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Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
Authors:
Steve M. Young,
Mitchell Brickson,
Jason R. Petta,
N. Tobias Jacobson
Abstract:
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and conse…
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In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode significantly reduces the amount of power required to drive spin rotations. However, the susceptibility of flopping-mode spin qubits to charge noise, and consequently their overall performance, has not been examined in detail. In this work, we simulate single-qubit gate fidelities of electrically driven spin rotations in an ensemble of devices configured to operate in both the single-dot and flopping-mode regimes. Our model accounts for the valley physics of conduction band electrons in silicon and realistic alloy disorder in the SiGe barrier layers, allowing us to investigate device-to-device variability. We include charge and magnetic noise, as well as spin relaxation processes arising from charge noise and electron-phonon coupling. We find that the two operating modes exhibit significantly different susceptibilities to the various noise sources, with valley splitting and spin relaxation times also playing a role in their relative performance. For realistic noise strengths, we find that single-dot gate fidelities are limited by magnetic noise while flopping-mode fidelities are primarily limited by charge noise and spin relaxation. For sufficiently long spin relaxation times, flopping-mode spin operation is feasible with orders-of-magnitude lower drive power and gate fidelities that are on par with conventional single-dot electric dipole spin resonance.
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Submitted 13 March, 2025;
originally announced March 2025.
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Model validation and error attribution for a drifting qubit
Authors:
Malick A. Gaye,
Dylan Albrecht,
Steve Young,
Tameem Albash,
N. Tobias Jacobson
Abstract:
Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how…
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Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long time-scales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. In this work, we demonstrate how we can use the distribution of these values to validate or invalidate candidate noise models. We focus on the case of randomized benchmarking (RB), where typically a single error rate is reported but this error rate can drift over time when multiple passes of RB are performed. We show that using a statistical test as simple as the Kolmogorov-Smirnov statistic on the distribution of RB error rates can be used to rule out noise models, assuming the experiment is performed over a long enough time interval to capture relevant low frequency noise. With confidence in a noise model, we show how care must be exercised when performing error attribution using the distribution of drifting RB error rate.
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Submitted 12 March, 2025; v1 submitted 27 November, 2024;
originally announced November 2024.
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Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot
Authors:
Mitchell Brickson,
N. Tobias Jacobson,
Andrew J. Miller,
Leon N. Maurer,
Tzu-Ming Lu,
Dwight R. Luhman,
Andrew D. Baczewski
Abstract:
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions have a strong influence on calculations of the effective $g$ factor of a lithographic quantum dot in a Ge/SiGe heterostructure. Comparing predictions from a model…
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The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions have a strong influence on calculations of the effective $g$ factor of a lithographic quantum dot in a Ge/SiGe heterostructure. Comparing predictions from a model including these effects to raw magnetospectroscopy data, we apply maximum-likelihood estimation to infer the shape of a quantum dot with up to four holes. We expect that methods like this will be useful in assessing qubit-to-qubit variability critical to further scaling quantum computing technologies based on spins in semiconductors.
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Submitted 26 August, 2024;
originally announced August 2024.
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Characterization of individual charge fluctuators in Si/SiGe quantum dots
Authors:
Feiyang Ye,
Ammar Ellaboudy,
Dylan Albrecht,
Rohith Vudatha,
N. Tobias Jacobson,
John M. Nichol
Abstract:
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the f…
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Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurements and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.
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Submitted 12 December, 2024; v1 submitted 25 January, 2024;
originally announced January 2024.
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Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Authors:
Luis Fabián Peña,
Justine C. Koepke,
J. Houston Dycus,
Andrew Mounce,
Andrew D. Baczewski,
N. Tobias Jacobson,
Ezra Bussmann
Abstract:
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques…
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SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder.
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Submitted 27 June, 2023;
originally announced June 2023.
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Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits
Authors:
Steve M. Young,
N. Tobias Jacobson,
Jason R. Petta
Abstract:
Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of…
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Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit iSWAP gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show tradeoffs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin iSWAP. Importantly, we find that while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spin-like to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to charge-like qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.
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Submitted 23 August, 2022;
originally announced August 2022.
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A silicon singlet-triplet qubit driven by spin-valley coupling
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Martin Rudolph,
Daniel R. Ward,
Malcolm S. Carroll,
Dwight R. Luhman
Abstract:
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers…
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Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^α$ dependence consistent with $α\sim 0.7$, over 9 orders of magnitude in noise frequency.
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Submitted 11 November, 2021; v1 submitted 24 February, 2021;
originally announced February 2021.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
Authors:
Chung-Tao Chou,
Noah Tobias Jacobson,
Jonathan Edward Moussa,
Andrew David Baczewski,
Yen Chuang,
Chia-You Liu,
Jiun-Yun Li,
Tzu-Ming Lu
Abstract:
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crosso…
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Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than $\sim6\times 10^{11}$cm$^{-2}$, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.
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Submitted 3 July, 2018;
originally announced July 2018.
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All-electrical universal control of a double quantum dot qubit in silicon MOS
Authors:
Patrick Harvey-Collard,
Ryan M. Jock,
N. Tobias Jacobson,
Andrew D. Baczewski,
Andrew M. Mounce,
Matthew J. Curry,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea…
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Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.
