Showing 1–50 of 118 results for author: Ivchenko, E L

Photocurrents induced by k-linear terms in semiconductors and semimetals

Authors: M. M. Glazov, E. L. Ivchenko

Abstract: We develop a six-band $\mathbf{k} \cdot \mathbf{p}$ model to describe the electronic structure and optical response of chiral multifold semimetals, such as RhSi. By means of invariants method we construct the effective Hamiltonian describing the states near the $Γ$-point of the Brillouin zone where the spin-orbit coupling and $\mathbf{k}$-linear Rashba terms, which are crucial for circular photoga… ▽ More We develop a six-band $\mathbf{k} \cdot \mathbf{p}$ model to describe the electronic structure and optical response of chiral multifold semimetals, such as RhSi. By means of invariants method we construct the effective Hamiltonian describing the states near the $Γ$-point of the Brillouin zone where the spin-orbit coupling and $\mathbf{k}$-linear Rashba terms, which are crucial for circular photogalvanic effect, are taken into account. The model is parameterized using tight-binding calculations. We compute the interband absorption spectrum, showing a linear-in-frequency dependence at low energies and a resonant feature near the spin-orbit splitting energy. Furthermore, we calculate the circular photogalvanic effect. In agreement with previous works the current generation rate at low frequencies exhibits a quantized low-frequency response, governed by the universal value $|\mathcal{C}| = 4$ for the effective topological charge. Our results provide an analytical framework for understanding the role of Rashba coupling and topology in the optoelectronic properties of multifold chiral semimetals. △ Less

Submitted 26 June, 2025; originally announced June 2025.

Comments: 5+ pages, 2 figures, and 6+ pages supplement

Hanle effect in current induced spin orientation

Authors: L. E. Golub, E. L. Ivchenko

Abstract: Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting. Here we develop a theory of electrical spin orientation for magnetic two-dimensional heterostructures. Spin-orbit coupled graphene and semiconductor heterostructur… ▽ More Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting. Here we develop a theory of electrical spin orientation for magnetic two-dimensional heterostructures. Spin-orbit coupled graphene and semiconductor heterostructures proximitized by ferromagnets are considered. The analytical theory is based on the Boltzmann kinetic equation for a spin-dependent distribution function and collision integral. We show that the induced spin demonstrates the Hanle effect: a direction of the spin depends on the out-of-plane magnetization. Importantly, the Hanle effect is extremely sensitive to the details of electron elastic scattering. In semiconductor heterostructures, the effect of magnetization is present for scattering by long-range disorder and absent for short-range scattering. In spin-orbit-coupled graphene, the Hanle effect occurs at any scattering potential, but the direction of the spin strongly changes with variation of the disorder type. The theory also describes the effect of valley-Zeeman splitting on the electrical spin orientation in graphene, where the spin experiences opposite Hanle effects in two valleys. △ Less

Submitted 3 October, 2024; originally announced October 2024.

Comments: 5+3 pages, 3 figures

Influence of Coulomb interaction on interband photogalvanic effect in semiconductors

Authors: G. V. Budkin, E. L. Ivchenko

Abstract: The ballistic and shift contributions to the interband linear photogalvanic effect are calculated in the same band structure model of a noncentrosymmetric semiconductor. The calculation uses a two-band generalized Dirac effective Hamiltonian with the off-diagonal components containing $\mathbf{ k}$-dependent terms of the first and second order. The developed theory takes into account the Coulomb i… ▽ More The ballistic and shift contributions to the interband linear photogalvanic effect are calculated in the same band structure model of a noncentrosymmetric semiconductor. The calculation uses a two-band generalized Dirac effective Hamiltonian with the off-diagonal components containing $\mathbf{ k}$-dependent terms of the first and second order. The developed theory takes into account the Coulomb interaction between the photoexited electron and hole. It is shown that in typical semiconductors the ballistic photocurrent $j^{({\rm bal})}$ significantly exceeds the shift current $j^{({\rm sh})}$: the ratio $j^{({\rm sh})}/j^{({\rm bal})}$ has the order of $a_B/ \ell$, where $a_B$ is the Bohr radius and $\ell$ is the mean free path of photocarriers due to their quasi-momentum scattering. △ Less

Submitted 9 September, 2024; originally announced September 2024.

Interplay between hyperfine and anisotropic exchange interactions in exciton luminescence of quantum dots

Authors: D. S. Smirnov, E. L. Ivchenko

Abstract: The optical orientation and alignment of excitons in semiconductor indirect gap quantum dots have been studied theoretically. A special regime is analyzed in which the energy of the hyperfine interaction of an electron with lattice nuclei is small compared to the exchange splitting between bright and dark excitonic levels, but is comparable to the anisotropic exchange splitting of the radiative do… ▽ More The optical orientation and alignment of excitons in semiconductor indirect gap quantum dots have been studied theoretically. A special regime is analyzed in which the energy of the hyperfine interaction of an electron with lattice nuclei is small compared to the exchange splitting between bright and dark excitonic levels, but is comparable to the anisotropic exchange splitting of the radiative doublet. The dependencies of degrees of circular and linear polarization on the external magnetic field under resonant excitation of excitons by polarized light are calculated. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Comments: 11 pages, 1 figure. This is a translation of the original manuscript in Russian in memory of V. M. Agranovich, which is available in the supplementary files at arXiv and at https://www.dropbox.com/scl/fi/kyyyaaimh2bjtf1dycv11/Agranovich_memorium.pdf?rlkey=ix0t7gi0ytxu5et4yhw134ke8&st=yp7n4f3o&dl=1

Theory of acoustic-phonon involved exciton spin flip in perovskite semiconductors

Authors: A. V. Rodina, E. L. Ivchenko

Abstract: We present a theory of the acoustic phonon assisted spin-flip Raman scattering (SFRS), or resonant photoluminescence with the spin flip of a photoexcited exciton localized in a bulk cubic-phase perovskite semiconductor. We consider the spin-flip transitions between the ground-state exciton spin sublevels in external magnetic field B and discuss the variation of their probability rate and polarizat… ▽ More We present a theory of the acoustic phonon assisted spin-flip Raman scattering (SFRS), or resonant photoluminescence with the spin flip of a photoexcited exciton localized in a bulk cubic-phase perovskite semiconductor. We consider the spin-flip transitions between the ground-state exciton spin sublevels in external magnetic field B and discuss the variation of their probability rate and polarization selection rules with the increase of B. The transitions are treated as two-quantum processes with the virtual to and fro transfer of the electron in the electron-hole pair between the bottom and first excited conduction bands. The transfer occurs due to both the electron-hole exchange interaction and the electron-phonon interaction. The theoretical results allow one to distinguish the phonon assisted Raman scattering from (a) the resonant Raman scattering with the combined spin flip of the localized resident electron and hole and (b) the biexciton-mediated SFRS analyzed previously. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Comments: 12 pages, 2 figures

Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots

Authors: D. S. Smirnov, E. L. Ivchenko

Abstract: In this work, we theoretically investigate the optical orientation and alignment of excitons in quantum dots with weak electron-hole exchange interaction and long exciton radiative lifetimes. This particular regime is realized in semiconductor heterosystems where excitons are indirect in the $\boldsymbol r$ or $\boldsymbol k$ space. The main role in the fine structure of excitonic levels in these… ▽ More In this work, we theoretically investigate the optical orientation and alignment of excitons in quantum dots with weak electron-hole exchange interaction and long exciton radiative lifetimes. This particular regime is realized in semiconductor heterosystems where excitons are indirect in the $\boldsymbol r$ or $\boldsymbol k$ space. The main role in the fine structure of excitonic levels in these systems is played by the hyperfine interaction of the electron in the confined exciton and fluctuations of the Overhauser field. Along with it, the effects of nonradiative recombination and exchange interaction are considered. We start with the model of vanishing exchange interaction and nonradiative exciton recombination and then include them into consideration in addition to the strong Overhauser field. In the nanoobjects under study, the polarization properties of the resonant photoluminescence are shown to vary with the external magnetic filed in completely different way as compared with the behaviour of the conventional quantum dot structures. △ Less

Submitted 29 August, 2023; originally announced August 2023.

Comments: 10 pages, 4 figures

Electrical Magnetochiral current in Tellurium

Authors: L. E. Golub, E. L. Ivchenko, B. Spivak

Abstract: We have studied theoretically the effect of Electrical Magneto-Chiral Anisotropy (eMChA) in $p$-type tellurium crystals. It is shown that the terms $k_i B_j$ in the hole Hamiltonian, linear both in the wave vector ${\mathbf k}$ and the magnetic field ${\mathbf B}$, do not lead to the eMChA and one needs to include the higher-order terms like $k_i^3 B_j$. Two microscopic mechanisms of the effect ar… ▽ More We have studied theoretically the effect of Electrical Magneto-Chiral Anisotropy (eMChA) in $p$-type tellurium crystals. It is shown that the terms $k_i B_j$ in the hole Hamiltonian, linear both in the wave vector ${\mathbf k}$ and the magnetic field ${\mathbf B}$, do not lead to the eMChA and one needs to include the higher-order terms like $k_i^3 B_j$. Two microscopic mechanisms of the effect are considered. In the first one only elastic scattering of holes by impurities or imperfections are taken into consideration only. In the second mechanism, besides the elastic scattering processes the hole gas heating and its energy relaxation are taken into account. It is demonstrated that he both contributions to the magneto-induced rectification are comparable in magnitude. The calculation is performed by using two independent approaches, namely, in the time relaxation approximation and in the limit of of small chiral band parameter $β$. A bridge is thrown between the eMChA and magneto-induced photogalvanic effects. △ Less

Submitted 20 August, 2023; originally announced August 2023.

Comments: 12 pages, 1 figure

Tailoring the electron and hole Landé factors in lead halide perovskite nanocrystals by quantum confinement and halide exchange

Authors: M. O. Nestoklon, Erik Kirstein, D. R. Yakovlev, E. A. Zhukov, M. M. Glazov, M. A. Semina, E. L. Ivchenko, E. V. Kolobkova, M. S. Kuznetsova, Manfred Bayer

Abstract: The tunability of the optical properties of lead halide perovskite nanocrystals makes them highly appealing for applications. Both, halide anion exchange and quantum confinement pave the way for tailoring their band gap energy. For spintronics applications, the Landé g-factors of electrons and hole are of great importance. By means of the empirical tight-binding and $\textbf{k}\cdot\textbf{p}$ met… ▽ More The tunability of the optical properties of lead halide perovskite nanocrystals makes them highly appealing for applications. Both, halide anion exchange and quantum confinement pave the way for tailoring their band gap energy. For spintronics applications, the Landé g-factors of electrons and hole are of great importance. By means of the empirical tight-binding and $\textbf{k}\cdot\textbf{p}$ methods, we calculate them for nanocrystals of the class of all-inorganic lead halide perovskites CsPb$X_3$ ($X = \text{I},\,\text{Br},\,\text{Cl}$). The hole g-factor as function of the band gap follows the universal dependence found for bulk perovskites, while for the electrons a considerable modification is predicted. Based on the $\textbf{k}\cdot\textbf{p}$ analysis we conclude that this difference arises from the interaction of the bottom conduction band with the spin-orbit split electron states. The model predictions are confirmed by experimental data for the electron and hole g-factors in CsPbI3 nanocrystals placed in a glass matrix, measured by time-resolved Faraday ellipticity in a magnetic field at cryogenic temperatures. △ Less

Submitted 4 September, 2023; v1 submitted 17 May, 2023; originally announced May 2023.

Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors

Authors: A. V. Rodina, E. L. Ivchenko

Abstract: We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-f… ▽ More We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Comments: 15 pages, 2 figures, 2 tables

Optical transitions, exciton radiative decay, and valley coherence in lead chalcogenide quantum dots

Authors: S. V. Goupalov, E. L. Ivchenko, M. O. Nestoklon

Abstract: We propose the concept of valley coherence and superradiance in the reciprocal space and show that it leads to an $N$-fold decrease of the bright exciton radiative lifetime in quantum dots (QDs) of an $N$-valley semiconductor. Next we explain why, despite this, the exciton radiative lifetimes in PbX (X = S, Se, Te) QDs, measured from the photoluminescence decay, are in the microsecond range. We al… ▽ More We propose the concept of valley coherence and superradiance in the reciprocal space and show that it leads to an $N$-fold decrease of the bright exciton radiative lifetime in quantum dots (QDs) of an $N$-valley semiconductor. Next we explain why, despite this, the exciton radiative lifetimes in PbX (X = S, Se, Te) QDs, measured from the photoluminescence decay, are in the microsecond range. We also address peculiarities of the light-matter interaction in nanostructures made of narrow-gap materials with strong inter-band coupling. △ Less

Submitted 25 March, 2022; v1 submitted 19 March, 2022; originally announced March 2022.

Comments: 13 pages, 4 figures

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

Authors: E. Kirstein, D. R. Yakovlev, M. M. Glazov, E. A. Zhukov, D. Kudlacik, I. V. Kalitukha, V. F. Sapega, G. S. Dimitriev, M. A. Semina, M. O. Nestoklon, E. L. Ivchenko, N. E. Kopteva, D. N. Dirin, O. Nazarenko, M. V. Kovalenko, A. Baumann, J. Höcker, V. Dyakonov, M. Bayer

Abstract: The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)… ▽ More The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment. △ Less

Submitted 31 December, 2021; originally announced December 2021.

