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Spectroscopic Evaluation of Charge-transfer Doping and Strain in Graphene/MoS2 Heterostructures
Authors:
Rahul Rao,
Ahmad E. Islam,
Simranjeet Singh,
Rajiv Berry,
Roland K Kawakami,
Benji Maruyama,
Jyoti Katoch
Abstract:
It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer doping across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructure…
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It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer doping across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructures prepared by mechanical exfoliation and layer-by-layer transfer. By using correlation analysis between the Raman modes of graphene and MoS2 we show that both layers are subjected to compressive strain and charge transfer doping following mechanical exfoliation and thermal annealing. Furthermore, we show that both strain and carrier concentration can be modulated in the heterostructures with additional thermal annealing. Our study highlights the importance of considering both mechanical and electronic coupling when characterizing the interface in van der Waals heterostructures, and demonstrates a method to tune their electromechanical properties.
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Submitted 10 May, 2019; v1 submitted 2 May, 2019;
originally announced May 2019.
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Extent of Variation Resilience in Strained CMOS: From Transistors to Digital Circuits
Authors:
Ahmad Ehteshamul Islam,
Charles Augustine,
Kaushik Roy,
Muhammad Ashraful Alam
Abstract:
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different circuit level optimization schemes to handle these variations. In this paper, we demonstrate how an increase in the negative steepness of the universal mobility…
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Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different circuit level optimization schemes to handle these variations. In this paper, we demonstrate how an increase in the negative steepness of the universal mobility relationship improves both the process-related (e.g., oxide thickness fluctuation, gate work-function fluctuation), as well as stress-induced or reliability-related (e.g., Bias Temperature Instability or BTI) parametric variation in CMOS technology. Therefore, we calibrate the universal mobility parameters to reflect the measured variation of negative steepness in uniaxially strained CMOS transistor. This allows us to study the extent of (process-related and stress-induced parametric) variation resilience in uniaxial strain technology by increasing the negative steepness of the mobility characteristics. Thus, we show that variability analysis in strained CMOS technology must consider the presence of self-compensation between mobility variation and threshold voltage variation, which leads to considerable amount of variation resilience. Finally, we use detailed circuit simulation to stress the importance of accurate mobility variation modeling in SPICE analysis and explain why the variability concerns in strained technology may be less severe than those in unstrained technology.
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Submitted 22 February, 2017;
originally announced February 2017.
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Markov-Chain Formulation of Reaction-Diffusion Model and its Implications for Statistical Distribution of Interface Defects in Nanoscale Transistors
Authors:
Ahmad Ehteshamul Islam,
Muhammad Ashraful Alam
Abstract:
Continued scaling of nanoscale transistors leads to broad device-to-device fluctuation of parameters due to random dopant effects, channel length variation, interface trap generation, etc. In this paper, we obtain the statistics of negative bias temperature instability (NBTI)-induced interface defect generation in ultra-scaled MOSFET by Markov Chain Monte-Carlo (MCMC) solution of Reaction-Diffusio…
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Continued scaling of nanoscale transistors leads to broad device-to-device fluctuation of parameters due to random dopant effects, channel length variation, interface trap generation, etc. In this paper, we obtain the statistics of negative bias temperature instability (NBTI)-induced interface defect generation in ultra-scaled MOSFET by Markov Chain Monte-Carlo (MCMC) solution of Reaction-Diffusion (R-D) model. Our results show that the interface defect generation at a particular stress time, i.e., NIT}@tSTS in small transistors should follow a skew-normal distribution and that the generation and annealing of interface defects are strongly correlated. Next, we use a random percolative network to demonstrate (which is also consistent with previously published results in literature based on separate techniques) that the distribution of threshold voltage shift for single interface defect, i.e., ΔVT@NIT is exponential, with finite number of transistors having zero ΔVT. Finally, we show that the statistics of ΔVT@tSTS - based on the convolution of NIT@tSTS and ΔVT@NIT - is broadly consistent with the available experimental data in literature.
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Submitted 26 September, 2011; v1 submitted 14 November, 2010;
originally announced November 2010.
