Showing 1–50 of 57 results for author: Janßen, J

A Python workflow definition for computational materials design

Authors: Jan Janssen, Janine George, Julian Geiger, Marnik Bercx, Xing Wang, Christina Ertural, Joerg Schaarschmidt, Alex M. Ganose, Giovanni Pizzi, Tilmann Hickel, Joerg Neugebauer

Abstract: Numerous Workflow Management Systems (WfMS) have been developed in the field of computational materials science with different workflow formats, hindering interoperability and reproducibility of workflows in the field. To address this challenge, we introduce here the Python Workflow Definition (PWD) as a workflow exchange format to share workflows between Python-based WfMS, currently AiiDA, jobflo… ▽ More Numerous Workflow Management Systems (WfMS) have been developed in the field of computational materials science with different workflow formats, hindering interoperability and reproducibility of workflows in the field. To address this challenge, we introduce here the Python Workflow Definition (PWD) as a workflow exchange format to share workflows between Python-based WfMS, currently AiiDA, jobflow, and pyiron. This development is motivated by the similarity of these three Python-based WfMS, that represent the different workflow steps and data transferred between them as nodes and edges in a graph. With the PWD, we aim at fostering the interoperability and reproducibility between the different WfMS in the context of Findable, Accessible, Interoperable, Reusable (FAIR) workflows. To separate the scientific from the technical complexity, the PWD consists of three components: (1) a conda environment that specifies the software dependencies, (2) a Python module that contains the Python functions represented as nodes in the workflow graph, and (3) a workflow graph stored in the JavaScript Object Notation (JSON). The first version of the PWD supports directed acyclic graph (DAG)-based workflows. Thus, any DAG-based workflow defined in one of the three WfMS can be exported to the PWD and afterwards imported from the PWD to one of the other WfMS. After the import, the input parameters of the workflow can be adjusted and computing resources can be assigned to the workflow, before it is executed with the selected WfMS. This import from and export to the PWD is enabled by the PWD Python library that implements the PWD in AiiDA, jobflow, and pyiron. △ Less

Submitted 26 May, 2025; originally announced May 2025.

34 Examples of LLM Applications in Materials Science and Chemistry: Towards Automation, Assistants, Agents, and Accelerated Scientific Discovery

Authors: Yoel Zimmermann, Adib Bazgir, Alexander Al-Feghali, Mehrad Ansari, Joshua Bocarsly, L. Catherine Brinson, Yuan Chiang, Defne Circi, Min-Hsueh Chiu, Nathan Daelman, Matthew L. Evans, Abhijeet S. Gangan, Janine George, Hassan Harb, Ghazal Khalighinejad, Sartaaj Takrim Khan, Sascha Klawohn, Magdalena Lederbauer, Soroush Mahjoubi, Bernadette Mohr, Seyed Mohamad Moosavi, Aakash Naik, Aleyna Beste Ozhan, Dieter Plessers, Aritra Roy , et al. (10 additional authors not shown)

Abstract: Large Language Models (LLMs) are reshaping many aspects of materials science and chemistry research, enabling advances in molecular property prediction, materials design, scientific automation, knowledge extraction, and more. Recent developments demonstrate that the latest class of models are able to integrate structured and unstructured data, assist in hypothesis generation, and streamline resear… ▽ More Large Language Models (LLMs) are reshaping many aspects of materials science and chemistry research, enabling advances in molecular property prediction, materials design, scientific automation, knowledge extraction, and more. Recent developments demonstrate that the latest class of models are able to integrate structured and unstructured data, assist in hypothesis generation, and streamline research workflows. To explore the frontier of LLM capabilities across the research lifecycle, we review applications of LLMs through 34 total projects developed during the second annual Large Language Model Hackathon for Applications in Materials Science and Chemistry, a global hybrid event. These projects spanned seven key research areas: (1) molecular and material property prediction, (2) molecular and material design, (3) automation and novel interfaces, (4) scientific communication and education, (5) research data management and automation, (6) hypothesis generation and evaluation, and (7) knowledge extraction and reasoning from the scientific literature. Collectively, these applications illustrate how LLMs serve as versatile predictive models, platforms for rapid prototyping of domain-specific tools, and much more. In particular, improvements in both open source and proprietary LLM performance through the addition of reasoning, additional training data, and new techniques have expanded effectiveness, particularly in low-data environments and interdisciplinary research. As LLMs continue to improve, their integration into scientific workflows presents both new opportunities and new challenges, requiring ongoing exploration, continued refinement, and further research to address reliability, interpretability, and reproducibility. △ Less

Submitted 15 May, 2025; v1 submitted 5 May, 2025; originally announced May 2025.

Comments: arXiv admin note: substantial text overlap with arXiv:2411.15221. This paper is a refinement and analysis of the raw project submissions from arXiv:2411.15221

Magnetic properties and growth kinetics of Co/Gd bilayers with perpendicular magnetic anisotropy

Authors: T. J. Kools, J. Hintermayr, Y. L. W. van Hees, K. Poissonnier, M. C. H. de Jong, J. T. J. M. Janssen, B. Koopmans, R. Lavrijsen

