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Study of vacancy ordering and the boson peak in metastable cubic Ge-Sb-Te using machine learning potentials
Authors:
Young-Jae Choi,
Minjae Ghim,
Seung-Hoon Jhi
Abstract:
The mechanism of the vacancy ordering in metastable cubic Ge-Sb-Te (c-GST) that underlies the ultrafast phase-change dynamics and prominent thermoelectric properties remains elusive. Achieving a comprehensive understanding of the vacancy-ordering process at an atomic level is challenging because of enormous computational demands required to simulate disordered structures on large temporal and spat…
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The mechanism of the vacancy ordering in metastable cubic Ge-Sb-Te (c-GST) that underlies the ultrafast phase-change dynamics and prominent thermoelectric properties remains elusive. Achieving a comprehensive understanding of the vacancy-ordering process at an atomic level is challenging because of enormous computational demands required to simulate disordered structures on large temporal and spatial scales. In this study, we investigate the vacancy ordering in c-GST by performing large-scale molecular dynamics simulations using machine learning potentials. The initial c-GST structure with randomly distributed vacancies rearranges to develop a semi-ordered cubic structure with layer-like ordered vacancies after annealing at 700~K for 100~ns. The vacancy ordering significantly affects the lattice dynamical properties of c-GST. In the initial structure with fully disordered vacancies, we observe a boson peak, usually associated with amorphous solids, that consists of localized modes at $\sim$0.575~THz. The boson peak modes are highly localized around specific atomic arrangements of straight vacancy-Te-vacancy trios. As vacancies become ordered, the boson peak disappears and the Debye-Waller thermal \textit{B} factor of Te decreases substantially. This finding indicates that the c-GST undergoes a transition from amorphous-like to crystalline-like solid state by thermal annealing in low-frequency dynamics.
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Submitted 4 January, 2024; v1 submitted 3 September, 2023;
originally announced September 2023.
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Divergent phonon angular momentum driven by temperature and strain
Authors:
Young-Jae Choi,
Seung-Hoon Jhi
Abstract:
The phonon angular momentum (PAM) may exhibit exotic temperature dependence as it is sensitive to the phonon lifetime. Constant phonon-lifetime approximation fails to depict such behavior. Here, we study the PAM of AlN, GaN, and graphene-like boron nitride (g-BN) monolayer with full consideration of phonon lifetime using first-principles calculations. We show that wurtzite AlN and GaN acquire dive…
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The phonon angular momentum (PAM) may exhibit exotic temperature dependence as it is sensitive to the phonon lifetime. Constant phonon-lifetime approximation fails to depict such behavior. Here, we study the PAM of AlN, GaN, and graphene-like boron nitride (g-BN) monolayer with full consideration of phonon lifetime using first-principles calculations. We show that wurtzite AlN and GaN acquire divergent PAM at low temperatures from their lowest-lying phonon branches. The g-BN monolayer, on the other hand, does not have finite PAM at equilibrium structure. Rather it shows intriguing strain-dependence in PAM; the compressive strain greater than the critical size generates divergent PAM at low temperatures due to the divergent lifetime of TA phonons. As PAM couples with rotational excitations in solids associated with charge, spin, or electromagnetic fields, our study demonstrates a possibility of mechanical and thermal engineering of such excitations.
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Submitted 12 September, 2022;
originally announced September 2022.
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Lattice dynamical properties of antiferromagnetic oxides calculated using self-consistent extended Hubbard functional method
Authors:
Wooil Yang,
Bo Gyu Jang,
Young-Woo Son,
Seung-Hoon Jhi
Abstract:
We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-site and intersite Hubbard interactions determined self-consistently within the framework of density functional theory. The on-site and intersite Hubbard terms fix the errors associated with the electron self-interaction i…
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We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-site and intersite Hubbard interactions determined self-consistently within the framework of density functional theory. The on-site and intersite Hubbard terms fix the errors associated with the electron self-interaction in the local and semilocal functionals. Inclusion of the intersite Hubbard terms in addition to the on-site Hubbard terms produces accurate phonon dispersion of the transition-metal oxides. Calculated Born effective charges and high-frequency dielectric constants are in good agreement with experiment. Our study provides a computationally inexpensive and accurate set of first-principles calculations for strongly-correlated materials and related phenomena.
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Submitted 5 May, 2022;
originally announced May 2022.
