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From Quantum Indistinguishability to Classical Distinguishability: Statistics and Measurement of Two-Particle Distributions
Authors:
Won-Young Hwang,
Kicheon Kang
Abstract:
We propose an experimental scheme to probe the quantum statistics of two identical particles. The transition between the quantum and classical statistics of two identical particles is described by the particles having identical multiple internal energy levels. We show that effective distinguishability emerges as the thermal energy increases with respect to the energy level spacing, and the mesosco…
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We propose an experimental scheme to probe the quantum statistics of two identical particles. The transition between the quantum and classical statistics of two identical particles is described by the particles having identical multiple internal energy levels. We show that effective distinguishability emerges as the thermal energy increases with respect to the energy level spacing, and the mesoscopic regime bridges quantum indistinguishability and classical distinguishability. A realistic experimental approach is proposed using a two-particle interferometer, where the particles reach statistical equilibrium before the two-particle distribution is measured. The unitarity of the scattering/separation process ensures the preservation of the equilibrium distribution and allows a direct measurement of the two-particle statistical distribution. Our results show the transition between quantum and classical behavior of the two-particle distribution, which can be directly probed by a realistic experiment.
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Submitted 18 May, 2025;
originally announced May 2025.
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Theoretical investigation of delafossite-Cu2ZnSnO4 as a promising photovoltaic absorber
Authors:
Seoung-Hun Kang,
Myeongjun Kang,
Sang Woon Hwang,
Sinchul Yeom,
Mina Yoon,
Jong Mok Ok,
Sangmoon Yoon
Abstract:
In the quest for efficient and cost-effective photovoltaic absorber materials beyond silicon, considerable attention has been directed toward exploring alternatives. One such material, zincblende-derived Cu2ZnSnS4 (CZTS), has shown promise due to its ideal band-gap size and high absorption coefficient. However, challenges such as structural defects and secondary phase formation have hindered its d…
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In the quest for efficient and cost-effective photovoltaic absorber materials beyond silicon, considerable attention has been directed toward exploring alternatives. One such material, zincblende-derived Cu2ZnSnS4 (CZTS), has shown promise due to its ideal band-gap size and high absorption coefficient. However, challenges such as structural defects and secondary phase formation have hindered its development. In this study, we examine the potential of another compound Cu2ZnSnO4 (CZTO) with a similar composition to CZTS as a promising alternative. Employing ab initio density function theory (DFT) calculations in combination with an evolutionary structure prediction algorithm, we identify that the crystalline phase of the delafossite structure is the most stable among the 900 (meta)stable CZTO. Its thermodynamic stability at room temperature is also confirmed by the molecular dynamics study. Excitingly, this new phase of CZTO displays a direct band gap where the dipole-allowed transition occurs, making it a strong candidate for efficient light absorption. Furthermore, the estimation of spectroscopic limited maximum efficiency (SLME) directly demonstrates the high potential of delafossite-CZTO as a photovoltaic absorber. Our numerical results suggest that delafossite-CZTO holds another promise for future photovoltaic applications.
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Submitted 17 October, 2023;
originally announced October 2023.
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Frequency-tunable nano-oscillator based on Ovonic Threshold Switch (OTS)
Authors:
Seon Jeong Kim,
Seong Won Cho,
Hyejin Lee,
Jaesang Lee,
Tae Yeon Seong,
Inho Kim,
Jong-Keuk Park,
Joon Young Kwak,
Jaewook Kim,
Jongkil Park,
YeonJoo Jeong,
Gyu Weon Hwang,
Kyeong Seok Lee,
Suyoun Lee
Abstract:
Nano-oscillator devices are gaining more and more attention as a prerequisite for developing novel energy-efficient computing systems based on coupled oscillators. Here, we introduce a highly scalable, frequency-tunable nano-oscillator consisting of one Ovonic threshold switch (OTS) and a field-effect transistor (FET). It is presented that the proposed device shows an oscillating behavior with a n…
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Nano-oscillator devices are gaining more and more attention as a prerequisite for developing novel energy-efficient computing systems based on coupled oscillators. Here, we introduce a highly scalable, frequency-tunable nano-oscillator consisting of one Ovonic threshold switch (OTS) and a field-effect transistor (FET). It is presented that the proposed device shows an oscillating behavior with a natural frequency (f_{nat}) adjustable from 0.5 to 2 MHz depending on the gate voltage applied to the FET. In addition, under a small periodic input, it is observed that the oscillating frequency (f_{osc}) of the device is locked to the frequency (f_{in}) of the input when f_{in} ~ f_{nat}, demonstrating the so-called synchronization phenomenon. It also shows the phase lock of the combined oscillator network using circuit simulation, where the phase relation between the oscillators can be controlled by the coupling strength. These results imply that the proposed device is promising for applications in oscillator-based computing systems.
