Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
Authors:
V. L. Korenev,
I. V. Kalitukha,
I. A. Akimov,
V. F. Sapega,
E. A. Zhukov,
E. Kirstein,
O. S. Ken,
D. Kudlacik,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
N. D. Ilyinskaya,
N. M. Lebedeva,
T. A. Komissarova,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive c…
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Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.
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Submitted 23 December, 2018;
originally announced December 2018.
Contactless Measurement of AC Conductance in Quantum Hall Structures
Authors:
I. L. Drichko,
A. M. Diakonov,
V. A. Malysh,
I. Yu. Smirnov,
Y. M. Galperin,
N. D. Ilyinskaya,
A. A. Usikova,
M. Kummer,
H. von Känel
Abstract:
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in…
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We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized $p$-SiGe/Ge/SiGe heterostructure.
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Submitted 10 July, 2014;
originally announced July 2014.
