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Hallmarks of Hund's coupling in the Mott insulator Ca$_2$RuO$_4$
Authors:
D. Sutter,
C. G. Fatuzzo,
S. Moser,
M. Kim,
R. Fittipaldi,
A. Vecchione,
V. Granata,
Y. Sassa,
F. Cossalter,
G. Gatti,
M. Grioni,
H. M. Ronnow,
N. C. Plumb,
C. E. Matt,
M. Shi,
M. Hoesch,
T. K. Kim,
T. R. Chang,
H. T. Jeng,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
A. Georges,
T. Neupert,
J. Chang
Abstract:
A paradigmatic case of multi-band Mott physics including spin-orbit and Hund's coupling is realised in Ca$_2$RuO$_4$. Progress in understanding the nature of this Mott insulating phase has been impeded by the lack of knowledge about the low-energy electronic structure. Here we provide -- using angle-resolved photoemission electron spectroscopy -- the band structure of the paramagnetic insulating p…
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A paradigmatic case of multi-band Mott physics including spin-orbit and Hund's coupling is realised in Ca$_2$RuO$_4$. Progress in understanding the nature of this Mott insulating phase has been impeded by the lack of knowledge about the low-energy electronic structure. Here we provide -- using angle-resolved photoemission electron spectroscopy -- the band structure of the paramagnetic insulating phase of Ca$_2$RuO$_4$ and show how it features several distinct energy scales. Comparison to a simple analysis of atomic multiplets provides a quantitative estimate of the Hund's coupling $J=0.4$ eV. Furthermore, the experimental spectra are in good agreement with electronic structure calculations performed with Dynamical Mean-Field Theory. The crystal field stabilisation of the d$_{xy}$ orbital due to $c$-axis contraction is shown to be important in explaining the nature of the insulating state. It is thus a combination of multiband physics, Coulomb interaction and Hund's coupling that generates the Mott insulating state of Ca$_2$RuO$_4$. These results underscore the importance of Hund's coupling in the ruthenates and related multiband materials.
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Submitted 10 October, 2016;
originally announced October 2016.
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Enhanced thermoelectric performance in thin films of three-dimensional topological insulators
Authors:
T. H. Wang,
H. T. Jeng
Abstract:
Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological insulator and the emerging nanotechnology open a new way to design high-performance TE devices. In this paper, we investigate the TE transport properties of the Bi2S…
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Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological insulator and the emerging nanotechnology open a new way to design high-performance TE devices. In this paper, we investigate the TE transport properties of the Bi2Se3 thin film by the first-principle calculations and the Boltzmann transport theory. By comparing our calculations with the earlier experimental data, we demonstrate that, for the Bi2Se3 film of thickness larger than six quintuple layers, the relaxation time of the topological surface states in the bulk gap is about hundreds of femtoseconds, which is about two orders larger than that of the bulk states. Such a large relaxation-time difference causes the ratio of the electrical conductance to the thermal conductance much larger than the value predicted by the Wiedemann-Franz law, as well as the large magnitude of Seebeck coefficient, and consequently the large TE figure of merit, when the Fermi level is near the conduction band edge. We shows that the TE performance can be further improved by introducing defects in the middle layers of the thin film. The improvement is generally significant at room temperature and can be further enhanced at higher temperature.
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Submitted 1 August, 2016;
originally announced August 2016.
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Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions
Authors:
Lin Niu,
Xinfeng Liu,
Chunxiao Cong,
Chunyang Wu,
Di Wu,
Tay Rong Chang,
Hong Wang,
Qingsheng Zeng,
Jiadong Zhou,
Xingli Wang,
Wei Fu,
Peng Yu,
Qundong Fu,
Sina Najmaei,
Zhuhua Zhang,
Boris I. Yakobson,
Beng Kang Tay,
Wu Zhou,
Horng Tay Jeng,
Hsin Lin,
Tze Chien Sum,
Chuanhong Jin,
Haiyong He,
Ting Yu,
Zheng Liu
Abstract:
Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth o…
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Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.
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Submitted 18 June, 2015; v1 submitted 10 June, 2015;
originally announced June 2015.