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Intersite Coulomb Interactions in Charge Ordered Systems
Authors:
Bo Gyu Jang,
Minjae Kim,
Sang-Hoon Lee,
Wooil Yang,
Seung-Hoon Jhi,
Young-Woo Son
Abstract:
Using {\it ab initio} approaches for extended Hubbard interactions coupled to phonons, we reveal that the intersite Coulomb interaction plays important roles in determining various distinctive phases of the paradigmatic charge ordered materials of Ba$_{1-x}$K$_x A$O$_3$ ($A=$ Bi and Sb). We demonstrated that all their salient doping dependent experiment features such as breathing instabilities, an…
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Using {\it ab initio} approaches for extended Hubbard interactions coupled to phonons, we reveal that the intersite Coulomb interaction plays important roles in determining various distinctive phases of the paradigmatic charge ordered materials of Ba$_{1-x}$K$_x A$O$_3$ ($A=$ Bi and Sb). We demonstrated that all their salient doping dependent experiment features such as breathing instabilities, anomalous phonon dispersions, and transition between charge-density wave and superconducting states can be accounted very well if self-consistently obtained nearest neighbor Hubbard interaction are included, thus establishing a minimal criterion for reliable descriptions of spontaneous charge orders in solids.
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Submitted 23 March, 2023; v1 submitted 5 May, 2022;
originally announced May 2022.
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Ab initio study of lattice dynamics of group IV semiconductors using pseudohybrid functionals for extended Hubbard interactions
Authors:
Wooil Yang,
Seung-Hoon Jhi,
Sang-Hoon Lee,
Young-Woo Son
Abstract:
We study the lattice dynamics of group IV semiconductors using fully ab-initio extended Hubbard functional. The onsite and intersite Hubbard interactions are determined self-consistently with recently developed pseudohybrid functionals and included in force calculations. We analyze the Pulay forces by the choice of atomic orbital projectors and the force contribution of the onsite and intersite Hu…
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We study the lattice dynamics of group IV semiconductors using fully ab-initio extended Hubbard functional. The onsite and intersite Hubbard interactions are determined self-consistently with recently developed pseudohybrid functionals and included in force calculations. We analyze the Pulay forces by the choice of atomic orbital projectors and the force contribution of the onsite and intersite Hubbard terms. The phonon dispersions, Gruneisen parameters, and lattice thermal conductivities of diamond, silicon, and germanium, which are most-representative covalent-bonding semiconductors, are calculated and compared with the results using local, semilocal, and hybrid functionals. The extended Hubbard functional produces increased phonon velocities and lifetimes, and thus lattice thermal conductivities compared to local and semilocal functionals, agreeing with experiments very well. Considering that our computational demand is comparable to simple local functionals, this work thus suggests a way to perform high-throughput electronic and structural calculations with a higher accuracy.
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Submitted 14 June, 2021;
originally announced June 2021.
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Coexistence of spontaneous polarization and superconductivity in hole-doped oxyhydrides ATiO_2H (A=K, Rb, Cs): first-principles study
Authors:
Minjae Ghim,
Nobuya Sato,
Ryosuke Akashi,
Seung-Hoon Jhi,
Shinji Tsuneyuki
Abstract:
The polar metal is a material that hosts both polar distortion and metallicity. Such a material is expected to show exotic magneto-electric phenomena if superconducts. Here, we theoretically explore ferroelectric and superconducting properties in a series of perovskite-type oxyhydrides ATiO$_2$H (A=K, Rb, Cs) under hole-doping conditions using the first-principles calculations based on the density…
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The polar metal is a material that hosts both polar distortion and metallicity. Such a material is expected to show exotic magneto-electric phenomena if superconducts. Here, we theoretically explore ferroelectric and superconducting properties in a series of perovskite-type oxyhydrides ATiO$_2$H (A=K, Rb, Cs) under hole-doping conditions using the first-principles calculations based on the density functional theory. Our simulation shows that these compounds host spontaneous polarization and superconductivity at optimal doping concentration. The unusual coexistence of superconductivity and large polarization (~100 $μ$C/cm$^2$) originates from weak coupling of the polar distortion and superconducting states, the reason of which is separation of the displaced atoms and spacially confined metallic carriers. Besides, the superconductivity is enhanced by the unique electronic properties near the valence band maximum: quartic band dispersion with a sizable contribution of hydrogen 1s states. Our study thus feature the oxyhydrides as possible model polar superconducting systems, which may be utilizable for future magneto-electric devices.
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Submitted 26 November, 2020;
originally announced November 2020.
