Showing 1–2 of 2 results for author: Jahma, M O
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Multiscale modeling of submonolayer growth for Fe/Mo(110)
Authors:
M. Mašín,
M. Kotrla,
B. Yang,
M. Asta,
M. O. Jahma,
T. Ala-Nissila
Abstract:
We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles calculations of the monomer diffusion barrier and adatom-adatom interactions. The model is investigated by equilibrium Monte Carlo (MC) simulations to compute the…
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We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles calculations of the monomer diffusion barrier and adatom-adatom interactions. The model is investigated by equilibrium Monte Carlo (MC) simulations to compute the diffusion coefficients of Fe islands of different sizes. These quantities are then used as input to the coarse-grained Kinetic Rate Equation (KRE) approach, which provides time evolution of the island size distributions for a system undergoing diffusion driven aggregation within the 2D submonolayer regime. We calculate these distributions at temperatures T=500 K and 1000 K using the KRE method. We also employ direct kinetic MC simulations of our model to study island growth at T=500 K, and find good agreement with the KRE results, which validates our multi-scale approach.
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Submitted 18 December, 2012;
originally announced December 2012.
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Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)
Authors:
M. O. Jahma,
M. Rusanen,
A. Karim,
I. T. Koponen,
T. Ala-Nissila,
T. S. Rahman
Abstract:
We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surfa…
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We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surfaces. We demonstrate that the generic features of growth remain unaffected by the details of island diffusion, thus validating the generic scenario of high density of small islands found experimentally and theoretically for large detachment rates. However, the details of the morphological transition and scaling of the mean island size are strongly influenced by the size dependence of island diffusion. This is reflected in the scaling exponent of the mean island size, which depends on both temperature and the surface geometry.
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Submitted 18 July, 2005;
originally announced July 2005.