Journal ref: Nat Commun 13, 3062 (2022)

Sommerfeld enhancement factor in two-dimensional Dirac materials

Authors: N. V. Leppenen, L. E. Golub, E. L. Ivchenko

Abstract: In this work the above-band gap absorption spectrum in two-dimensional Dirac materials is calculated with account for the interaction between the photocarriers. Both the screened Rytova-Keldysh and pure Coulomb attraction potentials between the electron and hole are used in the study. We find that, in the materials under consideration, the interaction enhances the absorbance in the narrow interban… ▽ More In this work the above-band gap absorption spectrum in two-dimensional Dirac materials is calculated with account for the interaction between the photocarriers. Both the screened Rytova-Keldysh and pure Coulomb attraction potentials between the electron and hole are used in the study. We find that, in the materials under consideration, the interaction enhances the absorbance in the narrow interband edge region, in a sharp contrast to the band model with the parabolic free-carrier energy dispersion. We develop an approximation of the weak interaction which allows us to reproduce the main features of the exactly calculated Sommerfeld factor. We show a substantial reduction of this factor at higher frequencies due to the single-particle energy renormalization. △ Less

Submitted 26 April, 2021; originally announced April 2021.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 103, 235311 (2021)

Strong enhancement of heavy-hole Landé factor $q$ in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy

Authors: A. V. Trifonov, I. A. Akimov, L. E. Golub, E. L. Ivchenko, I. A. Yugova, A. N. Kosarev, S. E. Scholz, C. Sgroi, A. Ludwig, A. D. Wieck, D. R. Yakovlev, M. Bayer

Abstract: We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angu… ▽ More We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angular dependence of a trion photon echo signal on the direction of external magnetic field with respect to the sample axes. It results in a uniform magnetic-field-induced optical anisotropy for the entire quantum dot ensemble which is a prerequisite for realization of spin quantum memories and spin-photon entanglement in the ensemble. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 5 pages, 3 figures, supplementary information: 10 pages, 10 figs

Journal ref: Phys. Rev. B 104, L161405 (2021)

Chiral photodetector based on GaAsN

Authors: R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra, J. C. Sandoval-Santana, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical ele… ▽ More The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds. △ Less

Submitted 22 March, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 7 pages, 7 figures

Polarization sensitive photodectector based on GaAsN

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its oper… ▽ More We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on GaAsN, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its operation hinges mainly on two phenomena: the spin dependent capture of electrons and the hyperfine interaction between bound electrons and nuclei on Ga$^{2+}$ paramagnetic centers in GaAsN. The first phenomenon confers the device with sensitivity to the degree of circular polarization and the latter allows to discriminate the handedness of the incident light. △ Less

Submitted 19 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 064040 (2021)

Theory of single and double electron spin-flip Raman scattering in semiconductor nanoplatelets

Authors: A. V. Rodina, E. L. Ivchenko

Abstract: A theory of electron spin-flip Raman scattering (SFRS) is presented that describes the Raman spectral signals shifted by both single and twice the electron Zeeman energy under nearly resonant excitation of the heavy hole excitons in semiconductor nanoplatelets. We analyze the spin structure of photoexcited intermediate states, derive compound matrix elements of the spin-flip scattering and obtain… ▽ More A theory of electron spin-flip Raman scattering (SFRS) is presented that describes the Raman spectral signals shifted by both single and twice the electron Zeeman energy under nearly resonant excitation of the heavy hole excitons in semiconductor nanoplatelets. We analyze the spin structure of photoexcited intermediate states, derive compound matrix elements of the spin-flip scattering and obtain polarization properties of the one- and two-electron SFRS common for all the intermediate states. We show that, in the resonant scattering process under consideration, the complexes "exciton plus localized resident electrons" play the role of main intermediate states rather than tightly bound trion states. It is demonstrated that, in addition to the direct photoexcitation (and similar photorecombination) channel, there is another indirect channel contributing to the SFRS process. In the indirect channel, the photohole forms the exciton state with the resident electron removed from the localization site while the photoelectron becomes localized on this site. The theoretical results are compared with recent experimental findings for ensembles of CdSe nanoplatelets. △ Less

Submitted 20 November, 2020; v1 submitted 20 October, 2020; originally announced October 2020.

Comments: 17 pages, 3 figures, submitted

Journal ref: Phys. Rev. B 102, 235432 (2020)

Exciton oscillator strength in two-dimensional Dirac materials

Authors: N. V. Leppenen, L. E. Golub, E. L. Ivchenko

Abstract: Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the momentum space as a superposition of all four two-particle states including electron and hole states with both positive and negative energies. The matrix element o… ▽ More Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the momentum space as a superposition of all four two-particle states including electron and hole states with both positive and negative energies. The matrix element of exciton generation is shown to depend on the additional components of the exciton wavefunction. Both the Coulomb and the Rytova-Keldysh potentials are considered. The dependence of the binding energy on the coupling constant is analyzed for the ground and first excited exciton states. The binding energy and the oscillator strength are studied as functions of the environmental-dependent dielectric constant for real transition metal dichalcogenide monolayers. We demonstrate that the multicomponent nature of the exciton wavefunction is crucial for description of resonant optical properties of two-dimensional Dirac systems. △ Less

Submitted 9 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 102, 155305 (2020)

Semiclassical theory of the circular photogalvanic effect in gyrotropic systems

Authors: L. E. Golub, E. L. Ivchenko, B. Spivak

Abstract: We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for in… ▽ More We develop a theory of circular photogalvanic effect (CPGE) for classically high photon energies which exceed the electron scattering rate but are small compared to the average electron kinetic energy. In this frequency range one can calculate the CPGE by using two different approaches. In the fully quantum-mechanical approach we find the photocurrent density by applying Fermi's golden rule for indirect intraband optical transitions with virtual intermediate states both in the conduction and valence bands. In the framework of the semiclassical approach, we apply a generalized Boltzmann equation with accounts for the Berry-curvature induced anomalous velocity, side jumps and skew scattering. The calculation is carried out for a wurtzite symmetry crystal. Both methods yield the same results for the CPGE current demonstrating consistency between the two approaches and applicability of the semiclassical theory for the description of nonlinear high-frequency transport. △ Less

Submitted 27 July, 2020; v1 submitted 19 June, 2020; originally announced June 2020.

