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Bessel beam fabrication of graphitic micro electrodes in diamond using laser bursts
Authors:
Akhil Kuriakose,
Francesco P. Mezzapesa,
Caterina Gaudiuso,
Andrea Chiappini,
Federico Picollo,
Antonio Ancona,
Ottavia Jedrkiewicz
Abstract:
We present the fabrication of conductive graphitic microelectrodes in diamond by using pulsed Bessel beams in the burst mode laser writing regime. The graphitic wires are created in the bulk of a 500 μm thick monocrystalline HPHT diamond (with (100) orientation) perpendicular to the sample surface, without beam scanning or sample translation. In particular, the role of different burst features in…
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We present the fabrication of conductive graphitic microelectrodes in diamond by using pulsed Bessel beams in the burst mode laser writing regime. The graphitic wires are created in the bulk of a 500 μm thick monocrystalline HPHT diamond (with (100) orientation) perpendicular to the sample surface, without beam scanning or sample translation. In particular, the role of different burst features in the resistivity of such electrodes is investigated for two very different sub-pulse durations namely 200 fs and 10 ps, together with the role of thermal annealing. Micro-Raman spectroscopy is implemented to investigate the laser-induced crystalline modification, and the results obtained by using two different laser repetition rates, namely 20 Hz and 200 kHz, are compared. A comparison of the micro-Raman spectra and of the resistivity of the electrodes fabricated respectively with 10 ps single pulses and with bursts (of sub-pulses) of similar total duration has also been made, and we show that the burst mode writing regime allows to fabricate more conductive micro electrodes, thanks to the heat accumulation process leading to stronger graphitization. Moreover, the microfabrication of diamond by means of the longest available bursts (~ 46.7 ps duration) featured by 32 sub-pulses of 200 fs duration, with intra-burst time delay of 1.5 ps (sub-THz bursts), leads to graphitic wires with the lowest resistivity values obtained in this work, especially at low repetition rate such as 20 Hz. Indeed, micro electrodes with resistivity on the order of 0.01 Ω cm can be fabricated by Bessel beams in the burst mode regime even when the bursts are constituted by femtosecond laser sub-pulses, in contrast with the results of the standard writing regime with single fs pulses typically leading to less conductive micro electrodes.
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Submitted 3 June, 2024;
originally announced June 2024.
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Effect of Crystallographic Orientation on the Potential Barrier and Conductivity of Bessel Written Graphitic Electrodes in Diamond
Authors:
Akhil Kuriakose,
Andrea Chiappini,
Pietro Apra,
Ottavia Jedrkiewicz
Abstract:
Ultrafast laser micromachining can be used to promote diamond graphitisation, enabling the creation of electrically conductive wires embedded in the diamond matrix. In this context, the presence of a potential barrier in the conductivity of transverse graphitic wires fabricated by pulsed Bessel beams without sample translation across 500 μm thick monocrystalline CVD diamond has been studied. In pa…
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Ultrafast laser micromachining can be used to promote diamond graphitisation, enabling the creation of electrically conductive wires embedded in the diamond matrix. In this context, the presence of a potential barrier in the conductivity of transverse graphitic wires fabricated by pulsed Bessel beams without sample translation across 500 μm thick monocrystalline CVD diamond has been studied. In particular, the role of the crystallographic orientation has been analysed. The morphology and the conductivity of the obtained electrodes have been studied using optical microscopy and current-voltage measurements, while the structural changes have been investigated by means of micro-Raman spectroscopy. By using different laser writing parameters, we have explored the features of different electrodes in a (100) and a (110) oriented diamond crystal respectively. We show that in addition to the use of specific pulse energies and durations (in the fs and ps regimes), the crystallographic orientation of the sample plays an important role in reducing or eliminating the potential barrier height of the IV electrical characterization curves. In a (110) oriented sample, it is possible to eradicate the potential barrier completely even for graphitic wires fabricated at low pulse energy and in the fs pulse duration regime, in contrast to the (100) oriented-crystal case where the barrier is generally observed.
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Submitted 4 January, 2024;
originally announced January 2024.
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Evaluation of microscale crystallinity modification induced by laser writing on Mn3O4 thin films
Authors:
Camila Ianhez-Pereira,
Akhil Kuriakose,
Ariano De Giovanni Rodrigues,
Ana Luiza Costa Silva,
Ottavia Jedrkiewicz,
Monica Bollani,
Marcio Peron Franco de Godoy
Abstract:
Defining microstructures and managing local crystallinity allow the implementation of several functionalities in thin film technology. The use of ultrashort Bessel beams for bulk crystallinity modification has garnered considerable attention as a versatile technique for semiconductor materials, dielectrics, or metal oxide substrates. The aim of this work is the quantitative evaluation of the cryst…
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Defining microstructures and managing local crystallinity allow the implementation of several functionalities in thin film technology. The use of ultrashort Bessel beams for bulk crystallinity modification has garnered considerable attention as a versatile technique for semiconductor materials, dielectrics, or metal oxide substrates. The aim of this work is the quantitative evaluation of the crystalline changes induced by ultrafast laser micromachining on manganese oxide thin films using micro-Raman spectroscopy. Pulsed Bessel beams featured by a 1 micrometer-sized central core are used to define structures with high spatial precision. The dispersion relation of Mn3O4 optical phonons is determined by considering the conjunction between X-ray diffraction characterization and the phonon localization model. The asymmetries in Raman spectra indicate phonon localization and enable a quantitative tool to determine the crystallite size at micrometer resolution. The results indicate that laser-writing is effective in modifying the low-crystallinity films locally, increasing crystallite sizes from ~8 nm up to 12 nm, and thus highlighting an interesting approach to evaluate laser-induced structural modifications on metal oxide thin films.
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Submitted 27 November, 2023;
originally announced November 2023.
