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Optical contrast analysis of α-RuCl$_3$ nanoflakes on oxidized silicon wafers
Authors:
Tatyana V. Ivanova,
Daniel Andres-Penares,
Yiping Wang,
Jiaqiang Yan,
Daniel Forbes,
Servet Ozdemir,
Kenneth S. Burch,
Brian D. Gerardot,
Mauro Brotons-Gisbert
Abstract:
α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thic…
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α-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl$_3$ nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl$_3$ nanoflakes with thicknesses below 100 nm on SiO$_2$/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl$_3$ nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of -0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl$_3$ thickness.
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Submitted 9 May, 2024;
originally announced May 2024.
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Solution of inverse problem for Gross-Pitaevskii equation with artificial neural networks
Authors:
Stepan P. Pokatov,
Tatiana Yu. Ivanova,
Denis A. Ivanov
Abstract:
We propose an Artificial Neural Network (ANN) design to solve the inverse problem for a 1D Gross-Pitaevskii equation (GPE). More precise, the ANN takes the squared modulus of the stationary GPE solution as an input and returns the parameters of the potential function and the factor in front of the GPE non-linear term. From the physical point of view the ANN predicts the parameters of a trap potent…
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We propose an Artificial Neural Network (ANN) design to solve the inverse problem for a 1D Gross-Pitaevskii equation (GPE). More precise, the ANN takes the squared modulus of the stationary GPE solution as an input and returns the parameters of the potential function and the factor in front of the GPE non-linear term. From the physical point of view the ANN predicts the parameters of a trap potential and the interaction constant of 1D Bose-Einstein Condensate (BEC) by its density distribution. Using the results of numerical solution of GPE for more than $30 000$ sets of GPE parameters as train and validation datasets we build the ANN as a fast and accurate inverse GPE solver.
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Submitted 25 June, 2023;
originally announced June 2023.
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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Authors:
Ekaterina Khestanova,
Tatyana Ivanova,
Roland Gillen,
Alessandro D Elia,
Oliver Nicholas Gallego Lacey,
Lena Wysocki,
Alexander Gruneis,
Vasily Kravtsov,
Wlodek Strupinski,
Janina Maultzsch,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Jose Avila,
Pavel Dudin,
Boris V. Senkovskiy
Abstract:
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the…
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Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.
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Submitted 5 April, 2023;
originally announced April 2023.
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Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe$_2$
Authors:
Artem N. Abramov,
Igor Y. Chestnov,
Ekaterina S. Alimova,
Tatiana Ivanova,
Ivan S. Mukhin,
Dmitry N. Krizhanovskii,
Ivan A. Shelykh,
Ivan V. Iorsh,
Vasily Kravtsov
Abstract:
Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on…
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Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe$_2$ via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.
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Submitted 23 January, 2023;
originally announced January 2023.
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Bulk ReSe2: record high refractive index and biaxially anisotropic material for all-dielectric nanophotonics
Authors:
Alexey Mikhin,
Anton Shubnic,
Tatyana Ivanova,
Ivan Shelykh,
Anton Samusev,
Ivan Iorsh
Abstract:
We show that bulk rhenium diselenide, ReSe2 is characterized by record high value of the refractive index exceeding 5 in near-infrared frequency range. We use back focal plane reflection spectroscopy to extract the components of the ReSe2 permittivity tensor and reveal its extreme biaxial anisotropy. We also demonstrate the good agreement between the experimental data and the predictions of the de…
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We show that bulk rhenium diselenide, ReSe2 is characterized by record high value of the refractive index exceeding 5 in near-infrared frequency range. We use back focal plane reflection spectroscopy to extract the components of the ReSe2 permittivity tensor and reveal its extreme biaxial anisotropy. We also demonstrate the good agreement between the experimental data and the predictions of the density functional theory. The combination of the large refractive index and giant optical anisotropy makes ReSe2 a perspective material for all-dielectric nanophotonics in the near-infrared frequency range.
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Submitted 16 January, 2023; v1 submitted 2 December, 2022;
originally announced December 2022.
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Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity
Authors:
Yeonjeong Koo,
Hyeongwoo Lee,
Tatiana Ivanova,
Ali Kefayati,
Vasili Perebeinos,
Ekaterina Khestanova,
Vasily Kravtsov,
Kyoung-Duck Park
Abstract:
Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a cha…
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Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy. Specifically, we control the radiative recombination path and emission rate, electronic bandgap energy, and neutral to charged exciton conversion with <20 nm spatial resolution in a reversible manner. It is achieved through the tip-induced engineering of Au tip-heterobilayer distance and interlayer distance, GPa scale local pressure, and plasmonic hot-electron injection respectively, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for developing versatile nano-excitonic devices based on TMD heterobilayers.
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Submitted 4 March, 2022;
originally announced March 2022.