Comments: 8 pages, 1 figure

Journal ref: Phys. Rev. B 102, 085202 (2020)

Single and double electron spin-flip Raman scattering in CdSe colloidal nanoplatelets

Authors: Dennis Kudlacik, Victor F. Sapega, Dmitri R. Yakovlev, Ina V. Kalitukha, Elena V. Shornikova, Anna V. Rodina, Eugeniius L. Ivchenko, Grigorii S. Dimitriev, Michel Nasilowski, Benoit Dubertret, Manfred Bayer

Abstract: CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron… ▽ More CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron Zeeman splitting are also observed. The theoretical analysis and experimental dependencies show that the mechanism responsible for the double flip involves two resident electrons interacting with a photoexcited exciton. Effects related to various orientations of the nanoplatelets in the ensemble and different orientations of the magnetic field are analyzed. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Journal ref: Nano Lett. 20 (2020) 517-525

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga$^{2+}$ centers

Authors: J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to m… ▽ More Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature. The mechanism behind the spin selective capture of electrons in Ga$^{2+}$ paramagnetic centers is revisited in this paper to address inconsistencies common to most previously presented models. Primarily, these errors manifest themselves as major disagreements with the experimental observations of two key characteristics of this phenomenon: the effective Overhauser-like magnetic field and the width of the photoluminescence Lorentzian-like curves as a function of the illumination power. These features are not only essential to understand the spin dependent recombination in GaAsN, but are also key to the design of novel spintronic devices. Here we demonstrate that the particular structure of the electron capture expressions introduces spurious electron-nucleus correlations that artificially alter the balance between the hyperfine and the Zeeman contributions. This imbalance strongly distorts the effective magnetic field and width characteristics. In this work we propose an alternative recombination mechanism that preserves the electron-nucleus correlations and, at the same time, keeps the essential properties of the spin selective capture of electrons. This mechanism yields a significant improvement to the agreement between experimental and theoretical results. In particular, our model gives results in very good accord with the experimental effective Overhauser-like magnetic field and width data, and with the degree of circular polarization under oblique magnetic fields. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 101, 075201 (2020)

Nonlinear Absorption and Photocurrent in Weyl Semimetals

Authors: N. V. Leppenen, E. L. Ivchenko, L. E. Golub

Abstract: Theory of light absorption and circular photocurrent in Weyl semimetals is developed for arbitrary large light intensities with account for both elastic and inelastic relaxation processes of Weyl fermions. The direct optical transition rate is shown to saturate at large intensity, and the saturation behaviour depends on the light polarization and on the ratio of the elastic and inelastic relaxatio… ▽ More Theory of light absorption and circular photocurrent in Weyl semimetals is developed for arbitrary large light intensities with account for both elastic and inelastic relaxation processes of Weyl fermions. The direct optical transition rate is shown to saturate at large intensity, and the saturation behaviour depends on the light polarization and on the ratio of the elastic and inelastic relaxation times. The linear-circular dichroism in absorption is shown to exceed 10~\% at intermediate light wave amplitudes and fast energy relaxation. At large intensity $I$, the light absorption coefficient drops as $1/\sqrt{I}$, and the circular photogalvanic current increases as $\sqrt{I}$. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: 6 pages, 5 figures

Journal ref: Phys. Status Solidi B 1900305 (2019)

Circular photocurrent in Weyl semimetals with mirror symmetry

Authors: N. V. Leppenen, E. L. Ivchenko, L. E. Golub

Abstract: We have studied theoretically the Weyl semimetals the point symmetry group of which has reflection planes and which contain equivalent valleys with opposite chiralities. These include the most frequently studied compounds, namely the transition metals monopnictides TaAs, NbAs, TaP, NbP, and also Bi$_{1-x}$Sb$_x$ alloys. The circular photogalvanic current, which inverts its direction under reversal… ▽ More We have studied theoretically the Weyl semimetals the point symmetry group of which has reflection planes and which contain equivalent valleys with opposite chiralities. These include the most frequently studied compounds, namely the transition metals monopnictides TaAs, NbAs, TaP, NbP, and also Bi$_{1-x}$Sb$_x$ alloys. The circular photogalvanic current, which inverts its direction under reversal of the light circular polarization, has been calculated for the light absorption under direct optical transitions near the Weyl points. In the studied materials, the total contribution of all the valleys to the photocurrent is nonzero only beyond the simple Weyl model, namely, if the effective electron Hamiltonian is extended to contain either an anisotropic spin-dependent linear contribution together with a spin-independent tilt or a spin-dependent contribution cubic in the electron wave vector $\bf{k}$. With allowance for the tilt of the energy dispersion cone in a Weyl semimetal of the $C_{4v}$ symmetry, the photogalvanic current is expressed in terms of the components of the second-rank symmetric tensor that determines the energy spectrum of the carriers near the Weyl node; at low temperature, this contribution to the photocurrent is generated within a certain limited frequency range $Δ$. The photocurrent due to the cubic corrections, in the optical absorption region, is proportional to the light frequency squared and generated both inside and outside the $Δ$ window. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Comments: 8 pages, 2 figures, JETP in press

Journal ref: JETP 129, 139-146 (2019)

High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures

Authors: S. Hubmann, G. V. Budkin, A. P. Dmitriev, S. Gebert, V. V. Belkov, E. L. Ivchenko, S. Baumann, M. Otteneder, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, S. D. Ganichev

Abstract: We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show t… ▽ More We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency $ω=2πf$ is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7\,nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from $f=0.6$ to 1.07\,THz and intensities up to hundreds of kW/cm$^2$. We demonstrate that the probability of the impact ionization is proportional to the exponential function, $\exp(-E_0^2/E^2)$, of the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. The effect is observable in a wide temperature range from 4.2 to 90\,K, with the characteristic field increasing with rising temperature. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 085312 (2019)

Third harmonic generation on exciton-polaritons in bulk semiconductors subject to a magnetic field

Authors: W. Warkentin, J. Mund, D. R. Yakovlev, V. V. Pavlov, R. V. Pisarev, A. V. Rodina, M. A. Semina, M. M. Glazov, E. L. Ivchenko, M. Bayer

Abstract: We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing a topic that had remained unexplored so far. In these crystals, crystallographic THG is allowed in the electric-dipole approximation, so that no stron… ▽ More We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing a topic that had remained unexplored so far. In these crystals, crystallographic THG is allowed in the electric-dipole approximation, so that no strong magnetic-field-induced changes of the THG are expected. Therefore, it comes as a total surprise that we observe a drastic enhancement of the THG intensity by a factor of fifty for the $1s$-exciton-polariton in GaAs in magnetic fields up to 10 T. In contrast, the corresponding enhancement is moderate for CdTe and almost neglectful for ZnSe. In order to explain this strong variation, we develop a microscopic theory accounting for the optical harmonics generation on exciton-polaritons and analyze the THG mechanisms induced by the magnetic field. The calculations show that the increase of THG intensity is dominated by the magnetic field enhancement of the exciton oscillator strength which is particularly strong for GaAs in the studied range of field strengths. The much weaker increase of THG intensity in CdTe and ZnSe is explained by the considerably larger exciton binding energies, leading to a weaker modification of their oscillator strengths by the magnetic field. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 16 pages, 13 figures

Journal ref: Phys. Rev. B 98, 075204 (2018)

