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Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
Authors:
I. Fattal,
J. Van Damme,
B. Raes,
C. Godfrin,
G. Jaliel,
K. Chen,
T. Van Caekenberghe,
A. Loenders,
S. Kubicek,
S. Massar,
Y. Canvel,
J. Jussot,
Y. Shimura,
R. Loo,
D. Wan,
M. Mongillo,
K. De Greve
Abstract:
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolit…
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Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.
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Submitted 7 April, 2025;
originally announced April 2025.
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Identifying Many-Body Localization in Realistic Dot Arrays
Authors:
Alexander Nico-Katz,
Gulzat Jaliel,
Paola Atkinson,
Thomas A. Mitchell,
David A. Ritchie,
Charles G. Smith,
Sougato Bose
Abstract:
We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our exper…
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We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our experimental system, we find that many-body localization can potentially be detected in current-generation quantum dot arrays. A pitfall that we identify is that the freezing of a system due to strong interactions yields signatures similar to conventional localization. We find that the most widely-used experimental signature of localization - the imbalance - is not sensitive to this fact, and may be unsuitable as the lone identifier of the many-body localized regime.
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Submitted 19 January, 2023;
originally announced January 2023.
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Experimental realization of a quantum dot energy harvester
Authors:
G. Jaliel,
R. K. Puddy,
R. Sánchez,
A. N. Jordan,
B. Sothmann,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
C. G. Smith
Abstract:
We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons…
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We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK.
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Submitted 1 October, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
