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Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers
Authors:
Arkka Bhattacharyya,
Carl Peterson,
Takeki Itoh,
Saurav Roy,
Jacqueline Cooke,
Steve Rebollo,
Praneeth Ranga,
Berardi Sensale-Rodriguez,
Sriram Krishnamoorthy
Abstract:
We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010)…
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We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010) Ga$_2$O$_3$ Fe-doped substrate cleaning uses solvent cleaning followed by an additional HF (49% in water) treatment for 30 mins before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer-substrate interface that originates from the substrate polishing process or contamination from the ambient. SIMS analysis shows the Si peak atomic density at the substrate interface is several times lower than the Fe atomic density in the substrate - indicating full compensation. The elimination of the parasitic electron channel at the epi-substrate interface was also verified by electrical (capacitance-voltage profiling) measurements. In the LT-grown buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp with a decay rate of $\sim$ 9 nm$/$dec. These channels show record high electron mobility in the range of 196 - 85 cm$^2$/Vs in unintentionally doped and Si-doped films in the doping range of 2$\times$10$^{16}$ to 1$\times$10$^{20}$ cm$^{-3}$. Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT-buffers. Record high electron Hall mobility of 110 cm$^2$/Vs was measured for sheet charge density of 9.2$\times$10$^{12}$ cm$^{-2}$. This substrate cleaning combined with the LT-buffer scheme shows the potential of designing Si-doped $β$-Ga$_2$O$_3$ channels with exceptional transport properties for high performance gallium oxide-based electron devices.
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Submitted 2 February, 2023; v1 submitted 5 December, 2022;
originally announced December 2022.
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Anti-crossing properties of strong coupling system of silver nanoparticle dimers coated with thin dye molecular films analyzed by classical electromagnetism
Authors:
Tamitake Itoh,
Yuko S. Yamamoto,
Takayuki Okamoto
Abstract:
The evidence of strong coupling between plasmons and molecular excitons for plasmonic nanoparticle (NP) dimers exhibiting ultra-sensitive surface enhanced resonant Raman scattering is the observation of anti-crossing in the coupled resonance. However, it is not easy to experimentally tune plasmon resonance of such dimers for the observation. In this work, we theoretically investigate the anti-cros…
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The evidence of strong coupling between plasmons and molecular excitons for plasmonic nanoparticle (NP) dimers exhibiting ultra-sensitive surface enhanced resonant Raman scattering is the observation of anti-crossing in the coupled resonance. However, it is not easy to experimentally tune plasmon resonance of such dimers for the observation. In this work, we theoretically investigate the anti-crossing properties of the dimers coated by the thin dye films with thicknesses greater than 0.1 nm and gap distances larger than 1.2 nm according to the principles of classical electromagnetism. The plasmon resonance spectra of these dimers are strongly affected by their coupling with the exciton resonance of dye molecules. A comparison of the film thickness dependences of dimer spectral changes with those of silver ellipsoidal NPs indicates that the dipole plasmons localized in the dimer gap are coupled with molecular excitons of the film much stronger than the dipole plasmons of ellipsoidal NPs. Furthermore, the anti-crossing of coupled resonances is investigated while tuning plasmon resonance by changing the morphology and refractive index of the surrounding medium. The spectral changes observed for ellipsoidal NPs clearly exhibit anti-crossing properties; however, the anti-crossing behavior of dimers is more complex due to the strong coupling of dipoles and higher order plasmons with multiple molecular excitons. We find that the anti-crossing for dimers is clearly confirmed by the refractive index dependence of coupled resonance.
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Submitted 19 November, 2019;
originally announced November 2019.
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New Electron-Doped Superconducting Cuprate Li_x_Sr_2_CuO_2_Br_2_
Authors:
Tetsuya Kajita,
Masatsune Kato,
Takashi Suzuki,
Takashi Itoh,
Takashi Noji,
Yoji Koike
Abstract:
A new electron-doped superconductor Li_x_Sr_2_CuO_2_Br_2_ with x = 0.15 has successfully been synthesized by an electrochemical Li-intercalation technique. The magnetic susceptibility shows superconductivity of bulk with the superconducting transition temperature Tc = 8 K. This compound is the first electron-doped superconducting cuprate with the K_2_NiF_4_ structure.
A new electron-doped superconductor Li_x_Sr_2_CuO_2_Br_2_ with x = 0.15 has successfully been synthesized by an electrochemical Li-intercalation technique. The magnetic susceptibility shows superconductivity of bulk with the superconducting transition temperature Tc = 8 K. This compound is the first electron-doped superconducting cuprate with the K_2_NiF_4_ structure.
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Submitted 6 October, 2004;
originally announced October 2004.