Abstract: Ultrathin 3d-4f synthetic ferrimagnets with perpendicular magnetic anisotropy (PMA) exhibit a range of intriguing magnetic phenomena, including all-optical switching of magnetization (AOS), fast current-induced domain wall motion (CIDWM), and the potential to act as orbital-to-spin angular momentum converters. For spintronic applications involving these materials, the Curie temperature is a crucia… ▽ More Ultrathin 3d-4f synthetic ferrimagnets with perpendicular magnetic anisotropy (PMA) exhibit a range of intriguing magnetic phenomena, including all-optical switching of magnetization (AOS), fast current-induced domain wall motion (CIDWM), and the potential to act as orbital-to-spin angular momentum converters. For spintronic applications involving these materials, the Curie temperature is a crucial factor in determining not only the threshold energy for AOS, but also the material's resistance to temperature rise during CIDWM. However, the relationship between the Curie temperature, the thicknesses of the individual layers, and the specifics of the growth process remains an open question. In this work, we thoroughly investigate the Curie temperature of one of the archetype synthetic ferrimagnets with PMA, the Pt/Co/Gd trilayer, grown by DC magnetron sputtering and characterized with MOKE and SQUID. We provide an interpretation of the experiments we designed to address these outstanding questions through modeling of the deposition process and the induced magnetization at the Co/Gd interface. Our findings demonstrate that the Curie temperature and, by extension, the conditions for PMA and magnetic compensation, of these ultrathin 3d-4f synthetic ferrimagnets are not only impacted by the interface quality, which can be influenced by the sputtering process, but also to a significant extent by finite-size effects in the 4f-material. This work offers new methods and understanding to predict and manipulate the critical temperature and magnetostatic properties of 3d-4f synthetic ferrimagnets for spintronic applications and magneto-photonic integration. △ Less

Submitted 4 December, 2024; originally announced December 2024.

Reflections from the 2024 Large Language Model (LLM) Hackathon for Applications in Materials Science and Chemistry

Authors: Yoel Zimmermann, Adib Bazgir, Zartashia Afzal, Fariha Agbere, Qianxiang Ai, Nawaf Alampara, Alexander Al-Feghali, Mehrad Ansari, Dmytro Antypov, Amro Aswad, Jiaru Bai, Viktoriia Baibakova, Devi Dutta Biswajeet, Erik Bitzek, Joshua D. Bocarsly, Anna Borisova, Andres M Bran, L. Catherine Brinson, Marcel Moran Calderon, Alessandro Canalicchio, Victor Chen, Yuan Chiang, Defne Circi, Benjamin Charmes, Vikrant Chaudhary , et al. (119 additional authors not shown)

Abstract: Here, we present the outcomes from the second Large Language Model (LLM) Hackathon for Applications in Materials Science and Chemistry, which engaged participants across global hybrid locations, resulting in 34 team submissions. The submissions spanned seven key application areas and demonstrated the diverse utility of LLMs for applications in (1) molecular and material property prediction; (2) mo… ▽ More Here, we present the outcomes from the second Large Language Model (LLM) Hackathon for Applications in Materials Science and Chemistry, which engaged participants across global hybrid locations, resulting in 34 team submissions. The submissions spanned seven key application areas and demonstrated the diverse utility of LLMs for applications in (1) molecular and material property prediction; (2) molecular and material design; (3) automation and novel interfaces; (4) scientific communication and education; (5) research data management and automation; (6) hypothesis generation and evaluation; and (7) knowledge extraction and reasoning from scientific literature. Each team submission is presented in a summary table with links to the code and as brief papers in the appendix. Beyond team results, we discuss the hackathon event and its hybrid format, which included physical hubs in Toronto, Montreal, San Francisco, Berlin, Lausanne, and Tokyo, alongside a global online hub to enable local and virtual collaboration. Overall, the event highlighted significant improvements in LLM capabilities since the previous year's hackathon, suggesting continued expansion of LLMs for applications in materials science and chemistry research. These outcomes demonstrate the dual utility of LLMs as both multipurpose models for diverse machine learning tasks and platforms for rapid prototyping custom applications in scientific research. △ Less

Submitted 2 January, 2025; v1 submitted 20 November, 2024; originally announced November 2024.

Comments: Updating author information, the submission remains largely unchanged. 98 pages total

Hierarchical Gaussian Process-Based Bayesian Optimization for Materials Discovery in High Entropy Alloy Spaces

Authors: Sk Md Ahnaf Akif Alvi, Jan Janssen, Danial Khatamsaz, Danny Perez, Douglas Allaire, Raymundo Arroyave

Abstract: Bayesian optimization (BO) is a powerful and data-efficient method for iterative materials discovery and design, particularly valuable when prior knowledge is limited, underlying functional relationships are complex or unknown, and the cost of querying the materials space is significant. Traditional BO methodologies typically utilize conventional Gaussian Processes (cGPs) to model the relationship… ▽ More Bayesian optimization (BO) is a powerful and data-efficient method for iterative materials discovery and design, particularly valuable when prior knowledge is limited, underlying functional relationships are complex or unknown, and the cost of querying the materials space is significant. Traditional BO methodologies typically utilize conventional Gaussian Processes (cGPs) to model the relationships between material inputs and properties, as well as correlations within the input space. However, cGP-BO approaches often fall short in multi-objective optimization scenarios, where they are unable to fully exploit correlations between distinct material properties. Leveraging these correlations can significantly enhance the discovery process, as information about one property can inform and improve predictions about others. This study addresses this limitation by employing advanced kernel structures to capture and model multi-dimensional property correlations through multi-task (MTGPs) or deep Gaussian Processes (DGPs), thus accelerating the discovery process. We demonstrate the effectiveness of MTGP-BO and DGP-BO in rapidly and robustly solving complex materials design challenges that occur within the context of complex multi-objective optimization -- carried out by leveraging the pyiron workflow manager over FCC FeCrNiCoCu high entropy alloy (HEA) spaces, where traditional cGP-BO approaches fail. Furthermore, we highlight how the differential costs associated with querying various material properties can be strategically leveraged to make the materials discovery process more cost-efficient. △ Less

Submitted 5 October, 2024; originally announced October 2024.

