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Hidden structural transition in epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$/SrTiO$_{3}$ thin film
Authors:
W. T. Jin,
H. Gretarsson,
S. Y. Jang,
Chang-Yong Kim,
T. W. Noh,
Young-june Kim
Abstract:
A structural transition in an ABO$_{3}$ perovskite thin film involving the change of the BO$_{6}$ octahedral rotation pattern can be hidden under the global lattice symmetry imposed by the substrate and often easily overlooked. We carried out high-resolution x-ray diffraction experiments to investigate the structures of epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$ (CSIO) perovskite iridate films grown…
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A structural transition in an ABO$_{3}$ perovskite thin film involving the change of the BO$_{6}$ octahedral rotation pattern can be hidden under the global lattice symmetry imposed by the substrate and often easily overlooked. We carried out high-resolution x-ray diffraction experiments to investigate the structures of epitaxial Ca$_{0.5}$Sr$_{0.5}$IrO$_{3}$ (CSIO) perovskite iridate films grown on the SrTiO$_{3}$ (STO) and GdScO$_{3}$ (GSO) substrates in detail. Although the CSIO/STO film layer displays a global tetragonal lattice symmetry evidenced by the reciprocal space mapping, synchrotron x-ray data indicates that its room temperature structure is monoclinic due to Glazer's a$^{+}$a$^{-}$c$^{-}$-type rotation of the IrO$_{6}$ octahedra. In order to accommodate the lower-symmetry structure under the global tetragonal symmetry, the film breaks into four twinned domains, resulting in the splitting of the (half-integer, 0, integer) superlattice reflections. Surprisingly, the splitting of these superlattice reflections decrease with increasing temperature, eventually disappearing at T$_{S}$ = 510(5) K, which signals a structural transition to an orthorhombic phase with a$^{+}$a$^{-}$c$^{0}$ octahedral rotation. In contrast, the CSIO/GSO film displays a stable monoclinic symmetry with a$^{+}$b$^{-}$c$^{-}$ octahedral rotation, showing no structural instability caused by the substrate up to 520 K. Our study illustrates the importance of the symmetry in addition to the lattice mismatch of the substrate in determining the structure of epitaxial thin films.
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Submitted 1 November, 2019;
originally announced November 2019.
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Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
Authors:
Daesu Lee,
A. Yoon,
S. Y. Jang,
J. -G. Yoon,
J. -S. Chung,
M. Kim,
J. F. Scott,
T. W. Noh
Abstract:
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and ele…
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We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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Submitted 19 June, 2011;
originally announced June 2011.
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Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices
Authors:
Woo Seok Choi,
D. W. Jeong,
S. S. A. Seo,
Y. S. Lee,
T. H. Kim,
S. Y. Jang,
H. N. Lee,
K. Myung-Whun
Abstract:
We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of…
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We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect.
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Submitted 2 March, 2011;
originally announced March 2011.
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Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films
Authors:
T. H. Kim,
S. H. Baek,
S. Y. Jang,
S. M. Yang,
S. H. Chang,
T. K. Song,
J. -G. Yoon,
C. B. Eom,
J. -S. Chung,
T. W. Noh
Abstract:
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted…
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Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.
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Submitted 3 January, 2011;
originally announced January 2011.
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The electronic structure of epitaxially stabilized 5d perovskite Ca_{1-x}Sr_xIrO_3 (x = 0, 0.5, and 1) thin films: the role of strong spin-orbit coupling
Authors:
S. Y. Jang,
H. S. Kim,
S. J. Moon,
W. S. Choi,
B. C. Jeon,
J. Yu,
T. W. Noh
Abstract:
We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 subs…
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We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 substrates using epi-stabilization technique. The transport properties of the perovskite Ca1-xSrxIrO3 films systematically changed from nearly insulating (or semi-metallic) for x = 0 to bad metallic for x = 1. Due to the extended wavefunctions, 5d electrons are usually delocalized. However, the strong spin-orbit coupling in Ca1-xSrxIrO3 results in the formation of effective total angular momentum Jeff = 1/2 and 3/2 states, which puts Ca1-xSrxIrO3 in the vicinity of a metal-insulator phase boundary. As a result, the electrical properties of the Ca1-xSrxIrO3 films are found to be sensitive to x and strain.
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Submitted 24 November, 2009;
originally announced November 2009.
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Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films
Authors:
T. H. Kim,
S. -H. Baek,
S. M. Yang,
S. Y. Jang,
D. Ortiz,
T. K. Song,
J. -S. Chung,
C. -B. Eom,
T. W. Noh,
J. -G. Yoon
Abstract:
We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influenc…
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We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.
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Submitted 30 September, 2009;
originally announced September 2009.
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Effects of oxygen-reducing atmosphere annealing on LaMnO$_3$ epitaxial thin films
Authors:
W S Choi,
Z Marton,
S Y Jang,
S J Moon,
B C Jeon,
J H Shin,
S S A Seo,
T W Noh,
K Myung-Whun,
H N Lee,
Y S Lee
Abstract:
We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the a…
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We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently indicate non-stoichiometric ferromagnetic and semiconducting phases for as-grown LaMnO$_3$ films. By annealing in an oxygen-reducing atmosphere, we recovered the antiferromagnetic and insulating phases of bulk-like stoichiometric LaMnO$_3$. We show that non-destructive optical spectroscopy at room temperature is one of the most convenient tools for identifying the phases of LaMnO$_3$ films. Our results serve as a prerequisite in studying LaMnO$_3$ based heterostructures grown by pulsed laser deposition.
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Submitted 13 July, 2009;
originally announced July 2009.
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Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films
Authors:
S. Y. Jang,
D. Lee,
J. -H. Lee,
T. W. Noh,
Y. Jo,
M. -H. Jung,
J. -S. Chung
Abstract:
Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass…
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Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.
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Submitted 29 January, 2009;
originally announced January 2009.
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Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films
Authors:
Daesu Lee,
Heung-Sik Kim,
Seung Yup Jang,
Kwon Woo Joh,
Tae Won Noh,
Jaejun Yu,
Cheol Eui Lee,
Jong-Gul Yoon
Abstract:
We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first princip…
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We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first principles calculations reveal that the defect dipoles would be composed of oxygen vacancy and Fe1+ defect. We discuss migration of charged point defects during film growth process and formation of defect dipoles along ferroelectric polarization direction, based on the site preference of point defects. Due to a high-temperature low-symmetry structure of HoMnO3, aging is not required to form the defect dipoles in contrast to other ferroelectrics (e.g., BaTiO3).
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Submitted 13 January, 2010; v1 submitted 29 January, 2009;
originally announced January 2009.
