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The 2D Materials Roadmap
Authors:
Wencai Ren,
Peter Bøggild,
Joan Redwing,
Kostya Novoselov,
Luzhao Sun,
Yue Qi,
Kaicheng Jia,
Zhongfan Liu,
Oliver Burton,
Jack Alexander-Webber,
Stephan Hofmann,
Yang Cao,
Yu Long,
Quan-Hong Yang,
Dan Li,
Soo Ho Choi,
Ki Kang Kim,
Young Hee Lee,
Mian Li,
Qing Huang,
Yury Gogotsi,
Nicholas Clark,
Amy Carl,
Roman Gorbachev,
Thomas Olsen
, et al. (48 additional authors not shown)
Abstract:
Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and developme…
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Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.
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Submitted 28 April, 2025; v1 submitted 28 March, 2025;
originally announced March 2025.
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Discovery of a Magnetic Topological Semimetal Eu$_3$In$_2$As$_4$ with a Single Pair of Weyl Points
Authors:
Ke Jia,
Jingyu Yao,
Xiaobo He,
Yupeng Li,
Junze Deng,
Ming Yang,
Junfeng Wang,
Zengwei Zhu,
Cuixiang Wang,
Dayu Yan,
Hai L. Feng,
Jie Shen,
Yongkang Luo,
Zhijun Wang,
Youguo Shi
Abstract:
Magnetic Weyl semimetal (MWS) is a unique topological state with open surface Fermi arc states and other exotic transport phenomena. However, most reported MWSs show multiple pairs of Weyl points and complicated Fermi surfaces, which increases the difficulty of the investigation into the intrinsic chiral transport property. In this wor, we successfully synthesized a soft magnetic Weyl semimetal Eu…
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Magnetic Weyl semimetal (MWS) is a unique topological state with open surface Fermi arc states and other exotic transport phenomena. However, most reported MWSs show multiple pairs of Weyl points and complicated Fermi surfaces, which increases the difficulty of the investigation into the intrinsic chiral transport property. In this wor, we successfully synthesized a soft magnetic Weyl semimetal Eu$_3$In$_2$As$_4$ with a single pair of Weyl points under magnetic fields. The Shubnikov de Haas (SdH) oscillation with a single frequency, as well as a linear hall resistance with the same carrier density, is observed up to 50 Tesla, indicating a single pair of Weyl points around the Fermi level with a massless fermion ($m^* = 0.121 m_0$, $π$ Berry phase). Such a single pair of Weyl points is further confirmed by the density functional theory calculations. The magnetic ordering and band topology can be easily tuned by the external magnetic field. The field-induced MWS Eu$_3$In$_2$As$_4$ with a single pair of Weyl points is a good platform to detect chiral transport properties, including possible quantum anomalous Hall effect.
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Submitted 12 March, 2024;
originally announced March 2024.
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Simultaneous thermoosmotic and thermoelectric responses in nanoconfined electrolyte solutions: Effects of nanopore structures and membrane properties
Authors:
Wenyao Zhang,
Muhammad Farhan,
Kai Jiao,
Fang Qian,
Panpan Guo,
Qiuwang Wang,
Charles Chun Yang,
and Cunlu Zhao
Abstract:
Hypothesis: Nanofluidic systems provide an emerging and efficient platform for thermoelectric conversion and fluid pumping with low-grade heat energy. As a basis of their performance enhancement, the effects of the structures and properties of the nanofluidic systems on the thermoelectric response (TER) and the thermoosmotic response (TOR) are yet to be explored. Methods: The simultaneous TER and…
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Hypothesis: Nanofluidic systems provide an emerging and efficient platform for thermoelectric conversion and fluid pumping with low-grade heat energy. As a basis of their performance enhancement, the effects of the structures and properties of the nanofluidic systems on the thermoelectric response (TER) and the thermoosmotic response (TOR) are yet to be explored. Methods: The simultaneous TER and TOR of electrolyte solutions in nanofluidic membrane pores on which an axial temperature gradient is exerted are investigated numerically and semi-analytically. A semi-analytical model is developed with the consideration of finite membrane thermal conductivity and the reservoir/entrance effect. Findings: The increase in the access resistance due to the nanopore-reservoir interfaces accounts for the decrease of short circuit current at the low concentration regime. The decrease in the thermal conductivity ratio can enhance the TER and TOR. The maximum power density occurring at the nanopore radius twice the Debye length ranges from several to dozens of mW K$^{-2}$ m$^{-2}$ and is an order of magnitude higher than typical thermo-supercapacitors. The surface charge polarity can heavily affect the sign and magnitude of the short-circuit current, the Seebeck coefficient, and the open-circuit thermoosmotic coefficient, but has less effect on the short-circuit thermoosmotic coefficient. Furthermore, the membrane thickness makes different impacts on TER and TOR for zero and finite membrane thermal conductivity.