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Weyl node assisted conductivity switch in interfacial phase change memory with van der Waals interfaces
Authors:
Jinwoong Kim,
Jeongwoo Kim,
Young-Sun Song,
Ruqian Wu,
Seung-Hoon Jhi,
Nicholas Kioussis
Abstract:
The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical con…
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The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical conductivity two orders of magnitude larger than that of the RESET state. But, its origin remains elusive. Here, we predict the emergence of a Weyl semimetal phase in the SET state induced by the ferroelectric polarization which breaks the crystal inversion symmetry. We show that the giant conductivity enhancement of the SET phase is due to the appearance of gapless Weyl nodes. The Ge-Te- or Sb-Te-terminated surfaces of Weyl semimetal iPCM produce surface states with completely distinctive topology, where the former consists solely of Fermi arcs while the latter consists of both closed Fermi surface and open Fermi arcs. The iPCM with van der Waals interfaces offers an ideal platform for exploiting the exotic Weyl properties for future memory device applications.
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Submitted 18 February, 2017;
originally announced February 2017.
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Topological phase transition and quantum spin Hall edge states of antimony few layers
Authors:
Sung Hwan Kim,
Kyung-Hwan Jin,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Han Woong Yeom
Abstract:
While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by sc…
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While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.
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Submitted 11 April, 2016;
originally announced April 2016.
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Quantum electronic transport of topological surface states in beta-Ag2Se nanowire
Authors:
Jihwan Kim,
Ahreum Hwang,
Sang-Hoon Lee,
Seung-Hoon Jhi,
Sunghun Lee,
Yun Chang Park,
Si-in Kim,
Hong-Seok Kim,
Yong-Joo Doh,
Jinhee Kim,
Bongsoo Kim
Abstract:
Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that th…
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Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.
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Submitted 7 January, 2016;
originally announced January 2016.
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Proximity Effect Induced Electronic Properties of Epitaxial Graphene on Bi2Te2Se
Authors:
Paengro Lee,
Kyung-Hwan Jin,
Si Jin Sung,
Jin Gul Kim,
Min-Tae Ryu,
Hee-Min Park,
Seung-Hoon Jhi,
Namdong Kim,
Yongsam Kim,
Seong Uk Yu,
Kwang S. Kim,
Do Young Noh,
Jinwook Chung
Abstract:
We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting…
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We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting with their DPs separated by 0.53 eV in the photoemission data measured with synchrotron photons. We further demonstrate that the separation between the two DPs, ΔD-D, can be artificially fine-tuned by adjusting the amount of Cs atoms adsorbed on the graphene to a value as small as ΔD-D = 0.12 eV to find any proximity effect induced by the DPs. Our density functional theory calculation shows a spin-orbit gap of ~20 meV in the π-band enhanced by three orders of magnitude from that of a pristine graphene, and a concomitant phase transition from a semi-metallic to a quantum spin Hall phase when ΔD-D $\leq$ 0.20 eV. We thus present a practical means of spin-polarizing the π-band of graphene, which can be pivotal to advance the graphene-based spintronics.
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Submitted 8 November, 2015;
originally announced November 2015.
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Topological fate of edge states of Bi single bilayer on Bi(111)
Authors:
Han Woong Yeom,
Kyung-Hwan Jin,
Seung-Hoon Jhi
Abstract:
We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents…
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We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge states reflects the topological nature of underlying films. This result unambiguously denies recent claims that the step edge state on the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) films represents non-trivial edge states of the two dimensional topologcial insulator phase expected for a very thin Bi(111) film. The trivial step edge states have a gigantic spin splitting of one dimensional Rashba bands and the substantial intermixing with electronic states of the bulk, which might be exploited further.
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Submitted 7 November, 2015;
originally announced November 2015.
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Transforming a Surface State of Topological Insulator by a Bi Capping Layer
Authors:
Han Woong Yeom,
Sung Hwan Kim,
Woo Jong Shin,
Kyung-Hwan Jin,
Joonbum Park,
Tae-Hwan Kim,
Jun Sung Kim,
Hirotaka Ishikawa,
Kazuyuki Sakamoto,
Seung-Hoon Jhi
Abstract:
We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong elec…
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We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
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Submitted 17 November, 2014;
originally announced November 2014.
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Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se
Authors:
Sung Hwan Kim,
Kyung-Hwan Jin,
Joonbum Park,
Jun Sung Kim,
Seung-Hoon Jhi,
Tae-Hwan Kim,
Han Woong Yeom
Abstract:
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes wit…
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The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].
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Submitted 9 April, 2014; v1 submitted 8 April, 2014;
originally announced April 2014.