From electrons to phase diagrams with classical and machine learning potentials: automated workflows for materials science with pyiron

Authors: Sarath Menon, Yury Lysogorskiy, Alexander L. M. Knoll, Niklas Leimeroth, Marvin Poul, Minaam Qamar, Jan Janssen, Matous Mrovec, Jochen Rohrer, Karsten Albe, Jörg Behler, Ralf Drautz, Jörg Neugebauer

Abstract: We present a comprehensive and user-friendly framework built upon the pyiron integrated development environment (IDE), enabling researchers to perform the entire Machine Learning Potential (MLP) development cycle consisting of (i) creating systematic DFT databases, (ii) fitting the Density Functional Theory (DFT) data to empirical potentials or MLPs, and (iii) validating the potentials in a largel… ▽ More We present a comprehensive and user-friendly framework built upon the pyiron integrated development environment (IDE), enabling researchers to perform the entire Machine Learning Potential (MLP) development cycle consisting of (i) creating systematic DFT databases, (ii) fitting the Density Functional Theory (DFT) data to empirical potentials or MLPs, and (iii) validating the potentials in a largely automatic approach. The power and performance of this framework are demonstrated for three conceptually very different classes of interatomic potentials: an empirical potential (embedded atom method - EAM), neural networks (high-dimensional neural network potentials - HDNNP) and expansions in basis sets (atomic cluster expansion - ACE). As an advanced example for validation and application, we show the computation of a binary composition-temperature phase diagram for Al-Li, a technologically important lightweight alloy system with applications in the aerospace industry. △ Less

Submitted 8 March, 2024; originally announced March 2024.

Computationally accelerated experimental materials characterization -- drawing inspiration from high-throughput simulation workflows

Authors: Markus Stricker, Lars Banko, Nik Sarazin, Niklas Siemer, Jan Janssen, Lei Zhang, Jörg Neugebauer, Alfred Ludwig

Abstract: Computational materials science increasingly benefits from data management, automation, and algorithm-based decision-making for the simulation of material properties and behavior. Experimental materials science also changes rapidly by incorporation of `machine learning' in materials discovery campaigns. The obvious benefits which include automation, reproducibility, data provenance, and reusabilit… ▽ More Computational materials science increasingly benefits from data management, automation, and algorithm-based decision-making for the simulation of material properties and behavior. Experimental materials science also changes rapidly by incorporation of `machine learning' in materials discovery campaigns. The obvious benefits which include automation, reproducibility, data provenance, and reusability of managed data, however, is not widely available in the experimental domain. We present an implementation of a Active Learning loop with a direct interface to an experimental measurement device in pyiron, a framework designed for high-throughput simulations, as demonstrator how to combine experimental and simulated data in one framework. Apart from the acceleration provided by the active learning approach, additional acceleration of the experimental characterization is achieved by using prior knowledge from density functional theory simulations as well as composition-property predictions from literature mining using correlations in word embeddings. With data from all domains in the same framework, a heretofore untapped and much-needed potential for the acceleration of materials characterization and materials discovery campaigns becomes available. △ Less

Submitted 27 January, 2025; v1 submitted 9 December, 2022; originally announced December 2022.

Comments: 23 pages, 5 figures, preprint

Automated optimization of convergence parameters in plane wave density functional theory calculations via a tensor decomposition-based uncertainty quantification

Authors: Jan Janssen, Edgar Makarov, Tilmann Hickel, Alexander V. Shapeev, Jörg Neugebauer

Abstract: First principles approaches have revolutionized our ability in using computers to predict, explore and design materials. A major advantage commonly associated with these approaches is that they are fully parameter free. However, numerically solving the underlying equations requires to choose a set of convergence parameters. With the advent of high-throughput calculations it becomes exceedingly imp… ▽ More First principles approaches have revolutionized our ability in using computers to predict, explore and design materials. A major advantage commonly associated with these approaches is that they are fully parameter free. However, numerically solving the underlying equations requires to choose a set of convergence parameters. With the advent of high-throughput calculations it becomes exceedingly important to achieve a truly parameter free approach. Utilizing uncertainty quantification (UQ) and tensor decomposition we derive a numerically highly efficient representation of the statistical and systematic error in the multidimensional space of the convergence parameters. Based on this formalism we implement a fully automated approach that requires as input the target accuracy rather than convergence parameters. The performance and robustness of the approach are shown by applying it to a large set of elements crystallizing in a cubic fcc lattice. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Resolving the degree of order in the bacterial chromosome using a statistical physics approach

Authors: Joris J. B. Messelink, Jacqueline Janssen, Muriel C. F. van Teeseling, Martin Thanbichler, Chase P. Broedersz

Abstract: While bacterial chromosomes were long thought to be amorphous, recent experiments reveal pronounced organizational features. However, the extent of bacterial chromosome organization remains unclear. Here, we develop a fully data-driven maximum entropy approach to extract the distribution of single-cell chromosome conformations from experimental normalized Hi-C data. We apply this inference to the… ▽ More While bacterial chromosomes were long thought to be amorphous, recent experiments reveal pronounced organizational features. However, the extent of bacterial chromosome organization remains unclear. Here, we develop a fully data-driven maximum entropy approach to extract the distribution of single-cell chromosome conformations from experimental normalized Hi-C data. We apply this inference to the model organism Caulobacter crescentus. On small genomic scales of 104-105 basepairs, our model reveals a pattern of local chromosome extensions that correlates with transcriptional and DNA loop extrusion activity. On larger genomic scales, we find that chromosome structure is predominantly present along the long cell axis: chromosomal loci not only have well-defined axial positions, they also exhibit long-ranged correlations due interacting large emergent genomic clusters, termed Super Domains. Finally, our model reveals information contained in chromosome structure that can guide cellular processes. Our approach can be generalized to other species, providing a principled way of analyzing spatial chromosome organization. △ Less

Submitted 10 February, 2020; originally announced February 2020.

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Authors: P. Zellekens, N. Demarina, J. Janßen, T. Rieger, M. I. Lepsa, P. Perla, G. Panaitov, H. Lüth, D. Grützmacher, T. Schäpers

Abstract: Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--… ▽ More Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an ambipolar behavior comprising an insulating range in between the transition from the p-type to the n-type region. Simulations based on a self-consistent Schrödinger--Poisson solver revealed that the ambipolar characteristics originate from a Fermi level dependent occupation of hole and electron states within the approximately circular quantum well formed in the InSb shell. By applying a perpendicular magnetic field with respect to the nanowire axis, conductance fluctuations were observed, which are used to extract the phase-coherence length. By averaging the magneto-conductance traces at different back-gate voltages, weak antilocalization features are resolved. Regular flux-periodic conductance oscillations are measured when an axial magnetic field is applied. These oscillations are attributed to closed-loop quantized states located in the InSb shell which shift their energetic position periodically with the magnetic flux. Possible reasons for experimentally observed variations in the oscillation patterns are discussed using simulation results. △ Less

Submitted 2 April, 2020; v1 submitted 13 November, 2019; originally announced November 2019.