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Submitted 12 September, 2023;
originally announced September 2023.
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Ion steric effect induces giant enhancement of thermoelectric conversion in electrolyte-filled nanochannels
Authors:
Wenyao Zhang,
Xinxi Liu,
Kai Jiao,
Qiuwang Wang,
Chun Yang,
Cunlu Zhao
Abstract:
Ionic thermoelectricity in nanochannels has received increasing attention because of its advantages such as high Seebeck coefficient and low cost. However, most studies have focused on dilute simple electrolytes that neglect the effects of finite ion sizes and short-range electrostatic correlation. Here, we reveal a new thermoelectric mechanism arising from the coupling of ion steric effect due to…
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Ionic thermoelectricity in nanochannels has received increasing attention because of its advantages such as high Seebeck coefficient and low cost. However, most studies have focused on dilute simple electrolytes that neglect the effects of finite ion sizes and short-range electrostatic correlation. Here, we reveal a new thermoelectric mechanism arising from the coupling of ion steric effect due to finite ion sizes and ion thermodiffusion in electric double layers, using both theoretical and numerical methods. We show that this mechanism can significantly enhance the thermoelectric response in nanoconfined electrolytes, depending on the properties of electrolytes and nanochannels. Compared to the previously known mechanisms, the new mechanism can increase the Seebeck coefficient by 100\% or even one order of magnitude enhancement under optimal conditions. Moreover, we demonstrate that the short-range electrostatic correlation can help preserve the Seebeck coefficient enhancement in weaker confinement or in more concentrated electrolytes.
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Submitted 15 August, 2023; v1 submitted 26 April, 2023;
originally announced April 2023.
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Inverse-current quantum electro-oscillations in a charge-density wave insulator
Authors:
Tian Le,
Ruiyang Jiang,
Linfeng Tu,
Renji Bian,
Yiwen Ma,
Yunteng Shi,
Ke Jia,
Zhilin Li,
Zhaozheng Lyu,
Xuewei Cao,
Jie Shen,
Guangtong Liu,
Youguo Shi,
Fucai Liu,
Yi Zhou,
Li Lu,
Fanming Qu
Abstract:
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I…
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Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fröhlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.
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Submitted 19 June, 2024; v1 submitted 16 February, 2023;
originally announced February 2023.
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Tunneling spectroscopic signatures of charge doping and associated Mott transition in $α$-RuCl${_3}$ in proximity to graphite
Authors:
Xiaohu Zheng,
Ke Jia,
Junhai Ren,
Chongli Yang,
Xingjun Wu,
Youguo Shi,
Katsumi Tanigaki,
Rui-Rui Du
Abstract:
The layered Mott insulator $α$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on few-layer $α$-RuCl${_3}$ using a scanning tunneling microscopy/spectroscopy. Characteristic tunneling spectra were detected on $α$-RuCl${_3}$ layers in proximity to graphite.…
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The layered Mott insulator $α$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on few-layer $α$-RuCl${_3}$ using a scanning tunneling microscopy/spectroscopy. Characteristic tunneling spectra were detected on $α$-RuCl${_3}$ layers in proximity to graphite. In the single-layer $α$-RuCl${_3}$ in direct contact with graphite, distinct states in the Mott-gap regime were observed. The in-gap states are demonstrated to be closely related to the electron orbitals in $α$-RuCl${_3}$ and graphite, and to be sensitive to interfacial coupling, where a hybridization at the heterointerface is hypothesized. The in-gap states are also thought of as a charge reservoir for weakly doping the $α$-RuCl${_3}$ upper-layers. It demonstrated that the weak doping effect causes a considerable decrease in the Mott-gap within the upper-layers, suggesting that an unconventional Mott-transition is occurring in these layers. The results show that the heterostructure comprised of $α$-RuCl${_3}$ and graphite is a good platform for investigating the doping physics in $α$-RuCl${_3}$. Therefore, tunneling into such a doped system is a useful probe for studying otherwise insulating spin-liquid candidates.
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Submitted 5 May, 2023; v1 submitted 1 May, 2022;
originally announced May 2022.