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Phonon-induced topological insulating phases in group IV-VI semiconductors
Authors:
Jinwoong Kim,
Seung-Hoon Jhi
Abstract:
Development of topological insulating phases in IV-VI compounds under dynamic lattice deformations is studied using first-principles methods. Unlike the static state of topological phases at equilibrium conditions, we show that non-trivial topological phases are induced in the compounds by the dynamic lattice deformations from selective phonon modes. Calculations of the time-reversal polarization…
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Development of topological insulating phases in IV-VI compounds under dynamic lattice deformations is studied using first-principles methods. Unlike the static state of topological phases at equilibrium conditions, we show that non-trivial topological phases are induced in the compounds by the dynamic lattice deformations from selective phonon modes. Calculations of the time-reversal polarization show that the Z2 invariant of the compounds is flipped by the atomic displacements of selective phonon modes and that the compounds exhibit oscillating topological phases upon dynamic lattice deformations. Our results indicate that the elementary excitations in solids can trigger topological phases in trivial band insulators.
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Submitted 2 August, 2013;
originally announced August 2013.
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Anomalous Optical Phonon Splittings in Sliding Bilayer Graphene
Authors:
Seon-Myeong Choi,
Seung-Hoon Jhi,
Young-Woo Son
Abstract:
We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculations and a model Hamiltonian. Our study shows that the long wave-length optical phonon modes change in a sensitive and unusual way depending on the symmetry as well as the parity of sliding atomic structures and that, accor…
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We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculations and a model Hamiltonian. Our study shows that the long wave-length optical phonon modes change in a sensitive and unusual way depending on the symmetry as well as the parity of sliding atomic structures and that, accordingly, Raman- and infrared-active optical phonon modes behave differently upon the direction and size of the sliding. The renormalization of phonon modes by the interlayer electronic coupling is shown to be crucial to explain their anomalous behavior upon the sliding. Also, we show that the crystal symmetry change due to the sliding affects the polarized Stokes Raman-scattering intensity, which can be utilized to detect tiny misalignment of graphene layers using spectroscopic tools.
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Submitted 24 July, 2013;
originally announced July 2013.
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Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations
Authors:
Joonbum Park,
E. Kampert,
Kyung-Hwan Jin,
Man Jin Eom,
Jongmok Ok,
E. S. Choi,
F. Wolff-Fabris,
K. D. Lee,
N. Hur,
J. -S Rhyee,
Y. J. Jo,
Seung-Hoon Jhi,
Jun Sung Kim
Abstract:
We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic…
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We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique spindle-torus-type topology and the non-trivial Berry phases, confirming the spin chirality with oppositely circulating spin-texture. Near the quantum limit at high magnetic fields, we find a substantial Zeeman effect with an effective g-factor of ~ 60 for the Rashba-split Fermi surfaces. These findings provide clear evidence of strong Rashba and Zeeman coupling in the bulk states of BiTeI, suggesting that BiTeI is a good platform hosting the spin-polarized chiral states.
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Submitted 7 June, 2013;
originally announced June 2013.
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Proximity-induced giant spin-orbit interaction in epitaxial graphene on topological insulator
Authors:
Kyung-Hwan Jin,
Seung-Hoon Jhi
Abstract:
Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure using density functional theory and tight-binding methods. We show that the epitaxial graphene on Sb2Te3 turns into quantum spin-Hall phase due to its proximit…
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Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study the electronic structure of graphene-Sb2Te3 heterostructure using density functional theory and tight-binding methods. We show that the epitaxial graphene on Sb2Te3 turns into quantum spin-Hall phase due to its proximity to the topological insulating Sb2Te3. It is found that the epitaxial graphene develops a giant spin-orbit gap of about ~20 meV, which is about three orders of magnitude larger than that of pristine graphene. We discuss the origin of such enhancement of the spin-orbit interaction and possible outcomes of the spin-Hall phase in graphene.
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Submitted 15 June, 2012;
originally announced June 2012.
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Topological phase transition in Dirac fermionic heterostructures
Authors:
Jeongwoo Kim,
Jinwoong Kim,
Ki-Seok Kim,
Seung-Hoon Jhi
Abstract:
Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact to each other with particular helicity ordering. Using first-principles calculations and a model Lagrangian…
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Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact to each other with particular helicity ordering. Using first-principles calculations and a model Lagrangian, we explicitly demonstrated that such helicity ordering occurs in real materials of ternary chalcogen compounds and determines their topological insulating phase. Our results reveal the rich collective nature of interacting surface Dirac fermions, and pave the way for utilizing topological phases for technological devices such as non-volatile memories.
