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Quantum emitter formation dynamics and probing of radiation induced atomic disorder in silicon
Authors:
Wei Liu,
Vsevolod Ivanov,
Kaushalya Jhuria,
Qing Ji,
Arun Persaud,
Walid Redjem,
Jacopo Simoni,
Yertay Zhiyenbayev,
Boubacar Kante,
Javier Garcia Lopez,
Liang Z. Tan,
Thomas Schenkel
Abstract:
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers are formed more efficiently by pulsed proton irradiat…
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Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers are formed more efficiently by pulsed proton irradiation than continuous wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimizing the ratio of G-center formation to nonradiative defect accumulation. The G-centers preserve narrow linewidths of about 0.1 nm when they are generated by moderate pulsed proton fluences, while the linewidth broadens significantly as the pulsed proton fluence increases. This implies vacancy/interstitial clustering by overlapping collision cascades. Tracking G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complimentary analytical method for sensing damage accumulation. Aided by ${\it ab}$ ${\it initio}$ electronic structure calculations, we provide insight into the atomic disorder-induced inhomogeneous broadening by introducing vacancies and silicon interstitials in the vicinity of a G-center. A vacancy leads to a tensile strain and can result in either a redshift or blueshift of the G-center emission, depending on its position relative to the G-center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic redshift. High flux and tunable ion pulses enable the exploration of fundamental dynamics of radiation-induced defects as well as methods for defect engineering and qubit synthesis for quantum information processing.
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Submitted 11 February, 2023;
originally announced February 2023.
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Picosecond Spin-Orbit Torque Induced Coherent Magnetization Switching in a Ferromagnet
Authors:
Debanjan Polley,
Akshay Pattabi,
Ashwin Rastogi,
Kaushalya Jhuria,
Eva Diaz,
Hanuman Singh,
Aristide Lemaitre,
Michel Hehn,
Jon Gorchon,
Jeffrey Bokor
Abstract:
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to the device's increased lifetime and speed of operation. However, recent SOT switching studies reveal an incubation delay in the ~ns range due to stochasticity i…
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Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to the device's increased lifetime and speed of operation. However, recent SOT switching studies reveal an incubation delay in the ~ns range due to stochasticity in the nucleation of a magnetic domain during reversal. Here, we experimentally demonstrate ultrafast SOT-induced magnetization switching dynamics of a ferromagnet with no incubation delay by avoiding the nucleation process and driving the magnetization coherently. We employ an ultrafast photo-conducting switch and a co-planar strip line to generate and guide ~ps current pulses into the heavy metal/ferromagnet layer stack and induce ultrafast SOT. We use magneto-optical probing to investigate the magnetization switching dynamics with sub-picosecond time resolution. Depending on the relative current pulse and in-plane magnetic field polarities, we observe either an ultrafast demagnetization and subsequent recovery along with a SOT-induced precessional oscillation, or ultrafast SOT switching. The magnetization zero-crossing occurs in ~70 ps, which is approximately an order of magnitude faster than previous studies. Complete switching needs ~250 ps and is limited by the heat diffusion to the substrate. We use a macro-magnetic simulation coupled with an ultrafast heating model to analyze the effect of ultrafast thermal anisotropy torque and current-induced torque in the observed dynamics. Good agreement between our experimental results and the macro-spin model shows that the switching dynamics are coherent and present no noticeable incubation delay. Our work suggests a potential pathway toward dramatically increasing the writing speed of SOT magnetic random-access memory devices.
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Submitted 15 November, 2022;
originally announced November 2022.
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Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
Authors:
Vsevolod Ivanov,
Jacopo Simoni,
Yeonghun Lee,
Wei Liu,
Kaushalya Jhuria,
Walid Redjem,
Yertay Zhiyenbayev,
Christos Papapanos,
Wayesh Qarony,
Boubacar Kante,
Arun Persaud,
Thomas Schenkel,
Liang Z. Tan
Abstract:
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-$1/2$ T-center are…
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The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-$1/2$ T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ \textit{ab initio} density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the $D_{zz}$ component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.
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Submitted 23 September, 2022; v1 submitted 9 June, 2022;
originally announced June 2022.
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Picosecond Spin Orbit Torque Switching
Authors:
Kaushalya Jhuria,
Julius Hohlfeld,
Akshay Pattabi,
Elodie Martin,
Aldo Ygnacio Arriola Córdova,
Xinping Shi,
Roberto Lo Conte,
Sebastien Petit-Watelot,
Juan Carlos Rojas-Sanchez,
Gregory Malinowski,
Stéphane Mangin,
Aristide Lemaître,
Michel Hehn,
Jeffrey Bokor,
Richard B. Wilson,
Jon Gorchon
Abstract:
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific magnetic materials at the picosecond timescale. However, the use of ultrafast optics in integrated circuits and memories would require a major paradigm shift. An u…
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Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific magnetic materials at the picosecond timescale. However, the use of ultrafast optics in integrated circuits and memories would require a major paradigm shift. An ultrafast electrical control of the magnetization is far preferable for integrated systems. Here we demonstrate reliable and deterministic control of the out-of-plane magnetization of a 1 nm-thick Co layer with single 6 ps-wide electrical pulses that induce spin-orbit torques on the magnetization. We can monitor the ultrafast magnetization dynamics due to the spin-orbit torques on sub-picosecond timescales, thus far accessible only by numerical simulations. Due to the short duration of our pulses, we enter a counter-intuitive regime of switching where heat dissipation assists the reversal. Moreover, we estimate a low energy cost to switch the magnetization, projecting to below 1fJ for a (20 nm)^3 cell. These experiments prove that spintronic phenomena can be exploited on picosecond time-scales for full magnetic control and should launch a new regime of ultrafast spin torque studies and applications.
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Submitted 23 August, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
