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Cryogenic-temperature Grain-to-grain Epitaxial Growth of High-quality Ultrathin CoFe Layer on MgO Tunnel Barrier for High-performance Magnetic Tunnel Junctions
Authors:
Tomohiro Ichinose,
Tatsuya Yamamoto,
Takayuki Nozaki,
Kay Yakushiji,
Shingo Tamaru,
Shinji Yuasa
Abstract:
One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate high-performance magnetic tunnel junctions (MTJs), which require the epitaxial growth of an ultrathin ferromagnetic electrode on a crystalline tunnel barrier using a mass-manufacturing-compatible process. In this study,…
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One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate high-performance magnetic tunnel junctions (MTJs), which require the epitaxial growth of an ultrathin ferromagnetic electrode on a crystalline tunnel barrier using a mass-manufacturing-compatible process. In this study, the grain-to-grain epitaxial growth of perpendicularly magnetized CoFe ultrathin films on polycrystalline MgO (001) was demonstrated using cryogenic-temperature sputtering on 300 mm Si wafers. Cryogenic-temperature sputtering at 100 K suppressed the island-like initial growth of CoFe on MgO without hampering epitaxy. Sub-nanometer-thick CoFe layers exhibited remarkable perpendicular magnetic anisotropy (PMA). An even larger PMA was obtained using an Fe-doped MgO (MgFeO) tunnel barrier owing to improved uniformity of the CoFe layer. A 0.8-nm-thick CoFe layer grown on MgFeO exhibited a magnetic damping constant as low as 0.008. The ultralow magnetic damping enables voltage-driven magnetization switching with a low write-error rate (WER) below 10^-6 at a pulse duration of 0.3 ns, and WER on the order of 10^-3 even for a relatively long pulse duration of 1.5 ns. These properties achieved using a mass-manufacturing deposition process can promote the development of VC-MRAM and other advanced spintronic devices based on MTJs.
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Submitted 9 April, 2025;
originally announced April 2025.
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Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers
Authors:
Tomohiro Ichinose,
Tatsuya Yamamoto,
Takayuki Nozaki,
Kay Yakushiji,
Shingo Tamaru,
Shinji Yuasa
Abstract:
We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendic…
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We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendicular magnetic anisotropy (PMA) energy density compared with a standard CoFeB/MgO multilayer. The PMA energy density was further enhanced by inserting an ultrathin MgO layer in between CoFeB and MgFeO layers. Ferromagnetic resonance measurement also revealed a remarkable reduction of magnetic damping in the CoFeB/MgFeO multilayers.
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Submitted 17 August, 2023;
originally announced August 2023.
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Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers
Authors:
Tomohiro Ichinose,
Tatsuya Yamamoto,
Takayuki Nozaki,
Kay Yakushiji,
Shingo Tamaru,
Makoto Konoto,
Shinji Yuasa
Abstract:
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpend…
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We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. Cryogenic-temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory.
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Submitted 12 January, 2023;
originally announced January 2023.
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Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction
Authors:
Kelvin Elphick,
Kenta Yoshida,
Tufan Roy,
Tomohiro Ichinose,
Kazuma Kunimatsu,
Tomoki Tsuchiya,
Masahito Tsujikawa,
Yasuyoshi Nagai,
Shigemi Mizukami,
Masafumi Shirai,
Atsufumi Hirohata
Abstract:
In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigat…
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In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigated the degree of crystallisation in MTJ consisting of CoxMn100-x/MgO/CoxMn100-x (x = 66, 75, 83 and 86) in relation to their TMR ratios. Cross-sectional high resolution transmission electron microscopy (HRTEM) reveals that almost consistent lattice constants of these layers for 66 < x < 83 with maintaining large TMR ratios of 229% at RT, confirming the soft nature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25 interfaces. For x = 86, on the other hand, the TMR ratio is found to be reduced to 142% at RT, which is partially attributed to the increased number of the dislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified in the MgO barrier. Ab-initio calculations confirm the crystalline deformation stability across a broad compositional range in CoMn, proving the advantage of a strain-free interface for much larger TMR ratios.
