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Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse
Authors:
Dmitry S Ivanov,
Tatiana E Itina
Abstract:
Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-in…
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Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-induced phase transitions in silicon (Si) using a hybrid atomistic-continuum model. The model combines the strengths of Molecular Dynamics (MD) simulations for atomisticscale descriptions of non-equilibrium phase transitions with a continuum approach to account for laser-generated free carriers. This framework captures the generation and diffusion of electronhole pairs, thermal diffusion, and electron-phonon coupling during laser energy deposition. We apply the model to determine the melting depth as a function of fluence for a 100 fs laser pulse at 800 nm. The results show that the stand-alone continuum approach underestimates the melting threshold compared to the hybrid atomistic-continuum model, which incorporates the detailed kinetics of melting. Additionally, we explore the effect of crystal orientation on melting dynamics. Lastly, the MD model is used to identify the conditions leading to the amorphization of the Si surface. These findings provide valuable insights into experimental observations of Si surface structuring induced by ultrashort laser pulses.
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Submitted 15 November, 2024;
originally announced November 2024.
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Plasmonic nature of periodic surface structures following single laser pulse irradiation
Authors:
P. N. Terekhin,
J. Oltmanns,
A. Blumenstein,
D. S. Ivanov,
F. Kleinwort,
M. E. Garcia,
B. Rethfeld,
J. Ihlemann,
P. Simon
Abstract:
Understanding the mechanisms and controlling the possibilities of surface nanostructuring is of crucial interest from fundamental and practical perspectives. Here we report a direct experimental observation of laser-induced periodic surface structures (LIPSS) formed near a predesigned gold step edge following single-pulse femtosecond laser irradiation. A hybrid atomistic-continuum model fully supp…
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Understanding the mechanisms and controlling the possibilities of surface nanostructuring is of crucial interest from fundamental and practical perspectives. Here we report a direct experimental observation of laser-induced periodic surface structures (LIPSS) formed near a predesigned gold step edge following single-pulse femtosecond laser irradiation. A hybrid atomistic-continuum model fully supports experimental observations. We identify two key components of single-pulse LIPSS formation: excitation of surface plasmon polaritons and material reorganization. Our results lay the foundation towards simple and efficient single laser pulse micromachining.
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Submitted 18 May, 2021;
originally announced May 2021.
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Nondestructive femtosecond laser lithography of Ni nanocavities by controlled thermo-mechanical spallation at the nanoscale
Authors:
V. V. Temnov,
A. Alekhin,
A. Samokhvalov,
D. S. Ivanov,
P. Vavassori,
V. P. Veiko
Abstract:
We present a new approach to femtosecond direct laser writing lithography to pattern nanocavities in ferromagnetic thin films. To demonstrate the concept we irradiated 300~nm thin nickel films by single intense femtosecond laser pulses through the glass substrate and created complex surface landscapes at the nickel-air interface. Using a fluence above the ablation threshold the process is destruct…
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We present a new approach to femtosecond direct laser writing lithography to pattern nanocavities in ferromagnetic thin films. To demonstrate the concept we irradiated 300~nm thin nickel films by single intense femtosecond laser pulses through the glass substrate and created complex surface landscapes at the nickel-air interface. Using a fluence above the ablation threshold the process is destructive and irradiation leads to the formation of 200~nm thin flakes of nickel around the ablation crater as seen by electron microscopy. By progressively lowering the peak laser fluence, slightly below the ablation threshold the formation of closed spallation cavities is demonstrated by interferometric microscopy. Systematic studies by electron and optical interferometric microscopies enabled us to gain an understanding of the thermo-mechanical mechanism leading to spallation at the solid-molten interface, a conclusion supported by molecular dynamics simulations. We achieved a control of the spallation process that enabled the fabrication of closed spallation nanocavities and their periodic arrangements. Due to their topology closed magnetic nanocavities can support unique couplings of multiple excitations (magnetic, optical, acoustic, spintronic). Thereby, they offer a unique physics playground, before unavailable, for magnetism, magneto-photonic and magneto-acoustic applications.