Comments: 19 pages, 9 figures, 1 table, title changed, additional datasets and plots

Journal ref: Semicond. Sci. Technol. (2020)

Rectification in mesoscopic AC-gated semiconductor devices

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum… ▽ More We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 7 pages, 5 figures

Journal ref: Journal of Applied Physics vol. 114, 164505 (2013)

Error detection in a tunable-barrier electron pump

Authors: S. P. Giblin, P. See, J. D. Fletcher, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, M. Kataoka

Abstract: We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation… ▽ More We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures. This is an unpublished study preceding the work published as "High-resolution error detection in the capture process of a single-electron pump", Applied Physics Letters vol. 108, 023502 (2016)

High-resolution error detection in the capture process of a single-electron pump

Authors: S. P. Giblin, P. See, A. Petrie, T. J. B. M. Janssen, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie, M. Kataoka

Abstract: The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre… ▽ More The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures

Journal ref: Applied Physics Letters vol. 108, 023502 (2016)

LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Authors: N. Johnson, C. Emary, S. Ryu, H. -S. Sim, P. See, J. D. Fletcher, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen, M. Kataoka

Abstract: Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw… ▽ More Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications. △ Less

Submitted 25 December, 2017; originally announced December 2017.

Comments: 5 pages and supplementary

Journal ref: Phys. Rev. Lett. 121, 137703 (2018)

Precise effective masses from density functional perturbation theory

Authors: Jonathan Laflamme Janssen, Yannick Gillet, Samuel Poncé, Alexandre Martin, Marc Torrent, Xavier Gonze

Abstract: The knowledge of effective masses is a key ingredient to analyze numerous properties of semiconductors, like carrier mobilities, (magneto-)transport properties, or band extrema characteristics yielding carrier densities and density of states. Currently, these masses are usually calculated using finite-difference estimation of density functional theory (DFT) electronic band curvatures. However, fin… ▽ More The knowledge of effective masses is a key ingredient to analyze numerous properties of semiconductors, like carrier mobilities, (magneto-)transport properties, or band extrema characteristics yielding carrier densities and density of states. Currently, these masses are usually calculated using finite-difference estimation of density functional theory (DFT) electronic band curvatures. However, finite differences require an additional convergence study and are prone to numerical noise. Moreover, the concept of effective mass breaks down at degenerate band extrema. We assess the former limitation by developing a method that allows to obtain the Hessian of DFT bands directly, using density functional perturbation theory (DFPT). Then, we solve the latter issue by adapting the concept of `transport equivalent effective mass' to the $\vec{k} \cdot \hat{\vec{p}}$ framework. The numerical noise inherent to finite-difference methods is thus eliminated, along with the associated convergence study. The resulting method is therefore more general, more robust and simpler to use, which makes it especially appropriate for high-throughput computing. After validating the developed techniques, we apply them to the study of silicon, graphane, and arsenic. The formalism is implemented into the ABINIT software and supports the norm-conserving pseudopotential approach, the projector augmented-wave method, and the inclusion of spin-orbit coupling. The derived expressions also apply to the ultrasoft pseudopotential method. △ Less

Submitted 19 August, 2017; originally announced August 2017.

Comments: 22 pages, 6 figures

Journal ref: Phys. Rev. B 93, 205147 (2016)

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Authors: Cassandra Chua, Arseniy Lartsev, Jinggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Malcolm R. Connolly

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphen… ▽ More We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Ultrafast Voltage Sampling using Single-Electron Wavepackets

Authors: N. Johnson, J. D. Fletcher, D. A. Humphreys, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M Janssen, M. Kataoka

Abstract: We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w… ▽ More We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond. △ Less

Submitted 14 October, 2016; v1 submitted 3 October, 2016; originally announced October 2016.

Comments: 9 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 102105 (2017)

Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States

Authors: M. Kataoka, N. Johnson, C. Emary, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen

Abstract: We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival ti… ▽ More We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 116, 126803 (2016)

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Authors: T. J. B. M. Janssen, S. Rozhko, I. Antonov, A. Tzalenchuk, J. M. Williams, Z. Melhem, H. He, S. Lara-Avila, S. Kubatkin, R. Yakimova

Abstract: We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant a… ▽ More We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: 15 pages, 9 figures

Journal ref: 2D Materials 2 (2015) 035015

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

Authors: J. Huang, J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, R. Yakimova, R. J. Nicholas

Abstract: We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder… ▽ More We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 92, 075407 (2015)

Temperature dependence of the electronic structure of semiconductors and insulators

Authors: Samuel Poncé, Yannick Gillet, Jonathan Laflamme Janssen, Andrea Marini, Matthieu Verstraete, Xavier Gonze

Abstract: The renormalization of electronic eigenenergies due to electron-phonon coupling is sizable in many materials with light atoms. This effect, often neglected in ab-initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the numerous recent progresses in this field, and a brief… ▽ More The renormalization of electronic eigenenergies due to electron-phonon coupling is sizable in many materials with light atoms. This effect, often neglected in ab-initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the numerous recent progresses in this field, and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a q-point sampling inside the BZ. For q-points close to G, we show that a divergence due to non-zero Born effective charge appears in the electron-phonon matrix elements, leading to a divergence of the integral over the BZ for band extrema. Although it should vanish for non-polar materials, unphysical residual Born effective charges are usually present in ab-initio calculations. Here, we propose a solution that improves the coupled q-point convergence dramatically. For polar materials, the problem is more severe: the divergence of the integral does not disappear in the adiabatic harmonic approximation, but only in the non-adiabatic harmonic approximation. In all cases, we study in detail the convergence behavior of the renormalization as the q-point sampling goes to infinity and the imaginary broadening parameter goes to zero. This allows extrapolation, thus enabling a systematic way to converge the renormalization for both polar and non-polar materials. Finally, the adiabatic and non-adiabatic theory, with corrections for the divergence problem, are applied to the study of five semiconductors and insulators: a-AlN, b-AlN, BN, diamond and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening and the renormalized electronic bandstructure. △ Less

Submitted 22 April, 2015; originally announced April 2015.

