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Structure and spatial distribution of Ge nanocrystals subjected to fast neutron irradiation
Authors:
S. Levy,
I. Shlimak,
D. H. Dressler,
J. Grinblat,
Y. Gofer,
T. Lu,
A. N. Ionov
Abstract:
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS), High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). The irradiation of NC-Ge samples by a high dose of fast neutro…
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The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS), High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). The irradiation of NC-Ge samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 800 deg. C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of NC-Ge changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.
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Submitted 17 November, 2010;
originally announced November 2010.
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Electronic correlation effects and the Coulomb gap at finite temperature
Authors:
B. Sandow,
K. Gloos,
R. Rentzsch,
A. N. Ionov,
W. Schirmacher
Abstract:
We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature r…
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We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature range above 1 K the Coulomb gap is filled by thermal excitations. This behavior is reflected in the temperature dependence of the variable-range hopping resitivity measured on the same samples: Up to a few degrees Kelvin the Efros-Shkovskii ln$R \propto T^{-1/2}$ law is obeyed, whereas at higher temperatures deviations from this law are observed, indicating a cross-over to Mott's ln$R \propto T^{-1/4}$ law. The mechanism of this cross-over is different from that considered previously in the literature.
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Submitted 29 June, 2000;
originally announced June 2000.
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Josephson Effect in Metal - Polyimide - Metal Sandwich Structures
Authors:
A. N. Ionov,
V. A. Zakrevskii,
J. M. Lazebnik,
R. Rentzsch,
V. M. Svetlichny
Abstract:
We have observed that thin films of amorphous polyimide placed between two metallic electrodes become highly conducting with no applied electric field, and at a low pressure which was necessary only to achieve reliable electrical contact with the metallic electrodes. We observed for the first time a Josephson effect in a sandwich of a superconductor - polyimide film - superconductor.
We have observed that thin films of amorphous polyimide placed between two metallic electrodes become highly conducting with no applied electric field, and at a low pressure which was necessary only to achieve reliable electrical contact with the metallic electrodes. We observed for the first time a Josephson effect in a sandwich of a superconductor - polyimide film - superconductor.
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Submitted 15 May, 2001; v1 submitted 1 June, 2000;
originally announced June 2000.
