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Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$
Authors:
Thomas E Beechem,
Fernando Vega,
Samantha T. Jaszewski,
Benjamin L. Aronson,
Kyle P. Kelley,
Jon F. Ihlefeld
Abstract:
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTI…
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Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group $Pca2_1$) resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, post-synthesis, and low-entry method to modify phase in \hfo-based materials.
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Submitted 17 June, 2024;
originally announced June 2024.
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Ferroelectric domain nucleation and switching pathways in hafnium oxide
Authors:
Sebastian Calderon V,
Samantha T. Jaszewski,
Kyle P. Kelley,
Jon F. Ihlefeld,
Elizabeth Dickey
Abstract:
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide (HfO2), remain in a state of development, and a clear understanding of the effects of relevant compositional and processing parameters to control their ferroele…
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Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide (HfO2), remain in a state of development, and a clear understanding of the effects of relevant compositional and processing parameters to control their ferroelectric properties and the actual polarization switching mechanisms are still under investigation. One key fundamental knowledge gap is the polarization switching pathway in ferroelectric hafnia. To further our fundamental understanding of domain nucleation and switching, we have studied polarization switching pathways in HfO2-x thin films in real-time at the atomic scale using transmission electron microscopy. We employed differential phase contrast imaging that allows for the acquisition of both hafnium and oxygen atomic column signals and facilitates the observation of relative movement of atomic columns between both sublattices. Our results demonstrate that the switching pathway involves a transient tetragonal-like local structure, as oxygen ions shift in locations and remain within their parent hafnium polyhedra.
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Submitted 28 November, 2023;
originally announced November 2023.
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Ferroelectricity in Hafnia Controlled via Surface Electrochemical State
Authors:
Kyle P. Kelley,
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Shelby S. Fields,
Samantha T. Jaszewski,
Takanori Mimura,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions s…
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Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.
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Submitted 25 July, 2022;
originally announced July 2022.
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Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides
Authors:
Maria Gabriela Sales,
Samantha T. Jaszewski,
Shelby S. Fields,
Jon F. Ihlefeld,
Stephen J. McDonnell
Abstract:
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 an…
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Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We show that the nucleation and stability of HZO grown through atomic layer deposition (ALD) varied depending on functionalization of the TMDC, and the deposition conditions can cause tungsten oxidation in WSe2. It was observed that HZO deposited on non-functionalized MoS2 was unstable and volatile upon annealing, while HZO on functionalized MoS2 was stable in the 400-800 °C range. The HZO/WSe2 interface was stable until 700 °C, after which Se began to evolve from the WSe2. In addition, there is evidence of oxygen vacancies in the HZO film being passivated at high temperatures. Lastly, X-ray diffraction (XRD) was used to confirm crystallization of the HZO within the temperature range studied.
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Submitted 30 July, 2020;
originally announced July 2020.
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Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs
Authors:
H. -Y. Yang,
T. Nummy,
H. Li,
S. Jaszewski,
M. Abramchuk,
D. S. Dessau,
Fazel Tafti
Abstract:
The family of binary Lanthanum monopnictides, LaBi and LaSb, have attracted a great deal of attention as they display an unusual extreme magnetoresistance (XMR) that is not well understood. Two classes of explanations have been raised for this: the presence of non-trivial topology, and the compensation between electron and hole densities. Here, by synthesizing a new member of the family, LaAs, and…
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The family of binary Lanthanum monopnictides, LaBi and LaSb, have attracted a great deal of attention as they display an unusual extreme magnetoresistance (XMR) that is not well understood. Two classes of explanations have been raised for this: the presence of non-trivial topology, and the compensation between electron and hole densities. Here, by synthesizing a new member of the family, LaAs, and performing transport measurements, Angle Resolved Photoemission Spectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we show that (a) LaAs retains all qualitative features characteristic of the XMR effect but with a siginificant reduction in magnitude compared to LaSb and LaBi, (b) the absence of a band inversion or a Dirac cone in LaAs indicates that topology is insignificant to XMR, (c) the equal number of electron and hole carriers indicates that compensation is necessary for XMR but does not explain its magnitude, and (d) the ratio of electron and hole mobilities is much different in LaAs compared to LaSb and LaBi. We argue that the compensation is responsible for the XMR profile and the mobility mismatch constrains the magnitude of XMR.
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Submitted 28 March, 2018;
originally announced March 2018.