Circular and magnetoinduced photocurrents in Weyl semimetals

Authors: L. E. Golub, E. L. Ivchenko

Abstract: We develop a theory of the direct interband and indirect intraband photogalvanic effects in Weyl semimetals belonging to the gyrotropic classes with improper symmetry operations. At zero magnetic field, an excitation of such a material with circularly polarized light leads to a photocurrent whose direction depends on the light helicity. We show that in the semimetals of the C$_{2v}$ symmetry, an a… ▽ More We develop a theory of the direct interband and indirect intraband photogalvanic effects in Weyl semimetals belonging to the gyrotropic classes with improper symmetry operations. At zero magnetic field, an excitation of such a material with circularly polarized light leads to a photocurrent whose direction depends on the light helicity. We show that in the semimetals of the C$_{2v}$ symmetry, an allowance for the tilt term in the effective Hamiltonian is enough to prevent cancellation of the photocurrent contributions from the Weyl cones of opposite chiralities. In the case of the C$_{4v}$ symmetry, in addition to the tilt it is necessary to include terms of the second- or third-order in the electron quasi-momentum. For indirect intraband transitions, the helicity-dependent photocurrent generated within each Weyl node takes on a universal value determined by the fundamental constants, the light frequency and electric field. We have complementarily investigated the magneto-gyrotropic photogalvanic effect, i.e. an appearance of a photocurrent under unpolarized excitation in a magnetic field. In quantized magnetic fields, the photocurrent is caused by optical transitions between the one-dimensional magnetic subbands. A value of the photocurrent is particularly high if one of the photocarriers is excited to the chiral subband with the energy below the cyclotron energy. △ Less

Submitted 3 May, 2018; v1 submitted 7 March, 2018; originally announced March 2018.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. B 98, 075305 (2018)

Spin-dependent photogalvanic effects (A Review)

Authors: E. L. Ivchenko, S. D. Ganichev

Abstract: In this paper we review both theoretical and experimental studies on spin-related photogalvanic effects. A short phenomenological introduction is followed by the discussion of the circular photogalvanic effect, the direct and inverse spin-galvanic effects and the trembling motion of spin-polarized electrons. Then we consider the pure spin currents and magneto-gyrotropic photocurrents. Finally, we… ▽ More In this paper we review both theoretical and experimental studies on spin-related photogalvanic effects. A short phenomenological introduction is followed by the discussion of the circular photogalvanic effect, the direct and inverse spin-galvanic effects and the trembling motion of spin-polarized electrons. Then we consider the pure spin currents and magneto-gyrotropic photocurrents. Finally, we discuss the spin-dependent photocurrents in topological insulators and Weyl semimetals. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures

Authors: P. Faltermeier, G. V. Budkin, S. Hubmann, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-perio… ▽ More We report on the observation and systematic study of polarization sensitive magnetic quantum ratchet effects induced by alternating electric fields in the terahertz frequency range. The effects are detected in (Cd,Mn)Te-based quantum well (QW) structures with inter-digitated dual-grating-gate (DGG) lateral superlattices. A dc electric current excited by cw terahertz laser radiation shows 1/B-periodic oscillations with an amplitude much larger than the photocurrent at zero magnetic field. Variation of gate voltages applied to individual grating gates of the DGG enables us to change the degree and the sign of the lateral asymmetry in a controllable way. The data reveal that the photocurrent reflects the degree of lateral asymmetry induced by different gate potentials. We show that the magnetic ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, which are sensitive to the corresponding polarization of the driving electromagnetic force. Theoretical analysis performed in the framework of semiclassical approach and taking into account Landau quantization describes the experimental results well. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Photocurrents in gyrotropic Weyl semimetals

Authors: L. E. Golub, E. L. Ivchenko, B. Z. Spivak

Abstract: We present results of a theoretical study of photocurrents in the Weyl semimetals belonging to the gyrotropic symmetry classes. We show that, in weakly gyrotropic symmetry classes C$_{nv}$ ($n = 3,4,6$), the circular photocurrent transverse to the incidence direction appears only with account, in the electron effective Hamiltonian, for both linear and quadratic or cubic in quasi-momentum spin-depe… ▽ More We present results of a theoretical study of photocurrents in the Weyl semimetals belonging to the gyrotropic symmetry classes. We show that, in weakly gyrotropic symmetry classes C$_{nv}$ ($n = 3,4,6$), the circular photocurrent transverse to the incidence direction appears only with account, in the electron effective Hamiltonian, for both linear and quadratic or cubic in quasi-momentum spin-dependent terms as well as a spin-independent term resulting in the tilt of the cone dispersion. A polarization-independent magneto-induced photocurrent is predicted which is also allowed in gyrotropic systems only. For crystals of the C$_{2v}$ symmetry, we consider a microscopic mechanism of the photocurrent in a quantized magnetic field which is generated under direct optical transitions between the ground and the first excited magnetic subbands. It is shown that this current becomes nonzero with allowance for anisotropic tilt of the dispersion cones. △ Less

Submitted 18 May, 2017; v1 submitted 12 May, 2017; originally announced May 2017.

Comments: 4 pages, accepted to JETP Letters

Journal ref: JETP Letters 105, 782-785 (2017)

Charged excitons in monolayer WSe$_2$: experiment and theory

Authors: E. Courtade, M. Semina, M. Manca, M. M. Glazov, C. Robert, F. Cadiz, G. Wang, T. Taniguchi, K. Watanabe, M. Pierre, W. Escoffier, E. L. Ivchenko, P. Renucci, X. Marie, T. Amand, B. Urbaszek

Abstract: Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X… ▽ More Charged excitons, or X$^{\pm}$-trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X$^0$ they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe$_2$ monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X$^+$ and X$^-$ and the X$^-$ fine structure. We find in the charge neutral regime, the X$^0$ emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X$^0$ and an excited state of the X$^0$ are visible. In the $n$-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6~meV for X$^-$ is observed. We present a symmetry analysis of the different X$^+$ and X$^-$ trion states and results of the binding energy calculations. We compare the trion binding energy for the $n$-and $p$-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X$^+$ and X$^-$ trions as well as the fine structure of the X$^-$ state can be related to the short-range Coulomb exchange interaction between the charge carriers. △ Less

Submitted 9 May, 2018; v1 submitted 5 May, 2017; originally announced May 2017.