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Submitted 28 September, 2020;
originally announced September 2020.
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Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors
Authors:
Maomao Liu,
Sichen Wei,
Simran Shahi,
Hemendra Nath Jaiswal,
Paolo Paletti,
Sara Fathipour,
Maja Remskar,
Jun Jiao,
Wansik Hwang,
Fei Yao,
Huamin Li
Abstract:
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly dis…
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High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a "generalized" Cu doping by using randomly distributed Cu atoms along the channel and (ii) a "localized" Cu doping by adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1 - 3 orders of magnitude, and consequently elevate electron mobilities by 5 - 7 times higher. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.
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Submitted 14 January, 2020;
originally announced January 2020.
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Symmetry dictated grain boundary state in a two-dimensional topological insulator
Authors:
Hyo Won Kim,
Seoung-Hun Kang,
Hyun-Jung Kim,
Kisung Chae,
Suyeon Cho,
Wonhee Ko,
Se Hwang Kang,
Heejun Yang,
Sung Wng Kim,
Seongjun Park,
Sung Woo Hwang,
Young-Kyun Kwon,
Young-Woo Son
Abstract:
Structural imperfections such as grain boundaries (GBs) and dislocations are ubiquitous in solids and have been of central importance in understanding nature of polycrystals. In addition to their classical roles, advent of topological insulators (TIs) offers a chance to realize distinct topological states bound to them. Although dislocation inside three-dimensional TIs is one of the prime candidat…
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Structural imperfections such as grain boundaries (GBs) and dislocations are ubiquitous in solids and have been of central importance in understanding nature of polycrystals. In addition to their classical roles, advent of topological insulators (TIs) offers a chance to realize distinct topological states bound to them. Although dislocation inside three-dimensional TIs is one of the prime candidates to look for, its direct detection and characterization are challenging. Instead, in two-dimensional (2D) TIs, their creations and measurements are easier and, moreover, topological states at the GBs or dislocations intimately connect to their lattice symmetry. However, such roles of crystalline symmetries of GBs in 2D TIs have not been clearly measured yet. Here, we present the first direct evidence of a symmetry enforced Dirac type metallic state along a GB in 1T'-MoTe$_2$, a prototypical 2D TI. Using scanning tunneling microscope, we show a metallic state along a grain boundary with non-symmorphic lattice symmetry and its absence along the other boundary with symmorphic one. Our large scale atomistic simulations demonstrate hourglass like nodal-line semimetallic in-gap states for the former while the gap-opening for the latter, explaining our observation very well. The protected metallic state tightly linked to its crystal symmetry demonstrated here can be used to create stable metallic nanowire inside an insulator.
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Submitted 5 July, 2019; v1 submitted 4 July, 2019;
originally announced July 2019.