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Submitted 6 February, 2018;
originally announced February 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
Authors:
M. Rudolph,
P. Harvey-Collard,
R. Jock,
N. T. Jacobson,
J. Wendt,
T. Pluym,
J. Dominguez,
G. Ten-Eyck,
R. Manginell,
M. P. Lilly,
M. S. Carroll
Abstract:
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact…
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Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
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Submitted 16 May, 2017;
originally announced May 2017.
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Spectroscopy of multi-electrode tunnel barriers
Authors:
A. Shirkhorshidian,
John King Gamble,
L. Maurer,
S. M. Carr,
J. Dominguez,
G. A. Ten Eyck,
J. R. Wendt,
E. Nielsen,
N. T. Jacobson,
M. P. Lilly,
M. S. Carroll
Abstract:
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-elec…
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Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-electrode tunnel barriers, suitable for design-rules-based engineering of tunnel junctions in quantum devices. We perform transport spectroscopy at $T=4$ K, extracting effective barrier heights and widths for a wide range of biases, using an efficient Landauer-Büttiker tunneling model to perform the analysis. We find that the barrier height shows several regimes of voltage dependence, either linear or approximately exponential. The exponential dependence approximately correlates with the formation of an electron channel below an electrode. Effects on transport threshold, such as metal-insulator-transition and lateral confinement are non-negligible and included. We compare these results to semi-classical solutions of Poisson's equation and find them to agree qualitatively. Finally, we characterize the sensitivity of a tunnel barrier that is raised or lowered without an electrode being directly above the barrier region.
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Submitted 4 May, 2017; v1 submitted 2 May, 2017;
originally announced May 2017.
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High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
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Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
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Valley splitting of single-electron Si MOS quantum dots
Authors:
John King Gamble,
Patrick Harvey-Collard,
N. Tobias Jacobson,
Andrew D. Baczewski,
Erik Nielsen,
Leon Maurer,
Inès Montaño,
Martin Rudolph,
M. S. Carroll,
C. H. Yang,
A. Rossi,
A. S. Dzurak,
Richard P. Muller
Abstract:
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem…
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Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform.
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Submitted 11 October, 2016;
originally announced October 2016.
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Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
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Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
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Multivalley effective mass theory simulation of donors in silicon
Authors:
John King Gamble,
N. Tobias Jacobson,
Erik Nielsen,
Andrew D. Baczewski,
Jonathan E. Moussa,
Inès Montaño,
Richard P. Muller
Abstract:
Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally…
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Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally solve the coupled six-valley Shindo-Nara equations, including silicon's full Bloch functions. Surprisingly, we find that including the full Bloch functions necessitates a tetrahedral, rather than spherical, donor central cell correction to accurately reproduce the experimental energy spectrum of a phosphorus impurity in silicon. We cross-validate this method against atomistic tight-binding calculations, showing that the two theories agree well for the calculation of donor-donor tunnel coupling. Further, we benchmark our results by performing a statistical uncertainty analysis, confirming that derived quantities such as the wave function profile and tunnel couplings are robust with respect to variational energy fluctuations. Finally, we apply this method to exhaustively enumerate the tunnel coupling for all donor-donor configurations within a large search volume, demonstrating conclusively that the tunnel coupling has no spatially stable regions. Though this instability is problematic for reliably coupling donor pairs for two-qubit operations, we identify specific target locations where donor qubits can be placed with scanning tunneling microscopy technology to achieve reliably large tunnel couplings.
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Submitted 2 November, 2015; v1 submitted 13 August, 2014;
originally announced August 2014.
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Exact infinite-time statistics of the Loschmidt echo for a quantum quench
Authors:
Lorenzo Campos Venuti,
N. Tobias Jacobson,
Siddhartha Santra,
Paolo Zanardi
Abstract:
The equilibration dynamics of a closed quantum system is encoded in the long-time distribution function of generic observables. In this paper we consider the Loschmidt echo generalized to finite temperature, and show that we can obtain an exact expression for its long-time distribution for a closed system described by a quantum XY chain following a sudden quench. In the thermodynamic limit the log…
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The equilibration dynamics of a closed quantum system is encoded in the long-time distribution function of generic observables. In this paper we consider the Loschmidt echo generalized to finite temperature, and show that we can obtain an exact expression for its long-time distribution for a closed system described by a quantum XY chain following a sudden quench. In the thermodynamic limit the logarithm of the Loschmidt echo becomes normally distributed, whereas for small quenches in the opposite, quasi-critical regime, the distribution function acquires a universal double-peaked form indicating poor equilibration. These findings, obtained by a central limit theorem-type result, extend to completely general models in the small-quench regime.
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Submitted 16 April, 2011;
originally announced April 2011.
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Fidelity approach to the disordered quantum XY model
Authors:
Silvano Garnerone,
N. Tobias Jacobson,
Stephan Haas,
Paolo Zanardi
Abstract:
We study the random XY spin chain in a transverse field by analyzing the susceptibility of the ground state fidelity, numerically evaluated through a standard mapping of the model onto quasi-free fermions. It is found that the fidelity susceptibility and its scaling properties provide useful information about the phase diagram. In particular it is possible to determine the Ising critical line an…
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We study the random XY spin chain in a transverse field by analyzing the susceptibility of the ground state fidelity, numerically evaluated through a standard mapping of the model onto quasi-free fermions. It is found that the fidelity susceptibility and its scaling properties provide useful information about the phase diagram. In particular it is possible to determine the Ising critical line and the Griffiths phase regions, in agreement with previous analytical and numerical results.
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Submitted 4 February, 2009; v1 submitted 29 August, 2008;
originally announced August 2008.