Comments: 13 pages, 6 figures, 2 tables

Journal ref: Phys. Rev. B 96, 085302 (2017)

Spin dynamics and magnetic-field-induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

Authors: T. S. Shamirzaev, J. Rautert, D. R. Yakovlev, J. Debus, A. Yu. Gornov, M. M. Glazov, E. L. Ivchenko, M. Bayer

Abstract: The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of photoluminescence, $P_c$, is studied as function of the magnetic field strength and direction as well as sample temperature. The observed nonmonotonic behaviour of… ▽ More The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band alignment. The magnetic-field-induced circular polarization of photoluminescence, $P_c$, is studied as function of the magnetic field strength and direction as well as sample temperature. The observed nonmonotonic behaviour of these functions is provided by the interplay of bright and dark exciton states contributing to the emission. To interpret the experiment, we have developed a kinetic master equation model which accounts for the dynamics of the spin states in this exciton quartet, radiative and nonradiative recombination processes, and redistribution of excitons between these states as result of spin relaxation. The model offers quantitative agreement with experiment and allows us to evaluate, for the studied structure, the heavy-hole $g$ factor, $g_{hh}=+3.5$, and the spin relaxation times of electron, $τ_{se} = 33~μ$s, and hole, $τ_{sh} = 3~μ$s, bound in the exciton. △ Less

Submitted 24 April, 2017; originally announced April 2017.

Comments: 17 pages, 16 figures

Journal ref: Phys. Rev. B 96, 035302 (2017)

Electron-nuclear coherent spin oscillations probed by spin dependent recombination

Authors: S. Azaizia, H. Carrère, J. C. Sandoval-Santana, V. G. Ibarra-Sierra, V. K. Kalevich, E. L. Ivchenko, L. A. Bakaleinikov, X. Marie, T. Amand, A. Kunold, A. Balocchi

Abstract: We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of… ▽ More We demonstrate the detection of coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence (PL) in zero external magnetic field. On the base of a pump-probe PL experiment we measure, directly in the temporal domain, the hyperfine constant of an electron coupled to a gallium defect in GaAsN by tracing the dynamical behavior of the conduction electron spin-dependent recombination to the defect site. The hyperfine constants and the relative abundance of the nuclei isotopes involved can be determined without the need of electron spin resonance technique and in the absence of any magnetic field. Information on the nuclear and electron spin relaxation damping parameters can also be estimated from the oscillations damping and the long delay behavior. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 97, 155201 (2018)

Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice

Authors: P. Faltermeier, G. V. Budkin, J. Unverzagt, S. Hubmann, A. Pfaller, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, V. V. Popov, D. V. Fateev, D. A. Kozlov, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurr… ▽ More We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B-oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 155442 (2017)

Coherent Electron Zitterbewegung

Authors: I. Stepanov, M. Ersfeld, A. V. Poshakinskiy, M. Lepsa, E. L. Ivchenko, S. A. Tarasenko, B. Beschoten

Abstract: Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high fre… ▽ More Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high frequencies which are out of reach experimentally. Recently, it was shown theoretically that electrons in III-V semiconductors are governed by similar equations in the presence of spin-orbit coupling. The small energy splittings up to meV result in Zitterbewegung at much smaller frequencies which should be experimentally accessible as an AC current. Here, we demonstrate the Zitterbewegung of electrons in a solid. We show that coherent electron Zitterbewegung can be triggered by initializing an ensemble of electrons in the same spin states in strained n-InGaAs and is probed as an AC current at GHz frequencies. Its amplitude is shown to increase linearly with both the spin-orbit coupling strength and the Larmor frequency of the external magnetic field. The latter dependence is the hallmark of the dynamical generation mechanism of the oscillatory motion of the Zitterbewegung. Our results demonstrate that relativistic quantum mechanics can be studied in a rather simple solid state system at moderate temperatures. Furthermore, the large amplitude of the AC current at high precession frequencies enables ultra-fast spin sensitive electric read-out in solids. △ Less

Submitted 19 December, 2016; originally announced December 2016.

Comments: 6 pages, 3 figures

Electron-nuclear spin dynamics of Ga$^{2+}$ paramagnetic centers probed by spin dependent recombination: A master equation approach

Authors: V. G. Ibarra-Sierra, J. C. Sandoval-Santana, S. Azaizia, H. Carrère, L. A. Bakaleinikov, V. K. Kalevich, E. L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold

Abstract: Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching… ▽ More Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other interesting properties, under circularly polarized light, gallium centers in GaAsN act as spin filters that dynamically polarize free and bound electrons reaching record spin polarizations (100\%). Furthermore, the recent observation of the amplification of the spin filtering effect under a Faraday configuration magnetic field has suggested that the hyperfine interaction that couples bound electrons and nuclei permits the optical manipulation of its nuclear spin polarization. Even though the mechanisms behind the nuclear spin polarization in gallium centers are fairly well understood, the origin of nuclear spin relaxation and the formation of an Overhauser-like magnetic field remain elusive. In this work we develop a model based on the master equation approach to describe the evolution of electronic and nuclear spin polarizations of gallium centers interacting with free electrons and holes. Our results are in good agreement with existing experimental observations. In regard to the nuclear spin relaxation, the roles of nuclear dipolar and quadrupolar interactions are discussed. Our findings show that, besides the hyperfine interaction, the spin relaxation mechanisms are key to understand the amplification of the spin filtering effect and the appearance of the Overhauser-like magnetic field. Based on our model's results we propose an experimental protocol based on time resolved spectroscopy. It consists of a pump-probe photoluminescence scheme that would allow the detection and the tracing of the electron-nucleus flip-flops through time resolved PL measurements. △ Less

Submitted 13 November, 2016; originally announced November 2016.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 95, 195204 (2017)

Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots

Authors: M. Vidal, M. V. Durnev, L. Bouet, T. Amand, M. M. Glazov, E. L. Ivchenko, P. Zhou, G. Wang, T. Mano, T. Kuroda, X. Marie, K. Sakoda, B. Urbaszek

Abstract: In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots.… ▽ More In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape. △ Less

Submitted 9 March, 2016; originally announced March 2016.

Comments: 4 pages, 2 figures, supplement

Journal ref: Phys. Rev. B 94, 121302 (2016)

Spin-dependent recombination in GaAs(1-x)N(x) alloys at oblique magnetic field

Authors: E. L. Ivchenko, L. A. Bakaleinikov, M. M. Afanasiev, V. K. Kalevich

Abstract: We have studied experimentally and theoretically the optical orientation and spin-dependent Shockley-Read-Hall recombination in a semiconductor in a magnetic field at an arbitrary angle between the field and circularly polarized exciting beam. The experiments are performed at room temperature in GaAsN alloys where deep paramagnetic centers are responsible for the spin-dependent recombination. The… ▽ More We have studied experimentally and theoretically the optical orientation and spin-dependent Shockley-Read-Hall recombination in a semiconductor in a magnetic field at an arbitrary angle between the field and circularly polarized exciting beam. The experiments are performed at room temperature in GaAsN alloys where deep paramagnetic centers are responsible for the spin-dependent recombination. The observed magnetic-field dependences of the circular polarization r(B) and intensity J(B) of photoluminescence can be approximately described as a superposition of two Lorentzian contours, normal and inverted, with their half-widths differing by an order of magnitude. The normal (narrow) Lorentzian contour is associated with depolarization of the transverse (to the field) component of spin polarization of the localized electrons, whereas the inverted (broad) Lorentzian is due to suppression of the hyperfine interaction of the localized electron with the defect nucleus. The ratio between the height of one Lorentzian and depth of the other is governed by the field tilt angle. In contrast to the hyperfine interaction of a shallow-donor-bound electron with a large number of nuclei of the crystal lattice, in the optical orientation of the electron-nuclear system under study no additional narrow peak appears in the oblique field. This result demonstrates that in the GaAsN alloys the hyperfine interaction of the localized electron with the single nucleus of the paramagnetic center remains strong even at room temperature. For a theoretical description of the experiment, we have extended the theory of spin-dependent recombination via deep paramagnetic centers with the nuclear angular momentum I = 1/2 developed previously for the particular case of the longitudinal field. The calculated curves r(B), J(B) agree with the approximate description of the experimental dependences as a sum of two Lorentzians. △ Less

Submitted 18 February, 2016; v1 submitted 12 February, 2016; originally announced February 2016.