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Energetic costs, precision, and efficiency of a biological motor in cargo transport
Authors:
Wonseok Hwang,
Changbong Hyeon
Abstract:
Molecular motors play pivotal roles in organizing the interior of cells. A motor efficient in cargo transport would move along cytoskeletal filaments with a high speed and a minimal error in transport distance (or time) while consuming a minimal amount of energy. The travel distance of the motor and its variance are, however, physically constrained by the free energy being consumed. A recently for…
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Molecular motors play pivotal roles in organizing the interior of cells. A motor efficient in cargo transport would move along cytoskeletal filaments with a high speed and a minimal error in transport distance (or time) while consuming a minimal amount of energy. The travel distance of the motor and its variance are, however, physically constrained by the free energy being consumed. A recently formulated \emph{thermodynamic uncertainty relation} offers a theoretical framework for the energy-accuracy trade-off relation ubiquitous in biological processes. According to the relation, a measure $\mathcal{Q}$, the product between the heat dissipated from a motor and the squared relative error in the displacement, has a minimal theoretical bound ($\mathcal{Q} \geq 2 k_B T$), which is approached when the time trajectory of the motor is maximally regular for a given amount of free energy input. Here, we use $\mathcal{Q}$ to quantify the transport efficiency of biological motors. Analyses on the motility data from several types of molecular motors reveal that $\mathcal{Q}$ is a complex function of ATP concentration and load ($f$). For kinesin-1, $\mathcal{Q}$ approaches the theoretical bound at $f\approx 4$ pN and over a broad range of ATP concentration (1 $μ$M - 10 mM), and is locally minimized at [ATP] $\approx$ 200 $μ$M. In stark contrast, this local minimum vanishes for a mutant that has a longer neck-linker, and the value of $\mathcal{Q}$ is significantly greater, which underscores the importance of molecular structure. Transport efficiencies of the biological motors studied here are semi-optimized under the cellular condition ([ATP] $\approx 1$ mM, $f=0-1$ pN). Our study indicates that among many possible directions of optimization, cytoskeletal motors are designed to operate at a high speed with a minimal error while leveraging their energy resources.
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Submitted 5 June, 2019; v1 submitted 10 October, 2017;
originally announced October 2017.
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Physical insight into the thermodynamic uncertainty relation using Brownian motion in tilted periodic potentials
Authors:
Changbong Hyeon,
Wonseok Hwang
Abstract:
Using Brownian motion in periodic potentials $V(x)$ tilted by a force $f$, we provide physical insight into the thermodynamic uncertainty relation, a recently conjectured principle for statistical errors and irreversible heat dissipation in nonequilibrium steady states. According to the relation, nonequilibrium output generated from dissipative processes necessarily incurs an energetic cost or hea…
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Using Brownian motion in periodic potentials $V(x)$ tilted by a force $f$, we provide physical insight into the thermodynamic uncertainty relation, a recently conjectured principle for statistical errors and irreversible heat dissipation in nonequilibrium steady states. According to the relation, nonequilibrium output generated from dissipative processes necessarily incurs an energetic cost or heat dissipation $q$, and in order to limit the output fluctuation within a relative uncertainty $ε$, at least $2k_BT/ε^2$ of heat must be dissipated. Our model shows that this bound is attained not only at near-equilibrium ($f\ll V'(x)$) but also at far-from-equilibrium $(f\gg V'(x))$, more generally when the dissipated heat is normally distributed. Furthermore, the energetic cost is maximized near the critical force when the barrier separating the potential wells is about to vanish and the fluctuation of Brownian particle is maximized. These findings indicate that the deviation of heat distribution from Gaussianity gives rise to the inequality of the uncertainty relation, further clarifying the meaning of the uncertainty relation. Our derivation of the uncertainty relation also recognizes a new bound of nonequilibrium fluctuations that the variance of dissipated heat ($σ_q^2$) increases with its mean ($μ_q$) and cannot be smaller than $2k_BTμ_q$.
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Submitted 19 July, 2017; v1 submitted 11 May, 2017;
originally announced May 2017.
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MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Authors:
Suresh Vishwanath,
Aditya Sundar,
Xinyu Liu,
Angelica Azcatl,
Edward Lochocki,
Arthur R. Woll,
Sergei Rouvimov,
Wan Sik Hwang,
Ning Lu,
Xin Peng,
Huai-Hsun Lien,
John Weisenberger,
Stephen McDonnell,
Moon J. Kim,
Margaret Dobrowolska,
Jacek K Furdyna,
Kyle Shen,
Robert M. Wallace,
Debdeep Jena,
Huili Grace Xing
Abstract:
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu…
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MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively.
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Submitted 1 May, 2017;
originally announced May 2017.