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Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots
Authors:
K. Edamatsu,
C. Watatani,
T. Itoh,
S. Shimomura,
S. Hiyamizu
Abstract:
We have investigated micro-photoluminescence ($μ$-PL) and excitation ($μ$-PLE) spectra of a single GaAs/AlGaAs quantum dot grown on a GaAs (411)A surface. We observed sharp resonant lines in both $μ$-PL and $μ$-PLE spectra, corresponding to the discrete energy levels of the dot. When the sample was excited at one of the resonant lines, resonant luminescence lines appear not only in Stokes side b…
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We have investigated micro-photoluminescence ($μ$-PL) and excitation ($μ$-PLE) spectra of a single GaAs/AlGaAs quantum dot grown on a GaAs (411)A surface. We observed sharp resonant lines in both $μ$-PL and $μ$-PLE spectra, corresponding to the discrete energy levels of the dot. When the sample was excited at one of the resonant lines, resonant luminescence lines appear not only in Stokes side but also in anti-Stokes side. We discuss the possible origins of the anomalus anti-Stokes luminescence.
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Submitted 2 September, 2001;
originally announced September 2001.
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Higher Derivative CP(N) Model and Quantization of the Induced Chern-Simons Term
Authors:
Taichi Itoh,
Phillial Oh
Abstract:
We consider higher derivative CP(N) model in 2+1 dimensions with the Wess-Zumino-Witten term and the topological current density squared term. We quantize the theory by using the auxiliary gauge field formulation in the path integral method and prove that the extended model remains renormalizable in the large N limit. We find that the Maxwell-Chern-Simons theory is dynamically induced in the lar…
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We consider higher derivative CP(N) model in 2+1 dimensions with the Wess-Zumino-Witten term and the topological current density squared term. We quantize the theory by using the auxiliary gauge field formulation in the path integral method and prove that the extended model remains renormalizable in the large N limit. We find that the Maxwell-Chern-Simons theory is dynamically induced in the large N effective action at a nontrivial UV fixed point. The quantization of the Chern-Simons term is also discussed.
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Submitted 30 October, 2000; v1 submitted 21 June, 2000;
originally announced June 2000.
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Low thermal conductivity of the layered oxide (Na,Ca)Co_2O_4: Another example of a phonon glass and an electron crystal
Authors:
K. Takahata,
Y. Iguchi,
D. Tanaka,
T. Itoh,
I. Terasaki
Abstract:
The thermal conductivity of polycrystalline samples of (Na,Ca)Co_2O_4 is found to be unusually low, 20 mW/cmK at 280 K. On the assumption of the Wiedemann-Franz law, the lattice thermal conductivity is estimated to be 18 mW/cmK at 280 K, and it does not change appreciably with the substitution of Ca for Na. A quantitative analysis has revealed that the phonon mean free path is comparable with th…
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The thermal conductivity of polycrystalline samples of (Na,Ca)Co_2O_4 is found to be unusually low, 20 mW/cmK at 280 K. On the assumption of the Wiedemann-Franz law, the lattice thermal conductivity is estimated to be 18 mW/cmK at 280 K, and it does not change appreciably with the substitution of Ca for Na. A quantitative analysis has revealed that the phonon mean free path is comparable with the lattice parameters, where the point-defect scattering plays an important role. Electronically the same samples show a metallic conduction down to 4.2 K, which strongly suggests that NaCo_2O_4 exhibits a glass-like poor thermal conduction together with a metal-like good electrical conduction. The present study further suggests that a strongly correlated system with layered structure can act as a material of a phonon glass and an electron crystal.
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Submitted 6 March, 2000;
originally announced March 2000.
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Transport Properties in (Na,Ca)Co_2O_4 Ceramics
Authors:
T. Itoh,
T. Kawata,
T. Kitajima,
I. Terasaki
Abstract:
The resistivity and thermopower of polycrystalline (Na,Ca)Co_2O_4 were measured and analyzed. Both the quantities increase with x, suggesting that the carrier density is decreased by the substitutions of Ca^{2+} for Na^{+}. Considering that the temperature dependence of the resistivity show a characteristic change with x, the conduction mechanism is unlikely to come from a simple electron-phonon…
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The resistivity and thermopower of polycrystalline (Na,Ca)Co_2O_4 were measured and analyzed. Both the quantities increase with x, suggesting that the carrier density is decreased by the substitutions of Ca^{2+} for Na^{+}. Considering that the temperature dependence of the resistivity show a characteristic change with x, the conduction mechanism is unlikely to come from a simple electron-phonon scattering. As a reference for NaCo_2O_4, single crystals of a two-dimensional Co oxide (Bi,Pb)_2M_3Co_2O_9 (M=Sr and Ba) were studied. The Pb substitution decreases the resistivity, leaving the thermopower nearly intact.
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Submitted 3 August, 1999;
originally announced August 1999.
