Nanoscale spin rectifiers for harvesting ambient radiofrequency energy
Authors:
Raghav Sharma,
Tung Ngo,
Eleonora Raimondo,
Anna Giordano,
Junta Igarashi,
Butsurin Jinnai,
Shishun Zhao,
Jiayu Lei,
Yong-Xin Guo,
Giovanni Finocchio,
Shunsuke Fukami,
Hideo Ohno,
Hyunsoo Yang
Abstract:
Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recent…
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Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.
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Submitted 2 August, 2024;
originally announced August 2024.
Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
Authors:
K. Watanabe,
B. Jinnai,
S. Fukami,
H. Sato,
H. Ohno
Abstract:
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy…
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Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular-easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions towards single-digit-nm-scale nano-magnetics/spintronics.
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Submitted 23 December, 2017;
originally announced December 2017.