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Quantifying the Heat Dissipation from a Molecular Motor's Transport Properties in Nonequilibrium Steady States
Authors:
Wonseok Hwang,
Changbong Hyeon
Abstract:
Theoretical analysis, which maps single molecule time trajectories of a molecular motor onto unicyclic Markov processes, allows us to evaluate the heat dissipated from the motor and to elucidate its dependence on the mean velocity and diffusivity. Unlike passive Brownian particles in equilibrium, the velocity and diffusion constant of molecular motors are closely inter-related to each other. In pa…
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Theoretical analysis, which maps single molecule time trajectories of a molecular motor onto unicyclic Markov processes, allows us to evaluate the heat dissipated from the motor and to elucidate its dependence on the mean velocity and diffusivity. Unlike passive Brownian particles in equilibrium, the velocity and diffusion constant of molecular motors are closely inter-related to each other. In particular, our study makes it clear that the increase of diffusivity with the heat production is a natural outcome of active particles, which is reminiscent of the recent experimental premise that the diffusion of an exothermic enzyme is enhanced by the heat released from its own catalytic turnover. Compared with freely diffusing exothermic enzymes, kinesin-1 whose dynamics is confined on one-dimensional tracks is highly efficient in transforming conformational fluctuations into a locally directed motion, thus displaying a significantly higher enhancement in diffusivity with its turnover rate. Putting molecular motors and freely diffusing enzymes on an equal footing, our study offers thermodynamic basis to understand the heat enhanced self-diffusion of exothermic enzymes.
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Submitted 28 December, 2016; v1 submitted 17 December, 2016;
originally announced December 2016.
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Decoding Single Molecule Time Traces with Dynamic Disorder
Authors:
Wonseok Hwang,
Il-Buem Lee,
Seok-Cheol Hong,
Changbong Hyeon
Abstract:
Single molecule time trajectories of biomolecules provide glimpses into complex folding landscapes that are difficult to visualize using conventional ensemble measurements. Recent experiments and theoretical analyses have highlighted dynamic disorder in certain classes of biomolecules, whose dynamic pattern of conformational transitions is affected by slower transition dynamics of internal state h…
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Single molecule time trajectories of biomolecules provide glimpses into complex folding landscapes that are difficult to visualize using conventional ensemble measurements. Recent experiments and theoretical analyses have highlighted dynamic disorder in certain classes of biomolecules, whose dynamic pattern of conformational transitions is affected by slower transition dynamics of internal state hidden in a low dimensional projection. A systematic means to analyze such data is, however, currently not well developed. Here we report a new algorithm - Variational Bayes-double chain Markov model (VB-DCMM) - to analyze single molecule time trajectories that display dynamic disorder. The proposed analysis employing VB-DCMM allows us to detect the presence of dynamic disorder, if any, in each trajectory, identify the number of internal states, and estimate transition rates between the internal states as well as the rates of conformational transition within each internal state. Applying VB-DCMM algorithm to single molecule FRET data of H-DNA in 100 mM-Na$^+$ solution, followed by data clustering, we show that at least 6 kinetic paths linking 4 distinct internal states are required to correctly interpret the duplex-triplex transitions of H-DNA.
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Submitted 14 December, 2016;
originally announced December 2016.
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Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs
Authors:
Amit Verma,
Kazuki Nomoto,
Wan Sik Hwang,
Santosh Raghavan,
Susanne Stemmer,
Debdeep Jena
Abstract:
Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures.…
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Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 1014 cm-2.
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Submitted 5 May, 2016;
originally announced May 2016.
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Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
Authors:
Sara Fathipour,
Maja Remskar,
Ana Varlec,
Arvind Ajoy,
Rusen Yan,
Suresh Vishwanath,
Wan Sik Hwang,
Huili,
Xing,
Debdeep Jena,
Alan Seabaugh
Abstract:
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of t…
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We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements allowing estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10^3, and with current densities of 1.02 μA/μm, and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET, revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.
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Submitted 21 November, 2014;
originally announced November 2014.
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High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Authors:
Wan Sik Hwang,
Amit Verma,
Hartwin Peelaers,
Vladimir Protasenko,
Sergei Rouvimov,
Huili,
Xing,
Alan Seabaugh,
Wilfried Haensch,
Chris Van de Walle,
Zbigniew Galazka,
Martin Albrecht,
Roberto Forrnari,
Debdeep Jena
Abstract:
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enab…
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Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.
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Submitted 25 October, 2013;
originally announced October 2013.