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Submitted 20 June, 2020;
originally announced June 2020.
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Influence of surface plasmon polaritons on laser energy absorption and structuring of surfaces
Authors:
P. N. Terekhin,
O. Benhayoun,
S. T. Weber,
D. S. Ivanov,
M. E. Garcia,
B. Rethfeld
Abstract:
The accurate calculation of laser energy absorption during femto- or picosecond laser pulse experiments is very important for the description of the formation of periodic surface structures. On a rough material surface, a crack or a step edge, ultrashort laser pulses can excite surface plasmon polaritons (SPP), i.e. surface plasmons coupled to a laser-electromagnetic wave. The interference of such…
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The accurate calculation of laser energy absorption during femto- or picosecond laser pulse experiments is very important for the description of the formation of periodic surface structures. On a rough material surface, a crack or a step edge, ultrashort laser pulses can excite surface plasmon polaritons (SPP), i.e. surface plasmons coupled to a laser-electromagnetic wave. The interference of such plasmon wave and the incoming pulse leads to a periodic modulation of the deposited laser energy on the surface of the sample. In the present work, within the frames of a Two Temperature Model we propose the analytical form of the source term, which takes into account SPP excited at a step edge of a dielectric-metal interface upon irradiation of an ultrashort laser pulse at normal incidence. The influence of the laser pulse parameters on energy absorption is quantified for the example of gold. This result can be used for nanophotonic applications and for the theoretical investigation of the evolution of electronic and lattice temperatures and, therefore, of the formation of surfaces with predestined properties under controlled conditions.
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Submitted 2 September, 2019;
originally announced September 2019.
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Wavelength-dependent reflectivity changes on gold at elevated electronic temperatures
Authors:
A. Blumenstein,
E. S. Zijlstra,
D. S. Ivanov,
S. T. Weber,
T. Zier,
F. Kleinwort,
B. Rethfeld,
J. Ihlemann,
P. Simon,
M. E. Garcia
Abstract:
Upon the excitation by an ultrashort laser pulse the conditions in a material can drastically change, altering its optical properties and therefore the relative amount of absorbed energy, a quan- tity relevant for determining the damage threshold and for developing a detailed simulation of a structuring process. The subject of interest in this work is the d-band metal gold which has an absorption…
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Upon the excitation by an ultrashort laser pulse the conditions in a material can drastically change, altering its optical properties and therefore the relative amount of absorbed energy, a quan- tity relevant for determining the damage threshold and for developing a detailed simulation of a structuring process. The subject of interest in this work is the d-band metal gold which has an absorption edge marking the transition of free valence electrons and an absorbing deep d-band with bound electrons. Reflectivity changes are observed in experiment over a broad spectral range at ablation conditions. To understand the involved processes the laser excitation is modeled by a com- bination of first principle calculations with a two-temperature model. The description is kept most general and applied to realistically simulate the transfer of the absorbed energy of a Gaussian laser pulse into the electronic system at every point in space at every instance of time. An electronic temperature-dependent reflectivity map is calculated, describing the out of equilibrium reflectivity during laser excitation for photon energies from 0.9 - 6.4 eV, including inter- and intra-band transi- tions and a temperature-dependent damping factor. The main mechanisms are identified explaining the electronic temperature-dependent change in reflectivity: broadening of the edge of the occu- pied/unoccupied states around the chemical potential $μ$, also leading to a shift of the $μ$ and an increase of the collision rate of free s/p-band electrons with bound d-band holes.
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Submitted 31 January, 2018;
originally announced February 2018.
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Atomistic-continuum modeling of short laser pulse melting of Si targets
Authors:
V. P. Lipp,
B. Rethfeld,
M. E. Garcia,
D. S. Ivanov
Abstract:
We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction…
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We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction due to photo-excited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of free standing Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart of classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to negative volume of melting of modeled Si material, -7.5%, the material contracts upon the phase transition, relaxes the compressive stresses and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. On the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with fcc crystal structure.
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Submitted 16 November, 2014;
originally announced November 2014.
