Showing 1–3 of 3 results for author: Ji, J -

The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

Authors: J. C. Kim, J. -Y. Ji, J. S. Kline, J. R. Tucker, T. -C. Shen

Abstract: The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface… ▽ More The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface roughening. AP2 antiphase boundaries are stable up to 973K, and ion sputtering and solid phase epitaxy performed at 973K result in atomically flat Si(001) surfaces. △ Less

Submitted 15 June, 2003; originally announced June 2003.

Comments: 16 pages, 4 figures, to be published in Surface Science

Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

Authors: J. C. Kim, J. -Y. Ji, J. S. Kline, J. R. Tucker, T. -C. Shen

Abstract: Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering a… ▽ More Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering at room temperature followed by a 973K anneal yields atomically clean and flat Si(100) surfaces suitable for nanoscale device fabrication. △ Less

Submitted 15 June, 2003; originally announced June 2003.

Comments: 13 pages, 3 figures, to be published in Applied Surface Science

Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

Authors: M. A. Zudov, C. L. Yang, R. R. Du, T. -C. Shen, J. -Y. Ji, J. S. Kline, J. R. Tucker

Abstract: An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first… ▽ More An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions. △ Less

Submitted 20 May, 2003; originally announced May 2003.