Comments: Submitted to Physics of the Solid State, 19 pages, 5 figures; Sequence of references is corrected, results unchanged

Giant permanent dipole moment of 2D excitons bound to a single stacking fault

Authors: Todd Karin, Xiayu Linpeng, M. M. Glazov, M. V. Durnev, E. L. Ivchenko, Sarah Harvey, Ashish K. Rai, Arne Ludwig, Andreas D. Wieck, Kai-Mei C. Fu

Abstract: We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential lea… ▽ More We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases. △ Less

Submitted 6 June, 2016; v1 submitted 15 January, 2016; originally announced January 2016.

Comments: 5 pages, 3 figures plus supplement

Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots

Authors: M. V. Durnev, M. Vidal, L. Bouet, T. Amand, M. M. Glazov, E. L. Ivchenko, P. Zhou, G. Wang, T. Mano, N. Ha, T. Kuroda, X. Marie, K. Sakoda, B. Urbaszek

Abstract: We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescen… ▽ More We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 12 pages, 5 figures

Journal ref: Phys. Rev. B 93, 245412 (2016)

Terahertz ratchet effects in graphene with a lateral superlattice

Authors: P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, Ming-Hao Liu, L. E. Golub, E. L. Ivchenko, V. V. Popov, D. V. Fateev, K. V. Mashinsky, F. Fromm, Th. Seyller, S. D. Ganichev

Abstract: Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures.… ▽ More Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction. △ Less

Submitted 27 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. B 93, 075422 (2016)

Theory of optical spin control in quantum dot microcavities

Authors: D. S. Smirnov, M. M. Glazov, E. L. Ivchenko, L. Lanco

Abstract: We present a microscopic theory of optical initialization, control and detection for a single electron spin in a quantum dot embedded into a zero-dimensional microcavity. The strong coupling regime of the trion and the cavity mode is addressed. We demonstrate that efficient spin orientation by a single circularly polarized pulse is possible in relatively weak transverse magnetic fields. The possib… ▽ More We present a microscopic theory of optical initialization, control and detection for a single electron spin in a quantum dot embedded into a zero-dimensional microcavity. The strong coupling regime of the trion and the cavity mode is addressed. We demonstrate that efficient spin orientation by a single circularly polarized pulse is possible in relatively weak transverse magnetic fields. The possibilities for spin control by additional circularly polarized pulse are analyzed. Under optimal conditions the Kerr and Faraday rotation angles induced by the spin polarized electron may reach tens of degrees. △ Less

Submitted 1 September, 2015; v1 submitted 8 July, 2015; originally announced July 2015.

Comments: 14 pages, 7 figures, v2 contains minor revisions

Journal ref: Phys. Rev. B 92, 115305 (2015)

Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal

Authors: V. V. Popov, D. V. Fateev, E. L. Ivchenko, S. D. Ganichev

Abstract: We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of… ▽ More We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak coupling regime of their anticrossing. Large plasmon wavevector (which is typically by two-three orders of magnitude greater than the terahertz photon wavevector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems. △ Less

Submitted 26 May, 2015; originally announced May 2015.

Comments: 9 pages, 10 figures, submitted to Physical Review B

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Authors: M. M. Glazov, E. L. Ivchenko, G. Wang, T. Amand, X. Marie, B. Urbaszek, B. L. Liu

Abstract: Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows… ▽ More Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by circularly polarized light selectively creates electron-hole pairs or excitons in non-equivalent valleys in momentum space, depending on the light helicity. This allows studying the inter-valley dynamics of charge carriers and Coulomb complexes by means of optical spectroscopy. Here we present a concise review of the neutral exciton fine structure and its spin and valley dynamics in monolayers of transition metal dichalcogenides. It is demonstrated that the long-range exchange interaction between an electron and a hole in the exciton is an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys. We discuss the physical origin of the long-range exchange interaction and outline its derivation in both the electrodynamical and $\mathbf k \cdot \mathbf p$ approaches. We further present a model of bright exciton spin dynamics driven by an interplay between the long-range exchange interaction and scattering. Finally, we discuss the application of the model to describe recent experimental data obtained by time-resolved photoluminescence and Kerr rotation techniques. △ Less

Submitted 16 September, 2015; v1 submitted 15 April, 2015; originally announced April 2015.

Comments: 15 pages, 12+1 figures, Feature article submitted to pss b as contribution of IWEPNM 2015

Journal ref: Phys. Status Solidi B 252, No. 11, 2349-2362 (2015)

Magneto-optics in transition metal diselenide monolayers

Authors: G. Wang, L. Bouet, M. M. Glazov, T. Amand, E. L. Ivchenko, E. Palleau, X. Marie, B. Urbaszek

Abstract: We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated… ▽ More We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley polarization of the neutral and the charged exciton (trion) can be tuned by the magnetic field, independent of the excitation laser polarization. In the investigated WSe2 monolayer sample the evolution of the trion valley polarization depends both on the applied magnetic field and the excitation laser helicity, while the neutral exciton valley polarization depends only on the latter. Remarkably we observe a reversal of the sign of the trion polarization between WSe2 and MoSe2. For both systems we observe a clear Zeeman splitting for the neutral exciton and the trion of about $\pm2$meV at $B_z\mp9$T. The extracted Landé-factors for both exciton complexes in both materials are $g\approx -4$. △ Less

Submitted 13 March, 2015; originally announced March 2015.

