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Thickness dependence of magnetization reversal and magnetostriction in FeGa thin films
Authors:
W. Jahjah,
R. Manach,
Y. Le Grand,
A. Fessant,
B. Warot-Fonrose,
A. R. E. Prinsloo,
C. J. Sheppard,
D. T. Dekadjevi,
D. Spenato,
J. -Ph. Jay
Abstract:
Among the magnetostrictive alloys the one formed of iron and gallium (called "Galfenol" from its U.S. Office of Naval Research discoverers in the late 90's) is attractive for its low hysteresis, good tensile stress, good machinability and its rare-earth free composition. One of its applications is its association with a piezoelectric material to form a extrinsic multiferroic composite as an altern…
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Among the magnetostrictive alloys the one formed of iron and gallium (called "Galfenol" from its U.S. Office of Naval Research discoverers in the late 90's) is attractive for its low hysteresis, good tensile stress, good machinability and its rare-earth free composition. One of its applications is its association with a piezoelectric material to form a extrinsic multiferroic composite as an alternative to the rare room temperature intrinsic multiferroics such as BiFeO$_3$. This study focuses on thin Fe$_{0.81}$Ga$_{0.19}$ films of thickness 5, 10, 20 and 60 nm deposited by sputtering onto glass substrates. Magnetization reversal study reveals a well-defined symmetry with two principal directions independent of the thickness. The magnetic signature of this magnetic anisotropy decreases with increasing FeGa thickness due to an increase of the non-preferential polycrystalline arrangement, as revealed by transmission electron microscopy (TEM) observations. Thus when magnetic field is applied along these specific directions, magnetization reversal is mainly coherent for the thinnest sample as seen from the transverse magnetization cycles. Magnetostriction coefficient reaches 20 ppm for the 5 nm film and decreases for thicker samples, where polycrystalline part with non-preferential orientation prevails.
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Submitted 25 March, 2019; v1 submitted 13 March, 2019;
originally announced March 2019.
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Spin pumping as a generic probe for linear spin fluctuations: demonstration with ferromagnetic and antiferromagnetic orders, metallic and insulating electrical states
Authors:
O. Gladii,
L. Frangou,
G. Forestier,
R. L. Seeger,
S. Auffret,
M. Rubio-Roy,
R. Weil,
A. Mougin,
C. Gomez,
W. Jahjah,
J. -P. Jay,
D. Dekadjevi,
D. Spenato,
S. Gambarelli,
V. Baltz
Abstract:
We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pumping due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn…
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We investigated spin injection by spin pumping from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pumping due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn). Results also represent systematic experimental investigation supporting that the effect is independent of the metallic and insulating nature of the spin-sink, and is observed whether the spin current probe involves electronic or magnonic transport, facilitating advances in material characterization and engineering for spintronic applications.
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Submitted 11 January, 2019;
originally announced January 2019.
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Direct and inverse measurement of thin films magnetostriction
Authors:
J. -Ph. Jay,
F. Le Berre,
S. P. Pogossian,
M. V. Indenbom
Abstract:
Two techniques of measurements of thin film magnetostriction are compared: direct, when changes of the substrate curvature caused by the film magnetization are controlled, and inverse ("indirect"), when the modification of the magnetic anisotropy induced by the substrate deformation (usually bending) is measured. We demonstrate how both the elastic strength of the substrate and the effective mag…
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Two techniques of measurements of thin film magnetostriction are compared: direct, when changes of the substrate curvature caused by the film magnetization are controlled, and inverse ("indirect"), when the modification of the magnetic anisotropy induced by the substrate deformation (usually bending) is measured. We demonstrate how both the elastic strength of the substrate and the effective magneto-mechanical coupling between the substrate deformation and magnetic anisotropy of the film depend on different conditions of bending. Equations to be used for magnetostriction value determination in typical cases are given and critical parameters for the corresponding approximations are identified.
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Submitted 10 November, 2009;
originally announced November 2009.
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Magnetostrictive hysteresis of TbCo/CoFe multilayers and magnetic domains
Authors:
J. -Ph. Jay,
F. Petit,
J. Ben Youssef,
M. V. Indenbom,
A. Thiaville,
J. Miltat
Abstract:
Magnetic and magnetostrictive hysteresis loops of TbCo/CoFe multilayers under field applied along the hard magnetization axis are studied using vectorial magnetization measurements, optical deflectometry and magneto optical Kerr microscopy. Even a very small angle misalignment between hard axis and magnetic field direction is shown to drastically change the shape of magnetization and magnetostri…
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Magnetic and magnetostrictive hysteresis loops of TbCo/CoFe multilayers under field applied along the hard magnetization axis are studied using vectorial magnetization measurements, optical deflectometry and magneto optical Kerr microscopy. Even a very small angle misalignment between hard axis and magnetic field direction is shown to drastically change the shape of magnetization and magnetostrictive torsion hysteresis loops. Two kinds of magnetic domains are revealed during the magnetization: big regions with opposite rotation of spontaneous magnetization vector and spontaneous magnetic domains which appear in a narrow field interval and provide an inversion of this rotation.
We show that the details of the hysteresis loops of our exchange-coupled films can be described using the classical model of homogeneous magnetization rotation of single uniaxial films and the configuration of observed domains. The understanding of these features is crucial for applications (for MEMS or microactuators) which benefit from the greatly enhanced sensitivity near the point of magnetic saturation at the transverse applied field.
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Submitted 21 October, 2005;
originally announced October 2005.