Comments: 27 pages and 26 figures

Measurement and control of electron wave packets from a single-electron source

Authors: J. Waldie, P. See, V. Kashcheyevs, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie, T. J. B. M. Janssen, M. Kataoka

Abstract: We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine… ▽ More We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons. △ Less

Submitted 22 July, 2015; v1 submitted 24 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 125305 (2015)

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

Authors: J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen, A. Tzalenchuk, T. Yager, S. Lara-Avila, S. Kubatkin, R. L. Myers-Ward, V. D. Wheeler, D. K. Gaskill, R. J. Nicholas

Abstract: Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction… ▽ More Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 9 pages, 8 figures

Journal ref: J. Phys.: Condens. Matter 27 164202 (2015)

Performance of Hybrid NbTiN-Al Microwave Kinetic Inductance Detectors as Direct Detectors for Sub-millimeter Astronomy

Authors: R. M. J. Janssen, J. J. A. Baselmans, A. Endo, L. Ferrari, S. J. C. Yates, A. M. Baryshev, T. M. Klapwijk

Abstract: In the next decades millimeter and sub-mm astronomy requires large format imaging arrays and broad-band spectrometers to complement the high spatial and spectral resolution of the Atacama Large Millimeter/sub-millimeter Array. The desired sensors for these instruments should have a background limited sensitivity and a high optical efficiency and enable arrays thousands of pixels in size. Hybrid mi… ▽ More In the next decades millimeter and sub-mm astronomy requires large format imaging arrays and broad-band spectrometers to complement the high spatial and spectral resolution of the Atacama Large Millimeter/sub-millimeter Array. The desired sensors for these instruments should have a background limited sensitivity and a high optical efficiency and enable arrays thousands of pixels in size. Hybrid microwave kinetic inductance detectors consisting of NbTiN and Al have shown to satisfy these requirements. We present the second generation hybrid NbTiN-Al MKIDs, which are photon noise limited in both phase and amplitude readout for loading levels $P_{850GHz} \geq 10$ fW. Thanks to the increased responsivity, the photon noise level achieved in phase allows us to simultaneously read out approximately 8000 pixels using state-of-the-art electronics. In addition, the choice of superconducting materials and the use of a Si lens in combination with a planar antenna gives these resonators the flexibility to operate within the frequency range $0.09 < ν< 1.1$ THz. Given these specifications, hybrid NbTiN-Al MKIDs will enable astronomically usable kilopixel arrays for sub-mm imaging and moderate resolution spectroscopy. △ Less

Submitted 14 August, 2014; originally announced August 2014.

Comments: 7 pages, 3 figures. Presented at SPIE Astronomical Telescopes and Instrumentation 2014: Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy VII

Journal ref: Proc. SPIE 9153, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy VII, 91530T (July 23, 2014)

Equivalence of Optical and Electrical Noise Equivalent Power of Hybrid NbTiN-Al Microwave Kinetic Inductance Detectors

Authors: R. M. J. Janssen, A. Endo, P. J. de Visser, T. M. Klapwijk, J. J. A. Baselmans

Abstract: We have measured and compared the response of hybrid NbTiN-Al Microwave Kinetic Inductance Detectors (MKIDs) to changes in bath temperature and illumination by sub-mm radiation. We show that these two stimulants have an equivalent effect on the resonance feature of hybrid MKIDs. We determine an electrical NEP from the measured temperature responsivity, quasiparticle recombination time, superconduc… ▽ More We have measured and compared the response of hybrid NbTiN-Al Microwave Kinetic Inductance Detectors (MKIDs) to changes in bath temperature and illumination by sub-mm radiation. We show that these two stimulants have an equivalent effect on the resonance feature of hybrid MKIDs. We determine an electrical NEP from the measured temperature responsivity, quasiparticle recombination time, superconducting transition temperature and noise spectrum, all of which can be measured in a dark environment. For the two hybrid NbTiN-Al MKIDs studied in detail the electrical NEP is within a factor of two of the optical NEP, which is measured directly using a blackbody source. △ Less

Submitted 17 November, 2014; v1 submitted 14 August, 2014; originally announced August 2014.

Comments: 5 pages, 3 figures

Journal ref: Applied Physics Letters 105, 193504 (2014)

Efficient dielectric matrix calculations using the Lanczos algorithm for fast many-body $G_0W_0$ implementations

Authors: Jonathan Laflamme Janssen, Bruno Rousseau, Michel Côté

Abstract: We present a $G_0W_0$ implementation that assesses the two major bottlenecks of traditional plane-waves implementations, the summations over conduction states and the inversion of the dielectric matrix, without introducing new approximations in the formalism. The first bottleneck is circumvented by converting the summations into Sternheimer equations. Then, the novel avenue of expressing the diele… ▽ More We present a $G_0W_0$ implementation that assesses the two major bottlenecks of traditional plane-waves implementations, the summations over conduction states and the inversion of the dielectric matrix, without introducing new approximations in the formalism. The first bottleneck is circumvented by converting the summations into Sternheimer equations. Then, the novel avenue of expressing the dielectric matrix in a Lanczos basis is developed, which reduces the matrix size by orders of magnitude while being computationally efficient. We also develop a model dielectric operator that allows us to further reduce the size of the dielectric matrix without accuracy loss. Furthermore, we develop a scheme that reduces the numerical cost of the contour deformation technique to the level of the lightest plasmon pole model. Finally, the use of the simplified quasi-minimal residual scheme in replacement of the conjugate gradients algorithm allows a direct evaluation of the $G_0W_0$ corrections at the desired real frequencies, without need for analytical continuation. The performance of the resulting $G_0W_0$ implementation is demonstrated by comparison with a traditional plane-waves implementation, which reveals a 500-fold speedup for the silane molecule. Finally, the accuracy of our $G_0W_0$ implementation is demonstrated by comparison with other $G_0W_0$ calculations and experimental results. △ Less

Submitted 20 March, 2015; v1 submitted 13 August, 2014; originally announced August 2014.