Comments: 9 pages, 2 figures

Journal ref: 2D Materials 2 (2015) 034002

Spin-dependent recombination and hyperfine interaction at the deep defects

Authors: E. L. Ivchenko, L. A. Bakaleinikov, V. K. Kalevich

Abstract: We present a theoretical study of optical electron-spin orientation and spin-dependent Shockley-Read-Hall recombination taking into account the hyperfine coupling between the bound-electron spin and the nuclear spin of a deep paramagnetic center. We show that the number of master rate equations for the components of the electron-nuclear spin-density matrix is considerably reduced due to the restri… ▽ More We present a theoretical study of optical electron-spin orientation and spin-dependent Shockley-Read-Hall recombination taking into account the hyperfine coupling between the bound-electron spin and the nuclear spin of a deep paramagnetic center. We show that the number of master rate equations for the components of the electron-nuclear spin-density matrix is considerably reduced due to the restrictions imposed by the axial symmetry of the system under consideration. The rate equations describe the Zeeman splitting of the electron spin sublevels in the longitudinal magnetic field, the spin relaxation of free and bound electrons, and the nuclear spin relaxation in the two defect states, with one and two (singlet) bound electrons. The general theory is developed for an arbitrary value of the nuclear spin I, the magnetic-field and excitation-power dependencies of the electron and nuclear spin polarizations are calculated for the particular value of I = 1/2. The role of the nuclear spin relaxation in each of the both defect states is analyzed. The circular polarization and intensity of the edge photoluminescence as well as the dynamic nuclear spin polarization as functions of the excitation power are shown to have bell-shaped forms △ Less

Submitted 27 December, 2014; v1 submitted 4 December, 2014; originally announced December 2014.

Comments: 22 pages, 5 figures, revised the title of the bottom axis in Fig.5, corrected typos; results unchanged

Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

Authors: S. A. Tarasenko, M. V. Durnev, M. O. Nestoklon, E. L. Ivchenko, Jun-Wei Luo, Alex Zunger

Abstract: We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectr… ▽ More We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption. △ Less

Submitted 7 November, 2014; originally announced November 2014.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 91, 081302(R) (2015)

Charge tuning in [111] grown GaAs droplet quantum dots

Authors: L. Bouet, M. Vidal, T. Mano, N. Ha, T. Kuroda, M. V. Durnev, M. M. Glazov, E. L. Ivchenko, X. Marie, T. Amand, K. Sakoda, G. Wang, B. Urbaszek

Abstract: We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence… ▽ More We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields. △ Less

Submitted 24 July, 2014; originally announced July 2014.

Comments: 5 pages, 3 figures

Journal ref: Applied Physics Letters 105, 082111 (2014)

Effect of carrier heating on photovoltage in FET

Authors: E. L. Ivchenko

Abstract: We have calculated, within the framework of the Boltzmann equation, a dc electric current and emf in a two-dimensional system induced by the high-frequency field of an electromagnetic wave or the electric field of a plasmon wave. It is established that the generated current consists of two contributions, one of which is proportional to the real part of the wave vector projection of the exciting wa… ▽ More We have calculated, within the framework of the Boltzmann equation, a dc electric current and emf in a two-dimensional system induced by the high-frequency field of an electromagnetic wave or the electric field of a plasmon wave. It is established that the generated current consists of two contributions, one of which is proportional to the real part of the wave vector projection of the exciting wave onto the interface plane and represents the electron drag effect, and the other contribution is proportional to the extinction coefficient of the wave in the interface plane. It is shown that the main cause of the second contribution is a nonuniform electron heating created by the wave and controlled by the energy relaxation time of the electron gas. In FET the heating mechanism of the electric-current formation can remarkably exceed the current calculated neglecting the heating. △ Less

Submitted 7 July, 2014; originally announced July 2014.

Comments: 5 pages, 0 figures

Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

Authors: J. Debus, T. S. Shamirzaev, D. Dunker, V. F. Sapega, E. L. Ivchenko, D. R. Yakovlev, A. I. Toropov, M. Bayer

Abstract: The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for st… ▽ More The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory. △ Less

Submitted 9 June, 2014; originally announced June 2014.

Comments: 5 pages, 3 figures

Spin dynamics in semiconductors in the streaming regime

Authors: L. E. Golub, E. L. Ivchenko

Abstract: We present results of a cross-disciplinary theoretical research at the interface of spin physics and hot-electron transport. A moderately strong electric field is assumed to provide the streaming regime where each free charge carrier, an electron or a hole, accelerates quasiballistically in the "passive" region until reaching the optical-phonon energy, then emits an optical phonon and starts the n… ▽ More We present results of a cross-disciplinary theoretical research at the interface of spin physics and hot-electron transport. A moderately strong electric field is assumed to provide the streaming regime where each free charge carrier, an electron or a hole, accelerates quasiballistically in the "passive" region until reaching the optical-phonon energy, then emits an optical phonon and starts the next period of acceleration. The inclusion of spin degree of freedom into the streaming-regime kinetics gives rise to rich and interesting spin-related phenomena. Firstly, in the streaming regime the spin relaxation is substantially modified, and the current-induced spin orientation is remarkably increased. Under short-pulsed photoexcitation at the bottom of conduction band the photoelectrons execute a periodic damped motion in the energy space with the period equal to the free flight time of an electron in the passive region. If the short optical pulse is circularly polarized so that the photocarriers are spin oriented, then the spin energy distribution is oscillating in time as well, which can be detected in the pump-probe time-resolved experiments. We show that the spin-orbit splitting of the conduction band becomes a source for additional spin oscillations, periodic or aperiodic depending on the value of electric field. △ Less

Submitted 27 April, 2014; originally announced April 2014.

Comments: 12 pages, 4 figures. A chapter in the book "Advances in Semiconductors Research", Nova Science Publishers

Spin noise spectroscopy of a single-quantum-well microcavity

Authors: S. V. Poltavtsev, I. I. Ryzhov, M. M. Glazov, G. G. Kozlov, V. S. Zapasskii, A. V. Kavokin, P. G. Lagoudakis, D. S. Smirnov, E. L. Ivchenko

Abstract: We report on the first experimental observation of spin noise in a single semiconductor quantum well embedded into a microcavity. The great cavity-enhanced sensitivity to fluctuations of optical anisotropy has allowed us to measure the Kerr rotation and ellipticity noise spectra in the strong coupling regime. The spin noise spectra clearly show two resonant features: a conventional magneto-resonan… ▽ More We report on the first experimental observation of spin noise in a single semiconductor quantum well embedded into a microcavity. The great cavity-enhanced sensitivity to fluctuations of optical anisotropy has allowed us to measure the Kerr rotation and ellipticity noise spectra in the strong coupling regime. The spin noise spectra clearly show two resonant features: a conventional magneto-resonant component shifting towards higher frequencies with magnetic field and an unusual "nonmagnetic" component centered at zero frequency and getting suppressed with increasing magnetic field. We attribute the first of them to the Larmor precession of free electron spins, while the second one being presumably due to hyperfine electron-nuclei spin interactions. △ Less

Submitted 22 January, 2014; v1 submitted 26 November, 2013; originally announced November 2013.

Comments: 5 pages, 6 figures + supplement (4 pages, 1 figure)

Journal ref: Phys. Rev. B 89, 081304(R), 2014