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Observation of Optical Gain in Er-Doped GaN Epilayers
Authors:
V. X. Ho,
Y. Wang,
B. Ryan,
L. Patrick,
H. X. Jiang,
J. Y. Lin,
N. Q. Vinh
Abstract:
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstra…
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Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm-1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.
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Submitted 10 February, 2020;
originally announced February 2020.
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Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
Authors:
V. X. Ho,
T. M. Al tahtamouni,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
N. Q. Vinh
Abstract:
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of…
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Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.
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Submitted 28 February, 2018;
originally announced February 2018.
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Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
Authors:
V. X. Ho,
T. V. Dao,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
S. A. McGill,
N. Q. Vinh
Abstract:
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a pic…
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We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.
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Submitted 25 November, 2016;
originally announced November 2016.
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Excitation Mechanisms of Er Optical Centers in GaN Epilayers
Authors:
D. K. George,
M. Hawkins,
M. McLaren,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
N. Q. Vinh
Abstract:
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However,…
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We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However, these centers have different photoluminescence spectra, decay dynamics, and excitation cross sections. The isolated Er optical center, which can be excited by either mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be excited through band-to-band excitation but has the largest cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate new approaches for realization of optical amplification, and possibly lasing, at room temperature.
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Submitted 17 July, 2015;
originally announced July 2015.
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Metastable giant moments in Gd-implanted GaN, Si, and sapphire
Authors:
X. Wang,
C. Timm,
X. M. Wang,
W. K. Chu,
J. Y. Lin,
H. X. Jiang,
J. Z. Wu
Abstract:
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments i…
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We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.
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Submitted 28 March, 2011;
originally announced March 2011.