Comments: 19 pages, 2 figures

Journal ref: Physical Review B 91 (2015) 125120

The temperature dependence of electronic eigenenergies in the adiabatic harmonic approximation

Authors: Samuel Poncé, Gabriel Antonius, Yannick Gillet, Paul Boulanger, Jonathan Laflamme Janssen, Andrea Marini, Michel Côté, Xavier Gonze

Abstract: The renormalization of electronic eigenenergies due to electron-phonon interactions (temperature dependence and zero-point motion effect) is important in many materials. We address it in the adiabatic harmonic approximation, based on first principles (e.g. Density-Functional Theory), from different points of view: directly from atomic position fluctuations or, alternatively, from Janak's theorem g… ▽ More The renormalization of electronic eigenenergies due to electron-phonon interactions (temperature dependence and zero-point motion effect) is important in many materials. We address it in the adiabatic harmonic approximation, based on first principles (e.g. Density-Functional Theory), from different points of view: directly from atomic position fluctuations or, alternatively, from Janak's theorem generalized to the case where the Helmholtz free energy, including the vibrational entropy, is used. We prove their equivalence, based on the usual form of Janak's theorem and on the dynamical equation. We then also place the Allen-Heine-Cardona (AHC) theory of the renormalization in a first-principle context. The AHC theory relies on the rigid-ion approximation, and naturally leads to a self-energy (Fan) contribution and a Debye-Waller contribution. Such a splitting can also be done for the complete harmonic adiabatic expression, in which the rigid-ion approximation is not required. A numerical study within the Density-Functional Perturbation theory framework allows us to compare the AHC theory with frozen-phonon calculations, with or without the rigid-ion terms. For the two different numerical approaches without rigid-ion terms, the agreement is better than 7 $μ$eV in the case of diamond, which represent an agreement to 5 significant digits. The magnitude of the non rigid-ion terms in this case is also presented, distinguishing specific phonon modes contributions to different electronic eigenenergies. △ Less

Submitted 12 August, 2014; originally announced August 2014.

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Authors: C. J. Chua, M. R. Connolly, A. Lartsev, T. Yager, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko, R. Yakimova, R. Pearce, T. J. B. M. Janssen, A. Ya. Tzalenchuk, C. G. Smith

Abstract: We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons… ▽ More We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe. △ Less

Submitted 27 October, 2014; v1 submitted 22 May, 2014; originally announced May 2014.

Comments: 5 pages, 5 figures

Journal ref: Nano Letters, 2014, 14 (6), pp 3369-3373

High optical efficiency and photon noise limited sensitivity of microwave kinetic inductance detectors using phase readout

Authors: R. M. J. Janssen, J. J. A. Baselmans, A. Endo, L. Ferrari, S. J. C. Yates, A. M. Baryshev, T. M. Klapwijk

Abstract: We demonstrate photon noise limited performance in both phase and amplitude readout in microwave kinetic inductance detectors (MKIDs) consisting of NbTiN and Al, down to 100 fW of optical power. We simulate the far field beam pattern of the lens-antenna system used to couple radiation into the MKID and derive an aperture efficiency of 75%. This is close to the theoretical maximum of 80% for a sing… ▽ More We demonstrate photon noise limited performance in both phase and amplitude readout in microwave kinetic inductance detectors (MKIDs) consisting of NbTiN and Al, down to 100 fW of optical power. We simulate the far field beam pattern of the lens-antenna system used to couple radiation into the MKID and derive an aperture efficiency of 75%. This is close to the theoretical maximum of 80% for a single-moded detector. The beam patterns are verified by a detailed analysis of the optical coupling within our measurement setup. △ Less

Submitted 11 November, 2013; originally announced November 2013.

Comments: 5 pages, 4 figures

Journal ref: Applied Physics Letters 103, 203503 (2013)

Weak localization scattering lengths in epitaxial, and CVD graphene

Authors: A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T. Lin, L. -J. Li, R. J. Nicholas

Abstract: Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L… ▽ More Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity. △ Less

Submitted 10 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B86 235441 (2012)

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

Authors: J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, B. A. Piot, D. K. Maude, R. J. Nicholas

Abstract: We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)… ▽ More We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Quantum resistance metrology using graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphe… ▽ More In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology. △ Less

Submitted 18 July, 2013; v1 submitted 15 March, 2013; originally announced March 2013.

Comments: arXiv admin note: substantial text overlap with arXiv:1202.2985

Journal ref: Progress in Physics 76, 104501 (2013)

Clock-controlled emission of single-electron wavepackets in a solid-state circuit

Authors: J. D. Fletcher, M. Kataoka, H. Howe, M. Pepper, P. See, S. P. Giblin, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, T. J. B. M. Janssen

Abstract: We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon… ▽ More We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths. △ Less

Submitted 20 February, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. Lett. 111, 216807 (2013)

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

Authors: A. M. R. Baker J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T Lin, L. -J Li, R. J. Nicholas

Abstract: Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi… ▽ More Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples. △ Less

Submitted 19 December, 2012; originally announced December 2012.

