) and microelectronic mechanical systems (MEMS) based microheaters have enabled in-situ materials characterization at the nanometer scale at elevated temperature. In addition to resolving the structural information at elevated temperatures, detailed knowledge of the local temperature distribution inside the sample is essential t…
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Advances in analytical scanning transmission electron microscopy (STEM) and microelectronic mechanical systems (MEMS) based microheaters have enabled in-situ materials characterization at the nanometer scale at elevated temperature. In addition to resolving the structural information at elevated temperatures, detailed knowledge of the local temperature distribution inside the sample is essential to reveal thermally induced phenomena and processes. Here, we investigate the accuracy of plasmon energy expansion thermometry (PEET) as a method to map the local temperature in a tungsten (W) lamella in a range between room temperature and 700 degC. In particular, we address the influence of sample thickness in the range of a typical electron-transparent TEM sample (from 30 nm to 70 nm) on the temperature-dependent plasmon energy. The shift in plasmon energy, used to determine the local sample temperature, is not only temperature-dependent, but in case of W also thickness-dependent in sample thicknesses below approximately 60 nm. The results highlight the importance of considering sample thickness (and especially thickness variations) when analyzing the local bulk plasmon energy for temperature measurement using PEET. However, in case of W, an increasing beam broadening (FWHM) of the bulk plasmon peak with decreasing sample thickness can be used to improve the accuracy of PEET in TEM lamellae with varying sample thickness.
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Submitted 8 August, 2024; v1 submitted 29 July, 2024;
originally announced July 2024.
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Single electron self-coherence and its wave/particle duality in the electron microscope
Authors:
Christian Kisielowski,
Petra Specht,
Joerg R. Jinschek,
Stig Helveg
Abstract:
Intensities in high-resolution phase-contrast images from electron microscopes build up discretely in time by detecting single electrons. A wave description of pulse-like coherent-inelastic interaction of an electron with matter is detailed and verified. In perspective, the interaction time of any matter wave compares with the lifetime of a virtual particle of any elemental interaction, suggesting…
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Intensities in high-resolution phase-contrast images from electron microscopes build up discretely in time by detecting single electrons. A wave description of pulse-like coherent-inelastic interaction of an electron with matter is detailed and verified. In perspective, the interaction time of any matter wave compares with the lifetime of a virtual particle of any elemental interaction, suggesting the present concept of coherent-inelastic interactions of matter waves might be generalizable.
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Submitted 19 April, 2024;
originally announced April 2024.
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A Framework for the Optimal Selection for High-Throughput Data Collection Workflows by Autonomous Experimentation Systems
Authors:
Rohan Casukhela,
Sriram Vijayan,
Joerg R. Jinschek,
Stephen R. Niezgoda
Abstract:
Autonomous experimentation systems have been used to greatly advance the integrated computational materials engineering (ICME) paradigm. This paper outlines a framework that enables the design and selection of data collection workflows for autonomous experimentation systems. The framework first searches for data collection workflows that generate high-quality information and then selects the workf…
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Autonomous experimentation systems have been used to greatly advance the integrated computational materials engineering (ICME) paradigm. This paper outlines a framework that enables the design and selection of data collection workflows for autonomous experimentation systems. The framework first searches for data collection workflows that generate high-quality information and then selects the workflow that generates the \emph{best, highest-value} information as per a user-defined objective. We employ this framework to select the \emph{user-defined best} high-throughput workflow for material characterization on an additively manufactured Ti-6Al-4V sample for the purposes of outlining a basic materials characterization scenario, reducing the collection time of backscattered electron scanning electron scanning electron microscopy images by a factor of 5 times as compared to the benchmark workflow for the case study presented, and by a factor of 85 times as compared to the workflow used in the previously published study.
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Submitted 16 June, 2022; v1 submitted 14 June, 2022;
originally announced June 2022.
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Characterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
Authors:
A. Kovacs,
B. Schaffer,
M. S. Moreno,
J. R. Jinschek,
A. J. Craven,
T. Dietl,
A. Bonanni,
R. E. Dunin-Borkowski
Abstract:
Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled e…
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Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.
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Submitted 30 July, 2013;
originally announced July 2013.