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Submitted 13 June, 2012;
originally announced June 2012.
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The stability of graphene band structures against an external periodic perturbation; Na on Graphene
Authors:
Choongyu Hwang,
Sunyoung Shin,
Seon-Myeong Choi,
Namdong Kim,
Sanghun Uhm,
Hyosang Kim,
Chan-cuk Hwang,
Doyoung Noh,
Seung-Hoon Jhi,
Jinwook Chung
Abstract:
We report that the $π$ band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature. We have measured the band structures from the graphene layers formed on the 6H-SiC(0001) substrate using angle-resolved photoemission spectroscopy with synchrotron photons. With increasing Na dose, the $π$ band appears t…
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We report that the $π$ band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature. We have measured the band structures from the graphene layers formed on the 6H-SiC(0001) substrate using angle-resolved photoemission spectroscopy with synchrotron photons. With increasing Na dose, the $π$ band appears to be quickly diffused into background at 85 K whereas it becomes significantly enhanced its spectral intensity at room temperature (RT). A new parabolic band centered at $k\sim$1.15 Å$^{-1}$ also forms near Fermi energy with Na at 85 K while no such a band observed at RT. Such changes in the band structure are found to be reversible with temperature. Analysis based on our first principles calculations suggests that the changes of the $π$ band of graphene be mainly driven by the Na-induced potential especially at low temperature where the potential becomes periodic due to the crystallized Na overlayer. The new parabolic band turns to be the $π$ band of the underlying buffer layer partially filled by the charge transfer from Na adatoms. The five orders of magnitude increased hopping rate of Na adatoms at RT preventing such a charge transfer explains the absence of the new band at RT.
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Submitted 20 April, 2011;
originally announced April 2011.
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Electronic topological transition in sliding bilayer graphene
Authors:
Young-Woo Son,
Seon-Myeong Choi,
Yoon Pyo Hong,
Sungjong Woo,
Seung-Hoon Jhi
Abstract:
We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon originates from a generation of effective non-Abelian vector potential in Dirac Hamiltonian by the sliding motions. The characteristics of the transition such as pair an…
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We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon originates from a generation of effective non-Abelian vector potential in Dirac Hamiltonian by the sliding motions. The characteristics of the transition such as pair annihilations of massless Dirac fermions are dictated by the sliding direction owing to a unique interplay between the effective non-Abelian gauge fields and Berry's phases associated with massless electrons. The transition manifests itself in various measurable quantities such as anomalous density of states, minimal conductivity, and distinct Landau level spectrum.
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Submitted 13 October, 2011; v1 submitted 3 December, 2010;
originally announced December 2010.
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Topological insulating behaviour in conducting property of crystalline Ge-Sb-Te
Authors:
Jeongwoo Kim,
Jinwoong Kim,
Seung-Hoon Jhi
Abstract:
We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topologica…
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We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surface-like interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.
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Submitted 22 October, 2010;
originally announced October 2010.
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Controlling Energy Gap of Bilayer Graphene by Strain
Authors:
Seon-Myeong Choi,
Seung-Hoon Jhi,
Young-Woo Son
Abstract:
Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseu…
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Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseudo-scalar potentials in graphene. When homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap. The results demonstrate a simple mechanical method of realizing pseudo-electromagnetism in graphene and suggest a maneuverable approach to fabrication of electromechanical devices based on bilayer graphene.
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Submitted 10 September, 2010; v1 submitted 24 February, 2010;
originally announced February 2010.
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Effects of Strain on Electronic Properties of Graphene
Authors:
Seon-Myeong Choi,
Seung-Hoon Jhi,
Young-Woo Son
Abstract:
We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to a very large uniaxial strain of 30% except a very narrow strain range where a tiny energy gap opens. As the uniaxial strain increases along a certain direction, the Fermi velocity parallel to it decreases quickly and…
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We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to a very large uniaxial strain of 30% except a very narrow strain range where a tiny energy gap opens. As the uniaxial strain increases along a certain direction, the Fermi velocity parallel to it decreases quickly and vanishes eventually, whereas the Fermi velocity perpendicular to it increases by as much as 25%. Thus, the low energy properties with small uniaxial strains can be described by the generalized Weyl's equation while massless and massive electrons coexist with large ones. The work function is also predicted to increase substantially as both the uniaxial and isotropic strain increases. Hence, the homogeneous strain in graphene can be regarded as the effective electronic scalar potential.
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Submitted 24 February, 2010; v1 submitted 6 August, 2009;
originally announced August 2009.
