Tunable optical emissions of Eu3+ ions enabled by pressure-driven phase transition in ZnO
Authors:
C. Ianhez-Pereira,
U. F. Kaneko,
A. D. Rodrigues,
I. S. S. de Oliveira,
M. P. F. de Godoy
Abstract:
Controlling the optical properties of rare-earth ions in wide-bandgap semiconductors remains a major challenge in the development of next-generation photonic materials. Here, we show that external hydrostatic pressure modulates the structural characteristics of ZnO thin films and, in turn, tunes the optical emission behavior of embedded Eu3+ ions. By combining in situ synchrotron X-ray diffraction…
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Controlling the optical properties of rare-earth ions in wide-bandgap semiconductors remains a major challenge in the development of next-generation photonic materials. Here, we show that external hydrostatic pressure modulates the structural characteristics of ZnO thin films and, in turn, tunes the optical emission behavior of embedded Eu3+ ions. By combining in situ synchrotron X-ray diffraction and photoluminescence spectroscopy under high-pressure conditions with first-principles calculations, we capture a pressure-induced phase transition from the hexagonal wurtzite to the cubic rocksalt structure near 10 GPa. This transformation is accompanied by complete quenching of the D0 - FJ Europium emissions near the transition threshold, followed by a partial recovery at higher pressures, likely associated with the emergence of structural disorder. Concurrently, the Stark components of the emission bands exhibit a redshift and significant broadening with increasing pressure, reflecting enhanced crystal field strength as interatomic distances decrease. Additional first-principles calculations support the observed pressure-induced shifts in the Eu-4f states and emphasize the influence of lattice symmetry on their electronic environment. These results show that hydrostatic pressure is an effective way to adjust the optical emissions of rare-earth ions by changing their symmetry and local environment, providing a basis for designing photonic devices and luminescent materials controlled by pressure.
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Submitted 14 August, 2025;
originally announced August 2025.
Evaluation of microscale crystallinity modification induced by laser writing on Mn3O4 thin films
Authors:
Camila Ianhez-Pereira,
Akhil Kuriakose,
Ariano De Giovanni Rodrigues,
Ana Luiza Costa Silva,
Ottavia Jedrkiewicz,
Monica Bollani,
Marcio Peron Franco de Godoy
Abstract:
Defining microstructures and managing local crystallinity allow the implementation of several functionalities in thin film technology. The use of ultrashort Bessel beams for bulk crystallinity modification has garnered considerable attention as a versatile technique for semiconductor materials, dielectrics, or metal oxide substrates. The aim of this work is the quantitative evaluation of the cryst…
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Defining microstructures and managing local crystallinity allow the implementation of several functionalities in thin film technology. The use of ultrashort Bessel beams for bulk crystallinity modification has garnered considerable attention as a versatile technique for semiconductor materials, dielectrics, or metal oxide substrates. The aim of this work is the quantitative evaluation of the crystalline changes induced by ultrafast laser micromachining on manganese oxide thin films using micro-Raman spectroscopy. Pulsed Bessel beams featured by a 1 micrometer-sized central core are used to define structures with high spatial precision. The dispersion relation of Mn3O4 optical phonons is determined by considering the conjunction between X-ray diffraction characterization and the phonon localization model. The asymmetries in Raman spectra indicate phonon localization and enable a quantitative tool to determine the crystallite size at micrometer resolution. The results indicate that laser-writing is effective in modifying the low-crystallinity films locally, increasing crystallite sizes from ~8 nm up to 12 nm, and thus highlighting an interesting approach to evaluate laser-induced structural modifications on metal oxide thin films.
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Submitted 27 November, 2023;
originally announced November 2023.