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Antiferromagnetic Excitonic Insulator State in Sr3Ir2O7
Authors:
D. G. Mazzone,
Y. Shen,
H. Suwa,
G. Fabbris,
J. Yang,
S-S. Zhang,
H. Miao,
J. Sears,
Ke Jia,
Y. G. Shi,
M. H. Upton,
D. M. Casa,
X. Liu,
J. Liu,
C. D. Batista,
M. P. M. Dean
Abstract:
Excitonic insulators are usually considered to form via the condensation of a soft charge mode of bound electron-hole pairs. This, however, presumes that the soft exciton is of spin-singlet character. Early theoretical considerations have also predicted a very distinct scenario, in which the condensation of magnetic excitons results in an antiferromagnetic excitonic insulator state. Here we report…
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Excitonic insulators are usually considered to form via the condensation of a soft charge mode of bound electron-hole pairs. This, however, presumes that the soft exciton is of spin-singlet character. Early theoretical considerations have also predicted a very distinct scenario, in which the condensation of magnetic excitons results in an antiferromagnetic excitonic insulator state. Here we report resonant inelastic x-ray scattering (RIXS) measurements of Sr3Ir2O7. By isolating the longitudinal component of the spectra, we identify a magnetic mode that is well-defined at the magnetic and structural Brillouin zone centers, but which merges with the electronic continuum in between these high-symmetry points and which decays upon heating concurrent with a decrease in the material's resistivity. We show that a bilayer Hubbard model, in which electron-hole pairs are bound by exchange interactions, consistently explains all the electronic and magnetic properties of Sr3Ir2O7 indicating that this material is a realization of the long-predicted antiferromagnetic excitonic insulators phase.
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Submitted 11 January, 2022;
originally announced January 2022.
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Neutron-diffraction and linear {Grüneisen} parameter studies of magnetism in NdFe$_2$Ga$_8$
Authors:
Xingyu Wang,
Cuixiang Wang,
Bo Liu,
Ke Jia,
Xiaoyan Ma,
Gang Li,
Xiaoping Wang,
Chin-Wei Wang,
Youguo Shi,
Yi-feng Yang,
Shiliang Li
Abstract:
We study the magnetism in NdFe$_2$Ga$_8$ by the neutron-diffraction and temperature-modulated linear {Grüneisen} parameter measurements. Previous thermodynamical measurements have demonstrated that there are two magnetic transitions at 10 and 14.5 K, respectively. Neutron-diffraction measurements confirm that the lower one is an antiferromagnetic (AFM) transition with a commensurate magnetic struc…
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We study the magnetism in NdFe$_2$Ga$_8$ by the neutron-diffraction and temperature-modulated linear {Grüneisen} parameter measurements. Previous thermodynamical measurements have demonstrated that there are two magnetic transitions at 10 and 14.5 K, respectively. Neutron-diffraction measurements confirm that the lower one is an antiferromagnetic (AFM) transition with a commensurate magnetic structure. Both the commensurate and the incommensurate (IC) magnetic peaks are found below the higher transition but their intensities only gradually increase with decreasing temperature. Below 10 K, the commensurate peak intensity increases quickly with decreasing temperature, signaling the AFM transition, while the IC peak intensity disappears below 5 K. The linear {Grüneisen} parameter along the $c$ axis, $Γ_c$, shows a hysteresis behavior that is different from the hysteresis behavior for the magnetization $M$. We give a discussion of the origin of the magnetism in NdFe$_2$Ga$_8$.
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Submitted 10 February, 2022; v1 submitted 10 September, 2021;
originally announced September 2021.
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A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids
Authors:
Chen Li,
Huilong Zhu,
Yongkui Zhang,
Xiaogen Yin,
Kunpeng Jia,
Junjie Li,
Guilei Wang,
Zhenzhen Kong,
Anyan Du,
Tengzhi Yang,
Liheng Zhao,
Lu Xie,
Xuezheng Ai,
Shishuai Ma,
Yangyang Li,
Henry H. Radamson,
Chen Li,
Huilong Zhu,
Yongkui Zhang,
Xiaogen Yin,
Kunpeng Jia,
Junjie Li,
Guilei Wang,
Zhenzhen Kong,
Anyan Du
, et al. (7 additional authors not shown)
Abstract:
A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric aci…
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A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric acid. The model was calibrated with experimental data and the oxidation saturation time, final oxide thickness, and selectivity between Si0.7Ge0.3 and p+ Si were obtained. The digital etch of laminated Si0.7Ge0.3/p+ Si was also investigated. The depth of the tunnels formed by etching SiGe layers between two Si layers was found in proportion to digital etching cycles. And oxidation would also saturate and the saturated relative etched amount per cycle (REPC) was 0.5 nm (4 monolayers). A corrected selectivity calculation formula was presented. The oxidation model was also calibrated with Si0.7Ge0.3/p+ Si stacks, and selectivity from model was the same with the corrected formula. The model can also be used to analyze process variations and repeatability. And it could act as a guidance for experiment design. Selectivity and repeatability should make a trade-off.
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Submitted 7 March, 2020;
originally announced March 2020.