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Submitted 9 October, 2020;
originally announced October 2020.
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High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions
Authors:
Kazuma Kunimatsu,
Tufan Roy,
Jun Okabayashi,
Kelvin Elphick,
Tomoki Tsuchiya,
Tomohiro Ichinose,
Masahito Tsujikawa,
Atsufumi Hirohata,
Masafumi Shirai,
Shigemi Mizukami
Abstract:
Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the…
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Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the $x$ = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effect in MgO(001)-barrier MTJs with electrodes comprising those bcc films. The single phase bcc Co$_{1-x}$Mn$_x$(001) films were pseudomorphically grown on Cr(001) for 0.14 < $x$ < 0.50 with a sputtering technique. The magnetization was larger than that of pure Co for $x$ = 0.14-0.25 and deceased with further increasing $x$. This behavior mainly stemmed from the composition dependence of magnetic moment of Mn that exceeded 2 $μ_B$ at the maximum, unveiled by X-ray magnetic circular dichroism. Correspondingly, within the range of 0.25 < $x$ < 0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K) as $x$ increased. We discussed the relationship between the magnetism and high TMR ratio with different $x$ with the aid of the ab-initio band structure calculations.
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Submitted 8 October, 2020;
originally announced October 2020.
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Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy
Authors:
Tomoki Tsuchiya,
Tufan Roy,
Kelvin Elphick,
Jun Okabayashi,
Lakhan Bainsla,
Tomohiro Ichinose,
Kazuya Suzuki,
Masahito Tsujikawa,
Masafumi Shirai,
Atsufumi Hirohata,
Shigemi Mizukami
Abstract:
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show tha…
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The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.
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Submitted 10 May, 2019;
originally announced May 2019.
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Spatial Adiabatic Passage of Massive Quantum Particles
Authors:
Shintaro Taie,
Tomohiro Ichinose,
Hideki Ozawa,
Yoshiro Takahashi
Abstract:
By adiabatically manipulating tunneling amplitudes of cold atoms in a periodic potential with a multiple sublattice structure, we are able to coherently transfer atoms from a sublattice to another without populating the intermediate sublattice, which can be regarded as a spatial analogue of stimulated Raman adiabatic passage. A key is the existence of dark eigenstates forming a flat band in a Lieb…
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By adiabatically manipulating tunneling amplitudes of cold atoms in a periodic potential with a multiple sublattice structure, we are able to coherently transfer atoms from a sublattice to another without populating the intermediate sublattice, which can be regarded as a spatial analogue of stimulated Raman adiabatic passage. A key is the existence of dark eigenstates forming a flat band in a Lieb-type optical lattice. We also successfully observe a matter-wave analogue of Autler-Townes doublet using the same setup. This work shed light on a novel kind of coherent control of cold atoms in optical potentials.
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Submitted 3 August, 2017;
originally announced August 2017.
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Feshbach-Resonance-Enhanced Coherent Atom-Molecule Conversion with Ultra-Narrow Photoassociation Resonance
Authors:
Shintaro Taie,
Shunsuke Watanabe,
Tomohiro Ichinose,
Yoshiro Takahashi
Abstract:
We reveal the existence of high-density Feshbach resonances in the collision between the ground and metastable states of $^{171}$Yb and coherently produce the associated Feshbach molecules by photoassociation. The extremely small transition rate is overcome by the enhanced Franck-Condon factor of the weakly bound Feshbach molecule, allowing us to observe Rabi oscillations with long decay time betw…
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We reveal the existence of high-density Feshbach resonances in the collision between the ground and metastable states of $^{171}$Yb and coherently produce the associated Feshbach molecules by photoassociation. The extremely small transition rate is overcome by the enhanced Franck-Condon factor of the weakly bound Feshbach molecule, allowing us to observe Rabi oscillations with long decay time between an atom pair and a molecule in an optical lattice. We also perform the precision measurement of the binding energies, which characterizes the observed resonances. The ultra-narrow photoassociation will be a basis for practical implementation of optical Feshbach resonances.