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Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Authors:
Wan Sik Hwang,
Pei Zhao,
Kristof Tahy,
Luke O. Nyakiti,
Virginia D. Wheeler,
Rachael. L. Myers-Ward,
Charles R. Eddy Jr.,
D. Kurt Gaskill,
Joshua A. Robinson,
Wilfried Haensch,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNR…
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We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.
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Submitted 25 October, 2013;
originally announced October 2013.
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Evidence for Dimer Crystal Melting in the Frustrated Spin-Ladder BiCu2PO6
Authors:
K. -Y. Choi,
J. W. Hwang,
P. Lemmens,
D. Wulferding,
G. J. Shu,
F. C. Chou
Abstract:
In the spin ladder compound BiCu$_2$PO$_6$ there exists a decisive dynamics of spin excitations that we classify and characterize using inelastic light scattering. We observe low-energy singlets and a broad triplon continuum extending from 36 cm$^{-1}$ to 700 cm$^{-1}$ in ($aa$), ($bb$), and ($cc$) light scattering polarizations. Though isolated spin ladder physics can roughly account for the obse…
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In the spin ladder compound BiCu$_2$PO$_6$ there exists a decisive dynamics of spin excitations that we classify and characterize using inelastic light scattering. We observe low-energy singlets and a broad triplon continuum extending from 36 cm$^{-1}$ to 700 cm$^{-1}$ in ($aa$), ($bb$), and ($cc$) light scattering polarizations. Though isolated spin ladder physics can roughly account for the observed excitations at high energies, frustration and interladder interactions need to be considered to fully describe the spectral distribution and scattering selection rules at low and intermediate energies. More significantly, an interladder singlet bound mode at 24 cm$^{-1}$, lying below the continuum, shows its largest scattering intensity in interladder ($ab$) polarization. In contrast, two intraladder bound states at 62 cm$^{-1}$ and 108 cm$^{-1}$ with energies comparable to the continuum are observed with light polarization along the leg ($bb$) and the rung ($cc$). We attribute the rich spectrum of singlet bound modes to a melting of a dimer crystal. Our study provides evidence for a Z$_2$ quantum phase transition from a dimer to a resonating valence bond state driven by singlet fluctuations.
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Submitted 28 January, 2013;
originally announced January 2013.
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Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
Authors:
Wan Sik Hwang,
Maja Remskar,
Rusen Yan,
Tom Kosel,
Jong Kyung Park,
Byung Jin Cho,
Wilfried Haensch,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly du…
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We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
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Submitted 18 January, 2013;
originally announced January 2013.
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Multi-slot optical Yagi-Uda antenna for efficient unidirectional radiation to free space
Authors:
Jineun Kim,
Young-Geun Roh,
Sangmo Cheon,
Jong-Ho Choe,
Jongcheon Lee,
Jaesoong Lee,
Un Jeong Kim,
Yeonsang Park,
In Yong Song,
Q-Han Park,
Sung Woo Hwang,
Kinam Kim,
Chang-Won Lee
Abstract:
Plasmonic nanoantennas are key elements in nanophotonics capable of directing radiation or enhancing the transition rate of a quantum emitter. Slot-type magnetic-dipole nanoantennas, which are complementary structures of typical electric-dipole-type antennas, have received little attention, leaving their antenna properties largely unexplored. Here we present a novel magnetic-dipole-fed multi-slot…
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Plasmonic nanoantennas are key elements in nanophotonics capable of directing radiation or enhancing the transition rate of a quantum emitter. Slot-type magnetic-dipole nanoantennas, which are complementary structures of typical electric-dipole-type antennas, have received little attention, leaving their antenna properties largely unexplored. Here we present a novel magnetic-dipole-fed multi-slot optical Yagi-Uda antenna. By engineering the relative phase of the interacting surface plasmon polaritons between the slot elements, we demonstrate that the optical antenna exhibits highly unidirectional radiation to free space. The unique features of the slot-based magnetic nanoantenna provide a new possibility of achieving integrated features such as energy transfer from one waveguide to another by working as a future optical via.
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Submitted 16 August, 2013; v1 submitted 6 January, 2013;
originally announced January 2013.
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Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Authors:
Wan Sik Hwang,
Kristof Tahy,
Xuesong Li,
Huili,
Xing,
Alan C. Seabaugh,
Chun-Yung Sung,
Debdeep Jena
Abstract:
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening…
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Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.