Comments: 8 figs PRB in press

Bromophenyl functionalization of carbon nanotubes : an ab initio study

Authors: Jason Beaudin, Jonathan Laflamme Janssen, Nicholas D. M. Hine, Peter D. Haynes, Michel Côté

Abstract: We study the thermodynamics of bromophenyl functionalization of carbon nanotubes with respect to diameter and metallic/insulating character using density-functional theory (DFT). On one hand, we show that the activation energy for the grafting of a bromophenyl molecule onto a semiconducting zigzag nanotube ranges from 0.73 eV to 0.76 eV without any clear trend with respect to diameter within numer… ▽ More We study the thermodynamics of bromophenyl functionalization of carbon nanotubes with respect to diameter and metallic/insulating character using density-functional theory (DFT). On one hand, we show that the activation energy for the grafting of a bromophenyl molecule onto a semiconducting zigzag nanotube ranges from 0.73 eV to 0.76 eV without any clear trend with respect to diameter within numerical accuracy. On the other hand, the binding energy of a single bromophenyl molecule shows a clear diameter dependence and ranges from 1.51 eV for a (8,0) zigzag nanotube to 0.83 eV for a (20,0) zigzag nanotube. This is in part explained by the transition from sp2 to sp3 bonding occurring to a carbon atom of a nanotube when a phenyl is grafted to it and the fact that smaller nanotubes are closer to a sp3 hybridization than larger ones due to increased curvature. Since a second bromophenyl unit can attach without energy barrier next to an isolated grafted unit, they are assumed to exist in pairs. The para configuration is found to be favored for the pairs and their binding energy decreases with increasing diameter, ranging from 4.34 eV for a (7,0) nanotube to 2.27 eV for a (29,0) nanotube. An analytic form for this radius dependence is derived using a tight binding hamiltonian and first order perturbation theory. The 1/R^2 dependance obtained (where R is the nanotube radius) is verified by our DFT results within numerical accuracy. Finally, metallic nanotubes are found to be more reactive than semiconducting nanotubes, a feature that can be explained by a non-zero density of states at the Fermi level for metallic nanotubes. △ Less

Submitted 3 October, 2012; originally announced October 2012.

Comments: 7 pages, 5 figures and 3 tables

Gigahertz quantized charge pumping in graphene quantum dots

Authors: M. R. Connolly, K. L. Chiu, S. P. Giblin, M. Kataoka, J. D. Fletcher, C. Chua, J. P. Griffiths, G. A. C. Jones, V. I. Fal'ko, C. G. Smith, T. J. B. M. Janssen

Abstract: Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1… ▽ More Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Comments: 13 pages, 11 figures, includes supplementary information

Journal ref: Nature Nanotechnology (2013)

Power Handling and Responsivity of Submicron Wide Superconducting Coplanar Waveguide Resonators

Authors: R. M. J. Janssen, A. Endo, J. J. A. Baselmans, P. J. de Visser, R. Barends, T. M. Klapwijk

Abstract: The sensitivity of microwave kinetic inductance detectors (MKIDs) based on coplanar waveguides (CPWs) needs to be improved by at least an order of magnitude to satisfy the requirements for space-based terahertz astronomy. Our aim is to investigate if this can be achieved by reducing the width of the CPW to much below what has typically been made using optical lithography (> 1 μm). CPW resonators w… ▽ More The sensitivity of microwave kinetic inductance detectors (MKIDs) based on coplanar waveguides (CPWs) needs to be improved by at least an order of magnitude to satisfy the requirements for space-based terahertz astronomy. Our aim is to investigate if this can be achieved by reducing the width of the CPW to much below what has typically been made using optical lithography (> 1 μm). CPW resonators with a central line width as narrow as 300 nm were made in NbTiN using electron beam lithography and reactive ion etching. In a systematic study of quarter-wave CPW resonators with varying widths it is shown that the behavior of responsivity, noise and power handling as a function of width continues down to 300 nm. This encourages the development of narrow KIDs using Al in order to improve their sensitivity. △ Less

Submitted 4 June, 2012; originally announced June 2012.

Comments: 6 pages, 3 figures

Journal ref: J. Low Temp. Phys. 167, 354-359 (2012)

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Authors: T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher, R. Goebel, A. Tzalenchuk, R. Yakimova, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation… ▽ More The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Journal ref: Metrologia 49 (2012) 294-306

Towards a quantum representation of the ampere using single electron pumps

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design… ▽ More Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge. △ Less

Submitted 10 July, 2012; v1 submitted 12 January, 2012; originally announced January 2012.

Comments: 8 pages, 7 figures

Journal ref: Nat. Commun. 3:930 (2012)

Spatial modeling of the 3D morphology of hybrid polymer-ZnO solar cells, based on electron tomography data

Authors: O. Stenzel, V. Schmidt, H. Hassfeld, R. Thiedmann, L. J. A. Koster, S. D. Oosterhout, S. S. van Bavel, M. M. Wienk, J. Loos, R. A. J. Janssen

Abstract: A spatial stochastic model is developed which describes the 3D nanomorphology of composite materials, being blends of two different (organic and inorganic) solid phases. Such materials are used, for example, in photoactive layers of hybrid polymer zinc oxide solar cells. The model is based on ideas from stochastic geometry and spatial statistics. Its parameters are fitted to image data gained by e… ▽ More A spatial stochastic model is developed which describes the 3D nanomorphology of composite materials, being blends of two different (organic and inorganic) solid phases. Such materials are used, for example, in photoactive layers of hybrid polymer zinc oxide solar cells. The model is based on ideas from stochastic geometry and spatial statistics. Its parameters are fitted to image data gained by electron tomography (ET), where adaptive thresholding and stochastic segmentation have been used to represent morphological features of the considered ET data by unions of overlapping spheres. Their midpoints are modeled by a stack of 2D point processes with a suitably chosen correlation structure, whereas a moving-average procedure is used to add the radii of spheres. The model is validated by comparing physically relevant characteristics of real and simulated data, like the efficiency of exciton quenching, which is important for the generation of charges and their transport toward the electrodes. △ Less

Submitted 22 November, 2011; originally announced November 2011.