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Tuning the universality class of phase transitions by feedback: Open quantum systems beyond dissipation
Authors:
D. A. Ivanov,
T. Yu. Ivanova,
S. F. Caballero-Benitez,
I. B. Mekhov
Abstract:
We shift the paradigm of feedback control from the control of quantum states to the control of phase transitions in quantum systems. We show that feedback allows tuning the universality class of phase transitions via modifying its critical exponent. We expand our previous treatment [D. A. Ivanov, T. Yu. Ivanova, S. F. Caballero-Benitez, and I. B. Mekhov, Phys. Rev. Lett. 124, 010603 (2020)] of Dic…
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We shift the paradigm of feedback control from the control of quantum states to the control of phase transitions in quantum systems. We show that feedback allows tuning the universality class of phase transitions via modifying its critical exponent. We expand our previous treatment [D. A. Ivanov, T. Yu. Ivanova, S. F. Caballero-Benitez, and I. B. Mekhov, Phys. Rev. Lett. 124, 010603 (2020)] of Dicke model and go beyond the approximation of adiabatically eliminated light field. Both linearized and nonlinear models of spin ensembles are considered. The tunability of quantum fluctuations near the critical point by the feedbacks of nontrivial shapes is explained by considering the fluctuation spectra and the system behavior at single quantum trajectories.
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Submitted 18 September, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Valley polarization of trions in monolayer MoSe$_2$ interfaced with bismuth iron garnet
Authors:
V. Kravtsov,
T. Ivanova,
A. N. Abramov,
P. V. Shilina,
P. O. Kapralov,
D. N. Krizhanovskii,
V. N. Berzhansky,
V. I. Belotelov,
I. A. Shelykh,
A. I. Chernov,
I. V. Iorsh
Abstract:
Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for information processing and storage. Here we study circularly polarized photoluminescence in heterostructures of monolayer MoSe$_2$ and thin films of ferrimagne…
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Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for information processing and storage. Here we study circularly polarized photoluminescence in heterostructures of monolayer MoSe$_2$ and thin films of ferrimagnetic bismuth iron garnet. We observe strong emission from charged excitons with negative valley polarization, which switches sign with increasing temperature, and demonstrate contrasting response to left and right circularly polarized excitation, associated with finite out-of-plane magnetization in the substrate. We propose a theoretical model accounting for magnetization-induced imbalance of charge carriers in the two valleys of MoSe$_2$, as well as for valley-switching scattering from B to A excitons and fast formation of trions with extended valley relaxation times, which shows excellent agreement with the experimental data. Our results provide new insights into valley physics in 2D semiconductors interfaced with magnetic substrates.
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Submitted 1 July, 2021; v1 submitted 10 May, 2021;
originally announced May 2021.
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Experimental observation of topological exciton-polaritons in transition metal dichalcogenide monolayers
Authors:
Mengyao Li,
Ivan Sinev,
Fedor Benimetskiy,
Tatyana Ivanova,
Ekaterina Khestanova,
Svetlana Kiriushechkina,
Anton Vakulenko,
Sriram Guddala,
Maurice Skolnick,
Vinod Menon,
Dmitry Krizhanovskii,
Andrea Alù,
Anton Samusev,
Alexander B. Khanikaev
Abstract:
The rise of quantum science and technologies motivates photonics research to seek new platforms with strong light-matter interactions to facilitate quantum behaviors at moderate light intensities. One promising platform to reach such strong light-matter interacting regimes is offered by polaritonic metasurfaces, which represent ultrathin artificial media structured on nano-scale and designed to su…
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The rise of quantum science and technologies motivates photonics research to seek new platforms with strong light-matter interactions to facilitate quantum behaviors at moderate light intensities. One promising platform to reach such strong light-matter interacting regimes is offered by polaritonic metasurfaces, which represent ultrathin artificial media structured on nano-scale and designed to support polaritons - half-light half-matter quasiparticles. Topological polaritons, or 'topolaritons', offer an ideal platform in this context, with unique properties stemming from topological phases of light strongly coupled with matter. Here we explore polaritonic metasurfaces based on 2D transition metal dichalcogenides (TMDs) supporting in-plane polarized exciton resonances as a promising platform for topological polaritonics. We enable a spin-Hall topolaritonic phase by strongly coupling valley polarized in-plane excitons in a TMD monolayer with a suitably engineered all-dielectric topological photonic metasurface. We first show that the strong coupling between topological photonic bands supported by the metasurface and excitonic bands in MoSe2 yields an effective phase winding and transition to a topolaritonic spin-Hall state. We then experimentally realize this phenomenon and confirm the presence of one-way spin-polarized edge topolaritons. Combined with the valley polarization in a MoSe2 monolayer, the proposed system enables a new approach to engage the photonic angular momentum and valley degree of freedom in TMDs, offering a promising platform for photonic/solid-state interfaces for valleytronics and spintronics.
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Submitted 23 September, 2020;
originally announced September 2020.
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Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
Authors:
V. Kravtsov,
A. D. Liubomirov,
R. V. Cherbunin,
A. Catanzaro,
A. Genco,
D. Gillard,
E. M. Alexeev,
T. Ivanova,
E. Khestanova,
I. A. Shelykh,
I. V. Iorsh,
A. I. Tartakovskii,
M. S. Skolnick,
D. N. Krizhanovskii
Abstract:
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with di…
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Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices.