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Submitted 2 April, 2012;
originally announced April 2012.
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Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Authors:
Wan Sik Hwang,
Maja Remskar,
Rusen Yan,
Vladimir Protasenko,
Kristof Tahy,
Soo Doo Chae,
Pei Zhao,
Aniruddha Konar,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs sho…
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We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.
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Submitted 2 April, 2012;
originally announced April 2012.
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A Coherent View on Entropy
Authors:
Won-Young Hwang
Abstract:
Informational entropy is often identified as physical entropy. This is surprising because the two quantities are differently defined and furthermore the former is a subjective quantity while the latter is an objective one. We describe the problems and then present a possible view that reconciles the two entropies. Informational entropy of a system is interpreted as physical entropy of a whole comp…
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Informational entropy is often identified as physical entropy. This is surprising because the two quantities are differently defined and furthermore the former is a subjective quantity while the latter is an objective one. We describe the problems and then present a possible view that reconciles the two entropies. Informational entropy of a system is interpreted as physical entropy of a whole composed of both the system and "memories" containing information about the system.
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Submitted 30 April, 2014; v1 submitted 17 June, 2008;
originally announced June 2008.
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Green's function approach to transport through a gate-all-around Si nanowire under impurity scattering
Authors:
J. H. OH,
D. Ahn,
Y. S. Yu,
S. W. Hwang
Abstract:
We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ionized impurity scattering on electron densities and currents. For nano-scale Si wires, it is found that, due to the impurity scattering, the loc…
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We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ionized impurity scattering on electron densities and currents. For nano-scale Si wires, it is found that, due to the impurity scattering, the local density of state profiles loose it's interference oscillations as well as is broaden and shifted. In addition, the impurity scattering gives rise to a different transconductance as functions of temperature and impurity scattering strength when compared with the transconductance without impurity scattering.
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Submitted 20 June, 2007;
originally announced June 2007.
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Current and noise expressions for radio-frequency single-electron transistors
Authors:
Jung Hyun Oh,
D. Ahn,
S. W. Hwang
Abstract:
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations under the two-charged state approximation using the Schwinger-Kedysh approach combined with the generating functional technique. For a given genera…
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We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations under the two-charged state approximation using the Schwinger-Kedysh approach combined with the generating functional technique. For a given generating functional, we derive exact expressions for tunneling currents and noises and present the forms in terms of transport coefficients. It is also shown that in the adiabatic limit our results encompass previous formulas. In order to reveal effects missing in static cases, we apply the derived results to simulate realized radio-frequency single-electron transistor. It is found that photon-assisted tunneling affects largely the performance of the single-electron transistor by enhancing both responses to gate charges and current noises. On various tunneling resistances and frequencies of microwaves, the dependence of the charge sensitivity is also discussed.
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Submitted 3 March, 2005;
originally announced March 2005.
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Time-dependent Currents of a Single-electron Transistor in Dissipative Environments
Authors:
Jung Hyun Oh,
D. Ahn,
S. W. Hwang
Abstract:
Currents of the single-electron transistors driven by time-dependent fields via external dissipative circuits are investigated theoretically. By expressing the external circuit in terms of driven harmonic oscillators and using the reduced-density operator method, we derive time- and environment-dependent tunneling rates in the regime of sequential tunneling and present expressions for both displ…
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Currents of the single-electron transistors driven by time-dependent fields via external dissipative circuits are investigated theoretically. By expressing the external circuit in terms of driven harmonic oscillators and using the reduced-density operator method, we derive time- and environment-dependent tunneling rates in the regime of sequential tunneling and present expressions for both displacement and tunneling currents with these tunneling rates. It is found that the dissipative environments affect tunneling currents in two ways; the determination of driving voltages at tunneling junctions and the depletion of particle-hole distribution functions. Considering a simple dissipative circuit, we discuss the effects of the environment on tunneling currents in both static and time-dependent cases.
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Submitted 30 September, 2003;
originally announced September 2003.