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Submitted 6 September, 2015;
originally announced September 2015.
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Topological Thouless Pumping of Ultracold Fermions
Authors:
Shuta Nakajima,
Takafumi Tomita,
Shintaro Taie,
Tomohiro Ichinose,
Hideki Ozawa,
Lei Wang,
Matthias Troyer,
Yoshiro Takahashi
Abstract:
A gas of electrons in a one-dimensional periodic potential can be transported even in the absence of a voltage bias if the potential is modulated slowly and periodically in time. Remarkably, the transferred charge per cycle is only sensitive to the topology of the path in parameter space. Although this so-called Thouless charge pump has first been proposed more than thirty years ago, it has not ye…
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A gas of electrons in a one-dimensional periodic potential can be transported even in the absence of a voltage bias if the potential is modulated slowly and periodically in time. Remarkably, the transferred charge per cycle is only sensitive to the topology of the path in parameter space. Although this so-called Thouless charge pump has first been proposed more than thirty years ago, it has not yet been realized. Here we report the first demonstration of topological Thouless pumping using ultracold atoms in a dynamically controlled optical superlattice. We observe a shift of the atomic cloud as a result of pumping and extract the topological invariance of the pumping process from this shift. We demonstrate the topological nature of the Thouless pump by varying the topology of the pumping path and verify that the topological pump indeed works in the quantum region by varying speed and temperature.
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Submitted 22 June, 2020; v1 submitted 8 July, 2015;
originally announced July 2015.
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Coherent driving and freezing of bosonic matter wave in an optical Lieb lattice
Authors:
Shintaro Taie,
Hideki Ozawa,
Tomohiro Ichinose,
Takuei Nishio,
Shuta Nakajima,
Yoshiro Takahashi
Abstract:
While kinetic energy of a massive particle generally has quadratic dependence on its momentum, a flat, dispersionless energy band is realized in crystals with specific lattice structures. Such macroscopic degeneracy causes the emergence of localized eigenstates and has been a key concept in the context of itinerant ferromagnetism. Here we report the realization of a "Lieb lattice" configuration wi…
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While kinetic energy of a massive particle generally has quadratic dependence on its momentum, a flat, dispersionless energy band is realized in crystals with specific lattice structures. Such macroscopic degeneracy causes the emergence of localized eigenstates and has been a key concept in the context of itinerant ferromagnetism. Here we report the realization of a "Lieb lattice" configuration with an optical lattice, which has a flat energy band as the first excited state. Our optical lattice potential possesses various degrees of freedom about its manipulation, which enables coherent transfer of a Bose-Einstein condensate into the flat band. In addition to measuring lifetime of the flat band population for different tight-binding parameters, we investigate the inter-sublattice dynamics of the system by projecting the sublattice population onto the band population. This measurement clearly shows the formation of the localized state with the specific sublattice decoupled in the flat band, and even detects the presence of flat-band breaking perturbations, resulting in the delocalization. Our results will open up the possibilities of exploring physics of flat band with a highly controllable quantum system.
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Submitted 26 November, 2015; v1 submitted 1 June, 2015;
originally announced June 2015.
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Geometrically induced spectrum in curved leaky wires
Authors:
Pavel Exner,
Takashi Ichinose
Abstract:
We study measure perturbations of the Laplacian in $L^2(\R^2)$ supported by an infinite curve $Γ$ in the plane which is asymptotically straight in a suitable sense. We show that if $Γ$ is not a straight line, such a ``leaky quantum wire'' has at least one bound state below the threshold of the essential spectrum.
We study measure perturbations of the Laplacian in $L^2(\R^2)$ supported by an infinite curve $Γ$ in the plane which is asymptotically straight in a suitable sense. We show that if $Γ$ is not a straight line, such a ``leaky quantum wire'' has at least one bound state below the threshold of the essential spectrum.
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Submitted 10 November, 2000;
originally announced November 2000.