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Na-site substitution effects of the thermoelectric properties of NaCo_2O_4
Authors:
T. Kawata,
Y. Iguchi,
T. Itoh,
K. Takahata,
I. Terasaki
Abstract:
The resistivity and thermopower of Na$_{1+x}$Co$_2$O$_4$ and Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$ are measured and analyzed. In Na$_{1+x}$Co$_2$O$_4$, whereas the resistivity increases with $x$, the thermopower is nearly independent of $x$. This suggests that the excess Na is unlikely to supply carriers, and decreases effective conduction paths in the sample. In Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$, the resis…
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The resistivity and thermopower of Na$_{1+x}$Co$_2$O$_4$ and Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$ are measured and analyzed. In Na$_{1+x}$Co$_2$O$_4$, whereas the resistivity increases with $x$, the thermopower is nearly independent of $x$. This suggests that the excess Na is unlikely to supply carriers, and decreases effective conduction paths in the sample. In Na$_{1.1-x}$Ca$_x$Co$_2$O$_4$, the resistivity and the thermopower increase with $x$, and the Ca$^{2+}$ substitution for Na$^+$ reduces the majority carriers in NaCo$_2$O$_4$. This means that they are holes, which is consistent with the positive sign of the thermopower. Strong correlation in this compound is evidenced by the peculiar temperature dependence of the resistivity.
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Submitted 12 July, 1999;
originally announced July 1999.
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Magnetization and dynamically induced finite densities in three-dimensional Chern-Simons QED
Authors:
Taichi Itoh,
Hiroshi Kato
Abstract:
In (2+1)-dimensional QED with a Chern-Simons term, we show that spontaneous magnetization occurs in the context of finite density vacua, which are the lowest Landau levels fully or half occupied by fermions. Charge condensation is shown to appear so as to complement the fermion anti-fermion condensate, which breaks the flavor U(2N) symmetry and causes fermion mass generation. The solutions to th…
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In (2+1)-dimensional QED with a Chern-Simons term, we show that spontaneous magnetization occurs in the context of finite density vacua, which are the lowest Landau levels fully or half occupied by fermions. Charge condensation is shown to appear so as to complement the fermion anti-fermion condensate, which breaks the flavor U(2N) symmetry and causes fermion mass generation. The solutions to the Schwinger-Dyson gap equation show that the fermion self-energy contributes to the induction of a finite fermion density and/or fermion mass. The magnetization can be supported by charge condensation for theories with the Chern-Simons coefficient $κ=N e^2/2 π$, and $κ=N e^2/4 π$, under the Gauss law constraint. For $κ=N e^2/4 π$, both the magnetic field and the fermion mass are simultaneously generated in the half-filled ground state, which breaks the U(2N) symmetry as well as the Lorentz symmetry.
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Submitted 2 April, 1999; v1 submitted 4 December, 1998;
originally announced December 1998.
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Dynamical Generation of Fermion Mass and Magnetic Field in Three-Dimensional QED with Chern-Simons Term
Authors:
Taichi Itoh,
Hiroshi Kato
Abstract:
We study dynamical symmetry breaking in three-dimensional QED with a Chern-Simons (CS) term, considering the screening effect of $N$ flavor fermions. We find a new phase of the vacuum, in which both the fermion mass and a magnetic field are dynamically generated, when the coefficient of the CS term $κ$ equals $N e^2/4 π$. The resultant vacuum becomes the finite-density state half-filled by fermi…
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We study dynamical symmetry breaking in three-dimensional QED with a Chern-Simons (CS) term, considering the screening effect of $N$ flavor fermions. We find a new phase of the vacuum, in which both the fermion mass and a magnetic field are dynamically generated, when the coefficient of the CS term $κ$ equals $N e^2/4 π$. The resultant vacuum becomes the finite-density state half-filled by fermions. For $κ=N e^2/2 π$, we find the fermion remains massless and only the magnetic field is induced. For $κ=0$, spontaneous magnetization does not occur and should be regarded as an external field.
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Submitted 8 June, 1998; v1 submitted 13 February, 1998;
originally announced February 1998.
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Charge Condensation in QED$_3$ with a Chern-Simons Term
Authors:
Taichi Itoh,
Toshiro Sato
Abstract:
Introducing a chemical potential in the functional method, we construct the effective action of QED$_3$ with a Chern-Simons term. We examine a possibility that charge condensation $\langleψ^\daggerψ\rangle$ remains nonzero at the limit of the zero chemical potential. If it happens, spontaneous magnetization occurs due to the Gauss' law constraint which connects the charge condensation to the bac…
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Introducing a chemical potential in the functional method, we construct the effective action of QED$_3$ with a Chern-Simons term. We examine a possibility that charge condensation $\langleψ^\daggerψ\rangle$ remains nonzero at the limit of the zero chemical potential. If it happens, spontaneous magnetization occurs due to the Gauss' law constraint which connects the charge condensation to the background magnetic field. It is found that the stable vacuum with nonzero charge condensation is realized only when fermion masses are sent to zero, keeping it lower than the chemical potential. This result suggests that the spontaneous magnetization is closely related to the fermion mass.
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Submitted 23 August, 1995;
originally announced August 1995.
