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Integrated astrophotonic phase control for high resolution optical interferometry
Authors:
Ross Cheriton,
Siegfried Janz,
Glen Herriot,
Jean-Pierre Véran,
Brent Carlson
Abstract:
Long baseline optical interferometry and aperture synthesis using ground-based telescopes can enable unprecedented angular resolution astronomy in the optical domain. However, atmospheric turbulence leads to large, dynamic phase errors between participating apertures that limit fringe visibility using telescopes arrays or subaperture configurations in a single large telescope. Diffraction limited…
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Long baseline optical interferometry and aperture synthesis using ground-based telescopes can enable unprecedented angular resolution astronomy in the optical domain. However, atmospheric turbulence leads to large, dynamic phase errors between participating apertures that limit fringe visibility using telescopes arrays or subaperture configurations in a single large telescope. Diffraction limited optics or adaptive optics can be used to ensure coherence at each aperture, but correlating the phase between apertures requires high speed, high stroke phase correction and recombination that is extremely challenging and costly. As a solution, we show an alternative phase correction and beam combination method using a centimeter-scale silicon astrophotonic chip optimized for H-band operation. The 4.7x10mm silicon photonic chip is fabricated using electron beam lithography with devices with 2 up to 32 independent channels. Light is coupled into the chip using single mode fiber ribbons. An array of microheaters is used to individually tune the effective index of each spiral delay waveguides. Narrowband spectral splitters at each spatial channel divert a modulated digital reference signal from an artificial guide star off-chip for phase measurement. Science light from other wavelengths is coherently combined using on-chip beam combiners and outputted to a single waveguide. We described the role, design, fabrication and characterization of the photonic chip. This photonic phase control scheme can be applied in astronomical interferometry or optical satellite communications.
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Submitted 12 August, 2024;
originally announced August 2024.
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Formation of silicon nanocrystals in silicon carbide using flash lamp annealing
Authors:
C. Weiss,
M. Schnabel,
S. Prucnal,
J. Hofmann,
A. Reichert,
T. Fehrenbach,
W. Skorupa,
S. Janz
Abstract:
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the fo…
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During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated Si$_x$C$_{1-x}$ films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700$°$C to 1100$°$C for RTA and at flash energies between 34 J/cm$^2$ and 62 J/cm$^2$ for FLA. GIXRD and FTIR were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm$^2$ and 47 J/cm$^2$ for Si$_{0.63}$C$_{0.37}$ and Si$_{0.77}$C$_{0.23}$ samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content.
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Submitted 15 May, 2020;
originally announced May 2020.
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Structural and optical properties of silicon nanocrystals embedded in silicon carbide
Authors:
C. Weiss,
M. Schnabel,
A. Reichert,
P. Löper,
S. Janz
Abstract:
The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and that a multilayer (ML) structure is suitable for such fabrication only in a narrow parameter range. This parameter range is sought by varying both the…
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The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and that a multilayer (ML) structure is suitable for such fabrication only in a narrow parameter range. This parameter range is sought by varying both the stoichiometric SiC barrier thickness and the Si-rich SiC well thickness between 3 and 9 nm and comparing them to single layers (SL). The samples processed for this investigation were deposited by plasma-enhanced chemical vapor deposition (PECVD) and subsequently subjected to thermal annealing at 1000-1100$°$C for crystal formation. Bulk information about the entire sample area and depth were obtained by structural and optical characterization methods: information about the mean Si NC size was determined from grazing incidence X-ray diffraction (GIXRD) measurements. Fourier-transform infrared spectroscopy (FTIR) was applied to gain insight into the structure of the Si-C network, and spectrophotometry measurements were performed to investigate the absorption coefficient and to estimate the bandgap $E_{04}$. All measurements showed that the influence of the ML structure on the Si NC size, on the Si-C network and on the absorption properties is subordinate to the influence of the overall Si content in the samples, which we identified as the key parameter for the structural and optical properties. We attribute this behavior to interdiffusion of the barrier and well layers. Because the produced Si NC are within the target size range of 2-4 nm for all layer thickness variations, we propose to use the Si content to adjust the Si NC size in future experiments.
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Submitted 15 May, 2020;
originally announced May 2020.
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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
Authors:
C. Weiss,
S. Park,
J. Lefèvre,
B. Boizot,
C. Mohr,
O. Cavani,
S. Picard,
R. Kurstjens,
T. Niewelt,
S. Janz
Abstract:
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and a…
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We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe $τ_{eff}$ ranging from 50 to 230 $μ$s for Ge doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusion lengths of 500-1400 $μ$m. A separation of $τ_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.
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Submitted 15 May, 2020;
originally announced May 2020.
