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Bismuth iron garnet: ab initio study of electronic properties
Authors:
Federico Iori,
Adrien Teurtrie,
Laura Bocher,
Elena Popova,
Niels Keller,
Odile Stéphan,
Alexandre Gloter
Abstract:
Bismuth iron garnet (BIG), i.e. Bi3Fe5O12, is a strong ferrimagnet that also possess outstanding magneto-optical properties such as the largest known Faraday rotation. These properties are related with the distribution of magnetic moments on octahedral and tetrahedral sites, the presence of spin gaps in the density of state and a strong spin-orbit coupling. In this work, first-principles ab initio…
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Bismuth iron garnet (BIG), i.e. Bi3Fe5O12, is a strong ferrimagnet that also possess outstanding magneto-optical properties such as the largest known Faraday rotation. These properties are related with the distribution of magnetic moments on octahedral and tetrahedral sites, the presence of spin gaps in the density of state and a strong spin-orbit coupling. In this work, first-principles ab initio calculations are performed to study the structural, electronic and magnetic properties of BIG using Density Functional Theory with Hubbard+U (DFT+U) correction including spin-orbit coupling and HSE06 hybrid functional. We found that the presence of spin gaps in the electronic structure results from the interplay between exchange and correlation effects and the crystal field strengths for tetrahedral and octahedral iron sublattices. The DFT+U treatment tends to close the spin-gaps for larger U due to over-localization effects, notably in the octahedral site. On the other hand, the hybrid functional confirms the occurrences of three spin gaps in the iron states of the conduction band as expected from optical measurements. A strong exchange splitting at the top of the valence bands associated with a lone-pair type mixture of O p and Bi s,p states is also obtained. Similar exchange splitting was not previously observed for other iron based garnets, such as for yttrium iron garnet. It follows that hole doping, as obtained by Ca substitution at Bi sites, results in a full spin polarized density at the Fermi energy. This work helps to shed more light on the theoretical comprehension of the properties of BIG and opens the route towards the use of advanced Many Body calculations to predict the magneto-optical coupling effects in BIG in a direct comparison with the experimental measurements.
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Submitted 9 January, 2020;
originally announced January 2020.
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The role of non-local exchange in the electronic structure of correlated oxides
Authors:
Federico Iori,
Matteo Gatti,
Angel Rubio
Abstract:
We present a systematic study of the electronic structure of several prototypical correlated transition-metal oxides: VO2, V2O3, Ti2O3, LaTiO3, and YTiO3. In all these materials, in the low-temperature insulating phases the local and semilocal density approximations (LDA and GGA) of density-functional theory yield a metallic Kohn-Sham band structure. Here we show that, without invoking strong-corr…
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We present a systematic study of the electronic structure of several prototypical correlated transition-metal oxides: VO2, V2O3, Ti2O3, LaTiO3, and YTiO3. In all these materials, in the low-temperature insulating phases the local and semilocal density approximations (LDA and GGA) of density-functional theory yield a metallic Kohn-Sham band structure. Here we show that, without invoking strong-correlation effects, the role of non-local exchange is essential to cure the LDA/GGA delocalization error and provide a band-structure description of the electronic properties in qualitative agreement with the experimental photoemission results. To this end, we make use of hybrid functionals that mix a portion of non-local Fock exchange with the local LDA exchange-correlation potential. Finally, we discuss the advantages and the shortcomings of using hybrid functionals for correlated transition-metal oxides.
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Submitted 16 January, 2012;
originally announced January 2012.
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Valence band electronic structure of V2O3: identification of V and O bands
Authors:
E. Papalazarou,
Matteo Gatti,
M. Marsi,
V. Brouet,
F. Iori,
Lucia Reining,
E. Annese,
I. Vobornik,
F. Offi,
A. Fondacaro,
S. Huotari,
P. Lacovig,
O. Tjernberg,
N. B. Brookes,
M. Sacchi,
P. Metcalf,
G. Panaccione
Abstract:
We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies,…
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We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s at about 8 eV binding energy.
From this comparative analysis we can conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation of the O 2p and V 3d yield, thus confirming that bulk sensitivity is an essential requirement for the detection of this coherent low energy excitation.
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Submitted 25 March, 2009;
originally announced March 2009.
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Engineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus
Authors:
Federico Iori,
Elena Degoli,
Rita Magri,
Ivan Marri,
G. Cantele,
D. Ninno,
F. Trani,
O. Pulci,
Stefano Ossicini
Abstract:
We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities,…
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We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities, either boron or phosphorous (doping) or both (codoping), located at different substitutional sites of silicon nanocrystals with size ranging from 1.1 nm to 1.8 nm in diameter. We have found that the codoped nanocrystals have the lowest impurity formation energies when the two impurities occupy nearest neighbor sites near the surface. In addition, such systems present band-edge states localized on the impurities giving rise to a red-shift of the absorption thresholds with respect to that of undoped nanocrystals. Our detailed theoretical analysis shows that the creation of an electron-hole pair due to light absorption determines a geometry distortion that in turn results in a Stokes shift between adsorption and emission spectra. In order to give a deeper insight in this effect, in one case we have calculated the absorption and emission spectra going beyond the single-particle approach showing the important role played by many-body effects. The entire set of results we have collected in this work give a strong indication that with the doping it is possible to tune the optical properties of silicon nanocrystals.
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Submitted 26 July, 2007;
originally announced July 2007.
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Excitons in Silicon Nanocrystalites: The Nature of Luminescence
Authors:
Eleonora Luppi,
Federico Iori,
Rita Magri,
Olivia Pulci,
Stefano Ossicini,
Elena Degoli,
Valerio Olevano
Abstract:
The absorption and emission spectra of silicon nanocrystals up to 1 nm diameter including geometry optimization and the many-body effects induced by the creation of an electron-hole pair have been calculated within a first-principles framework. Starting from hydrogenated silicon clusters of different size, different Si/O bonding at the cluster surface have been considered. We found that the pres…
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The absorption and emission spectra of silicon nanocrystals up to 1 nm diameter including geometry optimization and the many-body effects induced by the creation of an electron-hole pair have been calculated within a first-principles framework. Starting from hydrogenated silicon clusters of different size, different Si/O bonding at the cluster surface have been considered. We found that the presence of a Si-O-Si bridge bond originates significative excitonic luminescence features in the visible range that are in fair agreement with the experimental outcomes.
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Submitted 20 July, 2007;
originally announced July 2007.