Comments: Published in at http://dx.doi.org/10.1214/11-AOAS468 the Annals of Applied Statistics (http://www.imstat.org/aoas/) by the Institute of Mathematical Statistics (http://www.imstat.org)

Report number: IMS-AOAS-AOAS468

Journal ref: Annals of Applied Statistics 2011, Vol. 5, No. 3, 1920-1947

Electron-phonon coupling in the C60 fullerene within the many-body GW approach

Authors: Carina Faber, Jonathan Laflamme Janssen, Michel Côté, E. Runge, X. Blase

Abstract: We study the electron-phonon coupling in the C60 fullerene within the first-principles GW approach, focusing on the lowest unoccupied t1u three-fold electronic state which is relevant for the superconducting transition in electron doped fullerides. It is shown that the strength of the coupling is significantly enhanced as compared to standard density functional theory calculations with (semi)local… ▽ More We study the electron-phonon coupling in the C60 fullerene within the first-principles GW approach, focusing on the lowest unoccupied t1u three-fold electronic state which is relevant for the superconducting transition in electron doped fullerides. It is shown that the strength of the coupling is significantly enhanced as compared to standard density functional theory calculations with (semi)local functionals, with a 48% increase of the electron-phonon potential Vep. The calculated GW value for the contribution from the Hg modes of 93 meV comes within 4% of the most recent experimental values. The present results call for a reinvestigation of previous density functional based calculations of electron-phonon coupling in covalent systems in general. △ Less

Submitted 4 October, 2011; v1 submitted 5 September, 2011; originally announced September 2011.

Comments: 4 pages, 0 figure

Stabilization of single-electron pumps by high magnetic fields

Authors: J. D. Fletcher, M. Kataoka, S. P. Giblin, Sunghun Park, H. -S. Sim, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, H. E. Beere, D. A. Ritchie

Abstract: We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati… ▽ More We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization. △ Less

Submitted 31 August, 2012; v1 submitted 22 July, 2011; originally announced July 2011.

Integrated Filterbank for DESHIMA: A Submillimeter Imaging Spectrograph Based on Superconducting Resonators

Authors: A. Endo, P. van der Werf, R. M. J. Janssen, P. J. de Visser, T. M. Klapwijk, J. J. A. Baselmans, L. Ferrari, A. M. Baryshev, S. J. C. Yates

Abstract: An integrated filterbank (IFB) in combination with microwave kinetic inductance detectors (MKIDs), both based on superconducting resonators, could be used to make broadband submillimeter imaging spectrographs that are compact and flexible. In order to investigate the possibility of adopting an IFB configuration for DESHIMA (Delft SRON High-redshift Mapper), we study the basic properties of a copla… ▽ More An integrated filterbank (IFB) in combination with microwave kinetic inductance detectors (MKIDs), both based on superconducting resonators, could be used to make broadband submillimeter imaging spectrographs that are compact and flexible. In order to investigate the possibility of adopting an IFB configuration for DESHIMA (Delft SRON High-redshift Mapper), we study the basic properties of a coplanar-waveguide-based IFB using electromagnetic simulation. We show that a coupling efficiency greater than 1/2 can be achieved if transmission losses are negligible. We arrive at a practical design for a 9 pixel x 920 color 3 dimensional imaging device that fits on a 4 inch wafer, which instantaneously covers multiple submillimeter telluric windows with a dispersion of f/df = 1000. △ Less

Submitted 17 July, 2011; originally announced July 2011.

Comments: 6 pages, 4 figures, submitted to LTD-14 / Journal of Low Temperature Physics

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Authors: T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, V. I. Falko

Abstract: The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial… ▽ More The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. △ Less

Submitted 15 September, 2011; v1 submitted 20 May, 2011; originally announced May 2011.

Journal ref: New Journal of Physics, 13 (2011) 093026

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, V. Fal'ko

Abstract: We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. O… ▽ More We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements. △ Less

Submitted 17 May, 2011; v1 submitted 17 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. B 83, 233402 (2011)

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Authors: S. J. Wright, A. L. Thorn, M. D. Blumenthal, S. P. Giblin, M. Pepper, T. J. B. M. Janssen, M. Kataoka, J. D. Fletcher, G. A. C. Jones, C. A. Nicoll, Godfrey Gumbs, D. A. Ritchie

Abstract: We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local diso… ▽ More We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 5 pages, 4 figures, submitted to J. Appl. Phys. as an invited paper for ICPS-30, 25th-30th July, Seoul, SK

Journal ref: J. Appl. Phys. 109, 102422 (2011)

Accurate high speed single-electron quantum dot preparation

Authors: S. P. Giblin, S. J. Wright, J. Fletcher, M. Kataoka, M. Pepper, T. J. B. M. Janssen, D. A. Ritchie, C. A. Nicoll, D. Anderson, G. A. C. Jones

Abstract: Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, tho… ▽ More Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle. △ Less

Submitted 5 May, 2010; v1 submitted 30 March, 2010; originally announced March 2010.

Comments: 12 pages, 3 figures

Journal ref: New J.Phys.12:073013,2010

Quantum Resistance Standard Based on Epitaxial Graphene

Authors: Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Olga Kazakova, T. J. B. M. Janssen, Vladimir Fal'ko, Sergey Kubatkin

Abstract: We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis… ▽ More We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted

Journal ref: Nature Nanotechnology 5, 186 - 189 (2010)

Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field

Authors: S. J. Wright, M. D. Blumenthal, Godfrey Gumbs, A. L. Thorn, M. Pepper, T. J. B. M. Janssen, S. N. Holmes, D. Anderson, G. A. C. Jones, C. A. Nicoll, D. A. Ritchie

Abstract: We present experimental results of high frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plat… ▽ More We present experimental results of high frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field. △ Less

Submitted 27 November, 2008; v1 submitted 4 November, 2008; originally announced November 2008.

Comments: 4 pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233311 (2008)