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Dissolution in a field
Authors:
W. Hwang,
S. Redner
Abstract:
We study the dissolution of a solid by continuous injection of reactive ``acid'' particles at a single point, with the reactive particles undergoing biased diffusion in the dissolved region. When acid encounters the substrate material, both an acid particle and a unit of the material disappear. We find that the lengths of the dissolved cavity parallel and perpendicular to the bias grow as t^{2/(…
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We study the dissolution of a solid by continuous injection of reactive ``acid'' particles at a single point, with the reactive particles undergoing biased diffusion in the dissolved region. When acid encounters the substrate material, both an acid particle and a unit of the material disappear. We find that the lengths of the dissolved cavity parallel and perpendicular to the bias grow as t^{2/(d+1)} and t^{1/(d+1)}, respectively, in d-dimensions, while the number of reactive particles within the cavity grows as t^{2/(d+1)}. We also obtain the exact density profile of the reactive particles and the relation between this profile and the motion of the dissolution boundary. The extension to variable acid strength is also discussed.
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Submitted 31 May, 2001;
originally announced May 2001.
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Infiltration through porous media
Authors:
W. Hwang,
S. Redner
Abstract:
We study the kinetics of infiltration in which contaminant particles, which are suspended in a flowing carrier fluid, penetrate a porous medium. The progress of the ``invader'' particles is impeded by their trapping on active ``defender'' sites which are on the surfaces of the medium. As the defenders are used up, the invader penetrates further and ultimately breaks through. We study this proces…
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We study the kinetics of infiltration in which contaminant particles, which are suspended in a flowing carrier fluid, penetrate a porous medium. The progress of the ``invader'' particles is impeded by their trapping on active ``defender'' sites which are on the surfaces of the medium. As the defenders are used up, the invader penetrates further and ultimately breaks through. We study this process in the regime where the particles are much smaller than the pores so that the permeability change due to trapping is negligible. We develop a family of microscopic models of increasing realism to determine the propagation velocity of the invasion front, as well as the shapes of the invader and defender profiles. The predictions of our model agree qualitatively with experimental results on breakthrough times and the time dependence of the invader concentration at the output. Our results also provide practical guidelines for improving the design of deep bed filters in which infiltration is the primary separation mechanism.
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Submitted 6 September, 2000;
originally announced September 2000.
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Fitness versus Longevity in Age-Structured Population Dynamics
Authors:
W. Hwang,
P. L. Krapivsky,
S. Redner
Abstract:
We examine the dynamics of an age-structured population model in which the life expectancy of an offspring may be mutated with respect to that of the parent. While the total population of the system always reaches a steady state, the fitness and age characteristics exhibit counter-intuitive behavior as a function of the mutational bias. By analytical and numerical study of the underlying rate eq…
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We examine the dynamics of an age-structured population model in which the life expectancy of an offspring may be mutated with respect to that of the parent. While the total population of the system always reaches a steady state, the fitness and age characteristics exhibit counter-intuitive behavior as a function of the mutational bias. By analytical and numerical study of the underlying rate equations, we show that if deleterious mutations are favored, the average fitness of the population reaches a steady state, while the average population age is a decreasing function of the overall fitness. When advantageous mutations are favored, the average population fitness grows linearly with time t, while the average age is independent of fitness. For no mutational bias, the average fitness grows as t^{2/3}.
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Submitted 16 December, 1999;
originally announced December 1999.
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Does Good Mutation Help You Live Longer?
Authors:
W. Hwang,
P. L. Krapivsky,
S. Redner
Abstract:
We study the dynamics of an age-structured population in which the life expectancy of an offspring may be mutated with respect to that of its parent. When advantageous mutation is favored, the average fitness of the population grows linearly with time $t$, while in the opposite case the average fitness is constant. For no mutational bias, the average fitness grows as t^{2/3}. The average age of…
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We study the dynamics of an age-structured population in which the life expectancy of an offspring may be mutated with respect to that of its parent. When advantageous mutation is favored, the average fitness of the population grows linearly with time $t$, while in the opposite case the average fitness is constant. For no mutational bias, the average fitness grows as t^{2/3}. The average age of the population remains finite in all cases and paradoxically is a decreasing function of the overall population fitness.
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Submitted 16 July, 1999; v1 submitted 25 January, 1999;
originally announced January 1999.