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Submitted 7 July, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Cavityless self-organization of ultracold atoms due to the feedback-induced phase transition
Authors:
Denis A. Ivanov,
Tatiana Yu. Ivanova,
Santiago F. Caballero-Benitez,
Igor B. Mekhov
Abstract:
Feedback is a general idea of modifying system behaviour depending on the measurement outcomes. It spreads from natural sciences, engineering, and artificial intelligence to contemporary classical and rock music. Recently, feedback has been suggested as a tool to induce phase transitions beyond the dissipative ones and tune their universality class. Here, we propose and theoretically investigate a…
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Feedback is a general idea of modifying system behaviour depending on the measurement outcomes. It spreads from natural sciences, engineering, and artificial intelligence to contemporary classical and rock music. Recently, feedback has been suggested as a tool to induce phase transitions beyond the dissipative ones and tune their universality class. Here, we propose and theoretically investigate a system possessing such a feedback-induced phase transition. The system contains a Bose-Einstein condensate placed in an optical potential with the depth that is feedback-controlled according to the intensity of the Bragg-reflected probe light. We show that there is a critical value of the feedback gain where the uniform gas distribution loses its stability and the ordered periodic density distribution emerges. Due to the external feedback, the presence of a cavity is not necessary for this type of atomic self-organization. We analyze the dynamics after a sudden change of the feedback control parameter. The feedback time constant is shown to determine the relaxation above the critical point. We show as well that the control algorithm with the derivative of the measured signal dramatically decreases the transient time.
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Submitted 11 July, 2020; v1 submitted 29 February, 2020;
originally announced March 2020.
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Nonlinear polaritons in monolayer semiconductor coupled to optical bound states in the continuum
Authors:
V. Kravtsov,
E. Khestanova,
F. A. Benimetskiy,
T. Ivanova,
A. K. Samusev,
I. S. Sinev,
D. Pidgayko,
A. M. Mozharov,
I. S. Mukhin,
M. S. Lozhkin,
Y. V. Kapitonov,
A. S. Brichkin,
V. D. Kulakovskii,
I. A. Shelykh,
A. I. Tartakovskii,
P. M. Walker,
M. S. Skolnick,
D. N. Krizhanovskii,
I. V. Iorsh
Abstract:
Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical…
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Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix optical BIC in a photonic crystal slab with excitons in atomically thin semiconductor MoSe$_2$ to form nonlinear exciton-polaritons with a Rabi splitting of 27~meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into far-field towards the BIC wavevector, in combination with effective reduction of excitonic disorder through motional narrowing, results in small polariton linewidths below 3~meV. Together with strongly wavevector-dependent Q-factor, this provides for enhancement and control of polariton--polariton interactions and resulting nonlinear optical effects, paving the way towards tunable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics.
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Submitted 9 October, 2019; v1 submitted 31 May, 2019;
originally announced May 2019.
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Feedback-Induced Quantum Phase Transitions Using Weak Measurements
Authors:
D. A. Ivanov,
T. Yu. Ivanova,
S. F. Caballero-Benitez,
I. B. Mekhov
Abstract:
We show that applying feedback and weak measurements to a quantum system induces phase transitions beyond the dissipative ones. Feedback enables controlling essentially quantum properties of the transition, i.e., its critical exponent, as it is driven by the fundamental quantum fluctuations due to measurement. Feedback provides the non-Markovianity and nonlinearity to the hybrid quantum-classical…
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We show that applying feedback and weak measurements to a quantum system induces phase transitions beyond the dissipative ones. Feedback enables controlling essentially quantum properties of the transition, i.e., its critical exponent, as it is driven by the fundamental quantum fluctuations due to measurement. Feedback provides the non-Markovianity and nonlinearity to the hybrid quantum-classical system, and enables simulating effects similar to spin-bath problems and Floquet time crystals with tunable long-range (long-memory) interactions.
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Submitted 17 December, 2019; v1 submitted 24 March, 2019;
originally announced March 2019.
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Non-Linear Dynamics of Continuously Measured Bose-Einstein Condensates in One-Dimensional Harmonic Traps
Authors:
T. Yu. Ivanova,
M. S. Samoylova,
D. A. Ivanov
Abstract:
Continuous center-of-mass position measurements performed on an interacting harmonically trapped Bose-gas are considered. Using both semi-analytical mean-field approach and completely quantum numerical technique based on positive P-representation, it is demonstrated that the atomic delocalization due to the measurement back action is smaller for a strongly interacting gas. The numerically calculat…
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Continuous center-of-mass position measurements performed on an interacting harmonically trapped Bose-gas are considered. Using both semi-analytical mean-field approach and completely quantum numerical technique based on positive P-representation, it is demonstrated that the atomic delocalization due to the measurement back action is smaller for a strongly interacting gas. The numerically calculated second-order correlation functions demonstrate appearance of atomic bunching as a result of the center-of-mass measurement. Though being rather small the bunching is present also for strongly interacting gas which is in contrast with the case of unperturbed gas. The performed analysis allows to speculate that for relatively strong interactions the size of atomic cloud determined with a single snapshot measurement can become smaller than the ground-state cloud size.
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Submitted 3 September, 2011; v1 submitted 3 September, 2010;
originally announced September 2010.