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Dynamic behavior of driven interfaces in models with two absorbing states
Authors:
Sungchul Kwon,
WonMuk Hwang,
Hyunggyu Park
Abstract:
We study the dynamics of an interface (active domain) between different absorbing regions in models with two absorbing states in one dimension; probabilistic cellular automata models and interacting monomer-dimer models. These models exhibit a continuous transition from an active phase into an absorbing phase, which belongs to the directed Ising (DI) universality class. In the active phase, the…
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We study the dynamics of an interface (active domain) between different absorbing regions in models with two absorbing states in one dimension; probabilistic cellular automata models and interacting monomer-dimer models. These models exhibit a continuous transition from an active phase into an absorbing phase, which belongs to the directed Ising (DI) universality class. In the active phase, the interface spreads ballistically into the absorbing regions and the interface width diverges linearly in time. Approaching the critical point, the spreading velocity of the interface vanishes algebraically with a DI critical exponent. Introducing a symmetry-breaking field $h$ that prefers one absorbing state over the other drives the interface to move asymmetrically toward the unpreferred absorbing region. In Monte Carlo simulations, we find that the spreading velocity of this driven interface shows a discontinuous jump at criticality. We explain that this unusual behavior is due to a finite relaxation time in the absorbing phase. The crossover behavior from the symmetric case (DI class) to the asymmetric case (directed percolation class) is also studied. We find the scaling dimension of the symmetry-breaking field $y_h = 1.21(5)$.
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Submitted 3 November, 1998;
originally announced November 1998.
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Interacting Monomer-Dimer Model with Infinitely Many Absorbing States
Authors:
WonMuk Hwang,
Hyunggyu Park
Abstract:
We study a modified version of the interacting monomer-dimer (IMD) model that has infinitely many absorbing (IMA) states. Unlike all other previously studied models with IMA states, the absorbing states can be divided into two equivalent groups which are dynamically separated infinitely far apart. Monte Carlo simulations show that this model belongs to the directed Ising universality class like…
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We study a modified version of the interacting monomer-dimer (IMD) model that has infinitely many absorbing (IMA) states. Unlike all other previously studied models with IMA states, the absorbing states can be divided into two equivalent groups which are dynamically separated infinitely far apart. Monte Carlo simulations show that this model belongs to the directed Ising universality class like the ordinary IMD model with two equivalent absorbing states. This model is the first model with IMA states which does not belong to the directed percolation (DP) universality class. The DP universality class can be restored in two ways, i.e., by connecting the two equivalent groups dynamically or by introducing a symmetry-breaking field between the two groups.
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Submitted 3 September, 1998;
originally announced September 1998.
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Critical phenomena of nonequilibrium dynamical systems with two absorbing states
Authors:
WonMuk Hwang,
Sungchul Kwon,
Heungwon Park,
Hyunggyu Park
Abstract:
We study nonequilibrium dynamical models with two absorbing states: interacting monomer-dimer models, probabilistic cellular automata models, nonequilibrium kinetic Ising models. These models exhibit a continuous phase transition from an active phase into an absorbing phase which belongs to the universality class of the models with the parity conservation. However, when we break the symmetry bet…
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We study nonequilibrium dynamical models with two absorbing states: interacting monomer-dimer models, probabilistic cellular automata models, nonequilibrium kinetic Ising models. These models exhibit a continuous phase transition from an active phase into an absorbing phase which belongs to the universality class of the models with the parity conservation. However, when we break the symmetry between the absorbing states by introducing a symmetry-breaking field, Monte Carlo simulations show that the system goes back to the conventional directed percolation universality class. In terms of domain wall language, the parity conservation is not affected by the presence of the symmetry-breaking field. So the symmetry between the absorbing states rather than the conservation laws plays an essential role in determining the universality class. We also perform Monte Carlo simulations for the various interface dynamics between different absorbing states, which yield new universal dynamic exponents. With the symmetry-breaking field, the interface moves, in average, with a constant velocity in the direction of the unpreferred absorbing state and the dynamic scaling exponents apparently assume trivial values. However, we find that the hyperscaling relation for the directed percolation universality class is restored if one focuses on the dynamics of the interface on the side of the preferred absorbing state only.
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Submitted 21 December, 1997;
originally announced December 1997.
